JP2009094540A - コンタクトを形成するための方法およびプリント回路パッケージ - Google Patents
コンタクトを形成するための方法およびプリント回路パッケージ Download PDFInfo
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- JP2009094540A JP2009094540A JP2009012968A JP2009012968A JP2009094540A JP 2009094540 A JP2009094540 A JP 2009094540A JP 2009012968 A JP2009012968 A JP 2009012968A JP 2009012968 A JP2009012968 A JP 2009012968A JP 2009094540 A JP2009094540 A JP 2009094540A
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Abstract
【解決手段】各部品について少なくとも1つの接続コンタクトが少なくとも部分的に前記第1の表面領域に配置される。本方法は、第1の表面領域にカバー素子が設置されること、および少なくとも1つのコンタクト経路が第1の表面領域と直交して支持材料内に延びることで特徴付けられる。調製される第2の表面領域に少なくとも1つのコンタクト点を形成するために、コンタクト点と接続コンタクトの少なくとも1つの間でそれぞれのコンタクト経路を経由して少なくとも1つの電気コンタクト接続が確立される。このタイプのコンタクト点は接続コンタクトの反対側の支持材料表面に形成されることが可能であり、その結果、能動性の表面と反対側の支持材料表面で、コンタクト点が接続コンタクトに電気的に接続される。
【選択図】図1
Description
1.ウェハの第1の側に透明のカバーを固定する工程、
2.活性層を含む側の反対側でウェハを薄肉化する工程、
3.ウェハの第2の側からウェハ内部へと、第1の側の表面に対して実質的に直角に延びる少なくとも1つの導電性経路を導入する工程を含み、第2の側が活性層を含む側の反対側であり、ウェハの回路の少なくとも1つの端子と導電性経路の間の電気的コンタクトを形成する工程を含む。
Claims (36)
- 基板、少なくとも1つの端子コンタクト(25)、および第1の側でチップ(1、2、3)の回路を含む活性層(11)を有するウェハ(1)を備えた集積回路(6)を作製する方法であって、
1.ウェハ(1)の第1の側(14)に透明のカバー(20)を固定する工程と、
2.活性層(11)を含む側(14)の反対の側(22)でウェハ(1)を薄肉化する工程と、
3.活性層(11)を含む側(14)に対して反対の側であるウェハ(1)の第2の側(22)から第1の側(14)の表面に対して実質的に直角に延びる少なくとも1つの導電性経路をウェハ(1)内に導入する工程と、およびウェハ(1)の回路の少なくとも1つの端子と導電性経路(31)の間に電気的コンタクトを形成する工程とを含むことを特徴とする方法。 - 基板(101)をドープすることによって導電性経路が形成されることを特徴とする請求項1に記載の方法。
- 少なくとも1つの開口(17)を導入することおよび導電性材料(19、31)で開口(17)を充填することによって導電性経路が形成されることを特徴とする請求項1に記載の方法。
- 少なくとも1つの開口がエッチングによってチップの基板内に形成されることを特徴とする請求項3に記載の方法。
- 少なくとも1つの開口(17)の導入がドライ・エッチングによって達成されることを特徴とする請求項3に記載の方法。
- 少なくとも1つの開口(17)の導入がKOHによるエッチングによって達成されることを特徴とする請求項3に記載の方法。
- 導電性材料(31)が導電性のエポキシを含むことを特徴とする請求項3に記載の方法。
- 導電性材料(31)が、電着によって少なくとも1つの開口内に堆積される金属を含むことを特徴とする請求項3に記載の方法。
- 導電性経路に電気的に接続される少なくとも1つのコンタクト面(25)が、活性層(11)を有する側(14)の反対側にあるウェハ(1)の第2の側に取り付けられることを特徴とする請求項1に記載の方法。
- さらなるカバー(27)がウェハの第2の側に取り付けられることを特徴とする請求項1に記載の方法。
- さらなるカバー(27)が少なくとも1つの開口部(28)を含みその開口が導電性経路に合致することを特徴とする請求項10に記載の方法。
- 少なくとも1つの開口部(28)が導電性の充填物(29)を供給され、導電性経路と導電性充填物(29)の間でカバー(27)に電気的コンタクトが形成されることを特徴とする請求項11に記載の方法。
- 少なくとも1つの開口部(28)で導電性充填物(29)に電気的に接続される少なくとも1つのコンタクト面(25)が、ウェハ(1)に面するカバーの側からさらなるカバー(27)の反対側に取り付けられることを特徴とする請求項11に記載の方法。
- ウェハ(1)と少なくとも1つのさらなるウェハ(2、3)を、ウェハ(1)の導電性経路(31)とさらなるウェハ(2)の少なくとも1つの対応する端子面(25)の間に電気的コンタクトが形成されるような手法で相互に、または相互に上に固定する工程を含むことを特徴とする請求項1に記載の方法。
- ウェハ(1、2、3)を相互に上に固定する工程が、ウェハ(1、2、3)のコンタクト面(25、36)上でハンダ・ビード(24)を溶融させる工程を含むことを特徴とする請求項14に記載の方法。
- ウェハ(2)の第1の側(14)に対して実質的に直交して延びる導電性経路が少なくとも1つのさらなるウェハ(2)内に導入されることを特徴とする請求項14に記載の方法。
- 少なくとも1つのさらなるウェハ(2、3)が活性層(11)を含む側の反対の側で薄肉化されることを特徴とする請求項14に記載の方法。
- 少なくとも1つのさらなるウェハ(2、3)内の少なくとも1つの導電性経路が、開口(17)を形成することおよび導電性材料(31)で開口(17)を充填することによって形成されることを特徴とする請求項16に記載の方法。
- 少なくとも1つの導電性経路がドーピングによって少なくとも1つのさらなるウェハ(2、3)内に形成されることを特徴とする請求項16に記載の方法。
- 少なくとも1つのさらなるウェハ(2、3)の回路から少なくとも1つの導電性経路へと電気的接続が形成されることを特徴とする請求項16に記載の方法。
- 多層構造から成る集積回路(6)のウェハ(1、2、3)が絶縁性の介在層(45)を介して相互に接続されることを特徴とする請求項16に記載の方法。
- ウェハ(1、2、3)を相互に上に固定する工程が、
a)ウェハ(1、2、3)のコンタクト面(23、25)にハンダ・ビードを付ける工程と、
b)コンタクト面(23、25)を含む表面(14、22)に絶縁層(45)を付着させてハンダ・ビードを覆う工程と、
c)ハンダ・ビード(24)が露出してコンタクト面(36)を有するまで層(45)を研削する工程と、
d)コンタクト面(36)にハンダ・ビード(24)を付ける工程と、
e)ハンダ・ビード(24)を部分的に溶融することによってチップを連結する工程とを含むことを特徴とする請求項21に記載の方法。 - チップ(1、2、3)がダイシング・ソーを使用して分離されることを特徴とする請求項1に記載の方法。
- 集積回路(6)が貫通孔またはSMTハウジング内に投入されることを特徴とする請求項1に記載の方法。
- 集積回路パッケージ配列であって、
第1の表面領域と第2の表面領域とを有する薄い基板と、
前記第1の表面領域に隣接して前記基板に形成された活性層と、
前記第1の表面領域上に形成され、前記活性層に電気的に接続された第1の電気的コンタクトと、
前記第1の表面領域と前記第2の表面領域との間で前記基板に形成されたテーパ形状の経路とを含み、前記テーパ形状の経路は、前記第1の表面領域に向かって円錐状に先細となっており、さらに、
前記第2の表面領域に隣接して形成された第2の電気的コンタクトと、
前記第1の電気的コンタクトと前記第2の電気的コンタクトとを前記テーパ形状の経路を介して電気的に接続する導電手段と、
前記第1の表面領域上のカバーとを含むことを特徴とする集積回路パッケージ配列。 - 前記活性層は、第1の表面領域にセンサもしくは光学的活性を有する部品を含むことを特徴とする請求項25に記載の集積回路パッケージ配列。
- 第2の表面領域の上にカバー(20、27)を含むことを特徴とする請求項25に記載の集積回路パッケージ配列。
- 部品間に絶縁材で充填された隔絶用トレンチ(35)を有することを特徴とする請求項25に記載の集積回路パッケージ配列。
- 集積回路パッケージ配列であって、
第1の表面領域と第2の表面領域とを有する薄い基板と、
前記第1の表面領域に隣接して前記基板に形成された活性層と、
前記第1の表面領域上に形成され、前記活性層に電気的に接続された第1の電気的コンタクトと、
前記第1の表面領域と前記第2の表面領域との間で前記基板に形成された経路とを含み、前記経路は、前記第1の電気的コンタクトで終端するか、または、前記第1の電気的コンタクトに接触しており、さらに、
前記第2の表面領域に隣接して形成された第2の電気的コンタクトと、
前記第1の電気的コンタクトと前記第2の電気的コンタクトとを前記経路を介して電気的に接続する導電手段と、
前記第1の表面領域上のカバーとを含むことを特徴とする集積回路パッケージ配列。 - 配列のうちのチップ(1)が光学モジュールであり、その光学感受性の側(14)が透明カバー(20、21)で覆われることを特徴とする請求項29に記載の集積回路パッケージ配列。
- カバーが光学素子、特にプリズム、グレーティングまたは光学フィルタを含むことを特徴とする請求項29に記載の集積回路パッケージ配列。
- チップ(1)が放射、圧力、温度、水分、および/または気体もしくは液体の成分に反応する化学センサを含むことを特徴とする請求項29に記載の集積回路パッケージ配列。
- 相互に上に配置され、かつ各々のケースで基板、少なくとも1つの端子コンタクト(25)および一方の側(14)でチップ(1、2、3)の回路を含む活性層(11)を有する基板を含む少なくとも2つのチップ(1、2、3)を含むことを特徴とする請求項29に記載の集積回路パッケージ配列。
- 配列のうちのチップ(1、2、3)間に絶縁性の介在層(45)が配置されることを特徴とする請求項33に記載の集積回路パッケージ配列。
- 配列がエポキシ樹脂(40)でカプセル封入されることを特徴とする請求項29に記載の集積回路パッケージ配列。
- カバー(20)が透明のエポキシ樹脂(21)によってチップ(1)に接続されることを特徴とする請求項31に記載の集積回路パッケージ配列。
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US7880179B2 (en) | 2011-02-01 |
EP2287916A2 (de) | 2011-02-23 |
CN100578816C (zh) | 2010-01-06 |
AU2002356147A1 (en) | 2003-03-10 |
AU2002356147A8 (en) | 2003-03-10 |
CN101714516A (zh) | 2010-05-26 |
US20050042786A1 (en) | 2005-02-24 |
EP1419534A2 (de) | 2004-05-19 |
KR20040036735A (ko) | 2004-04-30 |
JP4499412B2 (ja) | 2010-07-07 |
EP2287916A3 (de) | 2012-01-25 |
US20100065883A1 (en) | 2010-03-18 |
US6911392B2 (en) | 2005-06-28 |
IL160189A (en) | 2007-12-03 |
US8349707B2 (en) | 2013-01-08 |
US7700957B2 (en) | 2010-04-20 |
US20110021002A1 (en) | 2011-01-27 |
WO2003019653A3 (de) | 2003-11-20 |
KR100638379B1 (ko) | 2006-10-26 |
IL160189A0 (en) | 2004-07-25 |
US20080150063A1 (en) | 2008-06-26 |
JP5329996B2 (ja) | 2013-10-30 |
JP2005501414A (ja) | 2005-01-13 |
CN1547778A (zh) | 2004-11-17 |
US20130137259A1 (en) | 2013-05-30 |
US7821106B2 (en) | 2010-10-26 |
WO2003019653A2 (de) | 2003-03-06 |
US20030113979A1 (en) | 2003-06-19 |
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