JP2009158947A5 - - Google Patents

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Publication number
JP2009158947A5
JP2009158947A5 JP2008307050A JP2008307050A JP2009158947A5 JP 2009158947 A5 JP2009158947 A5 JP 2009158947A5 JP 2008307050 A JP2008307050 A JP 2008307050A JP 2008307050 A JP2008307050 A JP 2008307050A JP 2009158947 A5 JP2009158947 A5 JP 2009158947A5
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JP
Japan
Prior art keywords
semiconductor film
manufacturing
donor
impurity element
film
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JP2008307050A
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English (en)
Japanese (ja)
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JP2009158947A (ja
JP5101471B2 (ja
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Priority claimed from JP2008307050A external-priority patent/JP5101471B2/ja
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Publication of JP2009158947A5 publication Critical patent/JP2009158947A5/ja
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Publication of JP5101471B2 publication Critical patent/JP5101471B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008307050A 2007-12-03 2008-12-02 微結晶半導体膜及び薄膜トランジスタの作製方法 Expired - Fee Related JP5101471B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008307050A JP5101471B2 (ja) 2007-12-03 2008-12-02 微結晶半導体膜及び薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007312670 2007-12-03
JP2007312670 2007-12-03
JP2008307050A JP5101471B2 (ja) 2007-12-03 2008-12-02 微結晶半導体膜及び薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2009158947A JP2009158947A (ja) 2009-07-16
JP2009158947A5 true JP2009158947A5 (cg-RX-API-DMAC10.html) 2011-12-22
JP5101471B2 JP5101471B2 (ja) 2012-12-19

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JP2008307050A Expired - Fee Related JP5101471B2 (ja) 2007-12-03 2008-12-02 微結晶半導体膜及び薄膜トランジスタの作製方法

Country Status (3)

Country Link
US (1) US8187956B2 (cg-RX-API-DMAC10.html)
JP (1) JP5101471B2 (cg-RX-API-DMAC10.html)
KR (1) KR101534099B1 (cg-RX-API-DMAC10.html)

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