JP2009094436A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP2009094436A JP2009094436A JP2007266337A JP2007266337A JP2009094436A JP 2009094436 A JP2009094436 A JP 2009094436A JP 2007266337 A JP2007266337 A JP 2007266337A JP 2007266337 A JP2007266337 A JP 2007266337A JP 2009094436 A JP2009094436 A JP 2009094436A
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- 239000000853 adhesive Substances 0.000 claims abstract description 24
- 230000001070 adhesive effect Effects 0.000 claims abstract description 24
- 230000002093 peripheral effect Effects 0.000 claims description 32
- 230000007246 mechanism Effects 0.000 claims description 12
- 230000003028 elevating effect Effects 0.000 claims description 11
- 239000012141 concentrate Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 138
- 239000007789 gas Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Plasma & Fusion (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
【解決手段】処理対象物であるウェハ2が保持枠6に保持された粘着シート7の上面に貼着された状態でステージ3上に載置され、ステージ3を覆う真空チャンバ5内にプラズマを発生させてステージ3上に載置されたウェハ2にプラズマ処理を施すプラズマ処理装置1において、ウェハ2にプラズマ処理が施されている間、ステージ3の上方の所定位置に位置決めされて保持枠6を覆い、中央部に設けられた開口部40aからウェハ2を露出させる誘電体製のカバー部材40を備える。
【選択図】図1
Description
装置であって、カバー部材をステージ上に載置させたときにカバー部材の開口部によって囲まれるステージ上の領域が誘電体製の膜部材で覆われている。
誘電体製の膜部材である誘電体膜18で覆われている。
点鎖線で示すカバー部材40参照)。一方、カバー部材40は、両昇降シリンダ33のピストンロッド34を最大没入位置まで下動させた状態では保持枠付きウェハ8の保持枠6に上方から当接した「保持枠当接位置」に位置し(ステージ3上に保持枠付きウェハ8が載置されているとき)、或いはステージ3の上面に上方から当接した「ステージ当接位置」に位置する(ステージ3上に保持枠付きウェハ8が載置されていないとき)。
ール50を水平方向に差し入れ、保持枠付きウェハ8をステージ3の上方に位置させる(図7)。そして、保持枠付きウェハ8の保持枠6がステージ3のテーブル部17に設けられた溝部19の直上に位置するように吸着搬送ツール50を下降させ(図8)、吸着搬送ツール50の真空吸引を解除すると、保持枠付きウェハ8の保持枠6は自重でテーブル部17の溝部19内に嵌入する(図9)。これによりウェハ2は下部電極16上に載置された状態となる。
バー部材40の下方の保持枠6に到達しにくい寸法に定められている。
材40の自重によってステージ3上に固定されるので、ウェハ保持機構20によってはステージ3上に固定できない保持枠6の固定を簡単に行うことができる。
膜18(誘電体製の膜部材)で覆われる構成となっていたが、保持枠6が付いていないウェハ2に対してプラズマ処理を行わないのであれば、この誘電体膜18は必ずしも必要ではない。
2 半導体ウェハ(処理対象物)
2a ウェハの外周縁(処理対象物の外周縁)
3 ステージ
5 真空チャンバ
6 保持枠
6a 保持枠の内周縁
7 粘着シート
8 保持枠付きウェハ
18 誘電体膜(膜部材)
33 昇降シリンダ(昇降機構)
40 カバー部材
40a 開口部
Claims (4)
- 処理対象物が保持枠に保持された粘着シートの上面に貼着された状態でステージ上に載置され、ステージを覆う真空チャンバ内にプラズマを発生させてステージ上の処理対象物にプラズマ処理を施すプラズマ処理装置であって、処理対象物にプラズマ処理が施されている間、ステージの上方の所定位置に位置決めされて保持枠を覆い、中央部に設けられた開口部から処理対象物を露出させる誘電体製のカバー部材を備えたことを特徴とするプラズマ処理装置。
- カバー部材は真空チャンバに設けられた昇降機構によってステージの上方を昇降自在に設けられ、昇降機構によるカバー部材の下降動作により保持枠に上方から当接されて前記所定位置に位置決めされることを特徴とする請求項1に記載のプラズマ処理装置。
- カバー部材は、前記所定位置に位置決めされた状態で、処理対象物の外周縁と保持枠の内周縁との間に露出している粘着シートの少なくとも一部の領域の上方を覆うことを特徴とする請求項1又は2に記載のプラズマ処理装置。
- カバー部材をステージ上に載置させたときにカバー部材の開口部によって囲まれるステージ上の領域が誘電体製の膜部材で覆われていることを特徴とする請求項1乃至3の何れかに記載のプラズマ処理装置。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007266337A JP4858395B2 (ja) | 2007-10-12 | 2007-10-12 | プラズマ処理装置 |
PCT/JP2008/002851 WO2009047900A1 (ja) | 2007-10-12 | 2008-10-09 | プラズマ処理装置 |
KR1020107009535A KR101088987B1 (ko) | 2007-10-12 | 2008-10-09 | 플라즈마 처리 장치 |
US12/680,817 US8513097B2 (en) | 2007-10-12 | 2008-10-09 | Plasma processing apparatus |
DE112008002643T DE112008002643B4 (de) | 2007-10-12 | 2008-10-09 | Plasmaverarbeitungsvorrichtung |
US13/938,347 US9401286B2 (en) | 2007-10-12 | 2013-07-10 | Plasma processing apparatus |
US15/188,630 US9842750B2 (en) | 2007-10-12 | 2016-06-21 | Plasma processing method |
US15/804,968 US10796932B2 (en) | 2007-10-12 | 2017-11-06 | Plasma processing apparatus |
US17/013,325 US11551943B2 (en) | 2007-10-12 | 2020-09-04 | Plasma processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007266337A JP4858395B2 (ja) | 2007-10-12 | 2007-10-12 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009094436A true JP2009094436A (ja) | 2009-04-30 |
JP4858395B2 JP4858395B2 (ja) | 2012-01-18 |
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ID=40549052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007266337A Active JP4858395B2 (ja) | 2007-10-12 | 2007-10-12 | プラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
US (5) | US8513097B2 (ja) |
JP (1) | JP4858395B2 (ja) |
KR (1) | KR101088987B1 (ja) |
DE (1) | DE112008002643B4 (ja) |
WO (1) | WO2009047900A1 (ja) |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012164857A1 (ja) * | 2011-05-30 | 2012-12-06 | パナソニック株式会社 | プラズマ処理装置、搬送キャリア、及びプラズマ処理方法 |
JP2013042012A (ja) * | 2011-08-17 | 2013-02-28 | Tokyo Electron Ltd | 半導体製造装置及び処理方法 |
JP2014063810A (ja) * | 2012-09-20 | 2014-04-10 | Panasonic Corp | プラズマ処理装置及びプラズマ処理方法 |
JP2014132656A (ja) * | 2013-01-04 | 2014-07-17 | Psk Inc | 基板処理装置及び方法 |
JP2014220409A (ja) * | 2013-05-09 | 2014-11-20 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2014229765A (ja) * | 2013-05-23 | 2014-12-08 | パナソニック株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP2015026686A (ja) * | 2013-07-25 | 2015-02-05 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2015050334A (ja) * | 2013-09-02 | 2015-03-16 | パナソニックIpマネジメント株式会社 | プラズマ処理装置 |
JP2015050333A (ja) * | 2013-09-02 | 2015-03-16 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2015146464A (ja) * | 2011-03-14 | 2015-08-13 | プラズマ − サーム、エルエルシー | 半導体ウェーハをプラズマ・ダイシングする方法及び装置 |
JP2015532532A (ja) * | 2012-09-28 | 2015-11-09 | プラズマ − サーム、エルエルシー | バック・メタルを有する基板をダイシングするための方法 |
JP2015532542A (ja) * | 2012-10-17 | 2015-11-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | フィルムフレームアプリケーション用uv除去ダイシングテープの部分的前反応によるレーザ・プラズマエッチングウェハダイシング |
CN105390361A (zh) * | 2014-09-02 | 2016-03-09 | 松下知识产权经营株式会社 | 等离子体处理装置及等离子体处理方法 |
CN105390360A (zh) * | 2014-09-02 | 2016-03-09 | 松下知识产权经营株式会社 | 等离子体处理装置及等离子体处理方法 |
JP2016510168A (ja) * | 2013-02-14 | 2016-04-04 | プラズマ − サーム、エルエルシー | 半導体ウェハをプラズマ・ダイシングするための方法及び装置 |
KR20160079932A (ko) * | 2011-05-31 | 2016-07-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 유도성 커플링된 플라즈마(icp) 반응기를 위한 동적인 이온 라디칼 시브 및 이온 라디칼 개구 |
JP2016152314A (ja) * | 2015-02-17 | 2016-08-22 | パナソニックIpマネジメント株式会社 | プラズマ処理装置および電子部品の製造方法 |
US9570272B2 (en) | 2015-03-31 | 2017-02-14 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing apparatus and plasma processing method |
US9583355B2 (en) | 2013-05-09 | 2017-02-28 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing apparatus and plasma processing method |
JP2017054854A (ja) * | 2015-09-07 | 2017-03-16 | パナソニックIpマネジメント株式会社 | プラズマ処理方法および電子部品の製造方法 |
JP2017073569A (ja) * | 2017-01-10 | 2017-04-13 | パナソニックIpマネジメント株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2017085097A (ja) * | 2015-10-22 | 2017-05-18 | エスピーティーエス テクノロジーズ リミティド | プラズマダイシングのための装置 |
JP2017523616A (ja) * | 2014-05-23 | 2017-08-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマダイシング中のダイシングテープ熱管理のための冷却ペデスタル |
JP2017157727A (ja) * | 2016-03-03 | 2017-09-07 | パナソニックIpマネジメント株式会社 | プラズマ処理方法 |
US9779986B2 (en) | 2015-09-07 | 2017-10-03 | Panasonic Intellectual Property Management Co., Ltd. | Plasma treatment method and method of manufacturing electronic component |
US9911638B2 (en) | 2015-03-31 | 2018-03-06 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing apparatus and plasma processing method |
JP2018056532A (ja) * | 2016-09-30 | 2018-04-05 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US9941132B2 (en) | 2015-03-31 | 2018-04-10 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing apparatus and plasma processing method |
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US20100216313A1 (en) | 2010-08-26 |
WO2009047900A1 (ja) | 2009-04-16 |
US20160300739A1 (en) | 2016-10-13 |
US20180061680A1 (en) | 2018-03-01 |
US20130295775A1 (en) | 2013-11-07 |
US10796932B2 (en) | 2020-10-06 |
US9842750B2 (en) | 2017-12-12 |
DE112008002643T5 (de) | 2010-07-29 |
US11551943B2 (en) | 2023-01-10 |
DE112008002643B4 (de) | 2012-12-06 |
US8513097B2 (en) | 2013-08-20 |
KR20100072059A (ko) | 2010-06-29 |
US9401286B2 (en) | 2016-07-26 |
US20200402822A1 (en) | 2020-12-24 |
KR101088987B1 (ko) | 2011-12-01 |
JP4858395B2 (ja) | 2012-01-18 |
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