JP2009266979A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2009266979A
JP2009266979A JP2008113333A JP2008113333A JP2009266979A JP 2009266979 A JP2009266979 A JP 2009266979A JP 2008113333 A JP2008113333 A JP 2008113333A JP 2008113333 A JP2008113333 A JP 2008113333A JP 2009266979 A JP2009266979 A JP 2009266979A
Authority
JP
Japan
Prior art keywords
silicon substrate
semiconductor device
surface side
substrate
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008113333A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009266979A5 (enExample
Inventor
Tomoji Fujii
朋治 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2008113333A priority Critical patent/JP2009266979A/ja
Priority to TW098113278A priority patent/TW200945546A/zh
Priority to US12/428,594 priority patent/US20090267221A1/en
Publication of JP2009266979A publication Critical patent/JP2009266979A/ja
Publication of JP2009266979A5 publication Critical patent/JP2009266979A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Transceivers (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Waveguide Aerials (AREA)
JP2008113333A 2008-04-24 2008-04-24 半導体装置 Pending JP2009266979A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008113333A JP2009266979A (ja) 2008-04-24 2008-04-24 半導体装置
TW098113278A TW200945546A (en) 2008-04-24 2009-04-22 Semiconductor device
US12/428,594 US20090267221A1 (en) 2008-04-24 2009-04-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008113333A JP2009266979A (ja) 2008-04-24 2008-04-24 半導体装置

Publications (2)

Publication Number Publication Date
JP2009266979A true JP2009266979A (ja) 2009-11-12
JP2009266979A5 JP2009266979A5 (enExample) 2011-03-17

Family

ID=41214190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008113333A Pending JP2009266979A (ja) 2008-04-24 2008-04-24 半導体装置

Country Status (3)

Country Link
US (1) US20090267221A1 (enExample)
JP (1) JP2009266979A (enExample)
TW (1) TW200945546A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013021628A (ja) * 2011-07-14 2013-01-31 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
WO2013080560A1 (ja) * 2011-12-02 2013-06-06 パナソニック株式会社 無線モジュール
WO2014119302A1 (ja) * 2013-01-29 2014-08-07 パナソニック株式会社 無線モジュール及び無線モジュールの製造方法
JP2014150154A (ja) * 2013-01-31 2014-08-21 Shinko Electric Ind Co Ltd 電子部品内蔵基板及びその製造方法
JPWO2013084496A1 (ja) * 2011-12-07 2015-04-27 パナソニックＩｐマネジメント株式会社 無線モジュール
JPWO2013084479A1 (ja) * 2011-12-05 2015-04-27 パナソニックＩｐマネジメント株式会社 無線モジュール
JP2016506675A (ja) * 2013-01-14 2016-03-03 インテル・コーポレーション 裏面再配線層パッチアンテナ
JPWO2016056387A1 (ja) * 2014-10-07 2017-07-20 株式会社村田製作所 高周波通信モジュール及び高周波通信装置
WO2018101767A1 (ko) * 2016-12-01 2018-06-07 주식회사 네패스 Ems 안테나 모듈 및 그 제조방법과 이를 포함하는 반도체 패키지
JP6474879B1 (ja) * 2017-11-29 2019-02-27 株式会社フジクラ 配線基板、及び、配線基板の製造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI370530B (en) * 2008-05-21 2012-08-11 Advanced Semiconductor Eng Semiconductor package having an antenna
TWI553732B (zh) * 2013-01-25 2016-10-11 矽品精密工業股份有限公司 電子封裝件
JP6027905B2 (ja) * 2013-01-31 2016-11-16 新光電気工業株式会社 半導体装置
JPWO2014196143A1 (ja) * 2013-06-04 2017-02-23 パナソニックＩｐマネジメント株式会社 無線モジュール
US10784206B2 (en) 2015-09-21 2020-09-22 Mediatek Inc. Semiconductor package
US10130302B2 (en) 2016-06-29 2018-11-20 International Business Machines Corporation Via and trench filling using injection molded soldering
TWI663701B (zh) * 2017-04-28 2019-06-21 Siliconware Precision Industries Co., Ltd. 電子封裝件及其製法
TWI684260B (zh) * 2017-05-11 2020-02-01 矽品精密工業股份有限公司 電子封裝件及其製法
EP3486943A1 (en) * 2017-11-17 2019-05-22 MediaTek Inc Semiconductor package
TWI668831B (zh) * 2018-04-17 2019-08-11 Siliconware Precision Industries Co., Ltd. 電子裝置與電子封裝件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233621A (ja) * 1997-02-20 1998-09-02 Sharp Corp アンテナ一体化マイクロ波・ミリ波回路
JP2005176366A (ja) * 2003-12-09 2005-06-30 Internatl Business Mach Corp <Ibm> 基板内に放射素子として形成されたビアを使用してアンテナを構成する装置および方法
JP2007042978A (ja) * 2005-08-05 2007-02-15 Shinko Electric Ind Co Ltd 半導体装置
JP2007067215A (ja) * 2005-08-31 2007-03-15 Sanyo Electric Co Ltd 回路基板、回路基板の製造方法および回路装置
JP2007073849A (ja) * 2005-09-08 2007-03-22 Sharp Corp 電子回路モジュールとその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303878B1 (en) * 1997-07-24 2001-10-16 Denso Corporation Mounting structure of electronic component on substrate board
US6833613B1 (en) * 1997-12-18 2004-12-21 Micron Technology, Inc. Stacked semiconductor package having laser machined contacts
JP4381191B2 (ja) * 2004-03-19 2009-12-09 Ｏｋｉセミコンダクタ株式会社 半導体パッケージ及び半導体装置の製造方法
JP2006253631A (ja) * 2005-02-14 2006-09-21 Fujitsu Ltd 半導体装置及びその製造方法、キャパシタ構造体及びその製造方法
JP2007036571A (ja) * 2005-07-26 2007-02-08 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
US20080023824A1 (en) * 2006-07-28 2008-01-31 Texas Instruments Double-sided die
US7553752B2 (en) * 2007-06-20 2009-06-30 Stats Chippac, Ltd. Method of making a wafer level integration package

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233621A (ja) * 1997-02-20 1998-09-02 Sharp Corp アンテナ一体化マイクロ波・ミリ波回路
JP2005176366A (ja) * 2003-12-09 2005-06-30 Internatl Business Mach Corp <Ibm> 基板内に放射素子として形成されたビアを使用してアンテナを構成する装置および方法
JP2007042978A (ja) * 2005-08-05 2007-02-15 Shinko Electric Ind Co Ltd 半導体装置
JP2007067215A (ja) * 2005-08-31 2007-03-15 Sanyo Electric Co Ltd 回路基板、回路基板の製造方法および回路装置
JP2007073849A (ja) * 2005-09-08 2007-03-22 Sharp Corp 電子回路モジュールとその製造方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013021628A (ja) * 2011-07-14 2013-01-31 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
US8994153B2 (en) 2011-07-14 2015-03-31 Fujitsu Semiconductor Limited Semiconductor device having antenna element and method of manufacturing same
WO2013080560A1 (ja) * 2011-12-02 2013-06-06 パナソニック株式会社 無線モジュール
JPWO2013080560A1 (ja) * 2011-12-02 2015-04-27 パナソニックＩｐマネジメント株式会社 無線モジュール
JPWO2013084479A1 (ja) * 2011-12-05 2015-04-27 パナソニックＩｐマネジメント株式会社 無線モジュール
US9245859B2 (en) 2011-12-05 2016-01-26 Panasonic Intellectual Property Management Co., Ltd. Wireless module
JPWO2013084496A1 (ja) * 2011-12-07 2015-04-27 パナソニックＩｐマネジメント株式会社 無線モジュール
US10403511B2 (en) 2013-01-14 2019-09-03 Intel Corporation Backside redistribution layer patch antenna
JP2016506675A (ja) * 2013-01-14 2016-03-03 インテル・コーポレーション 裏面再配線層パッチアンテナ
WO2014119302A1 (ja) * 2013-01-29 2014-08-07 パナソニック株式会社 無線モジュール及び無線モジュールの製造方法
JP2014146982A (ja) * 2013-01-29 2014-08-14 Panasonic Corp 無線モジュール及び無線モジュールの製造方法
US9437535B2 (en) 2013-01-29 2016-09-06 Panasonic Intellectual Property Management Co., Ltd. Wireless module and production method for wireless module
JP2014150154A (ja) * 2013-01-31 2014-08-21 Shinko Electric Ind Co Ltd 電子部品内蔵基板及びその製造方法
JPWO2016056387A1 (ja) * 2014-10-07 2017-07-20 株式会社村田製作所 高周波通信モジュール及び高周波通信装置
WO2018101767A1 (ko) * 2016-12-01 2018-06-07 주식회사 네패스 Ems 안테나 모듈 및 그 제조방법과 이를 포함하는 반도체 패키지
JP6474879B1 (ja) * 2017-11-29 2019-02-27 株式会社フジクラ 配線基板、及び、配線基板の製造方法
WO2019107183A1 (ja) * 2017-11-29 2019-06-06 株式会社フジクラ 配線基板、及び、配線基板の製造方法
JP2019102549A (ja) * 2017-11-29 2019-06-24 株式会社フジクラ 配線基板、及び、配線基板の製造方法

Also Published As

Publication number Publication date
US20090267221A1 (en) 2009-10-29
TW200945546A (en) 2009-11-01

Similar Documents

Publication Publication Date Title
JP2009266979A (ja) 半導体装置
KR101501627B1 (ko) 전자 장치
JP5773082B2 (ja) モジュール
US9456492B2 (en) Printed circuit board with warpage prevention layer
US20140251658A1 (en) Thermally enhanced wiring board with built-in heat sink and build-up circuitry
TWI649841B (zh) High frequency module and manufacturing method thereof
JP2011249759A (ja) 電子素子内蔵印刷回路基板及びその製造方法
JP2010123708A (ja) 実装基板及び半導体モジュール
JP2007073849A (ja) 電子回路モジュールとその製造方法
US20100326707A1 (en) Methal-based package substrate, three-dimensional multi-layered package module using the same, and manufacturing method thereof
JP5577694B2 (ja) 部品内蔵モジュール
JP2005311230A (ja) 回路モジュールおよびこの回路モジュールを用いた回路装置
WO2020012598A1 (ja) 半導体装置
US20110174526A1 (en) Circuit module
TW201424486A (zh) 封裝基板與電子組裝體
TWI521655B (zh) High frequency module and high frequency module carrying device
US10952319B1 (en) Electronic component embedded substrate
JP6587795B2 (ja) 回路モジュール
US20110075376A1 (en) Module substrate radiating heat from electronic component by intermediate heat transfer film and a method for manufacturing the same
US20050258533A1 (en) Semiconductor device mounting structure
JP2020191316A (ja) 回路モジュール
TWI541952B (zh) 半導體封裝件及其製法
JP2005191075A (ja) 中継基板及びその製造方法、中継基板付き基板
JP2009129960A (ja) 半導体装置およびその製造方法
JP2007299887A (ja) 半導体集積回路素子搭載用基板および半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110202

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120104

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121211

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130528