JP2009270880A5 - - Google Patents
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- JP2009270880A5 JP2009270880A5 JP2008120306A JP2008120306A JP2009270880A5 JP 2009270880 A5 JP2009270880 A5 JP 2009270880A5 JP 2008120306 A JP2008120306 A JP 2008120306A JP 2008120306 A JP2008120306 A JP 2008120306A JP 2009270880 A5 JP2009270880 A5 JP 2009270880A5
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- 239000000758 substrate Substances 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 17
- 238000012360 testing method Methods 0.000 claims description 17
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 2
- 239000000523 sample Substances 0.000 description 31
- 239000004065 semiconductor Substances 0.000 description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000010948 rhodium Substances 0.000 description 8
- 239000007769 metal material Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 229910052703 rhodium Inorganic materials 0.000 description 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 6
- 238000005304 joining Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910000531 Co alloy Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000976 Electrical steel Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910018100 Ni-Sn Inorganic materials 0.000 description 1
- 229910018532 Ni—Sn Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008120306A JP2009270880A (ja) | 2008-05-02 | 2008-05-02 | 電子デバイスの電気的試験用接触子、その製造方法及びプローブ組立体 |
| US12/417,861 US8063651B2 (en) | 2008-05-02 | 2009-04-03 | Contact for electrical test of electronic devices, probe assembly and method for manufacturing the same |
| KR1020090034848A KR101034979B1 (ko) | 2008-05-02 | 2009-04-22 | 전자 디바이스의 전기적 시험용 접촉자, 프로브 조립체 및 그 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008120306A JP2009270880A (ja) | 2008-05-02 | 2008-05-02 | 電子デバイスの電気的試験用接触子、その製造方法及びプローブ組立体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009270880A JP2009270880A (ja) | 2009-11-19 |
| JP2009270880A5 true JP2009270880A5 (https=) | 2011-05-19 |
Family
ID=41256686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008120306A Pending JP2009270880A (ja) | 2008-05-02 | 2008-05-02 | 電子デバイスの電気的試験用接触子、その製造方法及びプローブ組立体 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8063651B2 (https=) |
| JP (1) | JP2009270880A (https=) |
| KR (1) | KR101034979B1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150008950A1 (en) * | 2011-12-31 | 2015-01-08 | Roy E. Swart | Manufacturing advanced test probes |
| JP5977583B2 (ja) * | 2012-05-29 | 2016-08-24 | 株式会社日本マイクロニクス | 接合パッド、プローブ組立体及び接合パッドの製造方法 |
| EP2877831A4 (en) * | 2012-06-29 | 2016-03-16 | Hydrovision Asia Pte Ltd | IMPROVED FABRIC MEASURING DEVICE |
| USD702646S1 (en) * | 2012-08-29 | 2014-04-15 | Kabushiki Kaisha Nihon Micronics | Electric contact |
| KR20140080750A (ko) * | 2012-12-14 | 2014-07-01 | 한국전자통신연구원 | 반도체 소자 테스트 장치 |
| JP6042761B2 (ja) * | 2013-03-28 | 2016-12-14 | 東京エレクトロン株式会社 | プローブ装置 |
| KR101724954B1 (ko) * | 2015-12-02 | 2017-04-07 | 한국기초과학지원연구원 | 마이크로 진공 프로브 시스템 |
| WO2018003507A1 (ja) * | 2016-06-28 | 2018-01-04 | 株式会社日本マイクロニクス | 電気的接続装置及び接触子 |
| DE102017209510A1 (de) * | 2017-06-06 | 2018-12-06 | Feinmetall Gmbh | Kontaktelementsystem |
| JP1646397S (https=) * | 2019-05-21 | 2019-11-25 | ||
| JP2021028603A (ja) * | 2019-08-09 | 2021-02-25 | 株式会社日本マイクロニクス | 電気的接触子及び電気的接続装置 |
| CN115436675B (zh) * | 2021-06-04 | 2026-03-17 | 芯卓科技(浙江)有限公司 | 测试装置及其探针组件 |
| KR20260010596A (ko) * | 2024-07-12 | 2026-01-21 | 주식회사 에이엠에스티 | 프로브 카드 조립체 및 그 제조 방법 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272434A (en) * | 1987-06-20 | 1993-12-21 | Schlumberger Technologies, Inc. | Method and apparatus for electro-optically testing circuits |
| JPH05109824A (ja) * | 1991-10-15 | 1993-04-30 | Omron Corp | 電子部品のフリツプチツプ実装方法 |
| JPH0685448A (ja) * | 1992-08-24 | 1994-03-25 | Hitachi Ltd | レーザはんだ付け方法及びその装置 |
| US5725989A (en) * | 1996-04-15 | 1998-03-10 | Chang; Jeffrey C. | Laser addressable thermal transfer imaging element with an interlayer |
| US6127832A (en) * | 1998-01-06 | 2000-10-03 | International Business Machines Corporation | Electrical test tool having easily replaceable electrical probe |
| JP2002009117A (ja) | 2000-06-19 | 2002-01-11 | Micronics Japan Co Ltd | プローブカード |
| JP2002031652A (ja) | 2000-07-17 | 2002-01-31 | Ando Electric Co Ltd | プローブカード、その修復方法及びその製造方法 |
| JP3761023B2 (ja) * | 2001-11-20 | 2006-03-29 | セイコーエプソン株式会社 | 圧電デバイス及びその製造方法 |
| US7679389B2 (en) * | 2005-03-07 | 2010-03-16 | Kabushiki Kaisha Nihon Micronics | Probe for electrical test and electrical connecting apparatus using it |
| JP4570997B2 (ja) * | 2005-03-24 | 2010-10-27 | 株式会社日本マイクロニクス | プローブ、基板へのプローブの取り付け方法及び装置、電気的接続装置、並びに電気的接続装置の製造方法 |
| US7629807B2 (en) * | 2005-08-09 | 2009-12-08 | Kabushiki Kaisha Nihon Micronics | Electrical test probe |
| JP4971636B2 (ja) | 2006-01-06 | 2012-07-11 | 川崎マイクロエレクトロニクス株式会社 | プローブカードの取り付け位置ずれの検出方法及びプローバ装置 |
| JP5060965B2 (ja) * | 2006-01-25 | 2012-10-31 | 株式会社日本マイクロニクス | 通電試験用プローブ、プローブ組立体およびその製造方法 |
| JP2007240235A (ja) * | 2006-03-07 | 2007-09-20 | Micronics Japan Co Ltd | 通電試験用プローブおよびプローブ組立体 |
| JP2008034569A (ja) * | 2006-07-28 | 2008-02-14 | Matsushita Electric Ind Co Ltd | 半導体集積回路検査用プローブカードとその製造方法 |
| TW200815763A (en) * | 2006-09-26 | 2008-04-01 | Nihon Micronics Kabushiki Kaisha | Electrical test probe and electrical test probe assembly |
| JP4916893B2 (ja) * | 2007-01-05 | 2012-04-18 | 株式会社日本マイクロニクス | プローブの製造方法 |
| JP5123533B2 (ja) * | 2007-02-01 | 2013-01-23 | 株式会社日本マイクロニクス | 通電試験用プローブおよびその製造方法 |
| JP4916903B2 (ja) * | 2007-02-06 | 2012-04-18 | 株式会社日本マイクロニクス | プローブの製造方法 |
| JP5438908B2 (ja) * | 2008-03-11 | 2014-03-12 | 株式会社日本マイクロニクス | 電気的試験用接触子、これを用いた電気的接続装置及び接触子の製造方法 |
-
2008
- 2008-05-02 JP JP2008120306A patent/JP2009270880A/ja active Pending
-
2009
- 2009-04-03 US US12/417,861 patent/US8063651B2/en active Active
- 2009-04-22 KR KR1020090034848A patent/KR101034979B1/ko active Active
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