JP4499412B2 - コンタクトを形成するための方法およびプリント回路パッケージ - Google Patents
コンタクトを形成するための方法およびプリント回路パッケージ Download PDFInfo
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- JP4499412B2 JP4499412B2 JP2003523003A JP2003523003A JP4499412B2 JP 4499412 B2 JP4499412 B2 JP 4499412B2 JP 2003523003 A JP2003523003 A JP 2003523003A JP 2003523003 A JP2003523003 A JP 2003523003A JP 4499412 B2 JP4499412 B2 JP 4499412B2
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Description
1.ウェハの第1の側に透明のカバーを固定する工程、
2.活性層を含む側の反対側でウェハを薄肉化する工程、
3.ウェハの第2の側からウェハ内部へと、第1の側の表面に対して実質的に直角に延びる少なくとも1つの導電性経路を導入する工程を含み、第2の側が活性層を含む側の反対側であり、ウェハの回路の少なくとも1つの端子と導電性経路の間の電気的コンタクトを形成する工程を含む。
Claims (40)
- 第1の表面領域(13)を有する基板材料(1、10)内に集積化される少なくとも1つの部品のための電気的コンタクト接続を形成する方法であって、
a)少なくとも1つの端子コンタクト(12)が各部品に対して第1の表面領域内に少なくとも部分的に配置され、
b)光学的に透明のカバー(20)が第1の表面領域に取り付けられ、そして、
c)基板材料内で第1の表面領域に関して横断方向に走る少なくとも1つのコンタクト経路(31)が形成され、これは、
d)供給される第2の表面領域内に少なくとも1つのコンタクト場所(24)を形成するためであり、さらに、
e)それぞれのコンタクト経路(31)を経由して、コンタクト場所(24)から端子コンタクト(12)のうちの少なくとも1つへの少なくとも1つの電気的コンタクト接続が形成され、
少なくとも1つのコンタクト経路(30)が形成される前にカバー(20)が取り付けられ、第2の表面領域の供給が基板材料の薄肉化の工程を含み、特に、第2の表面領域から出発するコンタクト経路(31)が端子コンタクトに実質的に直接隣り合うことを特徴とする方法。 - 部品に関する基板材料(1、10)が、規定されるべきチップ領域(1a、1b)に分割され、コンタクト経路(31)が、端子コンタクト(12)の隣りで基板材料のそれぞれのチップ領域に導入されることを特徴とする請求項1に記載の方法。
- コンタクト経路(31)が、基板材料(1、10)内に、端子コンタクトにこれらが隣接するような手法で導入されることを特徴とする請求項1に記載の方法。
- コンタクト経路(31)のうちの少なくともいくつかがチップ領域(1a、1b)の規定されるべき分離線(36)上に敷設されることを特徴とする請求項1に記載の方法。
- コンタクト経路(31)の形成が基板材料(1、10)に関するコンタクト経路の横方向の絶縁(32)を含むことを特徴とする請求項1に記載の方法。
- コンタクト経路(31)の形成が、元素の周期律系の第III主族または第V主族からの化学元素で基板材料をドープする工程を含むことを特徴とする請求項1に記載の方法。
- コンタクト経路(31)の形成が元素のイオン・インプランテーションによってドープする工程を含むことを特徴とする請求項1に記載の方法。
- コンタクト経路(31)の形成が元素の熱拡散によってドープする工程を含むことを特徴とする請求項1に記載の方法。
- コンタクト経路(19、31)がドライ・エッチング法および/またはウェット・エッチング法の補助で形成されることを特徴とする請求項1に記載の方法。
- コンタクト経路(31)の形成が開口(17、30)の供給を含むことを特徴とする請求項9に記載の方法。
- 開口(17、30)のドライ・エッチングが、フォトリソグラフィによるパターニング、および/または、好ましくはSF6ラジカルによる異方性ドライ・エッチングを含むことを特徴とする請求項10に記載の方法。
- 開口(17、30)のウエット・エッチングが、フォトリソグラフィによるパターニング、および/または、好ましくはKOH溶液による異方性ウェット・エッチングを含むことを特徴とする請求項10に記載の方法。
- 電気的コンタクト接続(19、31)の形成が第1の表面領域上の端子コンタクト(12)の中継(18)を含むことを特徴とする請求項1に記載の方法。
- 電気的コンタクト接続(19、31)の形成が、好ましくはアルミニウム、銅またはニッケルの蒸発コーティング、スパッタリング、CVD蒸着、および/またはPVD蒸着によって達成され、引き続きパターニングが行われることを特徴とする請求項1に記載の方法。
- 電気的コンタクト接続(19、31)の形成が、好ましくはアルミニウム、銅またはニッケルの非電気的蒸着を含むことを特徴とする請求項1に記載の方法。
- 電気的コンタクト接続(19、31)の形成がコンタクト経路または開口(17、30)の充填を含むことを特徴とする請求項1に記載の方法。
- 異なる端子コンタクトへの複数の電気的コンタクト接続がそれぞれのコンタクト経路(19、31)または開口(17、30)を通って敷設されることを特徴とする請求項1に記載の方法。
- 電気的コンタクト接続が敷設された後にコンタクト経路(19、31)または開口(17、30)を絶縁材で充填する処理が行われることを特徴とする請求項1に記載の方法。
- それぞれのコンタクト経路(19、31)または開口(17、30)を通って敷設された電気的コンタクト接続が、異なるチップ領域(1a、1b)の端子コンタクトへと導かれることを特徴とする請求項1に記載の方法。
- 電気的コンタクト接続の形成が第2の表面領域上のコンタクト経路(19、31)の領域内にハンダ・ビード(24)を付ける工程を含むことを特徴とする請求項1に記載の方法。
- 電気的コンタクト接続の形成が第2の表面領域上で敷設された電気的コンタクト接続の中継(26)を含むことを特徴とする請求項1に記載の方法。
- カバー(20)が、ガラスまたはプラスティックまたはガラス−プラスティック複合材料から供給されることを特徴とする請求項1に記載の方法。
- カバーが接着促進剤(21)を使用して取り付けられることを特徴とする請求項1に記載の方法。
- 接着促進剤(21)が、接着剤、好ましくはエポキシ樹脂、および/またはワックスおよび/またはゾル・ゲルを含むことを特徴とする請求項1に記載の方法。
- カバー(20)が熱または陽極ボンディング法の補助で取り付けられることを特徴とする請求項1に記載の方法。
- カバーの取り付けもしくはカバー(20)の接着が基板材料(1、10)上の酸化層の蒸着を含むことを特徴とする請求項1に記載の方法。
- カバーの取り付けもしくは接着が化学的機械的研磨法の補助で平面化する工程を含むことを特徴とする請求項1に記載の方法。
- 薄肉化が基板材料のエッチング、および/または、研削を含むことを特徴とする請求項1に記載の方法。
- 特に、ハウジング内で少なくとも1つの部品を実装する方法であって、
a)第2の表面領域の反対側にある第1の表面領域からなる基板材料(1、10)内で少なくとも1つの半導体部品を作製する工程を含み、各集積回路(11)について少なくとも1つの端子コンタクト(12)が少なくとも部分的に第1の表面領域に配置されており、さらに、
b)第1の表面領域の上に第1のカバーを設けられ、かつ第2の表面領域に少なくとも1つのコンタクト場所(23、24)を有する基板材料を形成するために請求項1乃至28のいずれか1項に記載の方法を実行する工程と、
c)第2の表面領域に第2のカバーを取り付ける工程とを含むことを特徴とする方法。 - カバー(27)の取り付けが、カバーを貫く全行程を通過する開口(28)の導入を含むことを特徴とする請求項29に記載の方法。
- 敷設する工程が貫通開口(28)の充填を含むことを特徴とする請求項29に記載の方法。
- カバーの開口を通してコンタクト場所および/または中継されたコンタクト場所へと少なくとも1つの電気的接続を敷設する工程を含み、基板材料から遠隔にある第2のカバーのその側の敷設の結果として、少なくとも1つのハウジングのコンタクト場所(38)が形成されることを特徴とする請求項29に記載の方法。
- 第2の表面領域上にコンタクト場所(23)の中継を有することを特徴とする請求項29に記載の方法。
- 敷設の工程が、基板材料から遠隔にある第2のカバーのその側でハウジングのコンタクト場所(38)を中継する工程を含むことを特徴とする請求項29に記載の方法。
- 基板材料が、少なくとも2つの部品もしくは集積回路(1a、1b)、部品間もしくは集積回路間に形成された少なくとも1つの隔絶用トレンチ(35)を含むことを特徴とする請求項29に記載の方法。
- 隔絶用トレンチ(35)が、隔絶用トレンチに隣接する基板材料の領域間で電気的な隔絶が作り出されるような手法で形成されることを特徴とする請求項29に記載の方法。
- 隔絶用トレンチ(35)を絶縁材で充填する工程を含むことを特徴とする請求項29に記載の方法。
- 部品(11)もしくは集積回路がその上に実装された半導体ウェハが基板材料(1、10)として供給されることを特徴とする請求項29に記載の方法。
- 隔絶用トレンチ(35)が、隔絶用トレンチに沿って基板材料が少なくとも1つの部品を含むチップ領域に分割されることができるような手法で基板材料に配置されることを特徴とする請求項29に記載の方法。
- 特に請求項1乃至25のいずれか1項に記載の方法を使用して作製される格納マルチ・パッケージ(6)であって、
相互に上に配置され少なくとも2つのチップ(1、2、3)を含み、一方の側(14)において、その各々が少なくとも1つの端子コンタクト(25)と、チップ(1、2、3)の回路からなり且つ少なくとも部分的にハウジング(20、27、45、40)で囲まれる活性層(11)とを含み、カバー(20)がチップ(1、2)のうちの第1のものの一方の側(14、22)に固定され、チップ(1)の基板が活性層(11)を含む側(14)の反対の側(22)で薄肉化され、第1のチップ(1)の活性層を含む側の反対の側であるこの側(22)から導入される導電性経路(19)をチップが有し、前記導電性経路は前記活性層を含む側に向かって円錐状に先細となる形状を有し、薄肉化および経路の導入の前にカバーが固定されており、一方で、経路(1)を含むチップの回路の少なくとも1つの端子と導電性経路の間に電気的コンタクトが存在し、他方で、さらなるチップ(2、3)の端子面(25)が導電性経路を有することを特徴とする格納マルチ・パッケージ。
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JP2009094540A (ja) * | 2001-08-24 | 2009-04-30 | Schott Ag | コンタクトを形成するための方法およびプリント回路パッケージ |
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CN100578816C (zh) | 2010-01-06 |
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US20130137259A1 (en) | 2013-05-30 |
US7821106B2 (en) | 2010-10-26 |
US20030113979A1 (en) | 2003-06-19 |
CN101714516A (zh) | 2010-05-26 |
EP2287916A3 (de) | 2012-01-25 |
JP5329996B2 (ja) | 2013-10-30 |
US20110021002A1 (en) | 2011-01-27 |
JP2009094540A (ja) | 2009-04-30 |
EP1419534A2 (de) | 2004-05-19 |
US8349707B2 (en) | 2013-01-08 |
EP2287916A2 (de) | 2011-02-23 |
US20080150063A1 (en) | 2008-06-26 |
US7880179B2 (en) | 2011-02-01 |
WO2003019653A3 (de) | 2003-11-20 |
IL160189A0 (en) | 2004-07-25 |
IL160189A (en) | 2007-12-03 |
KR20040036735A (ko) | 2004-04-30 |
US7700957B2 (en) | 2010-04-20 |
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