JP2009076877A5 - - Google Patents

Download PDF

Info

Publication number
JP2009076877A5
JP2009076877A5 JP2008204280A JP2008204280A JP2009076877A5 JP 2009076877 A5 JP2009076877 A5 JP 2009076877A5 JP 2008204280 A JP2008204280 A JP 2008204280A JP 2008204280 A JP2008204280 A JP 2008204280A JP 2009076877 A5 JP2009076877 A5 JP 2009076877A5
Authority
JP
Japan
Prior art keywords
layer
forming
organic compound
fragile
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008204280A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009076877A (ja
JP5388500B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008204280A priority Critical patent/JP5388500B2/ja
Priority claimed from JP2008204280A external-priority patent/JP5388500B2/ja
Publication of JP2009076877A publication Critical patent/JP2009076877A/ja
Publication of JP2009076877A5 publication Critical patent/JP2009076877A5/ja
Application granted granted Critical
Publication of JP5388500B2 publication Critical patent/JP5388500B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008204280A 2007-08-30 2008-08-07 半導体装置の作製方法 Expired - Fee Related JP5388500B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008204280A JP5388500B2 (ja) 2007-08-30 2008-08-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007224043 2007-08-30
JP2007224043 2007-08-30
JP2008204280A JP5388500B2 (ja) 2007-08-30 2008-08-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009076877A JP2009076877A (ja) 2009-04-09
JP2009076877A5 true JP2009076877A5 (enExample) 2011-07-28
JP5388500B2 JP5388500B2 (ja) 2014-01-15

Family

ID=40408198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008204280A Expired - Fee Related JP5388500B2 (ja) 2007-08-30 2008-08-07 半導体装置の作製方法

Country Status (3)

Country Link
US (1) US7838328B2 (enExample)
JP (1) JP5388500B2 (enExample)
KR (1) KR101514627B1 (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080106354A (ko) * 2006-03-17 2008-12-04 엔엑스피 비 브이 안테나 디바이스 및 ｒｆ 통신 장비
JP5371341B2 (ja) * 2007-09-21 2013-12-18 株式会社半導体エネルギー研究所 電気泳動方式の表示装置
JP5451036B2 (ja) * 2008-11-21 2014-03-26 株式会社ジャパンディスプレイ 表示装置及びその製造方法
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
KR101495398B1 (ko) 2008-12-02 2015-02-25 아리조나 보드 오브 리젠츠 온 비하프 오브 아리조나 스테이트 유니버시티 유연성 기판 조립체의 제조 방법 및 그것으로부터의 유연성 기판 조립체
US9601530B2 (en) 2008-12-02 2017-03-21 Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
US9721825B2 (en) 2008-12-02 2017-08-01 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
CN101762922B (zh) * 2008-12-24 2012-05-30 京东方科技集团股份有限公司 触摸式电子纸及其制造方法
JP5632654B2 (ja) * 2009-05-29 2014-11-26 株式会社半導体エネルギー研究所 表示装置
JP5521034B2 (ja) * 2009-05-29 2014-06-11 アリゾナ・ボード・オブ・リージェンツ，フォー・アンド・オン・ビハーフ・オブ・アリゾナ・ステート・ユニバーシティ フレキシブル半導体デバイスを高温で提供する方法およびそのフレキシブル半導体デバイス
KR101457837B1 (ko) * 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR20230165355A (ko) 2009-09-16 2023-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101519893B1 (ko) * 2009-09-16 2015-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR20120093864A (ko) * 2009-10-09 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN110061144A (zh) * 2009-10-16 2019-07-26 株式会社半导体能源研究所 逻辑电路和半导体器件
KR102484475B1 (ko) 2009-11-06 2023-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102450568B1 (ko) 2009-11-13 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011068950A1 (en) * 2009-12-03 2011-06-09 The Trustees Of Columbia University In The City Of New York Hierarchical assembly of nanostructured organic heterojunctions for photovoltaic devices
EP2362421A1 (en) 2010-02-26 2011-08-31 STMicroelectronics S.r.l. Tailorable flexible sheet of monolithically fabricated array of separable cells each comprising a wholly organic, integrated circuit adapted to perform a specific function
JP2011181591A (ja) * 2010-02-26 2011-09-15 Sumitomo Chemical Co Ltd 薄膜半導体装置、薄膜半導体製造装置及び薄膜半導体製造方法
JP5565038B2 (ja) * 2010-03-30 2014-08-06 凸版印刷株式会社 電界効果型トランジスタ及びその製造方法並びに画像表示装置
WO2012021197A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof
WO2012021196A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method for manufacturing electronic devices and electronic devices thereof
JP2012015491A (ja) * 2010-06-04 2012-01-19 Semiconductor Energy Lab Co Ltd 光電変換装置
KR101856722B1 (ko) * 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
US20130308076A1 (en) * 2010-10-01 2013-11-21 Sharp Kabushiki Kaisha Flexible display and method for manufacturing the same
JP5982125B2 (ja) * 2011-01-12 2016-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5872912B2 (ja) * 2011-01-21 2016-03-01 株式会社半導体エネルギー研究所 発光装置
KR102040242B1 (ko) * 2011-05-12 2019-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 이용한 전자 기기
TWI527207B (zh) 2011-10-21 2016-03-21 友達光電股份有限公司 可撓式有機發光裝置及其製作方法
JP5674707B2 (ja) * 2012-05-22 2015-02-25 株式会社東芝 表示装置
DE102012224424A1 (de) * 2012-12-27 2014-07-17 Robert Bosch Gmbh Sensorsystem und Abdeckvorrichtung für ein Sensorsystem
US8878275B2 (en) * 2013-02-18 2014-11-04 Fairchild Semiconductor Corporation LDMOS device with double-sloped field plate
KR101775198B1 (ko) * 2013-04-09 2017-09-06 주식회사 엘지화학 적층체 및 이를 이용하여 제조된 기판을 포함하는 소자
WO2014188636A1 (ja) * 2013-05-21 2014-11-27 シャープ株式会社 表示装置の製造方法、表示装置及びフィルムデバイス
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
WO2015156891A2 (en) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
WO2017034644A2 (en) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Method of providing an electronic device and electronic device thereof
KR102466741B1 (ko) 2014-05-13 2022-11-15 아리조나 보드 오브 리젠츠 온 비하프 오브 아리조나 스테이트 유니버시티 전자 디바이스를 제공하는 방법
US10008611B2 (en) 2014-06-26 2018-06-26 Joled Inc. Thin film transistor and organic EL display device
DE202014103821U1 (de) * 2014-07-09 2014-09-09 Carmen Diegel Flexible elektrische Leiterstruktur
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
CN105118844A (zh) * 2015-07-01 2015-12-02 深圳市华星光电技术有限公司 一种柔性显示面板的制备方法及柔性显示面板
WO2017115225A2 (en) * 2015-12-28 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Flexible device, display device, and manufacturing methods thereof
KR102499288B1 (ko) * 2016-01-08 2023-02-14 삼성디스플레이 주식회사 표시 장치
CN111627967B (zh) 2016-09-08 2022-12-23 群创光电股份有限公司 显示设备
KR102079423B1 (ko) * 2016-10-31 2020-02-19 주식회사 엘지화학 폴리이미드 필름 형성용 조성물 및 이를 이용하여 제조된 폴리이미드 필름
CN106773206B (zh) * 2016-12-26 2019-03-19 武汉华星光电技术有限公司 显示面板的制造方法
CN106773207B (zh) * 2016-12-26 2020-01-17 武汉华星光电技术有限公司 显示面板的制造方法
CN206602182U (zh) * 2017-04-06 2017-10-31 京东方科技集团股份有限公司 一种天线结构及通讯设备
WO2019159614A1 (ja) * 2018-02-13 2019-08-22 パナソニックＩｐマネジメント株式会社 無線通信半導体装置およびその製造方法
JPWO2019203200A1 (ja) * 2018-04-17 2021-05-13 凸版印刷株式会社 薄膜トランジスタアレイ、薄膜トランジスタアレイ多面付け基板、およびそれらの製造方法
CN112310615B (zh) * 2019-07-31 2023-03-28 庆鼎精密电子（淮安）有限公司 天线模组及其制备方法
CN110838544A (zh) * 2019-11-08 2020-02-25 福仕保(江苏)新材料有限公司 超薄柔性有机电子器件制备与封装一体式结构设计和制备流程工艺
WO2021117400A1 (ja) 2019-12-11 2021-06-17 ヌヴォトンテクノロジージャパン株式会社 半導体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3406727B2 (ja) 1995-03-10 2003-05-12 株式会社半導体エネルギー研究所 表示装置
US5757456A (en) * 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
EP1039513A3 (en) 1999-03-26 2008-11-26 Canon Kabushiki Kaisha Method of producing a SOI wafer
JP2001284622A (ja) * 2000-03-31 2001-10-12 Canon Inc 半導体部材の製造方法及び太陽電池の製造方法
US6489659B2 (en) * 2000-04-20 2002-12-03 Agere Systems Inc. Non-hermetic APD
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4836445B2 (ja) * 2003-12-12 2011-12-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7439111B2 (en) * 2004-09-29 2008-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007251080A (ja) * 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法
TWI427702B (zh) * 2006-07-28 2014-02-21 半導體能源研究所股份有限公司 顯示裝置的製造方法
JP4611270B2 (ja) * 2006-09-27 2011-01-12 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
US7968382B2 (en) * 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
JP2009076877A5 (enExample)
JP2008211191A5 (enExample)
US10186674B2 (en) Thin-film device having barrier film and manufacturing method thereof
JP2012083733A5 (ja) 発光表示装置の作製方法
JP2021182553A (ja) 表示装置
JP2011085923A5 (ja) 発光装置の作製方法
JP2013175738A5 (ja) 発光装置の作製方法
TWI610431B (zh) 柔性封裝襯底及其製造方法和使用該襯底的ｏｌｅｄ封裝方法
JP2013033786A5 (ja) 半導体装置、半導体装置の製造方法、および電子機器
TWI658527B (zh) 剝離方法及剝離裝置
JP2008311635A5 (enExample)
JP2009135472A5 (enExample)
JP2009003434A5 (enExample)
EP2149915A3 (en) Method of manufacturing photovoltaic device
WO2010144213A3 (en) Integrated circuit light emission device, module and fabrication process
JP2009010356A5 (enExample)
JP2011003522A5 (ja) 発光装置の作製方法、及び発光装置
JP2010135762A5 (ja) 半導体装置の作製方法
JP2016535930A5 (enExample)
JP2010062527A (ja) 薄膜素子の製造方法
JP2012028755A5 (ja) 分離方法および半導体素子の作製方法
JP2013042180A5 (enExample)
WO2009044659A1 (ja) パターン形成方法
EP2437281A4 (en) SOS SUBSTRATE WITH LOW SURFACE DEFECT DENSITY
MX2010007723A (es) Dispositivos fotovoltaicos tratados con plasma.