JP2010038803A - Contact probe and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a contact probe and a method for manufacturing the same capable of stabilizing electric continuity between a contact probe and an object to be inspected. <P>SOLUTION: The contact probe 1 includes a beam portion 3 of a cantilever structure, one end of which is fixed on a substrate, and a contact portion 2 mounted on a surface facing the object 102 to be inspected positioned around a free end of the beam portion 3. A contact surface 21 of the contact portion 2 with the object 102 to be inspected is formed with a rough portion having mean average roughness (Ra) of 0.1 μm inclusive to 0.7 μm inclusive as surface roughness. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a contact probe including a beam portion having a cantilever structure, one end of which is fixed to a substrate, and a contact portion attached on a surface facing an object to be inspected in the vicinity of the free end of the beam portion, and its manufacture Regarding the method.

  In general, in the manufacturing process of a semiconductor device, an electrical characteristic test is performed on an electronic circuit formed on a semiconductor wafer. Such an electrical property test for an inspection object is performed using a probe card in which a plurality of contact probes (contact probes) that are brought into contact with an electrode pad on the inspection object to be conducted are formed on a substrate.

  The contact probe has a beam part of an elastically deformable cantilever structure in which one end is fixed to the substrate and the other end is a free end, and a contact part formed on the free end side of the beam part. (See, for example, Patent Document 1). The contact portion is formed of a columnar body projecting from the surface of the beam portion toward the inspection object, and the end surface of the columnar body is opposed to the electrode pad of the inspection object.

  When inspecting the electrical characteristics of the device on the semiconductor wafer, first, the contact portion of the contact probe is brought into contact with the electrode pad on the semiconductor wafer. In a state where the contact portion starts to contact the electrode pad, the entire end surface of the contact portion comes into contact with the surface of the electrode pad. After that, the contact part of the contact probe is further pressed against the semiconductor wafer side, and the overdrive is performed to elastically deform the beam part, so that the contact parts of all the contact probes are surely brought into contact with the electrode pads, respectively. Yes.

  That is, since the conventional contact portion is formed of a columnar body, the tip is a flat surface, and the tip surface is mirror-finished to increase the dimensional accuracy of the shape. Therefore, since the area of the tip surface of the contact portion is relatively large, the contact probe cannot obtain a stable contact state when the needle pressure on the electrode pad of the contact portion is small. Therefore, by performing the overdrive and elastically deforming the beam portion, the corner portion of the tip surface of the contact portion is brought into contact with the electrode pad, the contact area of the contact portion with the electrode pad is reduced, and the contact portion The pressing force to the electrode pad is increased to ensure contact.

In addition, an oxide film may be formed on the surface of the electrode pad. If the tip end surface of the contact portion is simply brought into contact with the electrode pad, the oxide film provides electrical connection between the contact portion and the electrode pad. I can't take it. Therefore, by performing overdrive, the tip end portion of the contact portion is bitten into the electrode pad while sliding the tip end surface of the contact portion with respect to the electrode pad, and the tip end corner portion of the contact portion touches the surface of the electrode pad. The formed oxide film is scrubbed and scraped off.
JP 2006-177836 A

  In general, it is desirable that the contact probe has a low contact resistance with the electrode pad and a good conductivity. For this purpose, it is important to increase the surface pressure of the contact portion that contacts the electrode pad of the contact portion by reducing the area of the contact portion, and to perform an effective scrubbing operation on the electrode pad. .

  However, since the tip surface of the contact portion is a flat surface, it is necessary to apply a relatively large needle pressure to bring the tip corner portion of the contact portion into pressure contact with the electrode pad in order to obtain a stable electrical resistance. . As a result, the amount of overdrive of the contact probe must be increased, and the amount of sliding of the contact portion is also increased. If the semiconductor device is further highly integrated and the electrode pad is reduced in area in the future, the amount of overdrive is limited, and there is a possibility that the electrode pad cannot be scrubbed in a contact probe that must increase the amount of overdrive.

  The present invention has been made in view of the above circumstances, and provides a contact probe that can stably establish electrical continuity between a contact probe and an inspection object even when the needle pressure is low, and a method for manufacturing the contact probe. The purpose is that.

  A contact probe according to a first aspect of the present invention comprises a beam portion having a cantilever structure in which one end is fixed to a substrate, and a contact portion attached on a surface facing an inspection object in the vicinity of the free end of the beam portion. And an unevenness having a surface roughness of arithmetic mean roughness (Ra) of 0.1 μm or more and 0.7 μm or less is formed on a contact surface of the contact portion to the inspection object.

  According to the contact probe of the present invention, unevenness having a surface roughness of arithmetic average roughness (Ra) of 0.1 μm or more and 0.7 μm or less is formed on a contact surface of the contact portion to the inspection object. Therefore, even when the contact portion is in contact with the object to be inspected and overdrive is performed, since the contact surface is uneven, it is not necessary to contact only the tip corner portion of the contact portion. The contact area can be reduced by bringing the projections of the projections and depressions into contact with the inspection object. As a result, even when the overdrive amount is reduced and the needle pressure is small, good contact between the contact portion and the inspection object can be obtained. Moreover, when the unevenness formed on the contact surface becomes a frictional resistance and a scrub operation is performed by overdrive, the oxide film formed on the surface of the inspection object can be scraped off by the unevenness, so that there is little. A stable contact state can be obtained even with an overdrive amount, and a stable electrical resistance can be obtained.

  In the case of the contact surface having irregularities whose surface roughness is less than the arithmetic average roughness (Ra) of 0.1 μm, the irregularities are too small. If the overdrive amount is not increased, the contact surface and the inspection object Electrical resistance due to contact with is not stable. In addition, in the case of the contact surface having irregularities whose surface roughness is an arithmetic average roughness (Ra) exceeding 0.7 μm, the irregularities are too large to obtain a stable contact state.

  According to a second aspect of the present invention, there is provided a contact probe manufacturing method comprising: a beam portion having a cantilever structure having one end fixed to a substrate; and a contact portion formed on a surface facing an object to be inspected in the vicinity of the free end of the beam portion. And a sacrificial layer having irregularities with a surface roughness of arithmetic average roughness (Ra) of 0.1 μm or more and 0.7 μm or less formed on a surface by laminating a conductive material. Thereafter, a first metal layer to be the contact portion is formed on the sacrificial layer by laminating, and a second metal layer to be the beam portion is laminated on the first metal layer so as to be partially continuous. By forming, the unevenness | corrugation whose surface roughness is arithmetic mean roughness (Ra) 0.1micrometer or more and 0.7 micrometer or less is formed in the contact surface to the said test object of the said contact part.

  According to the contact probe manufacturing method of the second aspect of the present invention, the sacrificial layer is formed with irregularities, the contact portion is formed on the sacrificial layer, and the beam portion is further formed on the contact portion. By forming a part of the contact probe, it is possible to easily form a contact probe having the contact portion in which irregularities are formed on the contact surface. Moreover, since the unevenness of the surface roughness is formed in the contact portion, good contact between the contact portion and the inspection object can be obtained even with a small needle pressure by reducing the overdrive amount. . Furthermore, by forming irregularities on the surface of the sacrificial layer having a surface area on which a plurality of contact probes can be arranged, a plurality of contact portions having irregularities can be simultaneously formed on the same sacrificial layer.

  In addition to the above method, the contact probe manufacturing method according to the third aspect of the present invention performs etching treatment on the surface of the sacrificial layer formed by laminating the conductive material, so that the surface roughness of the surface is reduced. Unevenness is formed. As described above, by forming irregularities on the surface of the sacrificial layer by etching, the irregularities can be easily formed on the sacrificial layer.

  According to a fourth method of manufacturing a contact probe according to the present invention, a conductive material is laminated to form a beam portion having a cantilever structure in which one end is fixed to a substrate, and then an inspection object near the free end of the beam portion. The contact probe is formed by laminating a conductive material on the surface opposite to the contact probe, and after the contact portion is formed, the contact surface of the contact portion to the inspection object is etched. By performing, the unevenness | corrugation whose surface roughness becomes arithmetic mean roughness (Ra) 0.1 micrometer or more and 0.7 micrometer or less is formed in the said contact surface.

  According to the contact probe manufacturing method of the fourth aspect of the present invention, after the beam portion and the contact portion are formed, the contact surface of the contact portion with the object to be inspected is etched to easily form irregularities. A contact portion having the contact surface can be formed. And the contact probe which can obtain favorable contact with the said test object can be formed easily.

  According to a fifth aspect of the present invention, there is provided a method for manufacturing a contact probe, comprising: stacking a conductive material to form a beam portion having a cantilever structure in which one end is fixed to a substrate; The contact probe is formed by laminating a conductive material on the surface facing the electrode, and the contact portion is formed by controlling the magnitude of the current density and the amount of additive in the plating solution. By forming the contact portion by electroplating, the surface roughness of the plating growth surface, which is the contact surface of the contact portion with the inspection object, is an arithmetic average roughness (Ra) of 0.1 μm to 0.7 μm. Asperities are formed.

  According to the contact probe manufacturing method of the fifth aspect of the present invention, it is possible to perform etching only by forming the beam portion and the contact portion by electroplating by controlling the magnitude of the current density and the amount of the additive in the plating solution. The unevenness can be formed on the contact surface of the contact portion without post-processing such as processing. As a result, it is possible to form a contact portion having irregularities on the contact surface without increasing the number of manufacturing steps. And the contact probe which can obtain favorable contact with the said test object can be formed easily.

  In a contact probe manufacturing method according to a sixth aspect of the present invention, a conductive material is laminated to form a beam portion having a cantilever structure in which one end is fixed to a substrate, and then an inspection object near the free end of the beam portion. Manufacturing method of a contact probe in which a conductive material is laminated on a surface opposite to a surface to form a contact portion, and after the contact portion is formed, a contact surface of the contact portion to the inspection object is electropolished As a result, irregularities having a surface roughness of arithmetic mean roughness (Ra) of 0.1 μm or more and 0.7 μm or less are formed on the contact surface.

  According to the contact probe manufacturing method of the sixth aspect of the present invention, after forming the beam portion and the contact portion, the contact surface to the object to be inspected in the contact portion is electropolished to easily form the unevenness. In addition, a contact portion having the contact surface can be formed. And the contact probe which can obtain favorable contact with the said test object can be formed easily.

  According to the contact probe of the present invention, the contact portion can be reliably brought into contact with the inspection object even with a small overdrive amount of the contact probe having a cantilever structure. Further, according to the contact probe manufacturing method of the present invention, it is possible to easily manufacture a contact probe having a cantilever structure capable of reliably bringing the contact portion into contact with an inspection object even with a small overdrive amount. .

Embodiment 1.
Hereinafter, a first embodiment of a contact probe and a manufacturing method thereof according to the present invention having an unevenness on an end face of a contact portion will be described with reference to the drawings.

[Probe device]
FIG. 1 is a diagram showing an example of a schematic configuration of a probe apparatus 100 including a probe card 110 according to an embodiment of the present invention, and shows an internal state of the probe apparatus 100. The probe device 100 includes a probe card 110, a movable stage 103 on which an inspection object 102 is placed, a driving device 104 that raises and lowers the movable stage 103, and a housing 105 that houses the movable stage 103 and the driving device 104. It consists of.

  The inspection object 102 includes a semiconductor device such as a semiconductor wafer, and a plurality of electronic circuits (not shown) are formed. The movable stage 103 is a mounting table having a horizontal mounting surface, and is moved up or down in the vertical direction while the inspection object 102 is mounted on the mounting surface by driving of the driving device 104. The housing 105 has an opening at the upper center portion, and the probe card 110 is attached so as to seal the opening. The movable stage 103 is disposed below the opening.

[Probe card]
FIGS. 2A and 2B are diagrams showing a configuration example of the probe card 110 in the probe apparatus 100 of FIG. 1, and FIG. 2A shows the inspection object 102 side (the lower side of FIG. 1). (B) in the figure is a side view.

  The probe card 110 includes a main board 106 attached to the opening of the housing 105, a rectangular probe board 107 held on the main board 106, and a plurality of contact probes 1 fixed on the probe board 107. ing.

  The main board 106 is a disk-shaped printed board, and has an external terminal 161 for performing signal input / output with the tester device. For example, a multilayer printed circuit board mainly composed of glass epoxy is used as the main board 106. The peripheral portion of the main substrate 106 is held at the periphery of the opening of the housing 105 and is supported horizontally.

  The probe substrate 107 is disposed below the main substrate 106 and supported by the main substrate 106. Further, the probe board 107 is electrically connected to the connecting member 108, and is configured to connect the connecting member 108 to the connector 162 of the main board 106. The probe substrate 107 has a rectangular shape smaller than the main substrate 106, and a wiring pattern is formed on the substrate. The wiring pattern is formed by wiring patterns of a power supply line, a ground line, and a signal line. When the inspection object 102 is made of a silicon wafer, the probe substrate 107 is preferably composed of a single crystal substrate such as silicon. In this way, by configuring the probe substrate 107 with a silicon substrate, the thermal expansion state between the probe substrate 107 and the inspection object 102 can be made closer.

  The connecting member 108 connects the main board 106 and the probe board 107 and conducts the wiring formed on the main board 106 and the probe board 107 as conductive lines. Here, a flexible printed circuit board (FPC) in which a wiring pattern is printed on a flexible film containing polyimide as a main component is used as the connecting member 108. One end of the flexible substrate is fixed to the peripheral portion of the probe substrate 107, and the other end is connected to the main substrate 106 via a detachable connector 162.

  In the present embodiment, a large number of electrode pads are formed on the probe substrate 107, and the contact probes 1 are bonded to the respective electrode pads, whereby a large number of contact probes 1 are formed on the probe substrate 107. As described above, the probe board 107 is electrically connected to the main board 106 connected to the tester device via the connecting member 108 and constitutes a probe card together with the main board 106. At the time of inspection, the movable stage 103 is raised by the driving device 104 and the contact probe 1 is brought into contact with the semiconductor wafer, so that signals are input / output between the tester device and the semiconductor wafer via each contact probe 1, An inspection of the electrical characteristics of the semiconductor wafer is performed.

〔Contact probe〕
As shown in FIGS. 1 and 2, the contact probe 1 is a probe (probe) that is elastically brought into contact with a fine electrode pad 121 formed on the inspection object 102. Each contact probe 1 is aligned and fixed on one main surface of the probe substrate 107. Each contact probe 1 is opposed to the inspection object 102 arranged on the movable stage 103 by arranging the main surface of the probe substrate 107 to which each contact probe 1 is fixed facing downward in the vertical direction. .

  FIG. 3 is a side view of the contact probe 1. The contact probe 1 includes a contact portion 2 that makes contact with the electrode pad 121 on the inspection object 102, and a beam portion 3 that has one end fixed to the probe substrate 107 and the other end protruding from the contact portion 2. The

  The beam portion 3 is formed of a cantilever (cantilever) whose one end is fixed to the probe substrate 107. That is, the beam portion 3 includes a substrate fixing portion 31 fixed to the probe substrate 107 and an elastic deformation portion 32 formed continuously with the substrate fixing portion 31. The elastic deformation portion 32 extends in parallel to the probe substrate 107 from the substrate fixing portion 31.

  The beam portion 3 has a substrate fixing portion 31 as a fixed end, and the other end side of the elastic deformation portion 32 with respect to the fixed end is a free end. A load is applied to the free end of the elastic deformation portion 32 from the inspection object 102 side. Thus, the elastic deformation portion 32 can be elastically deformed. In the present embodiment, the movable stage 103 is raised toward the probe card 110 and the free end portion of the beam portion 3 is pressed by the inspection object 102 to elastically deform the elastic deformation portion 32 of the beam portion 3. be able to.

  The contact portion 2 is configured by a contact chip formed so as to protrude on the surface of the free end portion of the beam portion 3 that faces the inspection object 102. This contact chip is formed of a columnar body having a pentagonal shape in plan view. A surface of the contact portion 2 that faces the inspection object 102 is a contact surface 21 that contacts the electrode pad 121 of the inspection object 102, and the contact surface 21 is formed to have irregularities. The unevenness of the contact surface 21 is formed so that the surface roughness is an arithmetic average roughness (Ra) of 0.1 μm to 0.7 μm. The surface roughness is more preferably 1.0 μm or more and 0.3 μm or less.

  In the probe card 110 of the present embodiment, a plurality of contact probes 1 are arranged on the probe substrate 107 at a predetermined pitch in the beam width direction, and a row of contact probes 1 arranged at such a pitch is a beam. Two rows are formed so that the tip faces each other. In the present embodiment, a row of contact probes 1 is formed with the direction parallel to any one side of the rectangular probe substrate 107 as the arrangement direction. The interval between the contact probes 1 is determined according to the pitch between the electrode pads 121 formed on the inspection object 102.

  Each contact probe 1 is electrically connected to the external terminal 161 of the main board 106 via each wiring formed on the probe board 107, the connecting member 108, and the main board 106. By bringing the contact portion 2 of the contact probe 1 into contact with the minute electrode pad 121 of the inspection object 102, the inspection object 102 can be electrically connected to the tester device.

[Component materials of contact probe]
Next, the material of each component of the contact probe 1 will be described. Since the contact probe 1 is preferably as low as possible, each component of the contact probe needs to be made of a material having high conductivity. Examples of such highly conductive materials include silver (Ag), copper (Cu), gold-copper alloy (Au—Cu), nickel (Ni), palladium nickel alloy (Pd—Ni), nickel cobalt alloy (Ni—). Co), nickel tungsten (Ni-W), platinum (Pt), gold (Au), rhodium (Rh), and the like. In this embodiment, since the sacrificial layer 4 to be described later is formed of copper, the beam portion 3 of the contact probe 1 is preferably formed of a conductive material that does not dissolve in the copper etching solution. In the present embodiment, the beam portion 3 is formed using a nickel cobalt alloy.

  Further, since the contact portion 2 of the contact probe 1 is repeatedly brought into contact with the electrode pad 121 of the inspection object 102, high wear resistance is required. Moreover, each time the contact portion 2 is brought into contact with the electrode pad 121, it is required to scratch the surface of the electrode pad 121 to remove dust, oxide film, and the like on the surface. Therefore, examples of the conductive material used for forming the contact portion 2 include highly wear-resistant conductive materials such as rhodium (Rh) and palladium cobalt alloy (Pd—Co). In the present embodiment, the contact portion 2 is made of rhodium (Rh).

[Contact probe manufacturing process]
4 and 5 are diagrams showing an example of a manufacturing process of the contact probe 1 shown in FIG. The contact probe 1 is manufactured using a so-called MEMS (Micro Electro Mechanical Systems) technique. The MEMS technique is a technique for creating a fine three-dimensional structure using a photolithography technique and a sacrificial layer etching technique. The photolithography technique is a fine pattern processing technique using a photosensitive resist used in a semiconductor manufacturing process or the like. The sacrificial layer etching technique is a technique for forming a three-dimensional structure by forming a lower layer called a sacrificial layer, further forming a layer constituting the structure thereon, and then etching only the sacrificial layer. is there.

  A well-known plating technique can be used for forming each layer including the sacrificial layer. For example, by immersing a substrate as a cathode and a metal piece as an anode in an electrolytic solution and applying a voltage between both electrodes, the metal ions in the electrolytic solution can be attached to the substrate surface. Such a process is called an electroplating process. Since such an electroplating process is a wet process in which the substrate is immersed in an electrolytic solution, a drying process is performed after the plating process. Further, after drying, a flattening process for flattening the laminated surface by a polishing process or the like is performed as necessary.

  FIG. 4A shows a sacrificial layer forming step for forming the sacrificial layer 4 made of copper on the insulating substrate 109. Although not shown, first, a conductive film is formed on the insulating substrate 109 with copper. This conductive film is formed by vacuum deposition such as sputtering.

  Then, by applying a voltage to the conductive film, the sacrificial layer 4 is formed by electroplating copper on the upper surface of the conductive film. At this time, the surface roughness is arithmetically calculated on the plating growth surface of the sacrificial layer 4 as shown in FIG. Irregularities having an average roughness (Ra) of 0.1 μm or more and 0.7 μm or less can be formed.

  In addition, after the sacrificial layer 4 is formed, the surface of the sacrificial layer 4 may be etched or electropolished to form irregularities.

  When the sacrificial layer 4 is formed, as shown in FIG. 4B, a photoresist made of a photosensitive organic material is applied on the sacrificial layer 4 to form a first resist layer 51. Thereafter, the surface of the first resist layer 51 is selectively exposed to partially remove the first resist layer 51, whereby the first opening 51a is formed. In the present embodiment, as shown in FIG. 4B, a part of the sacrificial layer 4 having irregularities is exposed in the first opening 51a. The first opening 51 a is formed by removing the resist in the region corresponding to the contact portion 2.

  Next, as shown in FIG. 4C, the first metal layer 61 is formed on the sacrificial layer 4 by electroplating rhodium (Rh) in the first opening 51a. This first metal layer 61 constitutes the contact portion 2. Since the end surface of the first metal layer 61 and the upper surface of the first resist layer 51 need to be smooth surfaces for forming the beam portion 3, the first resist layer 51 and the first metal layer 61 are polished. Thus, the end surface of the first metal layer 61 is flattened.

  After the first metal layer 61 is formed, a second resist layer 52 is formed by applying a photoresist again on the first resist layer 51 and the first metal layer 61 as shown in FIG. To do. Then, by selectively exposing the surface of the second resist layer 52, a part of the second resist layer 52 is removed, and a long and narrow second opening 52a that matches the shape of the beam portion 3 of the contact probe 1 is formed. A plurality are formed. Although not shown, a plurality of second openings 52a are formed with a predetermined pitch in the probe width direction.

  Next, although not shown, a conductive film is formed on the first resist layer 51 and the first metal layer 61 with a nickel cobalt alloy (Ni—Co). The conductive film of nickel cobalt alloy is also formed by vacuum deposition such as sputtering.

  And as shown in FIG.4 (e), by applying a voltage to the electroconductive film of nickel cobalt alloy, nickel cobalt alloy (Ni-Co) is made into Ni-Co electroconductive film in each 2nd opening part 52a. Electroplate on top. By this electroplating, a nickel cobalt alloy is deposited on the Ni—Co conductive film to form the second metal layer 62. This second metal layer 62 becomes the elastic deformation portion 32 of the beam portion 3. Then, the second metal layer 62 is polished together with the second resist layer 52 to flatten the end surface of the second metal layer 62.

  After the second metal layer 62 is formed, a third resist layer 53 is formed by applying a photoresist again on the second resist layer 52 and the second metal layer 62 as shown in FIG. To do. Then, by selectively exposing the surface of the third resist layer 53, a part of the third resist layer 53 is removed, and a plurality of third openings 53a matching the shape of the substrate fixing part 31 of the beam part 3 are provided. It is formed. The third opening 53a is formed on the second opening 52a.

  Then, as shown in FIG. 5B, by applying a voltage to the second metal layer 62, nickel cobalt alloy (Ni—Co) is electrically deposited on the second metal layer 62 in each third opening 53 a. Continue plating. By this electroplating, a nickel cobalt alloy is deposited on the second metal layer 62 to form the third metal layer 63. This third metal layer 63 becomes the substrate fixing portion 31 of the beam portion 3.

  After the third metal layer 63 is formed, the first resist layer 51, the second resist layer 52, and the third resist layer 53 are removed as shown in FIG. The contact probe 1 is obtained by removing the sacrificial layer 4 using.

  In this embodiment, when the contact probe 1 is formed from the contact portion 2, unevenness is formed on the entire surface of the sacrificial layer 4, and the end surface of the contact portion 2 is formed using the unevenness of the sacrificial layer 4 as a mold. Concavities and convexities were formed on the surface. Regardless of the position on the sacrificial layer 4 where the contact probe 1 is formed, irregularities with a predetermined surface roughness can be formed on the end face of the contact portion 2.

Embodiment 2. FIG.
In Embodiment 1 described above, irregularities are formed on the sacrificial layer, and after forming a contact portion on the sacrificial layer, a beam probe is formed to form a contact probe. In the second embodiment, as shown in FIG. 6, a manufacturing method in the case of forming a contact probe by laminating a conductive material from the substrate fixing portion of the beam portion in the height direction of the probe will be described.

  The contact probe 1 of the present embodiment is formed of the same material as that of the first embodiment described above, and the same reference numerals are given to the same components. The contact probe 1 of the present embodiment has the same configuration as that shown in FIG. In this embodiment, the probe substrate 107 is used as the insulating substrate.

  In the present embodiment, first, as shown in FIG. 6A, a photoresist made of a photosensitive organic material is applied on the probe substrate 107 to form a first resist layer 71. Thereafter, the surface of the first resist layer 71 is selectively exposed to partially remove the first resist layer 71, thereby forming a first opening 71a. The first opening 71 a is formed by removing the resist in a region corresponding to the substrate fixing portion 31 of the beam portion 3. Although not shown, a conductive film is formed of a nickel cobalt alloy on the probe substrate 107 exposed in the first opening 71a. This conductive film is formed by vacuum deposition such as sputtering.

  Then, as shown in FIG. 6B, by applying a voltage to the nickel cobalt alloy conductive film, the nickel cobalt alloy (Ni-Co) is electroplated on the conductive film in the first opening 71a. To go. By this electroplating, a nickel cobalt alloy is deposited on the conductive film to form the first metal layer 81. This first metal layer 81 becomes the substrate fixing portion 31 of the beam portion 3. Since the end surface of the first metal layer 81 and the upper surface of the first resist layer 71 need to be smooth surfaces in order to form the elastic deformation portion 32 of the beam portion 3 next, the first resist layer 71 and the first resist layer 71 The metal layer 81 is polished to flatten the end surface of the first metal layer 81.

  After the first metal layer 81 is formed, a second resist layer 72 is formed by applying a photoresist again on the first resist layer 71 and the first metal layer 81 as shown in FIG. 6C. To do. Then, by selectively exposing the surface of the second resist layer 72, a part of the second resist layer 72 is removed, and a long and narrow second opening 72a that matches the shape of the beam portion 3 of the contact probe 1 is formed. It is formed.

  Next, although not shown, a conductive film is formed of nickel cobalt alloy (Ni-Co) on the first resist layer 71 and the first metal layer 81 exposed in the second opening 72a. The conductive film of nickel cobalt alloy is also formed by vacuum deposition such as sputtering.

  And as shown in FIG.6 (d), by applying a voltage to the electroconductive film of nickel cobalt alloy, nickel cobalt alloy (Ni-Co) is made into Ni-Co electroconductive film in each 2nd opening part 72a. Electroplate on top. By this electroplating, a nickel cobalt alloy is deposited on the Ni—Co conductive film to form the second metal layer 82. This second metal layer 82 becomes the elastic deformation portion 32 of the beam portion 3. Then, the second metal layer 82 is polished together with the second resist layer 72 to flatten the end surface of the second metal layer 82.

  After the second metal layer 82 is formed, a third resist layer 73 is formed by applying a photoresist again on the second resist layer 72 and the second metal layer 82, as shown in FIG. 6 (e). To do. Then, by selectively exposing the surface of the third resist layer 73, a part of the third resist layer 73 is removed, and a third opening 73a matching the shape of the contact portion 2 is formed. The third opening 73a is formed on the second opening 72a.

  Then, as shown in FIG. 6 (f), by applying a voltage to the second metal layer 82, rhodium (Rh) is electroplated on the upper surface of the second metal layer 82, thereby forming the third metal layer 82. Form. This third metal layer 82 constitutes the contact portion 2. At this time, by performing electroplating by adjusting the additive amount and current value of the rhodium plating solution, the surface roughness of the plating growth surface of the third metal layer 82 is reduced as shown in FIG. Unevenness having an arithmetic average roughness (Ra) of 0.1 μm or more and 0.7 μm or less can be formed.

  After the third metal layer 82 is formed, the first resist layer 71, the second resist layer 72, and the third resist layer 73 are removed as shown in FIG. The contact probe 1 having irregularities formed on the contact surface 21 is obtained. Since unevenness is formed on the contact surface 21 of the contact part 2, the contact state between the contact part 2 and the electrode pad 121 can be stabilized.

  In this embodiment, since the contact probe 1 is formed from the side fixed to the probe substrate 107 to the free end side, the contact probe 1 can be fixed to the probe substrate 107 at the same time as the contact probe 1 is formed. Therefore, the work of fixing the contact probes 1 to the probe substrate 107 one by one can be eliminated, and the manufacturing cost can be reduced.

Embodiment 3 FIG.
In the second embodiment, the amount of the additive of the electroplating solution for forming the contact portion and the current density at the time of electroplating are adjusted to form irregularities on the contact surface of the contact portion with the inspection object. In the third embodiment, as shown in FIG. 7A, after the contact portion is formed by electroplating so that the end face of the contact portion 2 is substantially flat, as shown in FIG. Unevenness is formed by etching or electropolishing the contact surface 21 of the contact portion 2. In this embodiment, since the unevenness is formed on the contact surface 21 after the contact portion 2 is formed by electroplating, the contact state with the electrode pad 121 is stabilized only by adding an etching process to the conventional processing process. The contact probe 1 that can be formed can be formed. In FIG. 7, the resist layer is omitted.

Embodiment 4 FIG.
Further, as shown in FIG. 8, when the contact probe 1 is formed from the side fixed to the probe substrate 107 to the free end side, irregularities are also formed on the plating growth surface in the beam portion 3, and the beam It is also possible to form the contact part 2 on the uneven surface of the part 3 and form the unevenness on the contact surface 21 of the contact part 2. Hereinafter, a method for manufacturing the contact probe according to the fourth embodiment will be described.

  The contact probe 1 of the present embodiment is also formed of the same material as that of the first embodiment described above, and the same reference numerals are given to the same components. In the present embodiment, the probe substrate 107 is used as the insulating substrate, as in the second embodiment.

  In the present embodiment, first, a first resist layer 91 is formed by applying a photoresist made of a photosensitive organic material on the probe substrate 107 as shown in FIG. Thereafter, the surface of the first resist layer 91 is selectively exposed to partially remove the first resist layer 91, thereby forming a first opening 91a. The first opening 91 a is formed by removing the resist in a region corresponding to the substrate fixing portion 31 of the beam portion 3. Although not shown, a conductive film is formed of a nickel cobalt alloy on the probe substrate 107 exposed in the first opening 91a. This conductive film is formed by vacuum deposition such as sputtering.

  Then, as shown in FIG. 8B, a voltage is applied to the nickel cobalt alloy conductive film to electroplate nickel cobalt alloy (Ni—Co) on the conductive film in the first opening 91a. To go. By this electroplating, a nickel cobalt alloy is deposited on the conductive film to form the first metal layer 81a. This first metal layer 81 a becomes the substrate fixing portion 31 of the beam portion 3. Since the end surface of the first metal layer 81 a needs to be a smooth surface in order to form the elastic deformation portion 32 of the beam portion 3 next, the first metal layer 81 a is polished together with the first resist layer 91. The end surface of the first metal layer 81a is flattened.

  After the first metal layer 81a is formed, as shown in FIG. 8C, the second resist layer 92 is formed by applying a photoresist again on the first resist layer 91 and the first metal layer 81a. To do. Then, by selectively exposing the surface of the second resist layer 92, a part of the second resist layer 92 is removed, and a long and narrow second opening 92a that matches the shape of the beam portion 3 of the contact probe 1 is formed. It is formed.

  Next, although not shown, a conductive film is formed of nickel cobalt alloy (Ni-Co) on the first resist layer 91 and the first metal layer 81a exposed in the second opening 92a. The conductive film of nickel cobalt alloy is also formed by vacuum deposition such as sputtering.

  And as shown in FIG.8 (d), by applying a voltage to the electroconductive film of nickel cobalt alloy, nickel cobalt alloy (Ni-Co) is made into Ni-Co electroconductive film in each 2nd opening part 92a. Electroplate on top. By this electroplating, a nickel cobalt alloy is deposited on the Ni—Co conductive film to form the second metal layer 82a. This second metal layer 82 a becomes the elastic deformation portion 32 of the beam portion 3.

  When the second metal layer 82a is formed, by performing electroplating by adjusting the additive amount and current value of the additive of the nickel cobalt alloy plating solution, as shown in FIG. Irregularities having a surface roughness of arithmetic mean roughness (Ra) of 0.1 μm or more and 0.7 μm or less can be formed on the plating growth surface.

  After the second metal layer 82a is formed, as shown in FIG. 8E, a third resist layer 93 is formed by applying a photoresist again on the second resist layer 92 and the second metal layer 82a. To do. Then, by selectively exposing the surface of the third resist layer 93, a part of the third resist layer 93 is removed, and a third opening 93a matching the shape of the contact portion 2 is formed. The third opening 93a is formed on the second opening 92a.

  And as shown in FIG.8 (f), by applying a voltage to the 2nd metal layer 82a, electroplating rhodium (Rh) on the upper surface in which the unevenness | corrugation of the 2nd metal layer 82a was formed, the 1st Three metal layers 83a are formed. This third metal layer 83 a constitutes the contact portion 2. At this time, since the surface of the second metal layer 82a is moderately rough, the surface of the third metal layer 83a reflects the base, and the plating growth surface of the third metal layer 83a is reflected as shown in FIG. Irregularities having a surface roughness of arithmetic average roughness (Ra) of 0.1 μm or more and 0.7 μm or less can be formed. As the height of the third metal layer 83a increases, the roughness of the base is not reflected, and therefore the height of the third metal layer 83a is preferably 20 μm or less.

  After the third metal layer 82a is formed, the first resist layer 91, the second resist layer 92, and the third resist layer 93 are removed as shown in FIG. Is obtained.

  In the present embodiment, since the contact portion 2 is laminated on the uneven surface of the beam portion 3, the contact surface 21 of the contact portion 2 becomes an uneven surface while the adhesion between the beam portion 3 and the contact portion 2 can be improved. Therefore, the contact with the electrode pad 121 can also be stabilized.

  Further, in the present embodiment, the contact probe 1 is formed from the side fixed to the probe substrate 107 to the free end side as in the second embodiment, so that the probe probe 107 is formed simultaneously with the formation of the contact probe 1. The contact probe 1 can be fixed. Therefore, the work of fixing the contact probes 1 to the probe substrate 107 one by one can be eliminated, and the manufacturing cost can be reduced.

It is the figure which showed an example of schematic structure of the probe apparatus 100 containing the probe card 110 by embodiment of this invention, and the mode inside the probe apparatus 100 is shown. It is the figure which showed the structural example of the probe card 110 in the probe apparatus 100 of FIG. It is the side view which showed an example of the contact probe by Embodiment 1 of this invention. 6 is a diagram showing an example of a process for forming a contact probe according to Embodiment 1. FIG. FIG. 8 is a diagram illustrating an example of a process for forming a contact probe according to the first embodiment, and illustrates a continuation of FIG. 6 is a diagram showing an example of a process for forming a contact probe according to Embodiment 2. FIG. It is a figure which showed an example of the process of forming the contact probe which concerns on Embodiment 3, and has shown the process of processing the end surface of a contact part. FIG. 10 is a diagram illustrating an example of a process for forming a contact probe according to a fourth embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Contact probe 2 Contact part 21 Contact surface 3 Beam part 31 Substrate fixing | fixed part 32 Elastic deformation part 4 Sacrificial layer 51,71,91 1st resist layer 51a, 71a, 91a 1st opening part 52,72,92 2nd resist layer 52a, 72a, 92a Second openings 53, 73, 93 Third resist layers 53a, 73a, 93a Third openings 61, 81, 81a First metal layers 62, 82, 82a Second metal layers 63, 83, 83a Third metal layer 100 Probe device 102 Inspection object 121 Electrode pad 103 Movable stage 104 Drive device 105 Housing 106 Main substrate 161 External terminal 162 Connector 107 Probe substrate 108 Connecting member 109 Insulating substrate 110 Probe card

Claims (6)

  A beam portion having a cantilever structure, one end of which is fixed to the substrate, and a contact portion mounted on a surface facing the inspection object near the free end of the beam portion, and the inspection object of the contact portion A contact probe characterized in that unevenness having an arithmetic average roughness (Ra) of 0.1 μm or more and 0.7 μm or less is formed on a contact surface with an object. A method of manufacturing a contact probe having a beam portion having a cantilever structure, one end of which is fixed to a substrate, and a contact portion formed on a surface facing an inspection object near the free end of the beam portion,
After laminating a conductive material and forming a sacrificial layer having irregularities with a surface roughness of arithmetic mean roughness (Ra) of 0.1 μm or more and 0.7 μm or less on the surface, the contact portion and The first metal layer to be stacked is formed, and the second metal layer to be the beam portion is stacked and formed on the first metal layer so as to be partially continuous. A method of manufacturing a contact probe, wherein irregularities having an arithmetic mean roughness (Ra) of 0.1 μm or more and 0.7 μm or less are formed on a contact surface with an object.   3. The contact probe according to claim 2, wherein the surface roughness of the sacrificial layer formed by laminating the conductive material is etched to form unevenness of the surface roughness on the surface. 4. Production method. After laminating a conductive material to form a beam portion with a cantilever structure whose one end is fixed to the substrate, a conductive material is laminated on the surface facing the object to be inspected near the free end of this beam portion to make contact A method of manufacturing a contact probe for forming a part,
After the contact portion is formed, an etching process is performed on the contact surface of the contact portion with the inspection object, so that the surface roughness of the contact surface is an arithmetic average roughness (Ra) of 0.1 μm or more and 0.7 μm. The manufacturing method of the contact probe characterized by forming the unevenness | corrugation used as follows. After laminating the conductive material to form a beam part with a cantilever structure whose one end is fixed to the substrate, the conductive material is laminated on the surface facing the object to be inspected near the free end of the beam part and contacted A method of manufacturing a contact probe for forming a part,
By controlling the magnitude of the current density and the amount of additive added in the plating solution, and forming the beam part and the contact part by electroplating, the contact surface of the contact part to the inspection object A method of manufacturing a contact probe, comprising forming irregularities having an arithmetic mean roughness (Ra) of 0.1 μm or more and 0.7 μm or less on a plated growth surface. After laminating the conductive material to form a beam part with a cantilever structure whose one end is fixed to the substrate, the conductive material is laminated on the surface facing the object to be inspected near the free end of the beam part and contacted A method of manufacturing a contact probe for forming a part,
After the contact portion is formed, the contact surface of the contact portion with the object to be inspected is electrolytically polished, whereby the surface roughness of the contact surface is an arithmetic average roughness (Ra) of 0.1 μm to 0.7 μm. The manufacturing method of the contact probe characterized by forming the unevenness | corrugation used as this.

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