JPS6415936A - Production device for semiconductor device - Google Patents

Production device for semiconductor device

Info

Publication number
JPS6415936A
JPS6415936A JP17217987A JP17217987A JPS6415936A JP S6415936 A JPS6415936 A JP S6415936A JP 17217987 A JP17217987 A JP 17217987A JP 17217987 A JP17217987 A JP 17217987A JP S6415936 A JPS6415936 A JP S6415936A
Authority
JP
Japan
Prior art keywords
treating
dehydrating
solution
semiconductor
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17217987A
Other languages
Japanese (ja)
Inventor
Makoto Tominaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17217987A priority Critical patent/JPS6415936A/en
Publication of JPS6415936A publication Critical patent/JPS6415936A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent scattering onto the surface of a semiconductor wafer of the droplet of a dehydrating treating solution by installing a filter section between the dehydrating treating solution and a semiconductor wafer treating section. CONSTITUTION:In an example in which a dehydrating treating solution 4 and a semiconductor wafer are made to coexist in the same sealed vessel, the dehydrating treating solution 4 such as alcohol solution of hexamethyldisilaxane, etc., is bubbled with nitrogen gas (hereinafter called N2) in a solution tank 5, thus promoting the vaporization of the dehydrating treating solution 4. Several dozen semiconductor wafers 1 are positioned into a sealed vessel 3 by a fixture 2. The vaporized particles of the dehydrating treating liquid 4 generated by the bubbling of N2 pass through a filter section 6 consisting of three plates 6, spaces of which are formed alternately, and reach a semiconductor-wafer treating section. On the other hand, droplets generated by the explosion of bubbles on the surface of the dehydrating treating liquid 4 are trapped by the filter section 6, and do not reach the semiconductor-wafer 1 treating section. A mesh, etc., may be used as the shape of the filter section 6 at that time.
JP17217987A 1987-07-10 1987-07-10 Production device for semiconductor device Pending JPS6415936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17217987A JPS6415936A (en) 1987-07-10 1987-07-10 Production device for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17217987A JPS6415936A (en) 1987-07-10 1987-07-10 Production device for semiconductor device

Publications (1)

Publication Number Publication Date
JPS6415936A true JPS6415936A (en) 1989-01-19

Family

ID=15937041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17217987A Pending JPS6415936A (en) 1987-07-10 1987-07-10 Production device for semiconductor device

Country Status (1)

Country Link
JP (1) JPS6415936A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system

Similar Documents

Publication Publication Date Title
EP0396002A3 (en) Surface treating apparatus and method using vapor
ATE54341T1 (en) MICROWAVE APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR PARTS AND SEMICONDUCTOR PARTS BY THIS METHOD.
CN1095187A (en) The wet-chemical treatment method of workpiece
ES8501100A1 (en) Process and device for the production of high purity gas by the vaporisation of a cryogenic liquid.
ATE64692T1 (en) COMPOSITION FOR REMOVAL BY CHEMICAL SORPTION OF HOMOGENEOUS DISSOLVED ADDITIVES, ESPECIALLY OXYGEN, FROM GASES OR LIQUIDS.
JPS5271386A (en) Method of removing membrane contaminants
JPS6415936A (en) Production device for semiconductor device
MX9801464A (en) Procedure for drying silicon.
KR900000985A (en) Manufacturing Method of Semiconductor Device
JPS51111207A (en) Process for obtaining fuel oil from viscous sulfuric acid sludge forme d in the sulfuric acid washing procedure at the petroleum refinery
JPS5454578A (en) Gas plasma etching method
JPS647622A (en) Device for treatment of semiconductor substrate
JPS6437028A (en) Manufacture of semiconductor element
JPS52151555A (en) Manufacture of luminous screen
FR2643114B1 (en)
JPS5561927A (en) Method and apparatus for mixing gas
JPS5522320A (en) Gas cleaning process
SU1654304A1 (en) Reactor for treating solids with liquid
JPS5575223A (en) Manufacturing semiconductor device
JPS5311168A (en) Treating apparatus for liquid
JPS5326384A (en) Defoaming of aerobic cultivation tank
ES2098588T3 (en) MICROCAPSULES MANUFACTURING PROCEDURE.
JPS5321415A (en) Transporting or storing tank for powder-liquid mixture
JPS5375862A (en) Surface stabilization method of semiconductor
JPS5362476A (en) Processing method of semiconductor surface