JPS5660065A
(en)
*
|
1979-10-23 |
1981-05-23 |
Fujitsu Ltd |
Semiconductor device
|
JPS59224165A
(ja)
*
|
1983-06-03 |
1984-12-17 |
Agency Of Ind Science & Technol |
半導体装置
|
US4902641A
(en)
*
|
1987-07-31 |
1990-02-20 |
Motorola, Inc. |
Process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure
|
JPS6445166A
(en)
*
|
1987-08-14 |
1989-02-17 |
Toshiba Corp |
Manufacture of semiconductor device
|
JPH04246862A
(ja)
|
1991-02-01 |
1992-09-02 |
Mitsubishi Electric Corp |
半導体集積回路及び半導体集積回路製造方法
|
JP2603886B2
(ja)
*
|
1991-05-09 |
1997-04-23 |
日本電信電話株式会社 |
薄層soi型絶縁ゲート型電界効果トランジスタの製造方法
|
JPH05218326A
(ja)
*
|
1992-01-31 |
1993-08-27 |
Canon Inc |
半導体装置及び液晶表示装置
|
US5441899A
(en)
*
|
1992-02-18 |
1995-08-15 |
Mitsubishi Denki Kabushiki Kaisha |
Method of manufacturing substrate having semiconductor on insulator
|
JP3254007B2
(ja)
*
|
1992-06-09 |
2002-02-04 |
株式会社半導体エネルギー研究所 |
薄膜状半導体装置およびその作製方法
|
US5461250A
(en)
*
|
1992-08-10 |
1995-10-24 |
International Business Machines Corporation |
SiGe thin film or SOI MOSFET and method for making the same
|
US5283454A
(en)
*
|
1992-09-11 |
1994-02-01 |
Motorola, Inc. |
Semiconductor device including very low sheet resistivity buried layer
|
JP3321899B2
(ja)
*
|
1992-12-04 |
2002-09-09 |
株式会社デンソー |
半導体装置
|
JPH06181312A
(ja)
*
|
1992-12-15 |
1994-06-28 |
Fujitsu Ltd |
半導体装置及びその製造方法
|
FR2700003B1
(fr)
*
|
1992-12-28 |
1995-02-10 |
Commissariat Energie Atomique |
Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu.
|
JPH06275826A
(ja)
*
|
1993-03-24 |
1994-09-30 |
Fujitsu Ltd |
半導体装置
|
US5413952A
(en)
*
|
1994-02-02 |
1995-05-09 |
Motorola, Inc. |
Direct wafer bonded structure method of making
|
US5497019A
(en)
*
|
1994-09-22 |
1996-03-05 |
The Aerospace Corporation |
Silicon-on-insulator gate-all-around MOSFET devices and fabrication methods
|
US5705405A
(en)
*
|
1994-09-30 |
1998-01-06 |
Sgs-Thomson Microelectronics, Inc. |
Method of making the film transistor with all-around gate electrode
|
JPH08222701A
(ja)
|
1995-02-17 |
1996-08-30 |
Asahi Chem Ind Co Ltd |
キャパシタを有する半導体装置およびその製造方法
|
US5736435A
(en)
*
|
1995-07-03 |
1998-04-07 |
Motorola, Inc. |
Process for fabricating a fully self-aligned soi mosfet
|
US5578841A
(en)
*
|
1995-12-18 |
1996-11-26 |
Motorola, Inc. |
Vertical MOSFET device having frontside and backside contacts
|
KR100205442B1
(ko)
*
|
1995-12-26 |
1999-07-01 |
구본준 |
박막트랜지스터 및 그의 제조방법
|
US5741737A
(en)
*
|
1996-06-27 |
1998-04-21 |
Cypress Semiconductor Corporation |
MOS transistor with ramped gate oxide thickness and method for making same
|
US5770881A
(en)
*
|
1996-09-12 |
1998-06-23 |
International Business Machines Coproration |
SOI FET design to reduce transient bipolar current
|
US6191007B1
(en)
*
|
1997-04-28 |
2001-02-20 |
Denso Corporation |
Method for manufacturing a semiconductor substrate
|
US5982004A
(en)
*
|
1997-06-20 |
1999-11-09 |
Hong Kong University Of Science & Technology |
Polysilicon devices and a method for fabrication thereof
|
US5943581A
(en)
*
|
1997-11-05 |
1999-08-24 |
Vanguard International Semiconductor Corporation |
Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits
|
US5880030A
(en)
*
|
1997-11-25 |
1999-03-09 |
Intel Corporation |
Unlanded via structure and method for making same
|
JPH11213698A
(ja)
*
|
1998-01-21 |
1999-08-06 |
Mitsubishi Electric Corp |
メモリセル評価用半導体装置及びその製造方法並びにメモリセル評価方法
|
US6004837A
(en)
*
|
1998-02-18 |
1999-12-21 |
International Business Machines Corporation |
Dual-gate SOI transistor
|
US6445032B1
(en)
*
|
1998-05-04 |
2002-09-03 |
International Business Machines Corporation |
Floating back gate electrically erasable programmable read-only memory(EEPROM)
|
KR100267013B1
(ko)
*
|
1998-05-27 |
2000-09-15 |
윤종용 |
반도체 장치 및 그의 제조 방법
|
US6346446B1
(en)
*
|
1998-06-01 |
2002-02-12 |
Massachusetts Institute Of Technology |
Methods of forming features of integrated circuits using modified buried layers
|
US6207530B1
(en)
*
|
1998-06-19 |
2001-03-27 |
International Business Machines Corporation |
Dual gate FET and process
|
US6215158B1
(en)
*
|
1998-09-10 |
2001-04-10 |
Lucent Technologies Inc. |
Device and method for forming semiconductor interconnections in an integrated circuit substrate
|
JP4332925B2
(ja)
*
|
1999-02-25 |
2009-09-16 |
ソニー株式会社 |
半導体装置およびその製造方法
|
US6069819A
(en)
*
|
1999-09-09 |
2000-05-30 |
International Business Machines Corp. |
Variable threshold voltage DRAM cell
|
JP3437132B2
(ja)
*
|
1999-09-14 |
2003-08-18 |
シャープ株式会社 |
半導体装置
|
WO2001065609A1
(en)
*
|
2000-02-29 |
2001-09-07 |
Koninklijke Philips Electronics N.V. |
Semiconductor device and method of manufacturing same
|
US6507063B2
(en)
*
|
2000-04-17 |
2003-01-14 |
International Business Machines Corporation |
Poly-poly/MOS capacitor having a gate encapsulating first electrode layer
|
US6391695B1
(en)
*
|
2000-08-07 |
2002-05-21 |
Advanced Micro Devices, Inc. |
Double-gate transistor formed in a thermal process
|
US6403981B1
(en)
*
|
2000-08-07 |
2002-06-11 |
Advanced Micro Devices, Inc. |
Double gate transistor having a silicon/germanium channel region
|
US6383904B1
(en)
*
|
2000-10-16 |
2002-05-07 |
Advanced Micro Devices, Inc. |
Fabrication of self-aligned front gate and back gate of a field effect transistor in semiconductor on insulator
|
US6583440B2
(en)
|
2000-11-30 |
2003-06-24 |
Seiko Epson Corporation |
Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
|
TW472387B
(en)
|
2001-02-06 |
2002-01-11 |
United Microelectronics Corp |
Manufacturing method of SRAM
|
US6686630B2
(en)
*
|
2001-02-07 |
2004-02-03 |
International Business Machines Corporation |
Damascene double-gate MOSFET structure and its fabrication method
|
JP3982218B2
(ja)
*
|
2001-02-07 |
2007-09-26 |
ソニー株式会社 |
半導体装置およびその製造方法
|
JP4216483B2
(ja)
*
|
2001-02-15 |
2009-01-28 |
株式会社東芝 |
半導体メモリ装置
|
JP3884266B2
(ja)
*
|
2001-02-19 |
2007-02-21 |
株式会社東芝 |
半導体メモリ装置及びその製造方法
|
US6548848B2
(en)
*
|
2001-03-15 |
2003-04-15 |
Kabushiki Kaisha Toshiba |
Semiconductor memory device
|
EP1244142A1
(en)
*
|
2001-03-23 |
2002-09-25 |
Universite Catholique De Louvain |
Fabrication method of SOI semiconductor devices
|
US6423599B1
(en)
*
|
2001-05-01 |
2002-07-23 |
Advanced Micro Devices, Inc. |
Method for fabricating a field effect transistor having dual gates in SOI (semiconductor on insulator) technology
|
JP3501793B2
(ja)
*
|
2001-05-16 |
2004-03-02 |
Nec液晶テクノロジー株式会社 |
薄膜トランジスタ及びその製造方法
|
US6596570B2
(en)
*
|
2001-06-06 |
2003-07-22 |
International Business Machines Corporation |
SOI device with reduced junction capacitance
|
US6759282B2
(en)
*
|
2001-06-12 |
2004-07-06 |
International Business Machines Corporation |
Method and structure for buried circuits and devices
|
TWI230392B
(en)
*
|
2001-06-18 |
2005-04-01 |
Innovative Silicon Sa |
Semiconductor device
|
EP1306898A1
(en)
*
|
2001-10-29 |
2003-05-02 |
Dialog Semiconductor GmbH |
Sub-milliohm on-chip interconnection
|
US6703872B2
(en)
*
|
2001-12-10 |
2004-03-09 |
Texas Instruments Incorporated |
High speed, high common mode range, low delay comparator input stage
|
US6828654B2
(en)
*
|
2001-12-27 |
2004-12-07 |
Broadcom Corporation |
Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
|
US6661042B2
(en)
*
|
2002-03-11 |
2003-12-09 |
Monolithic System Technology, Inc. |
One-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region
|
JP3764401B2
(ja)
|
2002-04-18 |
2006-04-05 |
株式会社東芝 |
半導体装置の製造方法
|
EP1357603A3
(en)
*
|
2002-04-18 |
2004-01-14 |
Innovative Silicon SA |
Semiconductor device
|
JP2003332582A
(ja)
*
|
2002-05-13 |
2003-11-21 |
Toshiba Corp |
半導体装置及びその製造方法
|
US7074623B2
(en)
*
|
2002-06-07 |
2006-07-11 |
Amberwave Systems Corporation |
Methods of forming strained-semiconductor-on-insulator finFET device structures
|
JP3621695B2
(ja)
*
|
2002-07-29 |
2005-02-16 |
株式会社東芝 |
半導体装置及び素子形成用基板
|
US6919238B2
(en)
*
|
2002-07-29 |
2005-07-19 |
Intel Corporation |
Silicon on insulator (SOI) transistor and methods of fabrication
|
KR100813833B1
(ko)
*
|
2002-08-23 |
2008-03-17 |
삼성에스디아이 주식회사 |
전자 발광 소자와 그 제조방법
|
US6888200B2
(en)
*
|
2002-08-30 |
2005-05-03 |
Micron Technology Inc. |
One transistor SOI non-volatile random access memory cell
|
US7042027B2
(en)
*
|
2002-08-30 |
2006-05-09 |
Micron Technology, Inc. |
Gated lateral thyristor-based random access memory cell (GLTRAM)
|
US6664598B1
(en)
*
|
2002-09-05 |
2003-12-16 |
International Business Machines Corporation |
Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
|
US6812527B2
(en)
*
|
2002-09-05 |
2004-11-02 |
International Business Machines Corporation |
Method to control device threshold of SOI MOSFET's
|
JP2004111826A
(ja)
*
|
2002-09-20 |
2004-04-08 |
Renesas Technology Corp |
半導体装置およびその製造方法
|
US7710771B2
(en)
*
|
2002-11-20 |
2010-05-04 |
The Regents Of The University Of California |
Method and apparatus for capacitorless double-gate storage
|
US6833569B2
(en)
*
|
2002-12-23 |
2004-12-21 |
International Business Machines Corporation |
Self-aligned planar double-gate process by amorphization
|
US6800518B2
(en)
*
|
2002-12-30 |
2004-10-05 |
International Business Machines Corporation |
Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineering
|
KR100451459B1
(ko)
|
2003-02-10 |
2004-10-07 |
삼성전자주식회사 |
더블 게이트 전극 형성 방법 및 더블 게이트 전극을포함하는 반도체 장치의 제조 방법
|
JP4257971B2
(ja)
*
|
2003-03-27 |
2009-04-30 |
独立行政法人産業技術総合研究所 |
二重ゲート電界効果トランジスタのゲート信号印加方法
|
JP4000087B2
(ja)
*
|
2003-05-07 |
2007-10-31 |
株式会社東芝 |
半導体装置およびその製造方法
|
EP1480266A3
(fr)
*
|
2003-05-20 |
2006-03-15 |
STMicroelectronics S.A. |
Procédé de réalisation d'un circuit électronique intégré comprenant des composants superposés et circuit électronique intégré ainsi obtenu
|
US7015547B2
(en)
*
|
2003-07-03 |
2006-03-21 |
American Semiconductor, Inc. |
Multi-configurable independently multi-gated MOSFET
|
US7018873B2
(en)
*
|
2003-08-13 |
2006-03-28 |
International Business Machines Corporation |
Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate
|
JP4554180B2
(ja)
*
|
2003-09-17 |
2010-09-29 |
ソニー株式会社 |
薄膜半導体デバイスの製造方法
|
JP2005158952A
(ja)
*
|
2003-11-25 |
2005-06-16 |
Toshiba Corp |
半導体装置及びその製造方法
|
US7375410B2
(en)
*
|
2004-02-25 |
2008-05-20 |
International Business Machines Corporation |
Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
|
KR100625177B1
(ko)
*
|
2004-05-25 |
2006-09-20 |
삼성전자주식회사 |
멀티-브리지 채널형 모오스 트랜지스터의 제조 방법
|
US20060022264A1
(en)
*
|
2004-07-30 |
2006-02-02 |
Leo Mathew |
Method of making a double gate semiconductor device with self-aligned gates and structure thereof
|
US7115965B2
(en)
*
|
2004-09-01 |
2006-10-03 |
International Business Machines Corporation |
Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation
|
JP4083160B2
(ja)
*
|
2004-10-04 |
2008-04-30 |
株式会社東芝 |
半導体記憶装置およびfbcメモリセルの駆動方法
|
KR100615096B1
(ko)
*
|
2004-11-15 |
2006-08-22 |
삼성전자주식회사 |
다중 채널을 갖는 모스 트랜지스터 제조방법
|
DE102005017072A1
(de)
*
|
2004-12-29 |
2006-07-13 |
Hynix Semiconductor Inc., Ichon |
Ladungsfalle- bzw. Ladung-Trap-Isolator-Speichereinrichtung
|
US7129138B1
(en)
*
|
2005-04-14 |
2006-10-31 |
International Business Machines Corporation |
Methods of implementing and enhanced silicon-on-insulator (SOI) box structures
|
US7335932B2
(en)
*
|
2005-04-14 |
2008-02-26 |
International Business Machines Corporation |
Planar dual-gate field effect transistors (FETs)
|
US7102181B1
(en)
*
|
2005-04-22 |
2006-09-05 |
International Business Machines Corporation |
Structure and method for dual-gate FET with SOI substrate
|
US7141727B1
(en)
*
|
2005-05-16 |
2006-11-28 |
International Business Machines Corporation |
Method and apparatus for fabricating a carbon nanotube transistor having unipolar characteristics
|
US7402850B2
(en)
*
|
2005-06-21 |
2008-07-22 |
Micron Technology, Inc. |
Back-side trapped non-volatile memory device
|
KR100711000B1
(ko)
*
|
2005-11-28 |
2007-04-24 |
동부일렉트로닉스 주식회사 |
이중 게이트를 구비한 모스트랜지스터 및 그 제조방법
|