JP2009164571A - 炭化ケイ素半導体装置およびその製造方法 - Google Patents
炭化ケイ素半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 161
- 238000000034 method Methods 0.000 claims description 48
- 239000012535 impurity Substances 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 27
- 239000010410 layer Substances 0.000 description 378
- 239000007789 gas Substances 0.000 description 38
- 230000015556 catabolic process Effects 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 23
- 238000005530 etching Methods 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000004020 conductor Substances 0.000 description 12
- 230000007774 longterm Effects 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 238000005275 alloying Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004854 X-ray topography Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
【解決手段】半導体装置1は、面方位{0001}に対しオフ角が50°以上65°以下である、炭化ケイ素からなる基板2と、バッファ層21と、活性層(エピタキシャル層3、p型層4、およびn+領域5、6)とを備える。バッファ層21は、基板2上に形成され、炭化ケイ素からなる。活性層は、バッファ層21上に形成され、炭化ケイ素からなる。活性層におけるマイクロパイプ密度は基板2におけるマイクロパイプ密度より低い。また、活性層における、バーガーズベクトルの向きが[0001]である転位の密度は、基板2における当該転位の密度より高い。
【選択図】図1
Description
図1は、本発明による半導体装置を示す断面模式図である。図1を参照して、本発明による半導体装置の実施の形態1を説明する。
図3は、本発明による半導体装置の実施の形態2を示す断面模式図である。図3を参照して、本発明による半導体装置の実施の形態2を説明する。
図4は、本発明による半導体装置の実施の形態3を示す断面模式図である。図4を参照して、本発明による半導体装置の実施の形態3を説明する。
本発明の効果を確認するため、以下のような実験を行なった。
実施例の試料:
実施例の試料として、主表面の面方位が(03−38)である4Hポリタイプの炭化ケイ素基板(SiC基板)を準備した。SiC基板のサイズは2インチであり、当該基板におけるマイクロパイプ密度は100cm−2であった。また、当該基板におけるバーガーズベクトルの向きが[0001]である転位の密度は1.5×103cm−2であった。
まず、実施例の試料と同様のSiC基板を準備した。このSiC基板上に、SiCからなるバッファ層を形成した。バッファ層の厚みは実施例の試料におけるバッファ層の厚みと同じとした。ただし、このバッファ層の成膜条件は実施例1における成膜条件と異なる。具体的には、成膜条件として、SiH4の流量を7.5sccm、C3H8の流量を5sccm、基板温度を1550℃、成長時間を10分とした。つまり、バッファ層を形成する工程におけるC/Si比の値は2である。
まず、実施例の試料と同様のSiC基板を準備した。このSiC基板上に、バッファ層を形成せず直接活性層としてのSiC層を直接形成した。活性層の厚みは実施例における活性層の厚みと同様とした。また、このときの成膜条件としては、SiH4の流量を7.5sccm、C3H8の流量を5sccm、基板温度を1550℃、成長時間を90分とした。
基板のマイクロパイプ密度の測定方法としては、KOHエッチングによるエッチピット観察という方法を用いた。
実施例における活性層のマイクロパイプ密度は0cm−2であり、また、バーガーズベクトルの向きが[0001]である転位の密度は1.8×103cm−2であった。
本発明の効果を確認するため、さらに以下のような実験を行なった。
上述した実施例1における実施例の試料および比較例2の試料と同様の製造方法を用いて、実施例の試料および比較例の試料を準備した。
基板におけるマイクロパイプ密度の測定方法としては、KOHエッチングによるエッチピット観察という方法を用いた。また、基板におけるバーガーズベクトルの向きが[11−20]で、転位線の向きが実質的に[11−20]である基底面転位の密度の測定方法、および基板におけるバーガーズベクトルの向きが[11−20]で、転位線の向きが実質的に[0001]である刃状転位の密度の測定方法としても、KOHエッチングによるエッチピット観察という手法を用いた。
(結果)
実施例における基板のマイクロパイプ密度は100cm−2であり、基底面転位密度は2.5×103cm−2であり、刃状転位密度は1.1×104cm−2であった。また、実施例におけるバッファ層のマイクロパイプ密度は0cm−2であり、基底面転位密度は1.5×102cm−2であり、刃状転位密度は1.3×104cm−2であった。また、実施例における活性層のマイクロパイプ密度は0cm−2であり、基底面転位密度は1.5×102cm−2であり、刃状転位密度は1.3×104cm−2であった。
Claims (10)
- 面方位{0001}に対しオフ角が50°以上65°以下である、炭化ケイ素からなる基板と、
前記基板上に形成され、炭化ケイ素からなるバッファ層と、
前記バッファ層上に形成され、炭化ケイ素からなる活性層とを備え、
前記活性層におけるマイクロパイプ密度は前記基板におけるマイクロパイプ密度より低く、
前記活性層における、バーガーズベクトルの向きが[0001]である転位の密度は、前記基板における前記転位の密度より高い、炭化ケイ素半導体装置。 - 前記活性層におけるマイクロパイプ密度は1cm-2以下である、請求項1に記載の炭化ケイ素半導体装置。
- 前記活性層における、バーガーズベクトルの向きが[11−20]で、転位線の向きが実質的に[11−20]である基底面転位の密度は、前記基板における前記基底面転位の密度よりも低く、バーガーズベクトルの向きが[11−20]で、転位線の向きが実質的に[0001]である刃状転位の密度は、前記基板における前記刃状転位の密度よりも高い、請求項1または2に記載の炭化ケイ素半導体装置。
- 前記基板のオフ方位が<11−20>方向±5°の範囲である、請求項1〜3のいずれか1項に記載の炭化ケイ素半導体装置。
- 前記基板のオフ方位が<01−10>方向±5°の範囲である、請求項1〜3のいずれか1項に記載の炭化ケイ素半導体装置。
- 前記基板の主表面の面方位が、面方位{03−38}に対するオフ角が−3°以上+5°以下である、請求項5に記載の炭化ケイ素半導体装置。
- 前記基板の不純物濃度は、前記バッファ層の不純物濃度より高く、
前記バッファ層の不純物濃度は、前記活性層の不純物濃度より高い、請求項1〜6のいずれか1項に記載の炭化ケイ素半導体装置。 - 面方位{0001}に対しオフ角が50°以上65°以下である、炭化ケイ素からなる基板を準備する工程と、
前記基板上に、炭化ケイ素からなるバッファ層を形成する工程と、
前記バッファ層上に活性層を形成する工程とを備え、
前記バッファ層を形成する工程では、前記バッファ層におけるマイクロパイプ密度が前記基板におけるマイクロパイプ密度より低く、前記バッファ層における、バーガーズベクトルの向きが[0001]である転位の密度は、前記基板における前記転位の密度より高くなる成膜条件で、前記バッファ層が形成される、炭化ケイ素半導体装置の製造方法。 - 前記バッファ層を形成する工程では、前記活性層における、バーガーズベクトルの向きが[11−20]で、転位線の向きが実質的に[11−20]である基底面転位の密度は、前記基板における前記基底面転位の密度よりも低く、バーガーズベクトルの向きが[11−20]で、転位線の向きが実質的に[0001]である刃状転位の密度は、前記基板における前記刃状転位の密度よりも高くなる成膜条件で、前記バッファ層が形成される、請求項8に記載の炭化ケイ素半導体装置の製造方法。
- 前記バッファ層を形成する工程における前記成膜条件では、前記バッファ層を形成するための原料ガスにおける珪素原子に対する炭素原子の割合であるC/Si比の値が、前記活性層を形成する工程における前記C/Si比の値より小さくなるように、前記原料ガスの組成および流量が決定されている、請求項8または9に記載の炭化ケイ素半導体装置の製造方法。
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