DE10141571B8 - Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist - Google Patents

Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist Download PDF

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Publication number
DE10141571B8
DE10141571B8 DE2001141571 DE10141571A DE10141571B8 DE 10141571 B8 DE10141571 B8 DE 10141571B8 DE 2001141571 DE2001141571 DE 2001141571 DE 10141571 A DE10141571 A DE 10141571A DE 10141571 B8 DE10141571 B8 DE 10141571B8
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DE
Germany
Prior art keywords
assembling
dimensional
semiconductor device
integrated circuit
circuit fabricated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE2001141571
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English (en)
Other versions
DE10141571A1 (de
DE10141571B4 (de
Inventor
Florian Dipl.-Ing. Bieck
Jürgen Dr. Leib
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott AG
Original Assignee
Schott AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott AG filed Critical Schott AG
Priority to DE2001141571 priority Critical patent/DE10141571B8/de
Priority to IL15972802A priority patent/IL159728A0/xx
Priority to EP02798641A priority patent/EP1419102A2/de
Priority to KR10-2004-7002745A priority patent/KR20040041585A/ko
Priority to AU2002333693A priority patent/AU2002333693A1/en
Priority to CNA028164369A priority patent/CN1545484A/zh
Priority to JP2003528720A priority patent/JP4485790B2/ja
Priority to PCT/EP2002/009449 priority patent/WO2003024865A2/de
Priority to DE50210653T priority patent/DE50210653D1/de
Priority to KR1020047002747A priority patent/KR100638379B1/ko
Priority to SG200602593-6A priority patent/SG161099A1/en
Priority to PCT/EP2002/009498 priority patent/WO2003019653A2/de
Priority to JP2003522978A priority patent/JP4571405B2/ja
Priority to EP10011997A priority patent/EP2287916A3/de
Priority to PCT/EP2002/009497 priority patent/WO2003019617A2/de
Priority to AU2002342623A priority patent/AU2002342623A1/en
Priority to AU2002356147A priority patent/AU2002356147A1/en
Priority to CN02816578A priority patent/CN100578816C/zh
Priority to EP02779276A priority patent/EP1419530B1/de
Priority to IL16018902A priority patent/IL160189A0/xx
Priority to US10/228,699 priority patent/US6911392B2/en
Priority to EP02796172A priority patent/EP1419534A2/de
Priority to KR1020097021389A priority patent/KR100986816B1/ko
Priority to AT02779276T priority patent/ATE369626T1/de
Priority to CNB02816573XA priority patent/CN100446248C/zh
Priority to US10/487,604 priority patent/US7160478B2/en
Priority to CN200910225232A priority patent/CN101714516A/zh
Priority to JP2003523003A priority patent/JP4499412B2/ja
Priority to KR1020047002746A priority patent/KR100940943B1/ko
Priority to US10/228,804 priority patent/US6894358B2/en
Publication of DE10141571A1 publication Critical patent/DE10141571A1/de
Priority to IL159728A priority patent/IL159728A/en
Priority to IL160189A priority patent/IL160189A/en
Priority to US10/947,974 priority patent/US7700957B2/en
Priority to US10/994,659 priority patent/US7071521B2/en
Publication of DE10141571B4 publication Critical patent/DE10141571B4/de
Application granted granted Critical
Publication of DE10141571B8 publication Critical patent/DE10141571B8/de
Priority to US11/378,962 priority patent/US7285834B2/en
Priority to US11/603,388 priority patent/US8114304B2/en
Priority to US12/042,108 priority patent/US7821106B2/en
Priority to JP2009012968A priority patent/JP5329996B2/ja
Priority to US12/623,323 priority patent/US7880179B2/en
Priority to US12/894,378 priority patent/US8349707B2/en
Priority to US13/736,365 priority patent/US20130137259A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Led Device Packages (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE2001141571 2001-08-24 2001-08-24 Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist Expired - Fee Related DE10141571B8 (de)

Priority Applications (41)

Application Number Priority Date Filing Date Title
DE2001141571 DE10141571B8 (de) 2001-08-24 2001-08-24 Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist
EP02798641A EP1419102A2 (de) 2001-08-24 2002-08-23 Verfahren zur herstellung von mikro-elektromechanischen bauelementen
KR10-2004-7002745A KR20040041585A (ko) 2001-08-24 2002-08-23 마이크로-전기기계 부품들의 제조 방법
AU2002333693A AU2002333693A1 (en) 2001-08-24 2002-08-23 Method for producing micro-electromechanical components
CNA028164369A CN1545484A (zh) 2001-08-24 2002-08-23 制造微机电构件的方法
JP2003528720A JP4485790B2 (ja) 2001-08-24 2002-08-23 微小電気機械部品を製造するためのプロセス
PCT/EP2002/009449 WO2003024865A2 (de) 2001-08-24 2002-08-23 Verfahren zur herstellung von mikro-elektromechanischen bauelementen
IL15972802A IL159728A0 (en) 2001-08-24 2002-08-23 Method for producing micro-electromechanical components
JP2003523003A JP4499412B2 (ja) 2001-08-24 2002-08-26 コンタクトを形成するための方法およびプリント回路パッケージ
SG200602593-6A SG161099A1 (en) 2001-08-24 2002-08-26 Method for producing electronic components
PCT/EP2002/009498 WO2003019653A2 (de) 2001-08-24 2002-08-26 Verfahren zum kontaktieren und gehäusen von integrierten schaltungen
JP2003522978A JP4571405B2 (ja) 2001-08-24 2002-08-26 電子部品の作製方法
EP10011997A EP2287916A3 (de) 2001-08-24 2002-08-26 Verfahren zum Kontaktieren und Gehäusen von integrierten Schaltungen
PCT/EP2002/009497 WO2003019617A2 (de) 2001-08-24 2002-08-26 Verfahren zur herstellung von elektronischen bauelementen
AU2002342623A AU2002342623A1 (en) 2001-08-24 2002-08-26 Method for producing electronic components
AU2002356147A AU2002356147A1 (en) 2001-08-24 2002-08-26 Method for producing contacts and printed circuit packages
CN02816578A CN100578816C (zh) 2001-08-24 2002-08-26 用于形成触点的方法及封装的集成电路组件
EP02779276A EP1419530B1 (de) 2001-08-24 2002-08-26 Verfahren zur herstellung von elektronischen bauelementen
IL16018902A IL160189A0 (en) 2001-08-24 2002-08-26 Method for producing contacts and printed circuit packages
US10/228,699 US6911392B2 (en) 2001-08-24 2002-08-26 Process for making contact with and housing integrated circuits
EP02796172A EP1419534A2 (de) 2001-08-24 2002-08-26 Verfahren zum kontaktieren und gehäusen von integrierten schaltungen
KR1020097021389A KR100986816B1 (ko) 2001-08-24 2002-08-26 전자 부품 제조 방법
DE50210653T DE50210653D1 (de) 2001-08-24 2002-08-26 Verfahren zur herstellung von elektronischen bauelementen
CNB02816573XA CN100446248C (zh) 2001-08-24 2002-08-26 电子元件及其制造方法
US10/487,604 US7160478B2 (en) 2001-08-24 2002-08-26 Method for producing electronic componets
CN200910225232A CN101714516A (zh) 2001-08-24 2002-08-26 用于形成触点的方法及封装的集成电路组件
KR1020047002747A KR100638379B1 (ko) 2001-08-24 2002-08-26 집적회로의 컨택 제조 및 하우징 공정
KR1020047002746A KR100940943B1 (ko) 2001-08-24 2002-08-26 전자 부품 제조 방법
US10/228,804 US6894358B2 (en) 2001-08-24 2002-08-26 Process for producing microelectromechanical components and a housed microelectromechanical component
AT02779276T ATE369626T1 (de) 2001-08-24 2002-08-26 Verfahren zur herstellung von elektronischen bauelementen
IL159728A IL159728A (en) 2001-08-24 2004-01-06 Method for manufacturing microelectromechanical components
IL160189A IL160189A (en) 2001-08-24 2004-02-03 Method for manufacturing conductors and cases of printed circuits
US10/947,974 US7700957B2 (en) 2001-08-24 2004-09-22 Process for making contact with and housing integrated circuits
US10/994,659 US7071521B2 (en) 2001-08-24 2004-11-22 Process for producing microelectromechanical components and a housed microelectromechanical component
US11/378,962 US7285834B2 (en) 2001-08-24 2006-03-18 Process for producing microelectromechanical components and a housed microelectromechanical component
US11/603,388 US8114304B2 (en) 2001-08-24 2006-11-22 Method for producing electronic components
US12/042,108 US7821106B2 (en) 2001-08-24 2008-03-04 Process for making contact with and housing integrated circuits
JP2009012968A JP5329996B2 (ja) 2001-08-24 2009-01-23 コンタクトを形成するための方法およびプリント回路パッケージ
US12/623,323 US7880179B2 (en) 2001-08-24 2009-11-20 Process for making contact with and housing integrated circuits
US12/894,378 US8349707B2 (en) 2001-08-24 2010-09-30 Process for making contact with and housing integrated circuits
US13/736,365 US20130137259A1 (en) 2001-08-24 2013-01-08 Process for Making Contact with and Housing Integrated Circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2001141571 DE10141571B8 (de) 2001-08-24 2001-08-24 Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist

Publications (3)

Publication Number Publication Date
DE10141571A1 DE10141571A1 (de) 2003-03-13
DE10141571B4 DE10141571B4 (de) 2005-01-27
DE10141571B8 true DE10141571B8 (de) 2005-05-25

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DE2001141571 Expired - Fee Related DE10141571B8 (de) 2001-08-24 2001-08-24 Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist

Country Status (2)

Country Link
CN (1) CN100446248C (de)
DE (1) DE10141571B8 (de)

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ATE369626T1 (de) 2001-08-24 2007-08-15 Schott Ag Verfahren zur herstellung von elektronischen bauelementen
US7180149B2 (en) 2003-08-28 2007-02-20 Fujikura Ltd. Semiconductor package with through-hole
DE10356885B4 (de) * 2003-12-03 2005-11-03 Schott Ag Verfahren zum Gehäusen von Bauelementen und gehäustes Bauelement
US7262622B2 (en) * 2005-03-24 2007-08-28 Memsic, Inc. Wafer-level package for integrated circuits
DE102007034306B3 (de) * 2007-07-24 2009-04-02 Austriamicrosystems Ag Halbleitersubstrat mit Durchkontaktierung und Verfahren zur Herstellung eines Halbleitersubstrates mit Durchkontaktierung
DE102008047369A1 (de) * 2008-09-15 2010-04-15 Heraeus Sensor Technology Gmbh Epitaktischer Rußsensor
US10416425B2 (en) 2009-02-09 2019-09-17 X-Celeprint Limited Concentrator-type photovoltaic (CPV) modules, receiver and sub-receivers and methods of forming same
JP2010245292A (ja) * 2009-04-06 2010-10-28 Panasonic Corp 光学デバイス、電子機器、及びその製造方法
US9293422B1 (en) * 2014-09-26 2016-03-22 Texas Instruments Incorporated Optoelectronic packages having magnetic field cancelation
WO2017105581A2 (en) 2015-10-02 2017-06-22 Semprius, Inc. Wafer-integrated, ultra-low profile concentrated photovoltaics (cpv) for space applications
DE102017129524A1 (de) * 2017-12-12 2019-06-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen eines semitransparenten Displays sowie ein semitransparentes Display

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DE19846232A1 (de) * 1998-09-03 2000-03-09 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiterbauelements mit Rückseitenkontaktierung
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DE19958486A1 (de) * 1999-05-27 2000-12-07 Fraunhofer Ges Forschung Verfahren zur vertikalen Integration von elektrischen Bauelementen mittels Rückseitenkontakt
US6171887B1 (en) * 1996-02-28 2001-01-09 Kabushiki Kaisha Toshiba Semiconductor device for a face down bonding to a mounting substrate and a method of manufacturing the same

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US5798557A (en) * 1996-08-29 1998-08-25 Harris Corporation Lid wafer bond packaging and micromachining
US6096155A (en) * 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
US5761350A (en) * 1997-01-22 1998-06-02 Koh; Seungug Method and apparatus for providing a seamless electrical/optical multi-layer micro-opto-electro-mechanical system assembly

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