TWI399544B - Contactors for electrical testing and methods for their manufacture - Google Patents

Description

Contactor for electrical test and manufacturing method thereof

The present invention relates to a contact used in electrical testing of a semiconductor element such as a semiconductor integrated circuit and a method of manufacturing the same.

A flat-shaped semiconductor element such as an uncut integrated circuit formed on a semiconductor wafer or an integrated circuit cut from a semiconductor wafer is electrically tested to confirm whether it is manufactured according to specifications.

In such an electrical test, a plurality of probes each pressed against a pad electrode of a semiconductor element are used, that is, a probe card in which a contact is placed on a substrate such as a wiring board or a probe substrate. The probe card is mounted to the tester in such a manner that the pad electrode is electrically connected to the test device, that is, the circuit of the tester.

One of the contacts used in the probe card is a plate-like material (Patent Document 1), and includes a plate-like mounting portion that is attached to the substrate in a state in which the vertical direction is extended, and the lower end portion of the mounting portion is a plate-shaped arm portion extending from one side in the left-right direction, a plate-shaped pedestal portion projecting downward from the front end portion of the arm portion, and a plate projecting downward from the lower end portion of the pedestal portion and having a tip end at the lower end of the contact portion a contact or a columnar contact (ie, a contact to the pad electrode).

In the contact, the mounting portion, the arm portion, and the pedestal portion are formed into a plate-shaped contact sub-body by a conductive metal material. The contact sub-mount is attached to the substrate at the upper end of the mounting portion and supported on the substrate in a cantilever shape.

A probe card system in which a plurality of the above-mentioned contacts are disposed on a substrate is attached to the tester. Each of the contact sub-systems presses the tip of the probe against the pad electrode in a state where the probe card is attached to the tester, thereby causing an overdrive force to act on the contact.

Thereby, the contact sub-system is elastically deformed at the arm portion, and the oxide film on the surface of the pad electrode is scraped off with a needle tip. The action of scraping off the oxide film on the surface of the electrode by the tip of the needle depends on the respective semiconductor elements to be tested.

However, in such a contact, when the contact is subjected to an overdrive action as described above, a large load such as bending the contact portion around the portion on the arm side acts on the contact portion.

Therefore, since the pressing of the pad electrode is repeated, damage such as cracks, defects, and breakage occurs at the contact portion. Further, due to the offset of the tip position relative to the pad electrode, the tip of the needle is pressed to a portion other than the pad electrode or to the end of the pad electrode, so that a torsional force acts on the contact, especially on the contact portion. There are also many cases of damage to the contact parts. Thus, the contact with the damaged contact portion will eventually be broken and cannot be used.

In order to solve the above problems, a technique has been proposed (Patent Document 2) in which the tip of the needle is reinforced by the elastic deformation of the arm portion to reinforce the contact portion in the direction of the pad electrode (that is, the rubbing direction). Part. In addition, the inventors of the present invention have also invented a technique (Japanese Patent Application No. 2006-270543), which is a portion in which the torsion reinforcing and the rubbing direction are in a direction perpendicular to the contact portion.

However, in the contact type of the type described in Patent Document 1, when an overdrive force acts on the contact, a complicated force such as cracks, defects, breaks, and twists in the contact portion acts on the contact. Therefore, as in the technique of Patent Document 2 and the technique proposed, even if a technique capable of solving only the respective problems is applied to the contact of Patent Document 1 (the above-mentioned complicated force acts on the contact portion), the contact cannot be solved. A special topic of the child.

Patent Document 1: WO 2006/075408 A1

Patent Document 2: Japanese Laid-Open Patent Publication No. 2007-192719

SUMMARY OF THE INVENTION An object of the present invention is to prevent a break or a defect of a contact portion due to repeated application of an overdrive to perform a normal electrical test.

The contact for electrical testing according to the present invention includes: a plate-shaped contact sub-body having a mounting portion extending in the vertical direction, an arm extending from at least one of the lower end portions of the mounting portion toward the left-right direction, and an arm extending from the arm a pedestal portion that protrudes downward from a front end portion; a contact portion protrudes downward from an lower end portion of the pedestal portion, and a lower end of the contact portion abuts a tip of the electrode of the semiconductor element; and the reinforcing portion is disposed The contact portion and the vicinity of at least the boundary portion of the pedestal portion. The reinforcing portion is formed of a metal material different from the contact sub-body and having a higher toughness than the contact portion.

The reinforcing portion may include a film covering all of the surface regions except the tip of the pedestal portion to the contact portion.

The metal material forming the reinforcing portion may include an alloy containing at least two metal elements.

The reinforcing portion may include at least two metal material layers laminated.

The method for producing a contact for electrical testing according to the present invention can be applied to an electrical test contactor having a plate-shaped contact sub-body and a contact portion protruding from the contact sub-body and having a tip end as a tip.

The manufacturing method comprises the following steps.

In the first step, at least a first photoresist layer having a first recess in the contact portion is formed on the base member, and a sacrificial layer is formed in the first recess by deposition of a suitable material.

In the second step, after the first photoresist layer is removed, a second photoresist layer having a second recess in which the contact portion and the contact body portion in the vicinity of the contact portion are formed is formed on the base member. And forming a first reinforcing layer in the second recess by depositing a conductive material having a toughness higher than the contact portion, and further having conductivity higher than hardness of the first reinforcing layer The deposition of the material forms the contact portion in the second recess.

In a third step, the second photoresist layer is removed, and a third photoresist layer having a third recess in the main body of the contact is formed on the base member, and is different from the first reinforcing layer. The toughness is higher than the deposition of the conductive material of the contact portion, and the contact body is formed in the third recess.

In the fourth step, after removing the third photoresist layer, a fourth photoresist layer having a fourth recess in the portion of the contact portion adjacent to the contact portion and the contact portion is formed on the base member. And forming a second reinforcing layer in the fourth recess by depositing a conductive material having a toughness higher than the contact portion and different from the probe body.

In the fifth step, the contact member including the first reinforcing layer, the contact portion, the contact sub-body, and the second reinforcing layer is separated from the base member.

In the above manufacturing method, the deposition of the material to the respective recesses may be formed by at least one selected from the group consisting of a plating technique, a sputtering technique, and a vapor deposition technique.

If the reinforcing portion is formed of a metal material different from the contact sub-body and having a higher toughness than the contact portion, the irregular force of the contact portion generated by the twisting other than the rubbing direction and acting on the contact three-dimensionally becomes It is soft and makes the contact parts less susceptible to damage and breakage.

When the reinforcing portion includes a film covering all of the surface regions except the lower end portion of the pedestal portion and the contact portion, the contact portion becomes softer and less likely to be damaged or broken.

Hereinafter, the embodiment will be described.

[Definition of terms]

In the present invention, in FIG. 2, the direction in which the side of the mounting portion and the side of the needle tip are respectively above and below is referred to as the vertical direction, and the front end side and the base end side of the arm portion of the contact portion are respectively left. The directions of the square and the right are referred to as the left-right direction, and the paper back direction (the thickness direction of the contact) orthogonal to the vertical direction and the left-right direction is referred to as the front-rear direction.

However, these directions differ depending on the posture of the substrate in a state in which the substrate on which the plurality of contacts are disposed is mounted on the tester. Therefore, for example, in the upper and lower directions referred to in the present invention, in a state where the substrate on which a plurality of contacts are disposed is attached to the tester, the state may be reversed or inverted, or may be in an oblique state.

[Examples of electrical connection devices and contacts]

Referring to Fig. 1, the electrical connection device 10 is used as a semiconductor element 12 in a flat object to be inspected such as an integrated circuit formed on a semiconductor wafer, and in order to confirm whether or not the semiconductor element 12 is an electrical test manufactured according to the specification, It is used to electrically connect the pad electrode of the semiconductor component 12 to the tester.

In the illustrated example, the semiconductor element 12 is not cut off in the semiconductor wafer, but the semiconductor element may be cut. In the electrical test using the electrical connection device 10, a plurality of semiconductor components 12 are simultaneously electrically tested.

The electrical connection device 10 includes a probe card 16 having a plurality of contacts 14 for electrical testing, a top 18 of the chuck that receives the semiconductor element 12 thereon, and a top portion 18 of the chuck at least in the front-rear direction, the left-right direction, and the upper and lower sides. The inspection stage 20 that moves three-dimensionally in three directions and the area sensor 22 that is disposed on the inspection stage 20 to photograph at least one contact 14 is used.

As shown in FIG. 2, each of the contact members 14 includes a plate-like mounting portion 24 that extends in the vertical direction, a plate-like arm portion 26 that extends from one of the lower end portions of the mounting portion 24 toward the left-right direction, and the arm portion 26 A plate-like pedestal portion 28 projecting downward from the front end portion and a plate-like or columnar contact portion 30 projecting downward from the lower end of the pedestal portion 28.

The mounting portion 24 has a plate-like mounting region 24a integrally attached to the substrate described later at the upper end portion, and a plate-like elongated region 24b extending downward from the lower end portion of the mounting region 24a.

The arm portion 26 includes plate-shaped first and second arms 32 and 34 extending in the left-right direction at intervals in the vertical direction, and front and rear portions of the first and second arms 32 and 34. The plate-shaped first and second connecting portions 36 and 38 are not connected.

Further, the arm portion 26 is integrally connected to the lower end portion of the attachment portion 24 (actually, the extension region 24b), and the arm portion 26 is supported by the attachment portion 24 by the second connection portion 38 located on the proximal end side so that the second portion 1 and the second arms 32 and 34 extend from one lower end portion of the attachment portion 24 to one side in the left-right direction.

In the pedestal portion 28, the pedestal portion 28 extends to the lower side of the front end portion of the second arm 34 in the left-right direction and the lower portion, and is integrally connected to the lower edge portion of the front end side and the lower edge portion of the first connecting portion 36. The pedestal portion 28 forms a plate-shaped contact sub-body together with the mounting portion 24 and the arm portion 26.

The mounting portion 24, the arm portion 26, and the pedestal portion 28 which collectively form the contact sub-body are provided in the shape of a plate having substantially the same uniform thickness dimension in the front-rear direction. Therefore, the contact 14 is provided in a plate shape as a whole.

As shown in FIGS. 3 to 5, when the contact portion 30 is viewed from below, the lower surface portion around the contact portion 30 of the pedestal portion 28 has six faces 44a, 44b, 44c, 44d, 44e and around the contact portion 30. 44f.

The six faces 44a, 44b, 44c, 44d, 44e, and 44f are inclined with respect to the horizontal plane (the imaginary axis 48 extending in the up-and-down direction through the center of the contact portion 30) so that the lower portion becomes the side of the contact portion 30, Also, the portion closer to the side of the contact portion 30 is lower.

Among the six faces, the two inclined faces 44a and 44b are located on one side and the other side in the left-right direction with respect to the contact portion 30, respectively. The other two inclined surfaces 44c and 44d are located on one side in the left-right direction with respect to the contact portion 30, and are located on one side and the other side in the front-rear direction. The other two inclined surfaces 44e and 44f are respectively located on the other side in the left-right direction with respect to the contact portion 30, and are located on one side and the other side in the front-rear direction.

As shown in FIGS. 3 to 5, the contact portion 30 has a shape in which the lower end thereof is pressed against the flat needle tip 30a of the electrode of the semiconductor element 12, and has a shape in which the front and rear directions are the thickness direction. The thickness of the contact portion 30 in the front-rear direction is smaller than the other portions in the same direction, in particular, the thickness of the contact sub-body.

When the contact portion 30 is viewed from the front-rear direction, the contact portion 30 has a shape similar to an isosceles triangle. Therefore, similarly to the pedestal portion 28, when the contact portion 30 is viewed from below the needle tip 30a, the contact portion 30 includes at least four faces 46a, 46b, 46c, and 46d that form the outer peripheral surface of the contact portion 30.

The two faces 46a and 46b are respectively located on the left and right sides with respect to the axis 48, and are disposed to be inclined with respect to the horizontal plane (and the axis 48) so that the portion on the side of the axis 48 is lower, that is, the more The portion on the lower side is the side of the axis 48. The other two faces 46c and 46d are respectively located forward and rearward with respect to the axis 48, and are provided as vertical faces extending in the up and down direction.

On the other hand, the lower end surface of the contact portion 30, that is, the needle tip 30a is provided at a flat surface at right angles to the axis 48 to be pressed against the electrode of the semiconductor element 12.

Faces 44a and 44b, 44c and 44d, 44e and 44f, 44c and 44e, 44d And 44f, 46a and 46b, and 46c and 46d, respectively, may be formed symmetrically or asymmetrically. That is, the faces may also have different angles relative to each other with respect to the horizontal plane and axis 48.

As shown in FIGS. 3 to 7, the contact 14 also includes a reinforcing portion 40 disposed in the vicinity of the boundary portion between the contact portion 30 and the pedestal portion 28. The reinforcing portion 40 is formed of a metal material different from the contact sub-body and having a toughness higher than that of the material of the contact portion 30.

In FIGS. 3 to 5, the reinforcing portion 40 is indicated by a hatched area of a broken line. On the other hand, in FIG. 6 which is a cross-sectional view taken along line 6-6 of FIG. 4, the reinforcing portion 40 is indicated by a region obliquely to the lower right.

The reinforcing portion 40 is formed by coating the above-described metal material so as to be covered from the lower end portion of the pedestal portion 28 to the contact portion 30 and all the surface regions except the needle tip 30a.

That is, in the illustrated example, the reinforcing portion 40 is provided with all of the remaining surface regions of the contact portion 30 other than the needle tip 30a and all surface regions of the pedestal portion 28 at the contact portion 30 side.

However, the reinforcing portion 40 of at least a part of the faces 44a, 44b, 44c, 44d, 44e and 44f of the pedestal portion 28 may be omitted.

Examples of the material of the other portion of the contact 14 other than the reinforcing portion 40 include nickel (Ni), nickel/phosphorus alloy (Ni-P), nickel/tungsten alloy (Ni-W), rhodium (Rh), phosphor bronze, and palladium. Conductive metal materials such as cobalt/cobalt alloy (Pd-Co) and palladium/nickel/cobalt alloy (Pd-Ni-Co).

The other parts of the contact 14 other than the reinforcing portion 40 may be made of the above materials. However, the contact portion 30 can also be at least different The material of the pedestal portion 28 is made of a material having a hardness higher than that of the pedestal portion 28. In the latter case, the pedestal portion 28 may be made of the same material as the arms 32, 34, the two connecting portions 36, 38, the mounting region 24a, and the extended region 24b, or may be made of different materials.

In the illustrated example, the contact portion 30 is made of a material having a hardness higher than that of the pedestal portion 28. Therefore, the contact portion 30 is firmly held by the pedestal portion 28 by a joint portion (not shown) made of the same conductive metal material as the contact portion 30. A part of the joint portion is buried in a state of being exposed to one side of the front seat portion 28 in the front and rear directions.

When the entire portion of the contact portion 14 other than the reinforcing portion 40 is made of the same material, or a portion other than the contact portion 30 and the reinforcing portion 40 is formed of the same material, the contact 14 can be easily manufactured.

The material of the reinforcing portion 40 is a metal material that is different from the other portions of the contact portion 14 other than the reinforcing portion 40, particularly at least different from the material of the material of the contact sub-body, and has a higher toughness than the contact portion 30.

For example, when the pedestal portion 28 is made of nickel and the contact portion 30 is made of tantalum or tungsten, the material of the reinforcing portion 40 is made of a metal material other than nickel and has a toughness higher than that of tantalum or tungsten.

The contact 14 can be manufactured by performing exposure and development of a plurality of photoresists or a method of depositing a conductive material on a recess formed by development.

Each of the contact members 14 is attached to the upper surface of the mounting portion 24, and is attached to the flat conductive portion formed under the probe card 16 in a cantilever manner by soldering or the like (in the illustrated example, the mounting pad described below) ).

As shown in FIG. 1, the probe card 16 includes a wiring substrate 50 made of an electrical insulating material such as glass-impregnated epoxy resin, a ceramic substrate 52 mounted on the lower surface of the wiring substrate 50, and a probe mounted on the lower surface of the ceramic substrate 52. The needle substrate 54 and the reinforcing plate 56 attached to the upper surface of the wiring substrate 50.

The wiring substrate 50 and the ceramic substrate 52 have a plurality of internal wirings electrically connected to each other. The wiring board 50 also has a plurality of connection terminals such as a tester pad electrically connected to a tester (not shown) on the outer peripheral portion of the upper surface. Each of the connection terminals is electrically connected to the internal wiring of the wiring substrate 50.

The probe substrate 54 is provided as a multilayer substrate having a plurality of internal wirings electrically connected to the internal wiring of the ceramic substrate 52 in a plurality of layers, and has a plurality of mounting electrodes electrically connected to the internal wirings in a one-to-one manner on the lower surface. pad. Each contact 14 is mounted to a mounting pad.

The reinforcing plate 56 is made of a metal material such as stainless steel, and together with the ceramic substrate 52 prevents the wiring substrate 50 from being bent.

The top portion 18 of the chuck maintains the semiconductor element 12 in a vacuum-adsorbable manner and cannot be moved. The inspection stage 20 is provided as a three-dimensional moving mechanism, and the chuck top 18 is moved in three directions of the front-rear direction, the left-right direction, and the up-and-down direction, and is provided with an angle rotation around the axis of the chuck top 18 extending in the up-and-down direction. θ moving mechanism.

As shown in Figure 1, the area sensor 22 concentrates the light ray 58 to point to the tip 30a of the particular contact 14 to illuminate the tip 30a and its vicinity and to receive reflected light from the tip 30a and its vicinity for conversion. Into the electrical signal. The output signal of the area sensor 22 is supplied to an image processing apparatus for determining the coordinate position of the particular contact 14.

In the illustrated example, the angle of opening of the light ray 58 with respect to the optical axis is less than the angle of inclination of the inclined faces 44a, 44b, 44c, 44d, 44e and 44f of the pedestal portion 28 with respect to the horizontal plane. However, such an opening angle may be the same as the inclination angle of the inclined faces 44a, 44b, 44c, 44d, 44e, and 44f of the pedestal portion 28, or may be large.

In the electrical connecting device 10, the light ray 58 that is irradiated from the lower side of the contact portion 14 to the tip end region 26 is reflected on the outer surface of the contact portion 30 and the inclined surface of the pedestal portion 28, and is incident on the area sensor 22. The output signal of the area sensor 22 is image processed and used to determine the coordinate position of the tip 30a relative to the semiconductor component 12 or the tester.

The plurality of contacts 14 are disposed on the probe card 16 of the probe substrate 54 in the above manner, and are mounted on a tester including the chuck top 18, the inspection stage 20, and the area sensor 22. Each contact 14 presses the tip 30a against the pad electrode in a state where the probe card 16 is attached to the tester, whereby the overdrive force acts on the contact.

Thereby, the contact 14 is elastically deformed at the arm portion 26, and the oxide film on the surface of the pad electrode is scraped off by the tip 30a. The action of scraping off the oxide film on the surface of the electrode by the tip 30a is repeated for each of the semiconductor elements 12 to be tested.

However, in the contact member 14, since the reinforcing portion 40 is formed of a metal material different from the contact sub-body and having a higher toughness than the contact portion 30, the contact portion 30 is generated by twisting other than the rubbing direction. The irregular force acting on the contact member 14 in three dimensions becomes soft, and the contact portion 30 is less likely to be damaged or broken.

Further, since the reinforcing portion 40 is covered from the lower end portion of the pedestal portion 28 to the surface region of the contact portion 30 and all the surface regions except the needle tip 30a, the contact portion 30 becomes softer and less susceptible to irregular force. And damage.

Although the pedestal portion 28 and the contact portion 30 of the contact member 14 have a complicated structure, it is also possible to use a lithography technique using an exposure technique, and deposition of a conductive metal material using an electroplating technique, a sputtering technique, and an evaporation technique. Technology to make.

[Example of Manufacturing Method of Contact Member]

Hereinafter, an embodiment of a method of manufacturing the contact 14 will be described with reference to FIGS. 7 to 8. 7 to 8 are cross-sectional views showing the contact 14 viewed from the left along the axis 48 of Fig. 6.

First, as shown in Fig. 7(A), nickel (Ni) and copper (Cu) are sputter-coated on the surface of a plate-like base member 60 made of tantalum or stainless steel to form a contact for easy fabrication. Peeled thin peeling layer (not shown).

Next, as shown in FIG. 7(B), the photoresist 62 is coated on the base member 60 (actually, the peeling layer) to form a layer.

Next, as shown in FIG. 7(C), the photoresist 62 is exposed in a state of covering the photomask, and then subjected to development processing, wherein the photomask is used to form at least the recess 64 of the contact portion 30. In the photoresist 62.

Next, as shown in FIG. 7(D), a sacrificial layer 66 having a predetermined thickness dimension is formed in the recess 64 by a deposition technique such as plating, sputtering, or vapor deposition.

Next, as shown in FIG. 7(E), after the photoresist 62 is removed, the photoresist 68 is applied to the base member 60 and the sacrificial layer 66 to form a layer.

Next, as shown in FIG. 7(F), the photoresist 68 is exposed while the photomask is covered with the photoresist 68, and then subjected to development processing. Thereby, the recess 70 That is, it is formed on the photoresist 68.

Next, as shown in FIG. 8(A), the crank-shaped first reinforcing layer 74 having a shape similar to the shape of the distal end portion 72 is formed into a crank shape in the recess 70 by a deposition technique such as plating, sputtering, or vapor deposition. The first reinforcing layer 74 is formed into a layered shape by using the above-described conductive metal material.

The deposition technique for forming the first reinforcing layer 74 is a metal material which is more excellent in toughness than the material used in the contact portion 30 such as platinum or nickel and which is different from the contact sub-body. However, the first reinforcing layer 74 may be a metal material layer of two or more layers in which a plurality of metal materials each having the above characteristics are laminated.

Next, as shown in FIG. 8(B), the tip end portion 72 is formed on the first reinforcing layer 74 in the recess 70 by a deposition technique such as plating, sputtering, or vapor deposition. The distal end portion 72 is formed in a crank shape similar to the first reinforcing layer 74 by using a high-hardness conductive metal material such as rhodium (Rh) or tungsten (W).

As shown in Fig. 8(B), the recess 70 follows the front end portion 72 of the contact member 14. The distal end portion 72 is a portion 72a where the contact portion 30 is formed, and a portion 72b that forms one portion of the pedestal portion 28 and is integrally connected to the contact portion 30 and joined to the rest of the pedestal portion 28, and corresponds to an arrangement region of one portion of the reinforcing portion 40.

Next, as shown in FIG. 8(C), after the photoresist 68 is removed, the photoresist 75 is applied to the base member 60, the sacrificial layer 66, and the tip end portion 72 to form a layer.

Next, as shown in FIG. 8(D), the photoresist 75 is exposed while the photomask is covered with the photoresist 75, and then subjected to development processing. Thereby, the recess 76 is formed in the manner of the contact sub-body, that is, formed on the photoresist 75.

Next, as shown in FIG. 8(E), the body portion 80 of the contact sub-body is formed in a recess 76 by a deposition technique such as electroplating, sputtering, vapor deposition, etc., wherein the contact sub-body includes and the front end portion. The portion 72b of 72 has a portion where the pedestal portion 28 functions.

The main body portion 80 is made of nickel/phosphorus alloy (Ni-P), nickel/tungsten alloy (Ni-W), rhodium (Rh), phosphor bronze, nickel (Ni), palladium/cobalt alloy (Pd-Co), and palladium. A toughness such as a nickel/cobalt alloy (Pd-Ni-Co) is formed of a conductive metal material superior to the contact portion 30.

Next, as shown in FIG. 9(A), after the photoresist 75 is removed, the photoresist 82 is applied to the base member 60, the sacrificial layer 66, the tip end portion 72, and the body portion 80 to form a layer. .

Next, as shown in FIG. 9(B), the photoresist 82 is subjected to exposure and then subjected to development processing. Thereby, the recess 84 is formed in the photoresist 82. Similarly to the recess 70 shown in Figs. 8(A) and (B), the recess 84 follows the front end portion 72 of the contact member 14.

Next, as shown in FIG. 9(C), the crank-shaped second reinforcing layer 86 having a substantially symmetrical shape with the first reinforcing layer 74 is formed in the recess 84 by a deposition technique such as plating, sputtering, or vapor deposition. Crank-like. The second reinforcing layer 86 is formed of a conductive metal material such as the first reinforcing layer 74 and formed into a layer.

Similarly to the first reinforcing layer 74, the deposition technique for forming the second reinforcing layer 86 is a metal material which is more excellent in toughness than the material used in the contact portion 30 such as platinum or nickel and which is different from the contact sub-body. The second reinforcing layer 86 may be provided as a metal material layer of two or more layers in which a plurality of metal materials are laminated.

Next, as shown in FIG. 9(D), the photoresist 82 is removed.

Next, as shown in FIG. 9(E), the sacrificial layer 66 is removed by etching and the completed contact 14 is stripped from the base member 60.

As shown in FIG. 2 to FIG. 7, as a result of the above, the contact 14 including the reinforcing portion 40 can be manufactured, wherein the reinforcing portion 40 is formed from the lower end portion of the pedestal portion 28 to the contact portion 30 by a predetermined metal material. The surface region is formed by coating all of the surface regions except the needle tip 30a.

As described above, the reinforcing portion 40 manufactured in the above manner is provided in all of the remaining surface regions of the contact portion 30 except the needle tip 30a, and all surface regions on the side of the contact portion 30 in the pedestal portion 28.

The portion corresponding to the pedestal portion 28, the side surface of the contact portion 30 in the left-right direction, and the reinforcing portion 40 of the pedestal portion 28 downward may be corresponding to the recess 84 in the steps of FIGS. 9(B) and (C), for example. The size of the portion is larger than the size of the portion corresponding to the contact 14 by the thickness of the second reinforcing layer 86, and is formed by depositing a predetermined metal material in the recess 84.

As shown in FIG. 9(C) to FIG. 9(E), in the contactor manufactured by the above method, at least the portion of the second reinforcing layer 86 opposite to the first reinforcing layer 74 is from the body portion 80. protruding.

The arm portion 26 can also have a single arm 32 or 34. At this time, the connecting portions 36, 38 may be omitted, and the contact portion 30 may be integrally formed with the front end side on the front end side of the arm 32 or 34, and the extended portion 24b may be integrally formed on the rear end side of the arm 32 or 34.

The reinforcing portion 40 may be disposed on both surfaces of the rubbing direction at right angles to both surfaces in the thickness direction of the vicinity of at least the boundary portion of the contact portion 30 and the pedestal portion 28 at least in the form of a double film. Such a film can be formed by performing at least two lithography techniques and deposition techniques on both sides of the rubbing direction.

The present invention can be used not only for electrical testing of electronic components such as uncut integrated circuits formed on semiconductor wafers, but also for electrical testing of electronic components such as integrated circuits that have been cut.

The present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit and scope of the invention.

10. . . Electrical connection device

12. . . Semiconductor component (inspected body)

14. . . Contactor

16. . . Probe card

18. . . Chuck top

20. . . Checking the stage

twenty two. . . Area sensor

twenty four. . . Installation department

26. . . Arm

28. . . Pedestal

30. . . Contact

30a. . . Tip

40. . . Reinforcement department

Fig. 1 shows an embodiment of an electrical connecting device of the present invention.

Figure 2 is a front elevational view showing one embodiment of a contact of the present invention.

Figure 3 is a front elevational view showing the front end portion 3 of the contact shown in Figure 2 in an enlarged manner.

Fig. 4 is a right side view of the front end portion shown in Fig. 3 as seen from the left side of Fig. 3.

Figure 5 is a bottom plan view of the front end portion shown in Figure 3.

Figure 6 is a cross-sectional view taken along line 6-6 of Figure 4.

7(A) to (F) are process diagrams for explaining a method of manufacturing a contact of the present invention.

8(A) to 8(E) are diagrams showing the steps of the seventh embodiment of the method for manufacturing the contact.

9(A) to 9(E) are diagrams for explaining the method of manufacturing the contactor, which is continued from Fig. 8;

28. . . Pedestal

30. . . Contact

40. . . Reinforcement department

44a, 44b, 44c, 44d, 44e, 44f. . . Inclined surface

46a, 46b, 46c, 46d. . . surface

48. . . Axis

Claims (6)

A contact for electrical testing, comprising: a plate-shaped contact sub-body, comprising: a mounting portion extending in a vertical direction; an arm extending from at least one of a lower end portion of the mounting portion toward a left-right direction; and an arm portion extending from the arm portion a pedestal portion that protrudes downward from the front end portion; a contact portion that protrudes downward from an lower end portion of the pedestal portion, and a tip end of the contact portion that abuts against an electrode of the semiconductor element; and a reinforcing portion that is disposed in the contact portion And a portion of the pedestal portion adjacent to at least a boundary portion; the reinforcing portion is formed of a metal material different from the contact sub-body and having a toughness higher than the contact portion. The contact of claim 1, wherein the reinforcing portion comprises a film covering all of the surface regions except the tip of the pedestal portion to the contact portion. The contact of claim 1 or 2, wherein the metal material forming the reinforcing portion comprises an alloy formed of at least two metal elements. The contact of claim 1 or 2, wherein the reinforcing portion comprises at least two metal material layers laminated. A method for manufacturing a contact for electrical testing for manufacturing an electrical test contact having a plate-shaped contact sub-body and a contact portion protruding from the contact sub-body and having a tip end as a tip, wherein: In one step, at least a first photoresist layer having a first recess exemplified by the contact portion is formed on the base member, and a sacrificial layer is formed in the first recess by deposition of a suitable material; After the first photoresist layer is removed, a second photoresist layer having a second recess in the vicinity of the contact portion and the contact body portion in the vicinity of the contact portion is formed on the base member. And forming a first reinforcing layer in the second recess by depositing a conductive material having a toughness higher than the contact portion, and further comprising a conductive material having a hardness higher than a hardness of the first reinforcing layer. Depositing, the contact portion is formed in the second recess; in the third step, the second photoresist layer is removed, and a third photoresist layer having a third recess resembling the contact body is formed on the base member Above, and by different from the first reinforcing layer, and the toughness is higher than the connection And depositing the conductive material in the third recess; and in the fourth step, after removing the third photoresist layer, the contact portion and the contact portion in the vicinity of the contact portion are patterned a fourth photoresist layer in the fourth recess of the body portion is formed on the base member, and is deposited by a deposition material having a toughness higher than the contact portion and different from the conductive material of the probe body The second reinforcing layer is formed in the fourth recess; and in the fifth step, the contact portion including the first reinforcing layer, the contact portion, the contact sub-body, and the second reinforcing layer is separated from the base member. The manufacturing method of claim 5, wherein the deposition of the material to the respective recesses is formed by at least one selected from the group consisting of a plating technique, a sputtering technique, and an evaporation technique.