CN111825056A - Method for forming cantilever probe based on femtosecond laser and high temperature and cantilever probe - Google Patents
Method for forming cantilever probe based on femtosecond laser and high temperature and cantilever probe Download PDFInfo
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- CN111825056A CN111825056A CN202010692685.6A CN202010692685A CN111825056A CN 111825056 A CN111825056 A CN 111825056A CN 202010692685 A CN202010692685 A CN 202010692685A CN 111825056 A CN111825056 A CN 111825056A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00111—Tips, pillars, i.e. raised structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00547—Etching processes not provided for in groups B81C1/00531 - B81C1/00539
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
Abstract
The invention belongs to the field of micro-nano manufacturing, and particularly relates to a method for forming a cantilever probe based on femtosecond laser and high temperature and the cantilever probe. The molding method comprises the following steps: s1, placing the silicon substrate with the size of micro-nano order under a microscope; s2, performing ion etching on the surface of the silicon substrate to form a plurality of holes; s3, performing high-temperature forming on the silicon substrate subjected to the ion etching to form a cavity in the silicon substrate, and obtaining a cantilever beam with the cavity in the silicon substrate; and S4, fixing one end of the cantilever beam with the cavity inside, adjusting the performance parameters of the femtosecond laser, and molding the probe at the other end of the cantilever beam by using the femtosecond laser. The method for manufacturing the cantilever beam probe is simple and effective, saves the cost for purchasing expensive test equipment, and improves the resonant frequency of the cantilever beam probe by containing the cavity in the cantilever beam, thereby improving the detection precision of the cantilever beam probe.
Description
Technical Field
The invention belongs to the field of micro-nano manufacturing, and particularly relates to a method for forming a cantilever probe based on femtosecond laser and high temperature and the cantilever probe.
Background
The micro cantilever is an extremely precise micro mechanical structure and is widely applied to the fields of micro sensors and atomic force microscopes. The working principle of the method is that tiny physical signal changes and chemical signal changes are converted into changes of electric signals, and later accurate calculation and recording are facilitated. Common physical signal changes and chemical signal changes are primarily surface pressure changes, thermal changes, and chemical reaction changes of the cantilever beam.
The micro-cantilever probe is the most important component of the micro-sensor, and is generally prepared by adopting the technologies of low-pressure chemical vapor deposition, chemical corrosion, sputtering and the like. These techniques have a series of disadvantages such as expensive equipment, extremely complicated manufacturing process, and low molding efficiency. The defects of the prior art inhibit the application development of the micro-cantilever in the field of sensors to a certain extent.
For example, chinese patent application No. CN200910303393.2 discloses a method for manufacturing a piezoelectric micro-cantilever probe, which uses a local piezoelectric layer method to successfully solve the problem of interference between a silicon tip and the surface of a mask in a photolithography process, thereby realizing integration of a piezoelectric thin film process and a wet etching tip process and maintaining the sharpness of the tip. The length of the local piezoelectric layer can also be changed along with the change of the layout design length; and the piezoelectric film is used as a sensitive component and has sensing and executing functions, so that the piezoelectric micro-cantilever beam probe can be used as a micro-sensor and a micro-actuator. But the manufacturing method of the piezoelectric layer comprises the following steps: sputtering a titanium/platinum metal film to form a bottom electrode; photoetching the front side, and patterning the bottom electrode to form a U-shaped window; preparing a piezoelectric film by using a sol-gel method; sputtering a platinum metal film as an upper electrode, and patterning the upper electrode by using a stripping process; using the dried piezoelectric film sol as an insulating layer; in the sputtering and patterning of the bottom electrode, firstly titanium is sputtered as a transition layer, and then platinum is sputtered as the bottom electrode; the corrosive agents of the titanium and platinum metal films are hydrofluoric acid solution and aqua regia respectively. It is understood that the manufacturing method uses techniques such as chemical etching and sputtering, and therefore expensive test equipment is required and the manufacturing process is extremely complicated.
Disclosure of Invention
The invention aims to provide a method for forming a cantilever probe based on femtosecond laser and high temperature and the cantilever probe, aiming at the defects of the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for forming a cantilever probe based on femtosecond laser and high temperature comprises the following steps:
s1, placing the silicon substrate with the size of micro-nano order under a microscope;
s2, performing ion etching on the surface of the silicon substrate to form a plurality of holes;
s3, performing high-temperature forming on the silicon substrate subjected to the ion etching to form a cavity in the silicon substrate, and obtaining a cantilever beam with the cavity in the silicon substrate;
and S4, fixing one end of the cantilever beam with the cavity inside, adjusting the performance parameters of the femtosecond laser, and molding the probe at the other end of the cantilever beam by using the femtosecond laser.
Preferably, in step S4, a femtosecond laser is irradiated at the center of the other end of the cantilever to form a probe.
Preferably, the length and width of the silicon substrate are on the order of micrometers.
Preferably, the height of the silicon substrate is on the order of nanometers.
Preferably, in step S2, the height of the hole is H, the diameter of the hole is D, and the distance between the central axes of two adjacent holes is Ds; the height H of the hole is smaller than the thickness of the silicon substrate; the distance Ds between the central axes of two adjacent holes is equal to the diameter D of the hole.
Preferably, in step S3, the temperature for high-temperature molding is 1150 ℃.
Preferably, in step S4, the energy power and the irradiation power of the femtosecond laser can be adjusted to ensure that the end of the cantilever is shaped into a corresponding probe.
Preferably, the time for performing the femtosecond laser irradiation after each adjustment is 10 seconds.
Preferably, the femtosecond laser irradiation power is 75 mW.
The invention also discloses a cantilever probe which adopts the forming method of any scheme, and the cantilever contains a cavity inside.
Compared with the prior art, the invention has the beneficial effects that:
1. the method for manufacturing the cantilever probe is simple and effective, does not apply the technologies of chemical corrosion, sputtering and the like, saves the cost for purchasing expensive test equipment, has simple manufacturing and processing, is beneficial to the industrialized manufacturing of the cantilever probe, and corresponds to the green ecological manufacturing technology advocated at present.
2. The cantilever beam of the invention contains a cavity inside, thus improving the resonance frequency of the cantilever beam probe and further improving the detection precision of the cantilever beam probe.
3. The corresponding probe can be formed at the end part of the cantilever beam by adjusting the irradiation power and the energy power of the femtosecond laser, the manufacturing and the processing are simple, and the industrialized manufacturing of the cantilever beam probe is facilitated.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a method for forming a cantilever probe based on femtosecond laser and high temperature;
FIG. 2 is a schematic view of a silicon substrate after ion etching;
FIG. 3 is a schematic structural view of a cantilever beam;
FIG. 4 is a schematic structural diagram of a cantilever beam irradiated by a femtosecond laser;
FIG. 5 is a schematic structural diagram of a cantilever probe;
FIG. 6 is a schematic diagram of the operation of the cantilever probe;
the codes in the figure are respectively: 1-a silicon substrate; 2-hole; 3-a cavity; 4-femtosecond laser; 5-cantilever beam fixing frame; 6-cantilever beam; 7-a probe; 8-cantilever probe; 9-a laser generator; 10-a photodetector; 11-an object to be measured; h-height of the pores; d-diameter of the hole; ds-the distance between the central axes of two adjacent wells.
Detailed Description
The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
The first embodiment is as follows:
referring to fig. 1, 2, 3, 4 and 5, the embodiment provides a method for forming a cantilever probe based on a femtosecond laser and a high temperature, which includes the steps of:
s1, placing the silicon substrate 1 with the size of micro-nano order under a microscope;
s2, performing ion etching on the surface of the silicon substrate 1 to form a plurality of holes 2;
s2, performing high-temperature forming on the silicon substrate 1 subjected to ion etching to form a cavity 3 in the silicon substrate 1, and obtaining a cantilever beam 6 with the cavity 3 inside;
and S4, fixing one end of the cantilever beam 6 with the cavity 3 inside, adjusting the performance parameters of the femtosecond laser 4, and molding the probe by using the femtosecond laser 4 at the other end of the cantilever beam 6.
The micro-cantilever probe is the most important component of the micro-sensor, and is generally prepared by techniques such as low-pressure chemical vapor deposition, chemical etching, sputtering and the like, but the techniques have a series of disadvantages of expensive experimental equipment, extremely complex manufacturing process, low molding efficiency and the like. The defects of the prior art inhibit the application development of the micro-cantilever in the field of sensors to a certain extent.
In the invention, the femtosecond laser 4 is used for irradiating the surface of the cantilever beam 6, the probe 7 on the surface of the cantilever beam 6 is formed based on the temperature field of the femtosecond laser 4, and the cavity 3 is formed in the cantilever beam 6 based on high temperature, so that the resonance frequency of the cantilever beam probe 8 is improved, and the detection precision of the cantilever beam probe 8 is improved. It can be seen that the method of the present invention for manufacturing the cantilever probe 8 is simple and effective, does not employ chemical etching and sputtering techniques, eliminates the cost of purchasing expensive test equipment, and is simple in manufacturing process, which is beneficial to the industrial manufacture of the cantilever probe 8, and corresponds to the currently proposed green ecological manufacturing technique.
In step S2, the height of each hole 2 is H, the diameter of each hole 2 is D, and the distance between the central axes of two adjacent holes 2 is Ds; the height H of the hole 2 is smaller than the thickness of the silicon substrate 1; the distance Ds between the central axes of two adjacent holes 2 is equal to the diameter D of the hole 2. The length and the width of the silicon substrate 1 are in the order of micrometers, the height of the silicon substrate 1 is in the order of nanometers, and the silicon substrate 1 in the order of nanometers is adopted, so that the microscope selected in the step S1 is a high-precision microscope to ensure that the silicon substrate 1 can be clearly seen under the high-precision microscope.
In step S3, the temperature for high temperature molding is 1150 ℃, and the silicon atom diffusion coefficient is the highest at this time, which is more favorable for molding the cavity 3.
In step S4, one end of the cantilever 6 is fixed to the cantilever holder 5, and the femtosecond laser 4 is irradiated at the center of the other end of the cantilever 6 to form the probe 7. The energy power F and the irradiation power P of the femtosecond laser 4 can be adjusted to ensure that the end part of the cantilever beam 6 forms a corresponding probe 7, the irradiation power P of the femtosecond laser 4 is tried for multiple times, from 25mW to 75mW, the trial is carried out at the adjustment interval of 5mW every time, and the irradiation time of the femtosecond laser 4 is determined to be 10 seconds every time, so that the stability of silicon substrate surface shape forming is ensured, and the forming effect of the femtosecond laser at 75mW is optimal theoretically.
Example two:
referring to fig. 5, the present invention further provides a cantilever probe 8, and by using the preparation method according to the first embodiment, the cavity 3 is contained in the cantilever 6 of the cantilever probe 8, so that the resonant frequency of the cantilever probe 8 is increased, and the detection accuracy of the cantilever probe 8 is increased.
Referring to fig. 6, the cantilever probe 8 of the present invention operates according to the following principle: laser emitter 9 sends laser to cantilever beam probe 8, laser shines photoelectric detector 10 after the reflection, because when cantilever beam probe 8 contacts the object 11 that awaits measuring, probe 7 will produce slight deformation, consequently, the amount of deflection of cantilever beam 6 also can take place a little deformation, the beam of shining photoelectric detector 10 through the reflection at this moment has produced the offset, thereby just can deduce the elastic deformation delta x of cantilever beam 6, can directly find effort F between probe 7 and the object 11 that awaits measuring according to the elastic coefficient k of silicon substrate 1 and hooke's law F ═ k Δ x at last, the change according to effort F alright indirect acquisition object 11 surface morphology that awaits measuring.
The above-mentioned embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solutions of the present invention by those skilled in the art should fall within the protection scope of the present invention without departing from the design spirit of the present invention.
Claims (10)
1. A method for forming a cantilever probe based on femtosecond laser and high temperature is characterized by comprising the following steps:
s1, placing the silicon substrate with the size of micro-nano order under a microscope;
s2, performing ion etching on the surface of the silicon substrate to form a plurality of holes;
s3, performing high-temperature forming on the silicon substrate subjected to the ion etching to form a cavity in the silicon substrate, and obtaining a cantilever beam with the cavity in the silicon substrate;
and S4, fixing one end of the cantilever beam with the cavity inside, adjusting the performance parameters of the femtosecond laser, and molding the probe at the other end of the cantilever beam by using the femtosecond laser.
2. The method of claim 1, wherein in step S4, the femtosecond laser is irradiated at the center of the other end of the cantilever to form the probe.
3. The method of claim 1, wherein the length and width of the silicon substrate are on the order of microns.
4. The method of claim 1, wherein the height of the silicon substrate is in the order of nanometers.
5. The method for forming a cantilever probe based on femtosecond laser and high temperature according to claim 1, wherein in step S2, the height of the hole is H, the diameter of the hole is D, and the distance between the central axes of two adjacent holes is Ds; the height H of the hole is smaller than the thickness of the silicon substrate; the distance Ds between the central axes of two adjacent holes is equal to the diameter D of the hole.
6. The method for femtosecond laser and high-temperature-based formation of the cantilever probe according to claim 1, wherein the temperature for high-temperature formation is 1150 ℃ in step S3.
7. The method of claim 1, wherein in step S4, the energy power and the irradiation power of the femtosecond laser can be adjusted to ensure that the end of the cantilever is shaped into a corresponding probe.
8. The method of claim 7, wherein the femtosecond laser irradiation time is 10s after each adjustment.
9. The method of claim 7, wherein the femtosecond laser irradiation power is 75 mW.
10. A cantilever probe formed by the method of any one of claims 1 to 9, wherein the cantilever contains a cavity therein.
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| CN202010692685.6A CN111825056A (en) | 2020-07-17 | 2020-07-17 | Method for forming cantilever probe based on femtosecond laser and high temperature and cantilever probe |
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| CN202010692685.6A CN111825056A (en) | 2020-07-17 | 2020-07-17 | Method for forming cantilever probe based on femtosecond laser and high temperature and cantilever probe |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113311195A (en) * | 2021-05-17 | 2021-08-27 | 浙江工商大学 | Forming method of micro-cantilever probe based on coupling effect of electric field and femtosecond laser |
| CN113427783A (en) * | 2021-06-16 | 2021-09-24 | 杭州电子科技大学 | Method for preparing PMMA (polymethyl methacrylate) internal micro-channel under high-temperature action |
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| CN113427783A (en) * | 2021-06-16 | 2021-09-24 | 杭州电子科技大学 | Method for preparing PMMA (polymethyl methacrylate) internal micro-channel under high-temperature action |
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