JP2009229410A5 - - Google Patents
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- Publication number
- JP2009229410A5 JP2009229410A5 JP2008078560A JP2008078560A JP2009229410A5 JP 2009229410 A5 JP2009229410 A5 JP 2009229410A5 JP 2008078560 A JP2008078560 A JP 2008078560A JP 2008078560 A JP2008078560 A JP 2008078560A JP 2009229410 A5 JP2009229410 A5 JP 2009229410A5
- Authority
- JP
- Japan
- Prior art keywords
- contact
- reinforcing
- pedestal
- contact portion
- contactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003014 reinforcing effect Effects 0.000 description 53
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 39
- 239000007769 metal material Substances 0.000 description 27
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 20
- 239000000758 substrate Substances 0.000 description 19
- 239000000523 sample Substances 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 238000000151 deposition Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- 238000012360 testing method Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000010948 rhodium Substances 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 229910000531 Co alloy Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910001096 P alloy Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000976 Electrical steel Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008078560A JP2009229410A (ja) | 2008-03-25 | 2008-03-25 | 電気試験用接触子及びその製造方法 |
| TW098104020A TWI399544B (zh) | 2008-03-25 | 2009-02-09 | Contactors for electrical testing and methods for their manufacture |
| KR1020090015145A KR101029987B1 (ko) | 2008-03-25 | 2009-02-24 | 전기 시험용 접촉자 및 그 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008078560A JP2009229410A (ja) | 2008-03-25 | 2008-03-25 | 電気試験用接触子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009229410A JP2009229410A (ja) | 2009-10-08 |
| JP2009229410A5 true JP2009229410A5 (enExample) | 2011-03-31 |
Family
ID=41244964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008078560A Pending JP2009229410A (ja) | 2008-03-25 | 2008-03-25 | 電気試験用接触子及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2009229410A (enExample) |
| KR (1) | KR101029987B1 (enExample) |
| TW (1) | TWI399544B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9052342B2 (en) | 2011-09-30 | 2015-06-09 | Formfactor, Inc. | Probe with cantilevered beam having solid and hollow sections |
| JP2014016204A (ja) | 2012-07-06 | 2014-01-30 | Micronics Japan Co Ltd | 電気的接触子及び電気的接触子の接触方法 |
| JP5968158B2 (ja) | 2012-08-10 | 2016-08-10 | 株式会社日本マイクロニクス | コンタクトプローブ及びプローブカード |
| JP6068925B2 (ja) * | 2012-10-23 | 2017-01-25 | 株式会社日本マイクロニクス | プローブの製造方法 |
| KR102466151B1 (ko) * | 2015-11-30 | 2022-11-15 | 삼성전자주식회사 | 프로브 카드 및 그를 포함하는 테스트 장치 |
| JP7353859B2 (ja) * | 2019-08-09 | 2023-10-02 | 株式会社日本マイクロニクス | 電気的接触子及び電気的接続装置 |
| JP2021028603A (ja) | 2019-08-09 | 2021-02-25 | 株式会社日本マイクロニクス | 電気的接触子及び電気的接続装置 |
| CN111825056B (zh) * | 2020-07-17 | 2024-10-25 | 杭州电子科技大学 | 基于飞秒激光与高温成型悬臂梁探针的方法及悬臂梁探针 |
| KR102762781B1 (ko) * | 2022-06-24 | 2025-02-05 | 주식회사 가온닉스 | 전자부품의 회로 검사용 프로브 제조 방법 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0390865A (ja) * | 1989-09-01 | 1991-04-16 | Sumitomo Electric Ind Ltd | プローブカードのプローブ |
| JP3745184B2 (ja) * | 1999-03-25 | 2006-02-15 | 株式会社東京カソード研究所 | プローブカード用探針及びその製造方法 |
| JP2001337110A (ja) * | 2000-05-29 | 2001-12-07 | Bureijingu:Kk | プローブピンおよびプローブカード |
| JP4527267B2 (ja) * | 2000-11-13 | 2010-08-18 | 東京エレクトロン株式会社 | コンタクタの製造方法 |
| AU2003261854A1 (en) * | 2003-05-13 | 2004-12-03 | Kabushiki Kaisha Nihon Micronics | Probe for testing electric conduction |
| JP2005351846A (ja) * | 2004-06-14 | 2005-12-22 | Micronics Japan Co Ltd | プローブ針 |
| WO2006075408A1 (ja) * | 2005-01-14 | 2006-07-20 | Kabushiki Kaisha Nihon Micronics | 通電試験用プローブ |
| JP2007192719A (ja) * | 2006-01-20 | 2007-08-02 | Japan Electronic Materials Corp | プローブカード |
| JP2007271343A (ja) * | 2006-03-30 | 2007-10-18 | Sumitomo Electric Ind Ltd | コンタクトプローブおよびその製造方法 |
-
2008
- 2008-03-25 JP JP2008078560A patent/JP2009229410A/ja active Pending
-
2009
- 2009-02-09 TW TW098104020A patent/TWI399544B/zh active
- 2009-02-24 KR KR1020090015145A patent/KR101029987B1/ko active Active
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