JP5388500B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5388500B2
JP5388500B2 JP2008204280A JP2008204280A JP5388500B2 JP 5388500 B2 JP5388500 B2 JP 5388500B2 JP 2008204280 A JP2008204280 A JP 2008204280A JP 2008204280 A JP2008204280 A JP 2008204280A JP 5388500 B2 JP5388500 B2 JP 5388500B2
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layer
substrate
organic compound
semiconductor
fragile
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JP2008204280A
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Japanese (ja)
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JP2009076877A (ja
JP2009076877A5 (enExample
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敏行 伊佐
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008204280A priority Critical patent/JP5388500B2/ja
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Publication of JP2009076877A5 publication Critical patent/JP2009076877A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008204280A 2007-08-30 2008-08-07 半導体装置の作製方法 Expired - Fee Related JP5388500B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008204280A JP5388500B2 (ja) 2007-08-30 2008-08-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007224043 2007-08-30
JP2007224043 2007-08-30
JP2008204280A JP5388500B2 (ja) 2007-08-30 2008-08-07 半導体装置の作製方法

Publications (3)

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JP2009076877A JP2009076877A (ja) 2009-04-09
JP2009076877A5 JP2009076877A5 (enExample) 2011-07-28
JP5388500B2 true JP5388500B2 (ja) 2014-01-15

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JP2008204280A Expired - Fee Related JP5388500B2 (ja) 2007-08-30 2008-08-07 半導体装置の作製方法

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US (1) US7838328B2 (enExample)
JP (1) JP5388500B2 (enExample)
KR (1) KR101514627B1 (enExample)

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KR102771839B1 (ko) 2009-11-13 2025-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011068950A1 (en) * 2009-12-03 2011-06-09 The Trustees Of Columbia University In The City Of New York Hierarchical assembly of nanostructured organic heterojunctions for photovoltaic devices
JP2011181591A (ja) * 2010-02-26 2011-09-15 Sumitomo Chemical Co Ltd 薄膜半導体装置、薄膜半導体製造装置及び薄膜半導体製造方法
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WO2012021196A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method for manufacturing electronic devices and electronic devices thereof
JP2012015491A (ja) * 2010-06-04 2012-01-19 Semiconductor Energy Lab Co Ltd 光電変換装置
KR101856722B1 (ko) * 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
US20130308076A1 (en) * 2010-10-01 2013-11-21 Sharp Kabushiki Kaisha Flexible display and method for manufacturing the same
JP5982125B2 (ja) 2011-01-12 2016-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5872912B2 (ja) * 2011-01-21 2016-03-01 株式会社半導体エネルギー研究所 発光装置
KR102040242B1 (ko) * 2011-05-12 2019-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 이용한 전자 기기
TWI527207B (zh) 2011-10-21 2016-03-21 友達光電股份有限公司 可撓式有機發光裝置及其製作方法
JP5674707B2 (ja) * 2012-05-22 2015-02-25 株式会社東芝 表示装置
DE102012224424A1 (de) * 2012-12-27 2014-07-17 Robert Bosch Gmbh Sensorsystem und Abdeckvorrichtung für ein Sensorsystem
US8878275B2 (en) * 2013-02-18 2014-11-04 Fairchild Semiconductor Corporation LDMOS device with double-sloped field plate
KR101802558B1 (ko) * 2013-04-09 2017-11-29 주식회사 엘지화학 디스플레이 소자의 제조방법 및 이를 이용하여 제조된 디스플레이 소자
US10486359B2 (en) * 2013-05-21 2019-11-26 Sharp Kabushiki Kaisha Method for manufacturing display apparatus, display apparatus, and film device
WO2017034644A2 (en) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Method of providing an electronic device and electronic device thereof
WO2015156891A2 (en) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
JP2017518638A (ja) 2014-05-13 2017-07-06 アリゾナ・ボード・オブ・リージェンツ・フォー・アンド・オン・ビハーフ・オブ・アリゾナ・ステイト・ユニバーシティＡｒｉｚｏｎａ Ｂｏａｒｄ Ｏｆ Ｒｅｇｅｎｔｓ Ｆｏｒ Ａｎｄ Ｏｎ Ｂｅｈａｌｆ Ｏｆ Ａｒｉｚｏｎａ Ｓｔａｔｅ Ｕｎｉｖｅｒｓｉｔｙ 電子デバイスを提供する方法およびその電子デバイス
WO2015198604A1 (ja) * 2014-06-26 2015-12-30 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及び有機ｅｌ表示装置
DE202014103821U1 (de) * 2014-07-09 2014-09-09 Carmen Diegel Flexible elektrische Leiterstruktur
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
CN105118844A (zh) * 2015-07-01 2015-12-02 深圳市华星光电技术有限公司 一种柔性显示面板的制备方法及柔性显示面板
WO2017115225A2 (en) * 2015-12-28 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Flexible device, display device, and manufacturing methods thereof
KR102499288B1 (ko) * 2016-01-08 2023-02-14 삼성디스플레이 주식회사 표시 장치
CN107808892B (zh) * 2016-09-08 2020-06-26 群创光电股份有限公司 显示设备
KR102079423B1 (ko) * 2016-10-31 2020-02-19 주식회사 엘지화학 폴리이미드 필름 형성용 조성물 및 이를 이용하여 제조된 폴리이미드 필름
CN106773206B (zh) * 2016-12-26 2019-03-19 武汉华星光电技术有限公司 显示面板的制造方法
CN106773207B (zh) * 2016-12-26 2020-01-17 武汉华星光电技术有限公司 显示面板的制造方法
CN206602182U (zh) * 2017-04-06 2017-10-31 京东方科技集团股份有限公司 一种天线结构及通讯设备
JPWO2019159614A1 (ja) * 2018-02-13 2021-01-28 パナソニックＩｐマネジメント株式会社 無線通信半導体装置およびその製造方法
WO2019203200A1 (ja) * 2018-04-17 2019-10-24 凸版印刷株式会社 薄膜トランジスタアレイ、薄膜トランジスタアレイ多面付け基板、およびそれらの製造方法
CN112310615B (zh) * 2019-07-31 2023-03-28 庆鼎精密电子（淮安）有限公司 天线模组及其制备方法
CN110838544A (zh) * 2019-11-08 2020-02-25 福仕保(江苏)新材料有限公司 超薄柔性有机电子器件制备与封装一体式结构设计和制备流程工艺
CN114730823B (zh) 2019-12-11 2025-02-28 新唐科技日本株式会社 半导体装置

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KR20090023158A (ko) 2009-03-04
US20090061721A1 (en) 2009-03-05
JP2009076877A (ja) 2009-04-09
US7838328B2 (en) 2010-11-23
KR101514627B1 (ko) 2015-04-23

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