JP2009229410A5 - - Google Patents

Description

Contactor for electrical test and method for manufacturing the same

  The present invention relates to a contact used for electrical testing of a semiconductor device such as a semiconductor integrated circuit and a method for manufacturing the contact.

  Planar semiconductor devices such as uncut integrated circuits formed on semiconductor wafers and integrated circuits cut from semiconductor wafers are electrically tested to see if they are manufactured according to specifications. The

  This type of electrical test is performed using a probe card in which a plurality of probes, that is, contacts that are individually pressed against pad electrodes of a semiconductor device are arranged on a substrate such as a wiring substrate or a probe substrate. Such a probe card is attached to the tester so as to electrically connect the pad electrode and the test device or tester electrical circuit.

  As one of the contacts used in this type of probe card, a plate-like mounting portion that is attached to the substrate so as to extend in the vertical direction, and a plate-like arm that extends from the lower end portion of the mounting portion to one side in the left-right direction. A plate-like pedestal that protrudes downward from the tip of the arm, and a contact that protrudes downward from the lower end of the pedestal, the lower end of the contact being the needle tip or There exists a plate-shaped thing including a columnar contact part (namely, contact part to a pad electrode) (patent documents 1).

  In the above contact, the attachment portion, the arm portion, and the pedestal portion are contact main bodies formed in a plate shape with a conductive metal material. Such a contact is attached to the substrate at the upper end of the attachment portion, and is supported on the substrate in a cantilever shape.

  A probe card in which a large number of contacts as described above are arranged on a substrate is attached to a tester. Each contact is pressed by the pad electrode with the probe tip in a state where the probe card is attached to the tester, whereby overdrive acts on the contact.

  As a result, the contact is elastically deformed at the arm portion, and the oxide film on the surface of the pad electrode is scraped off with the needle tip. The action of scraping the oxide film on the electrode surface with the needle tip is repeated for each semiconductor device to be tested.

  However, in this type of contact, when the overdrive is applied to the contact, as described above, a large load is applied to the contact that causes the contact to bend around the position on the side of the arm.

  For this reason, damage, such as a crack, a chip, and a crease, is generated in the contact portion by repeatedly pressing the pad electrode. In addition, a twisting force acts on the contact, particularly the contact portion when the tip of the needle is pressed to a place other than the pad electrode due to the displacement of the needle tip position with respect to the pad electrode, or is brought into contact with the end of the pad electrode. As a result, the contact portion is often damaged. A contact having such a damaged contact portion eventually breaks down and becomes unusable.

  In order to solve the individual problems as described above, a technique for reinforcing the location of the contact portion in the direction in which the needle tip slides on the pad electrode with the elastic deformation of the arm portion (that is, the scrub direction) (Patent Document 2) Has been proposed. In addition, the present inventors have invented a technique for reinforcing the location of the contact portion in the direction perpendicular to the scrub direction with respect to the twist described above (Japanese Patent Application No. 2006-270543).

  However, in the type of contact described in Patent Document 1, when an overdrive is applied to the contact, a complicated force that causes cracks, chips, breaks, twists, and the like is applied to the contact. Therefore, even if the technique that only solves each problem, such as the technique of Patent Document 2 and the proposed technique, is applied to the contact of Patent Document 1 in which the complex force acts on the contact portion, the contact Child specific issues are not solved.

WO 2006/075408 A1 JP 2007-192719 A

  An object of the present invention is to prevent a contact portion from being bent or chipped due to repeated overdrive and to enable a normal electrical test.

  An electrical test contact according to the present invention includes a mounting portion that extends in the vertical direction, an arm portion that extends from the lower end portion of the mounting portion to at least one side in the left-right direction, and a base that protrudes downward from the tip portion of the arm portion. A plate-like contactor body comprising a portion, a contact portion protruding downward from a lower end portion of the pedestal portion, and a contact portion having a lower end of the contact portion as a needle tip that comes into contact with an electrode of the semiconductor device, A reinforcing part disposed at least in the vicinity of the boundary part of the contact part and the pedestal part. The reinforcing portion is made of a metal material that is different from the contact main body and has higher toughness than the contact portion.

  The reinforcing portion may include a film covering a surface region extending from the lower end portion of the pedestal portion to the contact portion and covering all remaining surface regions excluding the needle tip.

  The metal material forming the reinforcing portion may include an alloy containing at least two kinds of metal elements.

  The reinforcing part may include at least two types of metal material layers stacked.

  The electrical test contact manufacturing method according to the present invention is a method of manufacturing an electrical test contact comprising a plate-shaped contact main body and a contact portion protruding from the contact main body and having a tip as a needle tip. Applies to

  Such a manufacturing method includes the following steps.

  A first photoresist layer having a first recess at least imitating the contact portion is formed on the base member, and a sacrificial layer is formed in the first recess by depositing an appropriate material. Process.

  After removing the first photoresist layer, a second photoresist layer having a second recess imitating the contact portion and a portion of the contact main body in the vicinity of the contact portion is formed on the base member. A conductive material formed on the first recess layer by depositing a conductive material having higher toughness than the contact portion and having a higher hardness than the first reinforcement layer. A second step of forming the contact portion in the second recess by depositing.

  The second photoresist layer is removed, and a third photoresist layer having a third recess imitating the contact body is formed on the base member, and has a conductivity different from that of the first reinforcing layer. A third step of forming the contact body in the third recess by depositing a conductive material having a higher toughness than the contact portion.

  After removing the third photoresist layer, a fourth photoresist layer having a fourth recess imitating the contact portion and a portion of the contact main body in the vicinity of the contact portion is formed on the base member. A fourth step of forming a second reinforcing layer in the fourth recess by depositing a conductive material formed thereon and having a higher toughness than the contact portion and different from the probe body;

  A fifth step of separating the contact including the first reinforcing layer, the contact portion, the contact main body, and the second reinforcing layer from the base member.

  In the manufacturing method as described above, the material deposition in each of the recesses may be formed by at least one selected from the group including an electroplating technique, a sputtering technique, and an evaporation technique.

  If the reinforcing part is made of a metal material that is different from the contact body and has a higher toughness than the contact part, the contact part is caused by twisting in the direction other than the scrub direction and acts on the contact in three dimensions. It becomes flexible with respect to the irregular force to make, and a contact part becomes difficult to damage and break.

  If the reinforcing part includes a film covering the entire surface area except the needle tip from the lower end of the pedestal part to the contact part, the contact part becomes more flexible against irregular forces, and more It becomes difficult to damage and break.

  Examples will be described below.

  [Definition of terms]

  In the present invention, in FIG. 2, the direction in which the attachment portion side and the needle tip side are respectively upward and downward is referred to as the vertical direction, and the distal end side and the proximal end side of the arm portion of the contact are respectively leftward. The direction to the right is referred to as the left-right direction, and the paper back direction (thickness direction of the contact) perpendicular to the vertical direction and the left-right direction is referred to as the front-rear direction.

  However, these directions differ depending on the posture of the substrate in a state in which the substrate on which a large number of contacts are arranged is attached to the tester. Therefore, for example, the vertical direction in the present invention may be an upside down state or a diagonal direction in a state where a substrate on which a large number of contacts are arranged is attached to a tester. Also good.

  [Electrical connection device and contactor embodiment]

  Referring to FIG. 1, in an electrical connection apparatus 10, whether a semiconductor device 12 is a flat test object such as an integrated circuit formed on a semiconductor wafer, and is the semiconductor device 12 manufactured according to specifications? In the electrical test of whether or not, it is used to electrically connect the pad electrode of the semiconductor device 12 and the tester.

  In the illustrated example, the semiconductor device 12 is an uncut one formed on a semiconductor wafer, but may be a cut semiconductor device. In the electrical test using the electrical connection apparatus 10, a plurality of semiconductor devices 12 are electrically tested simultaneously.

  The electrical connection apparatus 10 includes a probe card 16 having a plurality of contacts 14 for electrical testing, a chuck top 18 that receives the semiconductor device 12 on the upper surface, and the chuck top 18 in at least the front-rear direction, the left-right direction, and the up-down direction. It includes an inspection stage 20 that is three-dimensionally moved in three directions, and an area sensor 22 that is disposed on the inspection stage 20 so as to photograph at least one contactor 14.

  As shown in FIG. 2, each contactor 14 includes a plate-like mounting portion 24 extending in the vertical direction, a plate-like arm portion 26 extending from the lower end portion of the mounting portion 24 to one side in the left-right direction, and an arm portion. 26 includes a plate-like pedestal portion 28 that protrudes downward from the front end portion of the plate 26 and a plate-like or columnar contact portion 30 that protrudes downward from the lower end of the pedestal portion 28.

  The attachment portion 24 integrally has a plate-like attachment region 24a attached to a substrate described later at the upper end portion and a plate-like extension portion 24b extending downward from the lower end portion of the attachment region 24a.

  The arm portion 26 includes plate-like first and second arms 32 and 34 extending in the left-right direction with an interval in the vertical direction, and the first and second arms 32 and 34 having their front end portion and rear end portion. And plate-like first and second connecting portions 36 and 38 that are connected to each other.

  The arm portion 26 also includes the arm portion 26 that integrally follows the lower end portion of the attachment portion 24 (actually, the extension portion 24b), and the first and second arms 32 and 34 are lower end portions of the attachment portion 24. The second connecting portion 38 located on the base end side is supported by the mounting portion 24 so as to extend from the side to the one side in the left-right direction.

  The pedestal portion 28 is such that the pedestal portion 28 extends in the left and right directions and downward below the distal end portion of the second arm 34, and the lower edge portion of the distal end side and the lower edge portion of the first connecting portion 36. And it continues as one. The pedestal portion 28 forms a plate-like contactor body in cooperation with the mounting portion 24 and the arm portion 26.

  The attachment portion 24, the arm portion 26, and the pedestal portion 28, which form the contact body together, are in the form of an integral plate having substantially the same uniform thickness dimension in the front-rear direction. Therefore, the contactor 14 has a flat plate shape as a whole.

  As shown in FIGS. 3 to 5, the lower surface region located around the contact portion 30 of the pedestal portion 28 has six surfaces 44 a and 44 b located around the contact portion 30 when the contact portion 30 is viewed from below. , 44c, 44d, 44e and 44f.

  Each of the six surfaces 44a, 44b, 44c, 44d, 44e, and 44f is such that the lower part is on the contact part 30 side, in other words, the lower part is on the contact part 30 side. It is inclined with respect to a horizontal plane (virtual axis 48 extending vertically through the center of the contact portion 30).

  Of the six surfaces, the two inclined surfaces 44 a and 44 b are located on one side and the other side in the left-right direction with respect to the contact portion 30, respectively. The other two inclined surfaces 44c and 44d are respectively located on one side in the left-right direction with respect to the contact portion 30 and on one side and the other side in the front-rear direction. The remaining two inclined surfaces 44e and 44f are respectively located on the other side in the left-right direction with respect to the contact portion 30 and on one side and the other side in the front-rear direction.

  As shown in FIG. 3 to FIG. 5, the contact portion 30 has a flat needle tip 30 a that is pressed against the electrode of the semiconductor device 12 at the lower end, and has a plate shape with the front-rear direction as the thickness direction. Have. The thickness dimension of the contact portion 30 in the front-rear direction is smaller than the thickness dimension of other parts in the same direction, particularly the contact body.

  The contact portion 30 has a shape similar to an isosceles triangle when the reinforcing portion 40 is viewed from the front-rear direction. For this reason, the contact part 30 includes at least four surfaces 46a, 46b, 46c and 46d that form the outer peripheral surface of the contact part 30 when the contact part 30 is viewed from below the needle tip 30a, like the pedestal part 28. .

  The two surfaces 46a and 46b are positioned on the left and right sides of the axis 48, respectively, so that the portion on the side of the axis 48 is lower, in other words, the portion on the lower side is on the side of the axis 48. It is set as the inclined surface inclined with respect to the horizontal surface (and axis line 48) so that it may become. The other two surfaces 46c and 46d are vertical surfaces that are positioned forward and rearward with respect to the axis 48 and extend in the vertical direction.

  On the other hand, the lower end surface of the contact portion 30, that is, the needle tip 30 a is a flat surface perpendicular to the axis 48 so as to be pressed by the electrode of the semiconductor device 12.

  Each of the surfaces 44a and 44b, 44c and 44d, 44e and 44f, 44c and 44e, 44d and 44f, 46a and 46b, 46c and 46d may be formed symmetrically or asymmetrically. Also good. That is, these surfaces may have different angles with respect to the horizontal plane and the axis 48.

  As shown in FIGS. 3 to 7, the contact 14 also includes a reinforcing portion 40 disposed in the vicinity of the boundary portion between the contact portion 30 and the pedestal portion 28. The reinforcing portion 40 is formed of a metal material that is different from the contact main body and has a higher toughness than the material of the contact portion 30.

  In FIGS. 3 to 5, the reinforcing portion 40 is shown as a broken hatched region. On the other hand, in FIG. 6, which is a cross-sectional view taken along line 6-6 in FIG. 4, the reinforcing portion 40 is shown as a hatched region with a lower right.

  The reinforcing portion 40 is a film formed by coating the metal material as described above over the entire surface region that is the surface region extending from the lower end portion of the pedestal portion 28 to the contact portion 30 and excluding the needle tip 30a. ing.

  That is, in the illustrated example, the reinforcing portion 40 is provided over all remaining surface regions of the contact portion 30 except the needle tip 30a and all surface regions on the contact portion 30 side of the pedestal portion 28. Yes.

  However, at least some of the reinforcing portions 40 of the surfaces 44a, 44b, 44c, 44d, 44e, and 44f of the pedestal portion 28 may be omitted.

  As materials for other parts of the contact 14 excluding the reinforcing portion 40, nickel (Ni), nickel-phosphorus alloy (Ni-P), nickel-tungsten alloy (Ni-W), rhodium (Rh), phosphor bronze, palladium -Conductive metal materials, such as cobalt alloy (Pd-Co) and palladium-nickel-cobalt alloy (Pd-Ni-Co), can be mentioned.

  Other parts of the contactor 14 excluding the reinforcing portion 40 may be entirely made of the above material. However, the contact portion 30 may be made of at least a material different from the pedestal portion 28, particularly a material having a higher hardness than the pedestal portion 28. In the latter case, the pedestal 28 may be made of the same material as the arms 32 and 34, the connecting parts 36 and 38, the attachment 24 and the extension 24b, or may be made of a different material. .

  In the illustrated example, the contact portion 30 is made of a material having higher hardness than the pedestal portion 28. For this reason, the contact portion 30 is firmly maintained on the pedestal portion 28 by a coupling portion (not shown) made of the same conductive metal material as the contact portion 30. The coupling portion is embedded in a state where a part thereof is exposed on one surface in the front-rear direction of the pedestal portion 28.

  If the entire other part of the contactor 14 excluding the reinforcing part 40 is manufactured from the same material, or the part excluding the contact part 30 and the reinforcing part 40 is manufactured from the same material, the contactor 14 can be easily manufactured. .

  As the material of the reinforcing portion 40, a metal material having a higher toughness than that of the contact portion 30, which is a metal material different from at least another portion of the contact 14 except the reinforcing portion 40, in particular, a material of the contact main body is used. .

  For example, when the pedestal portion 28 is made of nickel and the contact portion 30 is made of rhodium or tungsten, a metal material other than nickel and having a higher toughness than rhodium or tungsten is used as the material of the reinforcing portion 40. Used.

  The contact 14 as described above can be manufactured by performing exposure and development of a photoresist and deposition of a conductive material formed by development and in a recess a plurality of times.

  Each contactor 14 is separated by a method such as soldering on a flat conductive portion (an attachment land described below in the illustrated example) formed on the lower surface of the probe card 16 on the upper surface of the attachment portion 24. Mounted like a cantilever.

  As shown in FIG. 1, the probe card 16 includes a wiring board 50 made of an electrically insulating material such as glass-filled epoxy, a ceramic board 52 attached to the lower surface of the wiring board 50, and a lower surface of the ceramic board 52. An attached probe board 54 and a reinforcing plate 56 attached to the upper surface of the wiring board 50 are included.

  The wiring substrate 50 and the ceramic substrate 52 have a plurality of internal wirings that are electrically connected to each other. The wiring board 50 also has a plurality of connection terminals such as tester lands that are electrically connected to a tester (not shown) at the outer peripheral edge of the upper surface. Each connection terminal is electrically connected to the internal wiring of the wiring board 50.

  The probe substrate 54 is a multilayer substrate having a plurality of internal wirings electrically connected to the internal wirings of the ceramic substrate 52, and is electrically connected to the internal wirings in a one-to-one manner. A plurality of mounting lands are provided on the lower surface. Each contact 14 is attached to an attachment land.

  The reinforcing plate 56 is made of a metal material such as stainless steel, and prevents the wiring substrate 50 from being bent in cooperation with the ceramic substrate 52.

  The chuck top 18 sucks the semiconductor device 12 in a vacuum and keeps it immovable. The inspection stage 20 is a three-dimensional movement mechanism that moves the chuck top 18 in three directions, the front-rear direction, the left-right direction, and the up-down direction, and rotates angularly around an axis that extends the chuck top 18 in the up-down direction. A θ moving mechanism is provided.

  As shown in FIG. 1, the area sensor 22 focuses the light beam 58 and directs it toward the needle tip 30a of the specific contactor 14 to illuminate the needle tip 30a and the vicinity thereof, and from the needle tip 30a and the vicinity thereof. The reflected light is received and converted into an electrical signal. The output signal of the area sensor 22 is supplied to an image processing apparatus that determines the coordinate position of a specific contact 14.

  In the illustrated example, the opening angle of the light beam 58 with respect to the optical axis is smaller than the inclination angles of the inclined surfaces 44a, 44b, 44c, 44d, 44e and 44f of the pedestal 28 with respect to the horizontal plane. However, such an opening angle may be the same as or larger than the inclination angles of the inclined surfaces 44a, 44b, 44c, 44d, 44e, and 44f of the pedestal portion 28.

  In the electrical connection device 10 described above, the light beam 58 applied to the contact portion 30 from below the contactor 14 is reflected on the outer surface of the contact portion 30 and the inclined surfaces of the pedestal portion 28 and enters the area sensor 22. To do. The output signal of the area sensor 22 is used to determine the coordinate position of the needle tip 30a with respect to the semiconductor device 12 or the tester after image processing.

  The probe card 16 having the contacts 14 arranged on the probe substrate 54 as described above is attached to a tester including the chuck top 18, the inspection stage 20, and the area sensor 22. In the state in which the probe card 16 is attached to the tester, each contactor 14 is pressed against the pad electrode by the needle tip 30a, whereby an overdrive acts on the contactor.

  As a result, the contact 14 is elastically deformed at the arm portion 26 and scrapes the oxide film on the surface of the pad electrode with the needle tip 30a. The action of scraping the oxide film on the electrode surface with the needle tip 30a is repeated for each semiconductor device 12 to be tested.

  However, in the contact 14, the reinforcing portion 40 is formed of a metal material that is different from the contact main body and has a toughness higher than that of the contact portion 30. Therefore, the contact portion 30 is caused by twisting in a direction other than the scrub direction. It becomes flexible with respect to the irregular force which acts on the child 14 three-dimensionally, and the contact part 30 becomes difficult to be damaged and broken.

  Further, since the reinforcing portion 40 is a surface region extending from the lower end portion of the pedestal portion 28 to the contact portion 30 and covers all the surface regions except the needle tip 30a, the contact portion 30 is more resistant to irregular force. It becomes flexible and more difficult to damage and break.

  The contact 14 as described above is a conductive material using a photolithography technique using an exposure technique, an electroplating technique, a sputtering technique, a vapor deposition technique, etc., even though the pedestal part 28 and the contact part 30 have a complicated structure. It can be manufactured using a metal material deposition technique.

  [Example of contactor manufacturing method]

  Hereinafter, the Example of the manufacturing method of the contactor 14 is described using FIGS. 7 to 8 are cross-sectional views of the contact 14 when viewed leftward along the axis 48 in FIG.

  First, as shown in FIG. 7A, nickel (Ni) and copper (Cu) are sputtered on the surface of a base member 60 in the form of a plate made of silicon or stainless steel, and the contact of the manufactured contactor A thin release layer (not shown) is formed to facilitate peeling.

  Next, as shown in FIG. 7B, a photoresist 62 is formed in a layer shape on the base member 60 (actually, a peeling layer) by coating.

  Next, as shown in FIG. 7C, the photoresist 62 is exposed in a state where a mask for forming at least a recess 64 imitating the contact portion 30 is put on the photoresist 62, and thereafter development processing is performed. Is done.

  Next, as shown in FIG. 7D, a sacrificial layer 66 having a predetermined thickness dimension is formed in the recess 64 by a deposition technique such as electroplating, sputtering, or vapor deposition.

  Next, as shown in FIG. 7E, after the photoresist 62 is removed, a photoresist 68 is formed on the base member 60 and the sacrificial layer 66 by coating.

  Next, as shown in FIG. 7F, the photoresist 68 is exposed in a state where a photomask is put on, and thereafter developed. Thereby, the recess 70 is formed in the photoresist 68.

  Next, as shown in FIG. 8A, a crank-shaped first reinforcing layer 74 having a similar shape to the tip 72 is cranked in the recess 70 by a deposition technique such as electroplating, sputtering, or vapor deposition. It is formed. The first reinforcing layer 74 is formed in a layer shape using the conductive metal material as described above.

  The deposition technique for the first reinforcing layer 74 uses a metal material such as platinum or nickel that has a toughness superior to the material used for the contact portion 30 and is different from the contact body. However, the first reinforcing layer 74 may be two or more metal material layers in which a plurality of types of metal materials each having the above-described characteristics are laminated.

  Next, as shown in FIG. 8B, the tip 72 is formed on the first reinforcing layer 74 in the recess 70 by a deposition technique such as electroplating, sputtering, or vapor deposition. The distal end portion 72 is formed in a crank shape similar to the first reinforcing layer 74 using a conductive metal material having high hardness such as rhodium (Rh) or tungsten (W).

  As shown in FIG. 8B, the recess 70 imitates the distal end portion 72 of the contact 14. The distal end portion 72 is a portion 72 a that forms the contact portion 30 and a portion 72 b that forms a part of the pedestal portion 28, and is a portion that continues integrally with the contact portion 30 and is joined to the remaining portion of the pedestal portion 28. 72b, which corresponds to a partial arrangement region of the reinforcing portion 40.

  Next, as shown in FIG. 8C, after the photoresist 68 is removed, a photoresist 75 is formed on the base member 60, the sacrificial layer 66, and the tip 72 by coating.

  Next, as shown in FIG. 8D, the photoresist 75 is exposed in a state where a photomask is put on, and thereafter developed. As a result, a recess 76 that imitates the contact body is formed in the photoresist 75.

  Next, as shown in FIG. 8 (E), a main body portion 80 that imitates a contact body including a portion that acts as the pedestal portion 28 together with the portion 72b of the tip end portion 72 is formed by a deposition technique such as electroplating, sputtering, or vapor deposition. A recess 76 is formed.

  The main body 80 is made of nickel-phosphorus alloy (Ni-P), nickel-tungsten alloy (Ni-W), rhodium (Rh), phosphor bronze, nickel (Ni), palladium-cobalt alloy (Pd-Co), and palladium. A nickel-cobalt alloy (Pd—Ni—Co) or the like is used to form the conductive metal material having better toughness than the contact portion 30.

  Next, as shown in FIG. 9A, after the photoresist 75 is removed, a photoresist 82 is formed in layers on the base member 60, the sacrificial layer 66, the tip 72, and the main body 80 by coating. .

  Next, as shown in FIG. 9B, the photoresist 82 is exposed and thereafter developed. Thereby, a recess 84 is formed in the photoresist 82. The recess 84 is similar to the recess 70 shown in FIGS. 8A and 8B and imitates the tip 72 of the contactor 14.

  Next, as shown in FIG. 9C, a crank-like second reinforcing layer 86 having a shape almost symmetrical to the first reinforcing layer 74 is formed into a concave portion by a deposition technique such as electroplating, sputtering, or vapor deposition. 84 is formed in a crank shape. The second reinforcing layer 86 is formed in a layer shape using a conductive metal material like the first reinforcing layer 74.

  The deposition technique for the second reinforcing layer 86 is similar to the first reinforcing layer 74 and has a toughness superior to the material used for the contact portion 30 such as platinum and nickel and is different from the contact body. Metal materials can be used. The second reinforcing layer 86 may also be two or more metal material layers in which a plurality of types of metal materials are laminated.

  Next, as shown in FIG. 9D, the photoresist 82 is removed.

  Next, as shown in FIG. 9E, the sacrificial layer 66 is removed by etching, and the completed contact 14 is peeled off from the base member 60.

  As a result of the above, as shown in FIGS. 2 to 7, the predetermined metal material is coated over the entire surface area other than the needle tip 30 a, which is the surface area extending from the lower end portion of the pedestal portion 28 to the contact portion 30. The contactor 14 including the reinforcing portion 40 formed by the above is manufactured.

  As described above, the reinforcing portion 40 manufactured as described above includes all the remaining surface areas of the contact portion 30 except the needle tip 30a and all the surfaces on the contact portion 30 side of the pedestal portion 28. It is provided over the area.

  The portions of the reinforcing portion 40 corresponding to the side surfaces of the pedestal portion 28 and the contact portion 30 and the downward surface of the pedestal portion 28 correspond to the recesses 84 in the steps of FIGS. 9B and 9C, for example. It can be formed by making the size of the portion larger than the size of the corresponding portion of the contact 14 by the thickness of the second reinforcing layer 86 and depositing a predetermined metal material in the recess 84.

  As shown in FIGS. 9C to 9E, in the contact manufactured by the above method, at least a portion of the second reinforcing layer 86 opposite to the first reinforcing layer 74 is the main body. Projecting from the portion 80.

  The arm unit 26 may include a single arm 32 or 34. In this case, the connecting portions 36 and 38 are omitted, the contact portion 30 is formed integrally with the distal end side of the arm 32 or 34, and the extension portion 26 is integrally formed with the rear end side of the arm 32 or 34. It may be formed.

  The reinforcing portion 40 may be disposed in the form of at least a double membrane on both surfaces in the scrub direction perpendicular to both surfaces in the thickness direction near the boundary portion of the contact portion 30 and the pedestal portion 28. Such a film can be formed by performing a photolithography technique and a deposition technique at least twice on both sides in the scrub direction.

  The present invention can be used not only for electrical testing of electronic devices such as uncut integrated circuits formed on semiconductor wafers, but also for electrical testing of electronic devices such as cut integrated circuits. it can.

  The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

It is a figure which shows one Example of the electrical connection apparatus which concerns on this invention. It is a front view which shows one Example of the contactor which concerns on this invention. It is a front view which expands and shows the front-end | tip part of the contactor shown in FIG. It is the right view which looked at the front-end | tip part shown in FIG. 3 from the left in FIG. It is a bottom view of the front-end | tip part shown in FIG. FIG. 6 is a cross-sectional view taken along line 6-6 of FIG. It is process drawing for demonstrating the manufacturing method of the contactor which concerns on this invention. It is process drawing following FIG. 7 for demonstrating the manufacturing method of a contactor. It is process drawing following FIG. 8 for demonstrating the manufacturing method of a contactor.

10 Electrical connection device 12 Semiconductor device (inspected object)
DESCRIPTION OF SYMBOLS 14 Contact 16 Probe card 18 Chuck top 20 Inspection stage 22 Area sensor 24 Mounting part 26 Arm part 28 Base part 30 Contact part 30a Needle point 40 Reinforcement part