200940999 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種半導體積體電路等半導體元件之電 氣測試所使用之接觸子及其製造方法。 【先前技術】 ❹ ❹ 形成於半導體晶圓之未切斷積體電路、或已從半導體 晶圓切斷之積體電路等平板狀半導體元件，係經電氣測試 以確認其是否為按照規格所製造。 此種電氣測試係使用分別按壓於半導體元件之焊墊電 極的複數個探針，亦即係制將接觸子配置於配線基板或 探針基板等基板之探針卡來進行。此種探針卡係以將焊塾 電極與測試裝置亦即測試器之電路予以電氣連接的方式安 裝於測試器。 此種探針卡所制之接觸子之―，係有—種板狀物（專 利文獻1)，其包含以往上下方向延伸之狀態安裝於基板之 板狀安裝部'從該安裝部之下端部往左右方向之一側延伸 之板狀臂部、從該臂部之前端部往下方突出之板狀台座 :、及從該台座部之下端部往下方突出且以該接觸部之下 端為針尖之板狀或柱狀之接觸部（亦即，至焊”極 觸部）。 设 上述接觸子中，安裝部、臂部、及台座部係以導電性 金屬材料形成為板狀之接觸子本體。此種接觸子係在安裝 部之上端安裝於基板並以懸臂樑狀支承於該基板。 、 3 200940999 將多數個上述接觸子配置於基板之探針卡係安裝於測 試器。各接觸子係在探針卡安裝於測試器之狀態下，將針 尖按壓於焊墊電極，藉此使過驅動力—㈣ 觸子。 、恢 藉此，接觸子係在臂部彈性變_，並以針尖刮除焊塾 電極表面之氧化膜。以針尖刮除電極表面之氧化膜的作用 係依待測試之各半導體元件分別反覆進行。 然而，此種接觸子中，接觸子如上述當過雜動力 (〇Verdrive)仙時，以臂部側之部位為中心使接觸部彎曲 等較大之負載即作用於接觸部。 因此因反覆進行對焊墊電極之按壓，在接觸部便會 產生裂痕、缺損、及折辦望^ i 批 及祈断等知傷。又，因針尖位置相對焊 墊電極之偏移’導致針尖按壓至焊塾電極以外之部位、或 f觸至焊塾電極之端部等，使扭轉力作用於接觸子，尤其 疋作用，接觸部，而造成接觸部損傷之情形亦不少。如此， 具有已知傷之接觸部的接觸不，县a & μ 使用。 1的接觸子，最後接觸部會折損而無法 2) 述各課題’6提出有—種技術（專利文獻 、’、'會隨著臂部之彈性變形，補強滑動在焊墊電 向（亦即，磨洗方向）之接觸部的部位。又，本 4明人4亦發明—錄姑 種技術（日本特願2006- 270543號）， 對上述扭轉補強與磨 位。 方向呈直角方向之接觸部的部 ‘、、、而專利文獻1所記載之類型之接觸子中，在過驅 200940999 動力（overdrive)作用於該接觸子時，由於在接觸部產生裂 • 痕、缺損、折斷、及扭轉等之複雜之力會作用於接觸部， 因此如專利文獻2之技術及所提出之技術般，即使將只能 解決其各自課題之技術應用於專利文獻丨之接觸子（上述 複雜之力作用於接觸部），亦無法解決該接觸子特有之課 題。 ' 專利文獻 1 : WO 2006/075408 A1 專利文獻2 :日本特開2007— 192719號公報 響 【發明内容】 本發明之目的係在於防止因反覆施加過驅動力 (〇verdrive)而造成接觸部之折斷或缺損等以進行正常之 氣測試。 电 本發明之電氣測試用接觸子，其包含：板狀接觸子本 體，具備往上下方向延伸之安裝部、從該安裝部之下端部 ❹=左右方向之至少一側延伸之臂部、及從該臂部之前端部 ^ I方突出之台座部；接觸部，從該台座部之下端部往下 方犬出’ 1以該接觸冑之下端為抵接於半導體元件之電極 的針尖，以及補強部，係配置於該接觸部及該台座部之至 少邊，部附近。該補強部，係以不同於該接觸子本體、且 具有咼於該接觸部之韌性之金屬材料形成。 該補強部可包含被覆從該台座部之下端部至 D 、除該針尖以外之其餘所有表面區域的膜。 形成該補強部之該金屬材料可包含含有至少2種金屬 5 200940999 元素之合金。 該補強部可包含積層之至少2種金屬材料層。 本發明之電氣測試用接觸子之製造方法，可應用於用 以製造具備板狀接觸子本體、及從該接觸子本體突出且以 前端為針尖之接觸部的電氣測試用接觸子。 該製造方法包含以下步驟。 第1步驟’至少將具有仿照該接觸部之第丄凹處的第1 光阻層形成於基座構件之上，並藉由適宜之材料的沉積將 犧牲層形成於該第1凹處。 第2步驟，在除去該第1光阻層後，將具有仿照該接 觸部與該接觸部附近之該接觸子本體之部位之帛2凹處的 第2光阻層形成於該基座構件之上，並藉由具有高於該接 觸部之勒性之導電性材料的沉積，將帛"甫強層形成於該 第凹處再進步藉由具有高於該第1補強層之硬度之 導電性材料的沉積，將該接觸部形成於㈣2凹處。 第3步驟’除去該第2光阻層，將具有仿照該接觸子 本體之第3凹處的第3光阻層形成於基座構件之上，並藉 由不同於该第1補強層、且韌性高於該接觸部之導電性材 料的沉積，將該接觸子本體形成於該第3凹處。 第4步驟，在除去該第3光阻層後，將具有仿照該接 觸部與該接觸部附近之該接觸子本體之部位之第4凹處的 第4光阻層形成於該基座構件之上，並藉由具有高於該接 觸部之勒性且不同於該探針本體之導電性材料的沉積將 第2補強層形成於該第4凹處。 200940999 第#驟，將包含該第i補強層、該接觸部、該接觸 體及忒第2補強層之接觸子從該基座構件予以分離。 上述製造方法令，往該各凹處之材料的沉積，亦可藉 選自包含電鍍技術、濺鍍技術、及蒸鍍技術組之至 少1種形成。 若補強部以不同於接觸子本體、且具有高於接觸部之 動性之金屬材料形成時，接觸部對因磨洗方向以外之扭轉 ❹ =產生而以三維作用於接觸子之不規則力會變得柔軟，使 接觸部不易損傷及破損。 *補強口P包含被覆從台座部之下端部至接觸部、除針 '、以外之所有表面區域的膜時，接觸部對不規則力會變得 更柔軟’而更不易損傷及破損。 【實施方式】 以下，針對實施例作說明。 〔用§吾定義〕 本發明中，在圖2中係將以安裝部之侧及針尖之側分 別士上方及下方之方向稱為上下方向，將以接觸子之臂部 之前端部側及基端部側分別為左方及右方之方向稱為左右 方向，將正交於上下方向及左右方向之紙背彳肖（接觸子 之厚度方向）稱為前後方向。 然而，此等方向係依將配置有多數個接觸子之基板安 ，於冽試器之狀態之該基板的姿勢而異。因此，例如本發 月所稱之上下方向’在將配置有多數個接觸子之基板安裝 7 200940999 於測試器之狀態下，可呈上下顛倒之狀態 之狀態》 斜方向 〔電氣連接裝置及接觸子之實施例〕 參照圖卜電氣連接裝置10係使用在以形成於半導體 晶圓之積體電路等平板狀被檢查體為半導體元件12， 認該半導體元件12是否為按昭 時，用以將半導體元件12之::=所製造之電氣測試 導體兀件12之知墊電極與測試器予以電氣 接。 尚未=例中：半導體元件12雖為形成於半導體晶圓之 接裝置10 $過已切斷之半導體元件亦可。使用電氣連 之電氣測試中，複數個半導體元件12係同時進 行電氣測試。 你U時進 電氣連接裝置10，包含.且供 觸子!4的探針卡16、以上面：備電氣測試用之複數個接 ㈣、… 上面承受半導體元件12之炎頭頂 使夾頭頂部18至少於 rfc- -y - 及石万向、及上下 方向之二個方向三維移動的檢查載台Μ 台20以對至少！個接觸子14 ； 載 如菌 订攝影的區域感測器22。 板狀=各接觸子14,包含:往上下方向延伸之 1 =臂:;從安裝部24之下端部往左右方向之-侧延 座部28、及：Γ 26之前端部往下方突出之板狀台 座4 28 &從台座部28之下端 接觸部30。 穴出之板狀或柱狀之 安裝部24，係在上端部一 板之板狀安裝區域24a、及：女裝於此後說明之基 裝£域24a之下端部往下方 200940999 延伸之板狀延長部24b。 臂部26，且借. 伸之板狀第了;^方向隔著間隔並往左右方向延 34在其等# 32及34、及將第1及第2臂32及 連結部36:。及後端部分別加以連結之板狀第1及第2 又，臂部26係一體;^绩认一 # 邻24hW 體接續於文裝部24(實際上，係延長 4 24b )之下端部， #°卩26係在位於基端側之第2連結 4 38支承於安裝部24， ❹部…端部往左右…及第2臂32及34從安裝 4友右方向之一側延伸。 台座部28，係該台座部 第2臂 I 28為在左右方向及下方延伸於 弟2哥34之刖端部的 部與第u 體接續於該前端側之下緣 …6之下緣部。台座部28係與安裝部“及 煮部26共同形成板狀接觸子本體。 共同形成接觸子本體之安裝部24、臂部26、及 2—8’係設置成在前後方向具有大致相同之均勾厚度:寸^ ❹[體之板的形狀。因此，接觸子14係設置成整體平坦之板 如圖3至圖5所示，從下方觀看接觸部30時，位 =”8之接觸部30周圍的下面區域，具有位於二 周圍之 6 個面 44a，44b，44c，44d，4扑及 44f。 6個面44a，44b，44c，44d, 44e及44f係分別相對水 (通過接觸部30之中心往上下方向延伸的假想輪線料）傾 斜’以使愈下方之部位愈成為接觸部3〇之側， 接觸部30之側之部位為愈下方^ 文邳馮 9 200940999 部二面…及則分別相對於接觸 側及另一側。其他2個傾斜面44 及44d係分別相對於 贸针面44c 、接觸。卩30位於左右方向之—側並位於 月1J後方向之一側及·^ 侧。其餘2個傾斜面44e及44f則分 別相對於接觸部3〇位於 、左右方向之另一側並位於前BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact used in an electrical test of a semiconductor element such as a semiconductor integrated circuit and a method of manufacturing the same. [Prior Art] 平板 平板 A flat semiconductor element such as an uncut integrated circuit formed on a semiconductor wafer or an integrated circuit that has been cut from a semiconductor wafer is electrically tested to confirm whether it is manufactured according to specifications. . In such an electrical test, a plurality of probes respectively pressed against the pad electrodes of the semiconductor element are used, that is, a probe card in which a contact is placed on a substrate such as a wiring board or a probe substrate. The probe card is mounted to the tester in such a manner that the solder tab electrode is electrically connected to the test device, i.e., the circuit of the tester. A contact plate made of such a probe card has a plate-like shape (Patent Document 1), and includes a plate-shaped mounting portion that is attached to the substrate in a state in which the vertical direction is extended from the lower end portion of the mounting portion. a plate-shaped arm portion extending toward one side in the left-right direction, a plate-shaped pedestal projecting downward from the front end portion of the arm portion, and protruding downward from the lower end portion of the pedestal portion and having a needle tip at a lower end of the contact portion A plate-like or columnar contact portion (that is, a solder-to-weld contact portion). In the contact, the mounting portion, the arm portion, and the pedestal portion are formed into a plate-shaped contact sub-body by a conductive metal material. The contact element is mounted on the substrate at the upper end of the mounting portion and supported by the substrate in a cantilever shape. 3, 2009, 999, 2009. A probe card system in which a plurality of the contact elements are arranged on a substrate is attached to a tester. When the probe card is installed in the tester, the tip of the probe is pressed against the electrode of the pad, thereby causing the overdrive force—(4) the contactor, and the contact sub-system is elastically changed in the arm, and scraped off with the tip of the needle. An oxide film on the surface of the electrode is welded The action of scraping off the oxide film on the surface of the electrode is performed separately depending on the respective semiconductor elements to be tested. However, in such a contact, the contact is as described above when the power is excessive (〇Verdrive), and the portion on the arm side is used. In the center, the contact portion is bent and the load is applied to the contact portion. Therefore, the electrode is pressed against the electrode, and cracks and defects are generated at the contact portion, and the batch is opened and the pray is known. In addition, due to the offset of the tip position relative to the electrode of the pad, the tip of the tip is pressed to a portion other than the electrode of the pad, or the end of the electrode of the pad is touched, so that a torsional force acts on the contact, in particular, There are many cases where the contact portion is damaged, so that the contact with the known damage contact is not used, and the county a & μ uses the contact of the first contact, and the last contact portion is broken and cannot be 2) The subject '6 proposes a kind of technology (patent literature, ', ' will be elastically deformed with the arm, and the part of the contact portion that is slid in the electric direction of the pad (that is, the direction of the grinding) is reinforced. People 4 also invented - recorded aunt (Japanese Patent No. 2006-270543), in the above-mentioned torsion reinforcement and grinding position, the contact portion of the contact portion in the direction of the right direction, and the contact type of the type described in Patent Document 1, in the overdrive 200940999 When the overdrive acts on the contact, the complicated force such as cracks, defects, breaks, and twists at the contact portion acts on the contact portion, and thus the technique of the patent document 2 and the proposed technique Even if the technology that can only solve their respective problems is applied to the contact of the patent document (the above-mentioned complicated force acts on the contact portion), the problem unique to the contact cannot be solved. Patent Document 1: WO 2006/075408 A1 Patent Document 2: JP-A-2007-192719 SUMMARY OF THE INVENTION The object of the present invention is to prevent a break or a defect of a contact portion due to repeated application of an overdrive force (〇verdrive) to perform a normal gas test. The contact for electrical test according to the present invention includes: a plate-shaped contact sub-body having a mounting portion extending in the vertical direction, an arm extending from at least one side of the lower end portion of the mounting portion, and a left-right direction, and a pedestal portion protruding from a front end portion of the arm portion; a contact portion from the lower end portion of the pedestal portion to the lower end of the shank portion 1 with a lower end of the contact yoke abutting a tip of the electrode of the semiconductor element, and a reinforcing portion The system is disposed near at least the side of the contact portion and the pedestal portion. The reinforcing portion is formed of a metal material different from the contact sub-body and having the toughness of the contact portion. The reinforcing portion may include a film covering all of the surface regions except the tip of the pedestal to D and the tip. The metal material forming the reinforcing portion may comprise an alloy containing at least two metals 5 200940999 elements. The reinforcing portion may include at least two metal material layers laminated. The method for producing a contact for electrical test of the present invention can be applied to an electric test contactor having a plate-shaped contact sub-body and a contact portion projecting from the contact sub-body and having a tip end as a tip. The manufacturing method comprises the following steps. The first step 'forms at least a first photoresist layer having a second recess which follows the contact portion on the base member, and the sacrificial layer is formed in the first recess by deposition of a suitable material. In the second step, after the first photoresist layer is removed, a second photoresist layer having a recess 2 in the portion of the contact portion adjacent to the contact portion and the contact portion is formed on the base member. And, by depositing a conductive material having a higher affinity than the contact portion, forming a 帛" 甫 quot layer in the first recess and further improving the conductive layer having a hardness higher than that of the first reinforcing layer The deposition of the material is formed in the (4) 2 recess. The third step 'removing the second photoresist layer, forming a third photoresist layer having a third recess in the body of the contact sub-substrate on the base member, and being different from the first reinforcing layer, and The toughness is higher than the deposition of the conductive material of the contact portion, and the contact body is formed in the third recess. In the fourth step, after removing the third photoresist layer, a fourth photoresist layer having a fourth recess in the portion of the contact portion adjacent to the contact portion and the contact portion is formed on the base member. And forming a second reinforcing layer in the fourth recess by depositing a conductive material having a higher affinity than the contact portion and different from the probe body. In the first step of 200940999, the contact member including the i-th reinforcing layer, the contact portion, the contact body, and the second reinforcing layer is separated from the base member. The above manufacturing method allows the deposition of the material to the respective recesses to be formed by at least one selected from the group consisting of electroplating techniques, sputtering techniques, and vapor deposition techniques. If the reinforcing portion is formed of a metal material different from the contact sub-body and having a mobility higher than that of the contact portion, the contact portion may generate a three-dimensional action on the contact member due to the twist ❹ = generated by the rubbing direction. It becomes soft and makes the contact portion less susceptible to damage and breakage. * When the reinforcing port P includes a film covering all the surface areas except the lower end portion of the pedestal portion to the contact portion and the needle ', the contact portion becomes softer than the irregular force, and is less likely to be damaged or broken. [Embodiment] Hereinafter, an embodiment will be described. [Definition by §] In the present invention, in FIG. 2, the direction above and below the side of the mounting portion and the side of the needle tip are referred to as the vertical direction, and the front end side and the base of the arm portion of the contact portion are referred to. The direction of the left side and the right side of the end side is referred to as the left-right direction, and the paper back side (the thickness direction of the contact) orthogonal to the up-and-down direction and the left-right direction is referred to as the front-rear direction. However, these directions differ depending on the posture of the substrate in which the plurality of contacts are disposed and the state of the substrate in the state of the tester. Therefore, for example, the upper and lower directions referred to in this month's month are in a state in which the substrate is placed in a state in which the substrate is mounted with a plurality of contacts, and the state of the device can be turned upside down. (Embodiment) The reference device is used for a semiconductor device 12 such as a flat object to be formed on a semiconductor wafer, and the semiconductor device 12 is used for semiconductors. The component of the component 12::= The fabricated test electrode of the electrical test conductor 12 is electrically connected to the tester. Not yet = in the example: the semiconductor element 12 may be a semiconductor element formed on the semiconductor wafer bonding device 10 and having been cut. In electrical testing using electrical connections, a plurality of semiconductor components 12 are simultaneously electrically tested. When you U enter the electrical connection device 10, including the probe card 16 for the contactor! 4, above: a plurality of connections for the electrical test (four), ... the top of the top of the semiconductor element 12 with the top of the chuck 18 At least the inspection stage platform 20 that moves three-dimensionally in at least rfc--y- and stone universal directions and in the up and down direction is at least! A contact 14; an area sensor 22 such as a bacterium. Plate shape = each contact 14 includes: 1 = arm extending in the up-and-down direction; - a side extension portion 28 from the lower end portion of the attachment portion 24 to the left-right direction, and a plate protruding downward from the front end portion of the Γ 26 The pedestal 4 28 & contacts the contact portion 30 from the lower end of the pedestal portion 28. The plate-like or column-shaped mounting portion 24 is a plate-like mounting portion 24a of a plate at the upper end portion, and a plate-like extension extending from the lower end portion of the base portion 24a to the lower portion of 200940999, which will be described later. Part 24b. The arm portion 26 is extended by the shape of the plate; the direction of the arm is extended by 34 in the left and right direction, and the first and second arms 32 and the connecting portion 36 are: The first and second plates are connected to each other at the rear end portion, and the arm portion 26 is integrated; the second 24hW body is connected to the lower end portion of the document mounting portion 24 (actually, the extension is 4 24b). The #°卩26 is supported by the attachment portion 24 at the proximal end side of the proximal end portion 438, and the end portions of the crotch portion are extended to the right and left, and the second arms 32 and 34 extend from one side of the attachment 4 friend right direction. The pedestal portion 28 is the pedestal portion. The second arm I 28 is a portion extending in the left-right direction and the lower end of the second leg 34 and the lower end portion of the lower end portion 6 of the front end side. The pedestal portion 28 forms a plate-shaped contact sub-body together with the mounting portion "and the cooking portion 26. The mounting portion 24, the arm portion 26, and the 2-8' which collectively form the contact sub-body are disposed to have substantially the same in the front-rear direction. Hook thickness: inch ^ ❹ [shape of the body plate. Therefore, the contact 14 is arranged as a flat plate as shown in FIG. 3 to FIG. 5, and when the contact portion 30 is viewed from below, the contact portion 30 of the position = "8" The lower area around it has six faces 44a, 44b, 44c, 44d, 4 and 44f located around the two. The six faces 44a, 44b, 44c, 44d, 44e, and 44f are inclined with respect to water (imaginary wheel strand extending in the up-and-down direction through the center of the contact portion 30) so that the lower portion becomes the contact portion 3 On the side, the part on the side of the contact portion 30 is the lower side. ^ Wen Wei von 9 200940999 The two sides of the section ... and the opposite side of the contact side and the other side. The other two inclined faces 44 and 44d are in contact with each other with respect to the pin face 44c. The 卩30 is located on the side of the left-right direction and is located on one side of the rear side of the month 1J and on the side of the ^^ side. The other two inclined faces 44e and 44f are located on the other side of the left and right directions with respect to the contact portion 3, respectively, and are located at the front side.
之一側及另一側。 无J 如圖3至圖5所示，接觸部3〇係將其下端設置成按壓 於半導體元件12之雷炻认 之電極的平坦針尖3〇a，且具有以前後方 向為厚度方向之板的形狀。前後方向之接觸部％的厚度尺 寸係㈣方向之其他部位，尤其是較接觸子本體之厚度尺 寸小。 從則後方向觀看補強部30時’接觸部30具有類似等 腰二角形之形狀。因此’與台座部28同樣地，從針尖術 之下方觀看接觸部30時’接觸部3〇包含形成接觸部之 外周面的至少4個面46a，46b，46c及46d。 2個面46a，及46b係分別相對於軸線料位於左方及右 方，並設置成相對水平面（及轴線48)傾斜之傾斜面，以 使愈軸線48側之部位為愈下方，亦即愈下方側之部位為愈 軸線48之側。其他2個面46c，及46d則分別相對於軸線48 位於則方及後方，並設置成往上下方向延伸之垂直面。 相對於此，接觸部30之下端面，亦即針尖3〇a係設置 成與軸線48呈直角之平坦面，以按壓於半導體元件12之 電極。 面 44a 與 44b、44c 與 44d、44e 與 44f、44c 與 44e、44d 200940999 與 44f、46a 與 46b、“ 及46c與46d，分別可形成為 可形成為非對稱。亦即，該等之面彼此亦可相對水 = 軸線48具有不同角度。 十面及 如圖3至圖7所+ ^ ^ , 及台座部28之邊| 亦包含配置於接觸部30 邊界部附近的補強部40。補強部4〇 同於接觸子本體、且且女& μ 係W不 屬材料形成。且具有"於接觸部之材料之知性之金 ❹ 相針：ΓΓ，，補強部40係以虛線之斜線的區域表示。 、匕’在沿圖4之6_6線所得之截面圖 強部40係以向右下之斜線的區域表示。 補 補強部40係設置成藉由將上述等金屬材料以從台座部 8之下端部至接觸部3G、除針尖地以外之其餘所有表面 區域之方式被覆所形成的膜。 亦即’圖示之例中’補強部4G係設成除針尖嫩以外 3(W,觸⑷3〇之其餘所有表面區域、與台座部28卡接觸部 側之所有表面區域。 然而，亦可省略台座部28之面44a，44b,44c 44d，44e 44f之至少一部分的補強部40。 ，強部40以外之接觸子14之其他部位的材料，可列 2⑽、錄/磷合金（m — p)、錄/鶴合金⑽—^、姥州、 :銅、纪/鉛合金（Pd—Co)、及錄/魅合金㈣一 Ni—c〇) 等導電性金屬材料。 補強部40以外之接觸子14之其他部位，亦可以上述 料來製作該等之整體。然而，接觸部3〇亦可以至少不同 11 200940999 於台座部28之材料， 材料來製作。後者之情上座二於台座部28之硬度之 兩連結部36, 38、安 ’、 ’34、 亦可以不同材料來製作。延長。Ρ %相同材料來製作， 度：=，接觸部3〇係以具有高於台座部28之硬 同之導電丨生金屈因此’接觸部3〇係藉由以與接觸部30相 = 部(未圖示），堅固地 m ^ ^ 〇Ρ刀係以露出於台座部28之 ❹ 則後方向之一側面的狀態埋設。 之 若以相同材料來製作補強部4〇以外之接觸子Μ 以外之心 或以相同材料來製作接觸部3〇及補強部40 以外之部位，即容易製造接觸子14。 補強部40之材料係使用與該補強部4〇以外之接觸子 ，、他#位尤其至少不同於接觸子本體之材料的金屬 具有高於接觸部3〇之韌性之金屬材料。 ❹ 睹^ 1 口座部28為鎳製，接觸部30為錄製或鶴製 日手，補強部40之材扭目丨F你m μ 使用鎳以外之金屬材料且具有高於 錢或鎢之韌性之金屬材料。 上述接觸子14可藉由進行複數次以上光阻之曝光及顯 '及將導電J·生材料沉積於藉由顯影所形成之凹處的方 法來製造。 、各接觸子14係在安裝部24之上面，藉由_接等方法 以懸臂樑狀安裝於形成在探針卡Η Τ面之平坦導電性部 (圖示之例中，係以下所說明之安裝焊塾）。 12 200940999 如圖1所示，探針卡16包含：以摻有破璃之環氧樹脂 等電氣絕緣材料所製作之配線基板50、安裝於配線基板5〇 下面之陶瓷基板52、安裝於陶瓷基板52下面之探針基板 54、及安裝於配線基板50上面之補強板56。One side and the other side. No. J as shown in FIG. 3 to FIG. 5, the contact portion 3 is provided with its lower end pressed to be pressed against the flat needle tip 3〇a of the thunder-recognizing electrode of the semiconductor element 12, and having a plate whose thickness is in the front-rear direction. shape. The thickness dimension of the contact portion % in the front-rear direction is the other portion of the (four) direction, in particular, the thickness of the contact sub-body is small. When the reinforcing portion 30 is viewed from the rear direction, the contact portion 30 has a shape similar to the isosceles shape. Therefore, in the same manner as the pedestal portion 28, when the contact portion 30 is viewed from below the needle tip, the contact portion 3 includes at least four faces 46a, 46b, 46c and 46d which form the outer peripheral surface of the contact portion. The two faces 46a and 46b are respectively located on the left and right sides with respect to the axial material, and are disposed to be inclined with respect to the horizontal plane (and the axis 48) so that the portion on the side of the axis 48 is lower, that is, The lower side is the side of the axis 48. The other two faces 46c and 46d are respectively located at the rear and rear with respect to the axis 48, and are provided as vertical faces extending in the up and down direction. On the other hand, the lower end surface of the contact portion 30, that is, the needle tip 3〇a is provided at a flat surface at right angles to the axis 48 to be pressed against the electrode of the semiconductor element 12. The faces 44a and 44b, 44c and 44d, 44e and 44f, 44c and 44e, 44d 200940999 and 44f, 46a and 46b, "and 46c and 46d, respectively, may be formed to be asymmetric. That is, the faces are mutually It is also possible to have different angles with respect to the water axis A. The ten faces and the sides of the pedestal portion 28 as shown in FIGS. 3 to 7 and the side of the pedestal portion 28 also include a reinforcing portion 40 disposed near the boundary portion of the contact portion 30. The reinforcing portion 4 The same as the contact sub-body, and the female & μ system W is not a material formation, and has the "Knowledge of the material of the contact portion", the phase pin: ΓΓ, the reinforcement portion 40 is a region with a dotted line The cross-sectional strong portion 40 obtained along the line 6_6 of Fig. 4 is indicated by a region obliquely to the lower right. The reinforcing strong portion 40 is provided by the above-mentioned metal material from the pedestal portion 8. The film formed by coating the lower end portion to the contact portion 3G and all the surface regions except the needle tip. That is, in the example of the illustration, the reinforcing portion 4G is set to be 3 (W, touch (4) 3 除 except for the needle tip. All the remaining surface areas, all surfaces of the contact portion side with the pedestal portion 28 However, the reinforcing portion 40 of at least a part of the faces 44a, 44b, 44c 44d, 44e 44f of the pedestal portion 28 may be omitted. The material of the other portions of the contact 14 other than the strong portion 40 may be listed as 2 (10), recorded / Conductive metal materials such as phosphorus alloy (m — p), recorded / crane alloy (10)—^, Cangzhou, : copper, Ji/lead alloy (Pd—Co), and recorded/magic alloy (4)-Ni-c〇). The other parts of the contact 14 other than the reinforcing portion 40 may be made of the above materials. However, the contact portion 3 may be made of at least 11 200940999 in the material and material of the pedestal portion 28. The two connecting portions 36, 38, An', '34, which are the hardness of the pedestal portion 28, may be made of different materials. The length is Ρ% made of the same material, the degree: =, the contact portion 3 is higher than The hard portion of the pedestal portion 28 is the same as that of the conductive portion. Therefore, the contact portion 3 is firmly exposed to the pedestal portion 28 by the portion of the contact portion 30 (not shown). Then, the state of one side of the rear direction is buried. If the reinforcing portion is made of the same material, It is easy to manufacture the contact portion 14 by forming a contact portion 3〇 and a portion other than the reinforcing portion 40 with the same material other than the contact Μ. The material of the reinforcing portion 40 is a contact other than the reinforcing portion 4〇. The material of the material of the contact body is particularly different from the metal material of the material of the contact body. The 座 1 ^ 1 seat portion 28 is made of nickel, and the contact portion 30 is a recording or crane hand. The material of the reinforcing portion 40 is twisted. You m μ use a metal material other than nickel and have a metal material higher than the toughness of money or tungsten. The contact 14 can be fabricated by performing exposure of a plurality of photoresists and depositing and depositing a conductive J. raw material in a recess formed by development. Each of the contact members 14 is attached to the upper surface of the mounting portion 24, and is attached to the flat conductive portion formed on the surface of the probe cassette by a splicing method or the like (in the example shown in the drawings, as described below). Install the soldering iron). 12 200940999 As shown in FIG. 1, the probe card 16 includes a wiring board 50 made of an electrical insulating material such as a glass epoxy resin, a ceramic substrate 52 mounted on the lower surface of the wiring board 5, and a ceramic substrate. The probe substrate 54 below the 52 and the reinforcing plate 56 mounted on the upper surface of the wiring substrate 50.
配線基板50與陶瓷基板52具有彼此電氣連接之複數 個内部配線。配線基板50亦於上面之外周緣部具有電氣連 接於未圖示之測試器之測試器焊墊等複數個連接端子。各 連接端子係電氣連接於配線基板50之内部配線。 探針基板54係設置成具有以多層電氣連接於陶曼基板 52之内部配線之複數個内部配線的多層基板，且下面具有 以一對一之形式電氣連接於該等之内部配線的複數個安裝 焊墊。各接觸子14係安裝於安裝焊墊。 補強板56係以不鏽鋼等金屬材料所製作，且與陶瓷基 板52共同防止配線基板5〇之管曲。 夾頭頂部18係將半導體元件12以真空吸附而維持不 月匕移動。檢查載台2G係設置成三維移動機構，使夾頭頂部 18移動於前後方向、尤亡古 „ , _ 门左右方向、及上下方向之3個方向， 且具備使夾頭頂部1 8镇；μ ~ , 現彺上下方向延伸之軸線周圍以角度 旋轉的0移動機構。 如圖1所示，區域感測器22係將光線58加以聚集， 使其指向特定接觸子14之針尖術，以照明針尖施及盆 附近’並接收來自針尖3〇 ，、 訊號。區域感㈣22之^附近之反射光以轉換成電氣 觸/ 之輸出訊號係供應至用以決定特定接 觸子14之座標位置的影像處理裝置。 13 200940999 圖示之例中，光線58相對光轴之張開角度係小於台座 部28相對水平面之傾斜面44a，44b，44c，44d，44e及44f的 傾斜角度。然而，此種張開角度可與台座部28之傾斜面44a 44b，44c，44d，44e及44f的傾斜角度相同，亦可較大。The wiring substrate 50 and the ceramic substrate 52 have a plurality of internal wirings electrically connected to each other. The wiring board 50 also has a plurality of connection terminals such as tester pads electrically connected to a tester (not shown) on the outer peripheral portion of the upper surface. Each of the connection terminals is electrically connected to the internal wiring of the wiring substrate 50. The probe substrate 54 is provided as a multilayer substrate having a plurality of internal wirings electrically connected to the internal wiring of the Tauman substrate 52 in a plurality of layers, and the lower surface has a plurality of mountings electrically connected to the internal wirings in a one-to-one manner. Solder pad. Each contact 14 is mounted to a mounting pad. The reinforcing plate 56 is made of a metal material such as stainless steel, and together with the ceramic substrate 52, prevents the tube of the wiring board 5 from being bent. The top portion 18 of the chuck maintains the semiconductor element 12 in a vacuum adsorption to maintain the movement of the moon. Check that the stage 2G is set to a three-dimensional moving mechanism, so that the top 18 of the chuck is moved in the front-rear direction, the left and right direction, the left and right direction of the door, and the three directions of the up-and-down direction, and has the top of the chuck 1 8; ~, now a 0-moving mechanism that rotates angularly around the axis extending in the up-and-down direction. As shown in Figure 1, the area sensor 22 concentrates the light 58 to point to the tip of the particular contact 14 to illuminate the tip. In the vicinity of the basin, and receiving the reflected light from the tip of the needle 3, the signal. The reflected light near the area (4) 22 is converted into an electrical contact / the output signal is supplied to the image processing device for determining the coordinate position of the specific contact 14 13 200940999 In the illustrated example, the angle of opening of the light ray 58 with respect to the optical axis is smaller than the angle of inclination of the inclined faces 44a, 44b, 44c, 44d, 44e and 44f of the pedestal portion 28 with respect to the horizontal plane. However, such an opening angle The angles of inclination of the inclined faces 44a 44b, 44c, 44d, 44e, and 44f of the pedestal portion 28 may be the same or larger.
上述電氣連接裝置10中’從接觸子14之下方照射至 針尖區域26之光線58，係在接觸部30之外表面及台座部 28之各傾斜面反射，並射入區域感測器22。區域感測器u 之輸出訊號係經影像處理後，使用在用以決定針尖3〇a相對 半導體元件12或測試器之座標位置。 以上述方式將多數個接觸子14配置於探針基板Μ之 探針卡16,係安裝於包含夾頭頂部18、檢查載台2〇、及區 域感測器22之測試器。各接觸子14係在探針卡丨6安裝於 測試器之狀態下，將針尖3〇a始厭^A ^ 种蚵夫30a按壓於焊墊電極，藉此過驅動 力（overdrive )即作用於接觸子。 藉此，接觸子14即在f部26彈性變形，並以針尖地 到除焊墊電極表面之氧化胺 料小 孔化膜以針尖30a刮除電極表面之 ❹ 化膜的作用係依待測試之久主道 ― 、 戎之各+導體兀件12分別反覆進行。 然而’接觸子 14 φ， 中由於補強部40係以不同於接觸 子本體、且具有高於接觸邱 、接觸 钱觸》卩30之韌性之金屬材 因此接觸部30會對因磨洗 化成 作用於接觸子"之不規外之扭轉所產生並以三維 易損傷及破損。 力變得柔軟’使接觸部30不 又，由於補強部 觸部30之表面區域、 4〇係被覆從台座部28之下端部至接 除針尖30a以外之所有表面區域，因 14 200940999 此接觸部30對不規則之力會變得更柔軟而更不易損傷及破 上述接觸子14其台座部28及接觸部3〇雖具有複雜之 構造，不過亦可利用使用曝光技術之微影技術、以及使用 電鍍技術、濺鍍技術、及蒸鍍技術等導電性金屬材料之沉 積技術來製作。 〔接觸子之製造方法的實施例〕 以下’使用圖7至圖8針對接觸子14之製造方法的實 ® 施例作說明。圖7至圖8係表示沿圖6之轴線48從左方觀 看接觸子14時的戴面圖。 首先，如圖7(A)所示，將鎳與銅濺鍍於矽製或 不鏽鋼製之呈板狀之基座構件6〇之面，以形成使製造後之 接觸子易於剝離的薄剝離層（未圖示）。 接著，如圖7(B)所示，藉由於基座構件6〇 (實際上係 剝離層）之上塗布光阻62而形成為層狀。 ❿ 接著，如圖7(C)所示，光阻62係在覆蓋光罩之狀態下 進行曝光，之後再經顯影處理，其中，該光罩係用以將至 少仿照接觸部30之凹處64形成於光阻62。 接著，如圖7(D)所示，藉由電鍍、濺鍍、蒸鍍等沉積 技術將具有既定厚度尺寸之犧牲層66形成於凹處64。 接著，如圖7(E)所示，在除去光阻62後，藉由將光阻 68塗布於基座構件60及犧牲層66之上而形成為層狀。 接著，如圖7(F)所示，光阻68係在將光罩覆蓋於光阻 68之狀態下進行曝光，之後再經顯影處理。藉此凹處7〇 15 200940999 即形成於先阻68。 著如圖8(A)所示，具有類似於前端部72之形狀的 曲柄狀第1補強層74 ’即藉由電鑛、錢、蒸鍍等沉積技 術於凹處70形成為曲柄狀。第ι補強層係使用上述導 電性金屬材料並形成為層狀。 用以形成第1補強層74之沉積技術，係使用鉑、鎳等 較接觸。卩3G所使用之材料具有更優異之勤性且不同於接觸 子本體的金屬材料。然而，第i補強層74亦可為將分別具 有述特丨生之複數種金屬材料予以積層之2層以上的金屬 材料層。 ★接著’如圖8(B)所示，前端部72係藉由電鍍、錢鑛、 蒸鍍等沉積技術形成於凹處7〇内之第i補強層74之上。 前端部72係'使用姥⑽、嫣（w)等高硬度導電性金屬材料而 形成為類似於第1補強層74之曲柄狀。 如圖8(B)所示，凹處70係仿照接觸子14之前端部72。 前端部72係形成接觸部30之部位72a及形成台座部“之 一部分且一體接續於接觸部30且結合於台座部28之其餘 部位的部位72b，並對應補強部4〇之一部分的配置區域。' 接著，如圖8(C)所示，在除去光阻68後，藉由將光阻 74塗布於基座構件60、犧牲層66、及前端部72之上而形 成為層狀。 接著，如圖8(D)所示，光阻74係在將光罩覆蓋於光阻 74之狀態下進行曝光’之後再經顯影處理。藉此，仿照接 觸子本體之凹處76即形成於光阻74。 200940999 接著，如圖8(E)所示，仿照接觸子本體之本體部8〇， P藉由電鑛、賤鑛、蒸鑛等沉積技術而形成於凹處76，其 中該接觸子本體包含與前端冑62之部位72b —起具有台 座部28之作用的部位。 本體4 80係使用鎳/填合金（Ni — P)、鎳/鎢合金（Ni-W)、錄（Rh)、碟青銅、鎳⑽、把/銘合金（Pd-C。）、及把/ 鎳/姑α金（Pd — Ni — Co)等韌性較接觸部3〇優異之導電性 金屬材料所形成。 ❹The light ray 58 irradiated from the lower side of the contact portion 14 to the tip end region 26 in the electrical connecting device 10 is reflected on the outer surface of the contact portion 30 and the inclined surface of the pedestal portion 28, and is incident on the area sensor 22. The output signal of the area sensor u is image processed and used to determine the coordinate position of the tip 3〇a relative to the semiconductor component 12 or the tester. In the above manner, a plurality of contact members 14 are disposed on the probe card 16 of the probe substrate, and are mounted on a tester including the chuck top 18, the inspection stage 2, and the area sensor 22. Each of the contacts 14 is pressed against the pad electrode in a state where the probe cartridge 6 is attached to the tester, and the overdrive is applied to the pad electrode 3a. Contact the child. Thereby, the contact 14 is elastically deformed in the f portion 26, and the action of the oxidized film which scrapes off the surface of the electrode with the needle tip 30a by the needle tip to the oxidized amine small pore-forming film on the surface of the pad electrode is determined according to the test. The long-distance main road, the 戎 各 each + conductor element 12 are repeated. However, in the contact portion 14 φ, since the reinforcing portion 40 is made of a metal material different from the contact sub-body and having a toughness higher than that of the contact portion, the contact portion 30, the contact portion 30 acts on the grinding process. The irreversible torsion of the contact is caused by three-dimensional damage and damage. The force becomes softer 'the contact portion 30 is not closed, because the surface area of the reinforcing portion contact portion 30, the four-way coating covers all the surface areas from the lower end portion of the pedestal portion 28 to the removal of the needle tip 30a, since 14 200940999 this contact portion 30 pairs of irregular forces will become softer and less susceptible to damage and break the contact 14. Although the pedestal 28 and the contact portion 3 have a complicated structure, they can also utilize lithography using exposure technology and use. It is produced by deposition techniques of conductive metal materials such as electroplating technology, sputtering technology, and vapor deposition technology. [Embodiment of Manufacturing Method of Contact Member] Hereinafter, a practical example of the manufacturing method of the contact member 14 will be described using Figs. 7 to 8 . 7 to 8 are perspective views showing the contact 14 viewed from the left along the axis 48 of Fig. 6. First, as shown in Fig. 7(A), nickel and copper are sputtered on the surface of the plate-like base member 6A made of tantalum or stainless steel to form a thin peeling layer which facilitates peeling of the contact after manufacture. (not shown). Next, as shown in Fig. 7(B), the photoresist 62 is coated on the base member 6 (actually, the peeling layer) to form a layer. ❿ Next, as shown in FIG. 7(C), the photoresist 62 is exposed in a state of covering the reticle, and then subjected to development processing, wherein the reticle is used to at least resemble the recess 64 of the contact portion 30. Formed on the photoresist 62. Next, as shown in Fig. 7(D), a sacrificial layer 66 having a predetermined thickness dimension is formed in the recess 64 by a deposition technique such as plating, sputtering, vapor deposition or the like. Next, as shown in Fig. 7(E), after the photoresist 62 is removed, the photoresist 68 is applied to the base member 60 and the sacrificial layer 66 to form a layer. Next, as shown in Fig. 7(F), the photoresist 68 is exposed while the photomask is covered with the photoresist 68, and then subjected to development processing. By this recess 7〇 15 200940999 is formed in the pre-resistance 68. As shown in Fig. 8(A), the crank-shaped first reinforcing layer 74' having a shape similar to the shape of the front end portion 72 is formed into a crank shape in the recess 70 by deposition techniques such as electric ore, money, and vapor deposition. The first reinforced layer is formed into a layered shape using the above-described conductive metal material. The deposition technique for forming the first reinforcing layer 74 is in contact with platinum, nickel, or the like. The material used in 卩3G has a more excellent workability and is different from the metal material of the contact sub-body. However, the i-th reinforcing layer 74 may be a metal material layer of two or more layers in which a plurality of metal materials each having a specific number of layers are laminated. ★ Next, as shown in Fig. 8(B), the front end portion 72 is formed on the i-th reinforcing layer 74 in the recess 7 by a deposition technique such as plating, money ore, or vapor deposition. The distal end portion 72 is formed in a crank shape similar to the first reinforcing layer 74 by using a high-hardness conductive metal material such as 姥(10) or 嫣(w). As shown in Fig. 8(B), the recess 70 follows the front end portion 72 of the contact member 14. The distal end portion 72 is a portion 72a where the contact portion 30 is formed, and a portion 72b that forms one portion of the pedestal portion and is integrally connected to the contact portion 30 and joined to the rest of the pedestal portion 28, and corresponds to an arrangement region of one portion of the reinforcing portion 4''. Then, as shown in FIG. 8(C), after the photoresist 68 is removed, the photoresist 74 is applied to the base member 60, the sacrificial layer 66, and the tip end portion 72 to form a layer. As shown in FIG. 8(D), the photoresist 74 is subjected to development processing after exposure of the photomask to the photoresist 74. Thereafter, the recess 76 in the contact sub-body is formed in the photoresist. 74. 200940999 Next, as shown in FIG. 8(E), in accordance with the body portion 8〇 of the contact sub-body, P is formed in the recess 76 by deposition techniques such as electric ore, antimony ore, and steaming, wherein the contact sub-body The portion including the portion 72b of the front end 62 has a function of the pedestal portion 28. The main body 4 80 is made of nickel/filled alloy (Ni-P), nickel/tungsten alloy (Ni-W), recorded (Rh), and dish. Bronze, nickel (10), put / Ming alloy (Pd-C.), and / nickel / gu α gold (Pd - Ni - Co) and other toughness The 3〇 excellent conductive metal material is formed. ❹
接者，如圖9(A)所示，在除去光阻74後，藉由將光阻 82塗布於基座構件6〇、犧牲層66、前端部π、及本體部 80之上而形成為層狀。 接著’如圖9(B)所示，光阻82係進行曝光後再經顯影 處理。藉此’凹處84即形成於光阻82。與圖8(A)及⑻所 示之凹處70同樣地，凹處84係仿照接觸子以前端部72。 接著，如圖9(C)所示，具有與第1補強層74大致為對 稱形狀之曲柄狀第2補強層86，係藉由電鍍、濺鑛、蒸錢 等沉積技術於凹處84形成為曲柄狀。第2補強層86係二 用如第1補強層74之導電性金屬材料並形成為層狀。 與第！補強層74同樣地，用以形成第2補強層％之 沉積技術，係使用鉑、鎳等較接觸部3〇所使用之材 更優異之勒性且不同於接觸子本體的金屬#料。帛2補 層86亦可設置成將複數種金屬材料予以積層 金屬材料層。 增乂上的 接著’如圖9(D)所示’除去光阻82 17 200940999 接著，如圖9(E)所干，& t 也姐 ’、藉由餘刻除去犧牲層66並從基 座構件60剝取已完成之接觸子14。 如圖2至圖7所示，卜H、+从田 邱达之 '纟°果’即可製造包含補強 40之接觸子Μ，其 、°Λ補強0卩40係藉由將既定金屬材 尖從。座部28之下端部至接觸部3q之表面區域、除針 尖0a以外之其餘所有表面區域之方式被復所形成。 如先前所述’以上述方式制 々式所製造之補強部40係設成除 針尖30a以外之接觸部 ❹ 餘所有表面區域、與台座部 中接觸部30侧之所有表面區域。 對應台座部20、接觸部3〇之左女 之左右方向側面、及台座部 U向下之面之補強部4〇的 位’例如在圖9(B)及（〇之步 驟中’可將凹處84所料豳— 應之。卩位的尺寸較接觸子14所對 應^位的尺寸加大第2保護層％厚度之分量，並藉由使 既疋金屬材料沉積於該凹處84來形成。 ^ 9(c則9⑻所^在μ上述方 觸子中，第2補強層86之 ^接 〇 部位，係從本體部8〇突出。第補強層74相反侧之 臂部26亦可具備單— 、鱼紝加1 # 32或34。此時，亦可省略 連'•口36，38，而將針尖區祕& 32 ^ 34 ^ ^ , 〇 '、該刖端侧一體形成於臂 次34之則端側，並將延 之後端側。 長°”6體形成於臂32或34 補強部40亦可至4、w 4 * 及台座部28之至„、邊心 形式配置於對接觸部3〇 磨洗方二附近之厚度方向之兩面呈直角之 磨洗方向的兩面》此種膜 且月心 禋膜了藉由在磨洗方向之兩面至少進 18 200940999 行2次微影技術與沉積技術來形成。 本發明不僅可使用於形成在半導體晶圓之未切斷積體 電路專電子元件之電氣測試’亦可使用於已切斷之積體 路等電子元件之電氣測試。 本發明並不限於上述實施例，在不超出該意旨下可作 各種變更。 【圖式簡單說明】 圖1表示本發明之電氣連接裝置之一實施例。 圖2係表示本發明之接觸子之一實施例的前視圖。 圖3係放大表示圖2所示之接觸子之前端部分3的前 視圖。 圖4係從圖3左方觀看圖3所示之前端部分的右側視 圖。 圖5係圖3所示之前端部分的仰視圖。 圖6係沿圖4之6 — 6線所得的截面圖。 圖7(A)〜（F)係用以說明本發明之接觸子之製造方法的 步驟圖。 圖8(A)〜（E)係用以s兒明接觸子之製造方法之接續圖7 的步驟圖。 圖9(A)〜（E)係用以說明接觸子之製造方法之接續圖8 的步驟圖。 【主要元件符號說明】 200940999 10 電氣連接裝置 12 半導體元件（被檢查體） 14 接觸子 16 探針卡 18 爽頭頂部 20 檢查載台 22 區域感測器 24 安裝部 26 臂部 28 台座部 30 接觸部 30a 針尖 40 補強部 ❹ 20As shown in FIG. 9(A), after the photoresist 74 is removed, the photoresist 82 is applied to the base member 6A, the sacrificial layer 66, the tip end portion π, and the body portion 80, thereby forming Layered. Next, as shown in Fig. 9(B), the photoresist 82 is subjected to exposure and then subjected to development processing. Thereby, the recess 84 is formed in the photoresist 82. Similarly to the recess 70 shown in Figs. 8(A) and (8), the recess 84 is a contact portion to the front end portion 72. Next, as shown in FIG. 9(C), the crank-shaped second reinforcing layer 86 having a substantially symmetrical shape with the first reinforcing layer 74 is formed in the recess 84 by a deposition technique such as plating, sputtering, or steaming. Crank-like. The second reinforcing layer 86 is formed of a conductive metal material such as the first reinforcing layer 74 and formed into a layered shape. With the first! Similarly, the reinforcing layer 74 is used to form a second reinforcing layer % deposition technique, and is preferably made of a material other than the contact portion 3 such as platinum or nickel, and is different from the metal material of the contact sub-body. The 帛2 patch layer 86 may also be provided to laminate a plurality of metal materials into a layer of a metal material. Subsequent to the enhancement, as shown in Fig. 9(D), the photoresist is removed. 82 17 200940999 Next, as shown in Fig. 9(E), & t is also used to remove the sacrificial layer 66 from the base. The seat member 60 strips the completed contact 14 . As shown in Fig. 2 to Fig. 7, the H and + from the "纟° fruit" of Tian Qiuda can be used to manufacture a contact Μ containing reinforced 40, which is a 金属 强 卩 卩 卩 系 系 系 系 系 系 系 系 系From. The surface portion of the lower portion of the seat portion 28 to the surface portion of the contact portion 3q and all other surface regions except the needle tip 0a are formed in a manner. As described above, the reinforcing portion 40 manufactured by the above-described manufacturing method is provided with all the surface regions of the contact portion except the needle tip 30a and all the surface regions of the contact portion 30 side of the pedestal portion. Corresponding to the pedestal portion 20, the side surface of the left and right sides of the left side of the contact portion 3, and the position of the reinforcing portion 4 of the lower surface of the pedestal U, for example, in Fig. 9(B) and (in the step of 〇) The size of the 卩 position is increased by the size of the corresponding position of the contact 14 by the thickness of the second protective layer, and is formed by depositing the bismuth metal material in the recess 84. ^ 9 (c is 9 (8) ^ in the above-mentioned square contact, the second reinforcing layer 86 is connected to the body portion 8 。. The arm portion 26 on the opposite side of the reinforcing layer 74 may also have a single —, the fish 纴 add 1 # 32 or 34. At this time, you can also omit the '• mouth 36, 38, and the tip of the tip area & 32 ^ 34 ^ ^, 〇 ', the end of the 一体 end formed in the arm 34 is the end side, and will be extended to the rear end side. The length "6" body is formed on the arm 32 or 34. The reinforcing portion 40 may also be 4, w 4 * and the pedestal portion 28 to „, the side core form is arranged in the contact Part 3: The two sides in the thickness direction near the side of the grinding square are two sides of the grinding direction at right angles. The film and the pericardium are made up of at least 18 200940999 twice on both sides of the grinding direction. The lithography technique and the deposition technique are formed. The invention can be used not only for the electrical test of the electronic component of the uncut integrated circuit formed on the semiconductor wafer, but also for the electrical component of the electronic component such as the cut integrated circuit. The present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit and scope of the invention. Fig. 1 shows an embodiment of the electrical connecting device of the present invention. Fig. 2 shows the contact of the present invention. 3 is a front view of the front end portion 3 of the contact shown in Fig. 2. Fig. 4 is a right side view of the front end portion shown in Fig. 3 as viewed from the left side of Fig. 3. 5 is a bottom view of the front end portion shown in Fig. 3. Fig. 6 is a cross-sectional view taken along line 6-6 of Fig. 4. Fig. 7 (A) to (F) are for explaining a method of manufacturing the contact of the present invention. Figure 8 (A) ~ (E) is a step diagram of the subsequent method of manufacturing the contactor of Figure s. Figure 9 (A) ~ (E) is used to illustrate the manufacturing method of the contact Follow the steps in Figure 8. [Main component symbol description] 200940999 10 Electrical Bonding the semiconductor element 12 (to be inspected) 14 contacts the top 16 of the probe card 18 sub-cool stage 20 checks head region 22 mounting portion 24 of the arm 28 the sensor device 26 contacts the seat portion 30 portion 40 tip 30a ❹ The reinforcing portion 20