JP5577030B2 - 光電変換装置及びその製造方法 - Google Patents

光電変換装置及びその製造方法 Download PDF

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JP5577030B2
JP5577030B2 JP2008301981A JP2008301981A JP5577030B2 JP 5577030 B2 JP5577030 B2 JP 5577030B2 JP 2008301981 A JP2008301981 A JP 2008301981A JP 2008301981 A JP2008301981 A JP 2008301981A JP 5577030 B2 JP5577030 B2 JP 5577030B2
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layer
semiconductor layer
oxide
unit cell
electrode
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JP2009152577A5 (enExample
JP2009152577A (ja
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舜平 山崎
寿雄 池田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
JP2008301981A 2007-11-29 2008-11-27 光電変換装置及びその製造方法 Expired - Fee Related JP5577030B2 (ja)

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JP2008301981A JP5577030B2 (ja) 2007-11-29 2008-11-27 光電変換装置及びその製造方法

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JP2007308488 2007-11-29
JP2007308488 2007-11-29
JP2008301981A JP5577030B2 (ja) 2007-11-29 2008-11-27 光電変換装置及びその製造方法

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JP2009152577A JP2009152577A (ja) 2009-07-09
JP2009152577A5 JP2009152577A5 (enExample) 2012-01-26
JP5577030B2 true JP5577030B2 (ja) 2014-08-20

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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
US8017429B2 (en) * 2008-02-19 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
WO2011024867A1 (ja) * 2009-08-26 2011-03-03 シャープ株式会社 積層型光起電力素子および積層型光起電力素子の製造方法
US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
JP5247748B2 (ja) * 2010-03-17 2013-07-24 三菱電機株式会社 光電変換装置、及び光電変換装置の製造方法
US8975509B2 (en) 2010-06-07 2015-03-10 The Governing Council Of The University Of Toronto Photovoltaic devices with multiple junctions separated by a graded recombination layer
JP5753445B2 (ja) 2010-06-18 2015-07-22 株式会社半導体エネルギー研究所 光電変換装置
US20120024357A1 (en) * 2010-08-02 2012-02-02 Yao-Tung Chen Laminated solar-cell module
TWI436490B (zh) * 2010-09-03 2014-05-01 Univ Tatung 光伏電池結構
JP5421218B2 (ja) * 2010-10-26 2014-02-19 出光興産株式会社 光電変換装置、及び光電変換装置の製造方法
US20120211065A1 (en) * 2011-02-21 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
KR20120095790A (ko) * 2011-02-21 2012-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치
US9159939B2 (en) 2011-07-21 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
US9112086B2 (en) 2011-11-10 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP6108858B2 (ja) 2012-02-17 2017-04-05 株式会社半導体エネルギー研究所 ｐ型半導体材料および半導体装置
JP5769668B2 (ja) * 2012-06-12 2015-08-26 三菱電機株式会社 太陽電池の製造方法および太陽電池製造装置
TWI608007B (zh) * 2012-07-19 2017-12-11 日立化成股份有限公司 太陽電池用鈍化層形成用組成物、帶有太陽電池用鈍化層的半導體基板、帶有太陽電池用鈍化層的半導體基板的製造方法、太陽電池元件、太陽電池元件的製造方法、太陽電池以及用途
JP6139731B2 (ja) * 2016-03-23 2017-05-31 株式会社半導体エネルギー研究所 光電変換装置の作製方法
KR102690582B1 (ko) * 2023-05-31 2024-07-30 세종대학교산학협력단 텐덤 태양전지

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US591743A (en) * 1897-10-12 Adjustable wrench
JPS58180069A (ja) * 1982-04-15 1983-10-21 Agency Of Ind Science & Technol 半導体装置
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
US4510344A (en) * 1983-12-19 1985-04-09 Atlantic Richfield Company Thin film solar cell substrate
CA1303194C (en) * 1987-07-21 1992-06-09 Katsumi Nakagawa Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %
US4926229A (en) * 1987-11-20 1990-05-15 Canon Kabushiki Kaisha Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
US5002618A (en) * 1989-01-21 1991-03-26 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film
US5002617A (en) * 1989-01-21 1991-03-26 Canon Kabushiki Kaisha Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film
JPH02192771A (ja) * 1989-01-21 1990-07-30 Canon Inc 光起電力素子
JP2829653B2 (ja) * 1989-01-21 1998-11-25 キヤノン株式会社 光起電力素子
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
JP2761156B2 (ja) * 1992-06-30 1998-06-04 キヤノン株式会社 光起電力素子及びその製造方法、並びにそれを用いた発電装置
JP2701709B2 (ja) * 1993-02-16 1998-01-21 株式会社デンソー ２つの材料の直接接合方法及び材料直接接合装置
JP3360919B2 (ja) * 1993-06-11 2003-01-07 三菱電機株式会社 薄膜太陽電池の製造方法，及び薄膜太陽電池
JP3571785B2 (ja) * 1993-12-28 2004-09-29 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP2984537B2 (ja) * 1994-03-25 1999-11-29 キヤノン株式会社 光起電力素子
US5635408A (en) * 1994-04-28 1997-06-03 Canon Kabushiki Kaisha Method of producing a semiconductor device
US6906383B1 (en) * 1994-07-14 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacture thereof
US5780160A (en) * 1994-10-26 1998-07-14 Donnelly Corporation Electrochromic devices with improved processability and methods of preparing the same
US5736431A (en) * 1995-02-28 1998-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for producing thin film solar battery
JPH08255762A (ja) * 1995-03-17 1996-10-01 Nec Corp 半導体デバイスの製造方法
TW355845B (en) * 1995-03-27 1999-04-11 Semiconductor Energy Lab Co Ltd Semiconductor device and a method of manufacturing the same
US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
JPH09255487A (ja) * 1996-03-18 1997-09-30 Sony Corp 薄膜半導体の製造方法
JPH1093122A (ja) * 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 薄膜太陽電池の製造方法
EP0851513B1 (en) * 1996-12-27 2007-11-21 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
US6756289B1 (en) * 1996-12-27 2004-06-29 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
JPH10335683A (ja) * 1997-05-28 1998-12-18 Ion Kogaku Kenkyusho:Kk タンデム型太陽電池およびその製造方法
JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
JPH11288858A (ja) * 1998-01-30 1999-10-19 Canon Inc Ｓｏｉ基板の再生方法及び再生基板
SG71903A1 (en) * 1998-01-30 2000-04-18 Canon Kk Process of reclamation of soi substrate and reproduced substrate
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
JP2000150837A (ja) * 1998-11-13 2000-05-30 Canon Inc 半導体基体の作製方法
JP2000150940A (ja) * 1998-11-18 2000-05-30 Denso Corp 半導体微粒子集合体及びその製造方法
JP3381690B2 (ja) * 1998-12-02 2003-03-04 日本電気株式会社 電界効果トランジスタおよびその製造方法
TW439102B (en) * 1998-12-02 2001-06-07 Nippon Electric Co Field effect transistor and method of manufacturing the same
US6468923B1 (en) * 1999-03-26 2002-10-22 Canon Kabushiki Kaisha Method of producing semiconductor member
JP2001160540A (ja) * 1999-09-22 2001-06-12 Canon Inc 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池
JP3513592B2 (ja) * 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
JP2002222972A (ja) * 2001-01-29 2002-08-09 Sharp Corp 積層型太陽電池
US6818529B2 (en) * 2002-09-12 2004-11-16 Applied Materials, Inc. Apparatus and method for forming a silicon film across the surface of a glass substrate
JP2004296650A (ja) * 2003-03-26 2004-10-21 Canon Inc 積層型光起電力素子
JP2005050905A (ja) * 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
WO2005088734A1 (ja) * 2004-03-17 2005-09-22 Kaneka Corp 薄膜光電変換装置
WO2005096397A1 (ja) * 2004-03-31 2005-10-13 Rohm Co., Ltd 積層型薄膜太陽電池およびその製法
US20070131270A1 (en) * 2005-07-14 2007-06-14 Russell Gaudiana Window with photovoltaic cell
US7772485B2 (en) * 2005-07-14 2010-08-10 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US7781673B2 (en) * 2005-07-14 2010-08-24 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US8158881B2 (en) * 2005-07-14 2012-04-17 Konarka Technologies, Inc. Tandem photovoltaic cells
US20070181179A1 (en) * 2005-12-21 2007-08-09 Konarka Technologies, Inc. Tandem photovoltaic cells
US20080006324A1 (en) * 2005-07-14 2008-01-10 Konarka Technologies, Inc. Tandem Photovoltaic Cells
US20070267055A1 (en) * 2005-07-14 2007-11-22 Konarka Technologies, Inc. Tandem Photovoltaic Cells
US7674687B2 (en) * 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
WO2007014320A2 (en) * 2005-07-27 2007-02-01 Silicon Genesis Corporation Method and structure for fabricating multiple tile regions onto a plate using a controlled cleaving process
US20070193621A1 (en) * 2005-12-21 2007-08-23 Konarka Technologies, Inc. Photovoltaic cells
JP5064693B2 (ja) * 2006-02-13 2012-10-31 信越化学工業株式会社 Ｓｏｉ基板の製造方法
EP2261980B1 (en) * 2006-04-11 2013-06-12 Merck Patent GmbH Tandem photovoltaic cells
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US8008421B2 (en) * 2006-10-11 2011-08-30 Konarka Technologies, Inc. Photovoltaic cell with silole-containing polymer
US8008424B2 (en) * 2006-10-11 2011-08-30 Konarka Technologies, Inc. Photovoltaic cell with thiazole-containing polymer
JP4985929B2 (ja) * 2006-10-31 2012-07-25 スタンレー電気株式会社 有機薄膜素子およびタンデム型光電変換素子
WO2008126706A1 (en) * 2007-04-06 2008-10-23 Semiconductor Energy Laboratory Co., Ltd. Photovoltaic device and method for manufacturing the same
WO2008132904A1 (en) * 2007-04-13 2008-11-06 Semiconductor Energy Laboratory Co., Ltd. Photovoltaic device and method for manufacturing the same
WO2009057669A1 (en) * 2007-11-01 2009-05-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
KR101608953B1 (ko) * 2007-11-09 2016-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
TWI452703B (zh) * 2007-11-16 2014-09-11 半導體能源研究所股份有限公司 光電轉換裝置及其製造方法

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