JP2009152577A5 - - Google Patents
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- Publication number
- JP2009152577A5 JP2009152577A5 JP2008301981A JP2008301981A JP2009152577A5 JP 2009152577 A5 JP2009152577 A5 JP 2009152577A5 JP 2008301981 A JP2008301981 A JP 2008301981A JP 2008301981 A JP2008301981 A JP 2008301981A JP 2009152577 A5 JP2009152577 A5 JP 2009152577A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- oxide
- photoelectric conversion
- conversion device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 31
- 239000012535 impurity Substances 0.000 claims 19
- 238000006243 chemical reaction Methods 0.000 claims 17
- 239000013078 crystal Substances 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 150000002894 organic compounds Chemical class 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims 2
- -1 aromatic amine compound Chemical class 0.000 claims 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims 2
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 claims 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims 2
- 238000010884 ion-beam technique Methods 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 2
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 229910003449 rhenium oxide Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 238000003776 cleavage reaction Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000007017 scission Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008301981A JP5577030B2 (ja) | 2007-11-29 | 2008-11-27 | 光電変換装置及びその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007308488 | 2007-11-29 | ||
| JP2007308488 | 2007-11-29 | ||
| JP2008301981A JP5577030B2 (ja) | 2007-11-29 | 2008-11-27 | 光電変換装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009152577A JP2009152577A (ja) | 2009-07-09 |
| JP2009152577A5 true JP2009152577A5 (enExample) | 2012-01-26 |
| JP5577030B2 JP5577030B2 (ja) | 2014-08-20 |
Family
ID=40674508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008301981A Expired - Fee Related JP5577030B2 (ja) | 2007-11-29 | 2008-11-27 | 光電変換装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20090139558A1 (enExample) |
| JP (1) | JP5577030B2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2075850A3 (en) * | 2007-12-28 | 2011-08-24 | Semiconductor Energy Laboratory Co, Ltd. | Photoelectric conversion device and manufacturing method thereof |
| US8017429B2 (en) * | 2008-02-19 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
| US20120138134A1 (en) * | 2009-08-26 | 2012-06-07 | Makoto Higashikawa | Stack-type photovoltaic element and method of manufacturing stack-type photovoltaic element |
| US8704083B2 (en) * | 2010-02-11 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and fabrication method thereof |
| JP5247748B2 (ja) * | 2010-03-17 | 2013-07-24 | 三菱電機株式会社 | 光電変換装置、及び光電変換装置の製造方法 |
| US8975509B2 (en) | 2010-06-07 | 2015-03-10 | The Governing Council Of The University Of Toronto | Photovoltaic devices with multiple junctions separated by a graded recombination layer |
| JP5753445B2 (ja) | 2010-06-18 | 2015-07-22 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
| US20120024357A1 (en) * | 2010-08-02 | 2012-02-02 | Yao-Tung Chen | Laminated solar-cell module |
| TWI436490B (zh) * | 2010-09-03 | 2014-05-01 | Univ Tatung | 光伏電池結構 |
| JP5421218B2 (ja) * | 2010-10-26 | 2014-02-19 | 出光興産株式会社 | 光電変換装置、及び光電変換装置の製造方法 |
| KR20120095790A (ko) * | 2011-02-21 | 2012-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 장치 |
| US20120211065A1 (en) * | 2011-02-21 | 2012-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US9159939B2 (en) | 2011-07-21 | 2015-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| US9112086B2 (en) | 2011-11-10 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| JP6108858B2 (ja) | 2012-02-17 | 2017-04-05 | 株式会社半導体エネルギー研究所 | ｐ型半導体材料および半導体装置 |
| JP5769668B2 (ja) * | 2012-06-12 | 2015-08-26 | 三菱電機株式会社 | 太陽電池の製造方法および太陽電池製造装置 |
| KR102083249B1 (ko) * | 2012-07-19 | 2020-03-02 | 히타치가세이가부시끼가이샤 | 패시베이션층 형성용 조성물, 패시베이션층이 형성된 반도체 기판, 패시베이션층이 형성된 반도체 기판의 제조 방법, 태양 전지 소자, 태양 전지 소자의 제조 방법 및 태양 전지 |
| JP6139731B2 (ja) * | 2016-03-23 | 2017-05-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
| KR102690582B1 (ko) * | 2023-05-31 | 2024-07-30 | 세종대학교산학협력단 | 텐덤 태양전지 |
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-
2008
- 2008-11-19 US US12/273,653 patent/US20090139558A1/en not_active Abandoned
- 2008-11-27 JP JP2008301981A patent/JP5577030B2/ja not_active Expired - Fee Related
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