JP2009216562A5 - - Google Patents
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- Publication number
- JP2009216562A5 JP2009216562A5 JP2008060927A JP2008060927A JP2009216562A5 JP 2009216562 A5 JP2009216562 A5 JP 2009216562A5 JP 2008060927 A JP2008060927 A JP 2008060927A JP 2008060927 A JP2008060927 A JP 2008060927A JP 2009216562 A5 JP2009216562 A5 JP 2009216562A5
- Authority
- JP
- Japan
- Prior art keywords
- contact
- pedestal
- needle tip
- contact portion
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 61
- 229920002120 photoresistant polymer Polymers 0.000 description 28
- 238000012360 testing method Methods 0.000 description 18
- 239000000523 sample Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 238000007687 exposure technique Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 239000010948 rhodium Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910001096 P alloy Inorganic materials 0.000 description 2
- 229910021069 Pd—Co Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008060927A JP5438908B2 (ja) | 2008-03-11 | 2008-03-11 | 電気的試験用接触子、これを用いた電気的接続装置及び接触子の製造方法 |
| US12/388,394 US7816931B2 (en) | 2008-03-11 | 2009-02-18 | Contact for electrical test, electrical connecting apparatus using it, and method of producing the contact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008060927A JP5438908B2 (ja) | 2008-03-11 | 2008-03-11 | 電気的試験用接触子、これを用いた電気的接続装置及び接触子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009216562A JP2009216562A (ja) | 2009-09-24 |
| JP2009216562A5 true JP2009216562A5 (enExample) | 2011-03-24 |
| JP5438908B2 JP5438908B2 (ja) | 2014-03-12 |
Family
ID=41062335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008060927A Active JP5438908B2 (ja) | 2008-03-11 | 2008-03-11 | 電気的試験用接触子、これを用いた電気的接続装置及び接触子の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7816931B2 (enExample) |
| JP (1) | JP5438908B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009270880A (ja) * | 2008-05-02 | 2009-11-19 | Micronics Japan Co Ltd | 電子デバイスの電気的試験用接触子、その製造方法及びプローブ組立体 |
| JP5530124B2 (ja) * | 2009-07-03 | 2014-06-25 | 株式会社日本マイクロニクス | 集積回路の試験装置 |
| DE102012224424A1 (de) | 2012-12-27 | 2014-07-17 | Robert Bosch Gmbh | Sensorsystem und Abdeckvorrichtung für ein Sensorsystem |
| JP7353859B2 (ja) * | 2019-08-09 | 2023-10-02 | 株式会社日本マイクロニクス | 電気的接触子及び電気的接続装置 |
| CN111585145B (zh) * | 2020-06-01 | 2021-02-12 | 渭南高新区木王科技有限公司 | 一种高精密探针压接机 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3650311B2 (ja) | 2000-06-15 | 2005-05-18 | 東京エレクトロン株式会社 | コンタクトピン及びプローブカード |
| JP2006119024A (ja) * | 2004-10-22 | 2006-05-11 | Tokyo Electron Ltd | プローブおよびその製造方法 |
| WO2006075408A1 (ja) * | 2005-01-14 | 2006-07-20 | Kabushiki Kaisha Nihon Micronics | 通電試験用プローブ |
| US7679389B2 (en) * | 2005-03-07 | 2010-03-16 | Kabushiki Kaisha Nihon Micronics | Probe for electrical test and electrical connecting apparatus using it |
| KR100664443B1 (ko) * | 2005-08-10 | 2007-01-03 | 주식회사 파이컴 | 캔틸레버형 프로브 및 그 제조 방법 |
| TW200815763A (en) * | 2006-09-26 | 2008-04-01 | Nihon Micronics Kabushiki Kaisha | Electrical test probe and electrical test probe assembly |
-
2008
- 2008-03-11 JP JP2008060927A patent/JP5438908B2/ja active Active
-
2009
- 2009-02-18 US US12/388,394 patent/US7816931B2/en active Active
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