JP2008514438A - 微小電気機械システムデバイス内の構造物の電気機械的挙動の制御 - Google Patents
微小電気機械システムデバイス内の構造物の電気機械的挙動の制御 Download PDFInfo
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Abstract
【解決手段】
一実施形態においては、本発明は、微小電気機械システムデバイスを製造する方法を提供する。前記方法は、特徴的な電気機械的反応、及び特徴的な光学的反応を有する膜を具備する第1の層を製造することであって、前記特徴的な光学的反応は望ましく、前記特徴的な電気機械的反応は望ましくないことと、前記電気機械システムデバイスの起動中に蓄積される電荷を少なくとも減少させることによって前記特徴的な電気機械的反応を修正すること、とを具備する。
Description
一実施形態においては、ドライバコントローラ2029、アレイドライバ2022、及び表示アレイ2030は、本明細書において説明されるあらゆる型のディスプレイに関して適している。例えば、一実施形態においては、ドライバコントローラ2029は、従来のディスプレイコントローラ又は双安定表示ディスプレイコントローラ(インターフェロメトリックモジュレータコントローラ、等)である。他の実施形態においては、アレイドライバ2022は、従来のドライバ又は双安定表示ディスプレイドライバ(インターフェロメトリックモジュレータディスプレイ、等)である。一実施形態においては、ドライバコントローラ2029は、アレイドライバ2022と一体化されている。該実施形態は、携帯電話、腕時計、及びその他の小型ディスプレイ等のような高度に一体化されたシステムにおいて共通する実施形態である。さらに他の実施形態においては、ディスプレイアレイ2030は、典型的なディスプレイアレイ又は双安定表示ディスプレイアレイ(インターフェロメトリックモジュレータアレイを含むディスプレイ、等)である。
Claims (89)
- 基板を有するMEMSデバイスであって、
前記基板上に形成された電極層と、
前記電極層上に形成された誘電層と、
前記誘電層上に形成された第1のエッチバリア層と、
前記第1のエッチバリア層上に形成された第2のエッチバリア層と、
前記第2のエッチバリア層上方に配置された空洞部と、
前記空洞部の上方に配置された移動層と、を具備するMEMSデバイス。 - 前記第2のエッチバリア層は、酸化珪素を具備する請求項1に記載のデバイス。
- 前記誘電層は、酸化珪素を具備し、前記第1のエッチバリア層は、酸化アルミを具備する請求項2に記載のデバイス。
- 前記誘電層は、電荷トラップ層を具備する請求項2に記載のデバイス。
- 前記第2のエッチバリア層は、窒化珪素を具備する請求項1に記載のデバイス。
- 前記誘電層は、酸化珪素を具備し、前記第1のエッチバリア層は、酸化アルミを具備する請求項5に記載のデバイス。
- 前記誘電層は、窒化珪素を具備し、前記第1のエッチバリア層は、酸化アルミを具備する請求項5に記載のデバイス。
- 前記第2のエッチバリア層は、チタンを具備する請求項1に記載のデバイス。
- 前記第2のエッチバリア層は、モリブデンを具備する請求項1に記載のデバイス。
- 前記第2のエッチバリア層は、アモルファス珪素を具備する請求項1に記載のデバイス。
- 前記第2のエッチバリア層は、前記第1のエッチバリア層の表面上において可変の厚さを有する請求項1に記載のデバイス。
- 前記第2のエッチバリア層は、前記第1のエッチバリア層の一部分のみを被覆する請求項11に記載のデバイス。
- 前記電極層及び前記可動層のうちの少なくとも1つと電気的通信状態にあるプロセッサであって、画像データを処理するように構成されるプロセッサと、
前記プロセッサと電気的通信状態にあるメモリと、をさらに具備する請求項1に記載のデバイス。 - 前記電極層及び前記可動層のうちの少なくとも1つに少なくとも1つの信号を送るように構成されるドライバ回路をさらに具備する請求項13に記載のデバイス。
- 前記画像データの少なくとも一部分を前記ドライバ回路に送るように構成されるコントローラをさらに具備する請求項14に記載のデバイス。
- 前記画像データを前記プロセッサに送るように構成される画像ソースモジュールをさらに具備する請求項13に記載のデバイス。
- 前記画像ソースモジュールは、受信機、トランシーバ、及び送信機のうちの少なくとも1つを具備する請求項16に記載のデバイス。
- 入力データを受け取るように及び前記入力データを前記プロセッサに伝達するように構成される入力装置をさらに具備する請求項13に記載のデバイス。
- 請求項1に記載のデバイスを動作させる方法であって、第1の信号を前記電極層に印加し、第2の信号を前記可動層に印加して前記可動層を前記空洞部内で移動させることを具備する方法。
- 電気信号を伝導する伝導手段と、
前記伝導手段を支持する支持手段と、
前記伝導手段を電気的に絶縁する絶縁手段と、
前記絶縁手段を保護する第1の保護手段と、
前記第1の保護手段を保護する第2の保護手段と、
可変の大きさを有する空洞部の範囲を定める範囲設定手段と、を具備するMEMSデバイス。 - 前記支持手段は、透明な基板を具備し、前記伝導手段は、前記透明な基板上に形成された電極層を具備し、前記範囲設定手段は、空洞部によって前記第1の保護手段から分離された可動層を具備する請求項20に記載のデバイス。
- 前記絶縁手段は、前記伝導手段上に形成された誘電層を具備する請求項20又は21に記載のデバイス。
- 前記誘電層は、酸化珪素及び窒化珪素のうちの少なくとも1つを具備する請求項22に記載のデバイス。
- 前記第1の保護手段は、前記絶縁手段上に形成された第1のエッチバリア層を具備する請求項20、21、又は22に記載のデバイス。
- 前記エッチバリア層は、酸化アルミを具備する請求項24に記載のデバイス。
- 前記第2の保護手段は、前記第1の保護手段上に形成された第2のエッチバリア層を具備する請求項20、21、22、又は24に記載のデバイス。
- 前記第2のエッチバリア層は、酸化珪素、窒化珪素、アモルファス珪素、モリブデン、及びチタンのうちの少なくとも1つを具備する請求項26に記載のデバイス。
- MEMSデバイスを製造する方法であって、
電極層を基板上に堆積することと、
誘電層を前記電極層上に堆積することと、
エッチストップ層を前記誘電層上に堆積することと、
保護層を前記エッチストップ層上に堆積すること、とを具備する方法。 - 前記エッチストップ層は、酸化アルミを具備し、前記誘電層は、窒化珪素を具備する請求項28に記載の方法。
- 前記エッチストップ層は、酸化アルミを具備し、前記誘電層は、酸化珪素を具備する請求項28に記載の方法。
- 前記エッチストップ層は、酸化アルミを具備し、第2の酸化アルミ層を前記電極層上に堆積することをさらに具備し、前記誘電層は、前記第2の酸化アルミ層上に堆積される請求項28に記載の方法。
- 前記エッチストップ層は、酸化アルミを具備し、
少なくとも第1の犠牲層を前記保護層上に堆積することと、
反射層を前記犠牲層上に堆積することと、
前記第1の犠牲層をエッチングして前記第1の犠牲層を完全に除去し、それによって干渉空洞部を作り出すこと、とをさらに具備する請求項28に記載の方法。 - 前記第1の犠牲層をエッチングして前記第1の犠牲層を完全に除去することは、前記第1の犠牲層及び前記保護層の両層を前記エッチバリア層に関してエッチングすることを具備する請求項32に記載の方法。
- 前記第1の犠牲層をエッチングして前記第1の犠牲層を完全に除去することは、前記第1の犠牲層を前記保護層に関してエッチングすることを具備する請求項32に記載の方法。
- 前記保護層を前記エッチバリア層に関してエッチングすることをさらに具備し、前記保護層をエッチングすることは、前記第1の犠牲層の前記除去後に行われる請求項34に記載の方法。
- 予備エッチを行って前記第1の犠牲層の一部分を除去し、それによって前記保護層の一部分を露出させることと、
少なくとも第2の犠牲層を前記第1の犠牲層上に堆積すること、とをさらに具備し、前記第1の犠牲層を前記エッチングして前記第1の犠牲層を完全に除去することは、前記第2の犠牲層の少なくとも一部分を除去することを具備する請求項32に記載の方法。 - 前記保護層は、酸化珪素を具備する請求項36に記載の方法。
- 前記保護層は、窒化珪素を具備する請求項36に記載の方法。
- 前記保護層は、アモルファス珪素を具備する請求項36に記載の方法。
- 前記保護層は、モリブデンを具備する請求項36に記載の方法。
- 前記保護層は、チタンを具備する請求項36に記載の方法。
- 請求項36に記載の方法。
- 前記第1の犠牲層をエッチングして前記第1の犠牲層を完全に除去することは、前記保護層の少なくとも一部分を除去する請求項36に記載の方法。
- 請求項28に記載のプロセスによって製造されるMEMSデバイス。
- MEMSデバイスを製造する方法であって、
電極層を基板上に堆積することと、
第1の誘電層を前記電極層上に堆積することと、
第2の誘電層を前記第1の誘電層上に堆積することと、
第3の誘電層を前記第2の誘電層上に堆積することと、
第1の犠牲層を前記第3の誘電層上に堆積することと、
予備エッチを行って前記第1の犠牲層の一部分を除去し、それによって前記第3の誘電層の少なくとも一部分を露出させることと、
前記第1の犠牲層の残りの部分及び前記第3の誘電層の前記露出部分に第2の犠牲層を堆積すること、とを具備する方法。 - 前記第1の誘電層は、酸化珪素及び窒化珪素のうちの少なくとも1つを具備する請求項45に記載の方法。
- 前記第2の誘電層は、酸化アルミを具備する請求項45に記載の方法。
- 前記第3の誘電層は、保護層を具備する請求項45に記載の方法。
- 前記保護層は、酸化珪素、窒化珪素、アモルファス珪素、モリブデン、及びチタンのうちの少なくとも1つを具備する請求項48に記載の方法。
- 前記予備エッチは、前記第1の犠牲層を前記第3の犠牲層に関してエッチングする請求項45に記載の方法。
- 反射層を前記第2の犠牲層上に形成することと、
前記反射層をパターン形成して少なくとも2つの可動層を形成することと、
前記第1及び第2の犠牲層をエッチングし、それによって少なくとも第1の空洞部及び第2の空洞部を形成することであって、前記第1の空洞部の高さは、前記第2の空洞部の高さと異なること、とを具備する請求項45に記載の方法。 - 前記第1及び第2の犠牲層をエッチングすることは、前記第1及び第2の層を前記第2の誘電層に関してエッチングすることを具備する請求項51に記載の方法。
- 前記第1及び第2の犠牲材料をエッチングすることは、前記第3の誘電層の少なくとも一部分を除去する請求項52に記載の方法。
- 請求項45に記載の方法によって形成されるMEMSデバイス。
- 基板と、
基板上に配置された電極と、
前記電極上に配置された電荷トラップ層であって、正及び負の両電荷をトラップするように構成される電荷トラップ層と、
前記電荷トラップ層上に配置された第1のエッチバリア層と、を具備するMEMSデバイス。 - 前記第1のエッチバリア層は、酸化アルミを具備する請求項55に記載のデバイス。
- 前記電荷トラップ層は、窒化珪素及び五酸化タンタルのうちの少なくとも1つを具備する請求項55に記載のデバイス。
- 前記第1のエッチバリア層上に配置された第2のエッチバリア層をさらに具備する請求項55に記載のデバイス。
- 第2のエッチバリア層は、酸化珪素、窒化珪素、アモルファス珪素、モリブデン、及びチタンから成るグループから選択された材料を具備する請求項58に記載のデバイス。
- 前記電極層及び前記可動層のうちの少なくとも1つと電気的通信状態にあるプロセッサであって、画像データを処理するように構成されるプロセッサと、
前記プロセッサと電気的通信状態にあるメモリと、をさらに具備する請求項55に記載のデバイス。 - 前記電極層及び前記可動層のうちの少なくとも1つに少なくとも1つの信号を送るように構成されるドライバ回路をさらに具備する請求項60に記載のデバイス。
- 前記画像データの少なくとも一部分を前記ドライバ回路に送るように構成されるコントローラをさらに具備する請求項61に記載のデバイス。
- 前記画像データを前記プロセッサに送るように構成される画像ソースモジュールをさらに具備する請求項60に記載のデバイス。
- 前記画像ソースモジュールは、受信機、トランシーバ、及び送信機のうちの少なくとも1つを具備する請求項63に記載のデバイス。
- 入力データを受け取るように及び前記入力データを前記プロセッサに伝達するように構成される入力装置をさらに具備する請求項60に記載のデバイス。
- MEMSデバイスを製造する方法であって、
電極を基板上に堆積することと、
電荷トラップ層を前記電極上に堆積することであって、前記電荷トラップ層は正及び負の両電荷をトラップするように構成されることと、
第1のエッチバリア層を前記電荷トラップ層上に堆積すること、とを具備する方法。 - 前記第1のエッチバリア層は、酸化アルミを具備する請求項55に記載の方法。
- 前記電荷トラップ層は、窒化珪素を具備する請求項67に記載の方法。
- 前記電荷トラップ層は、五酸化タンタルを具備する請求項67に記載の方法。
- 第2のエッチバリア層を前記第1のエッチバリア層上に堆積することと、
第1の犠牲材料層を前記第2のエッチバリア層上に堆積することと、
第1のエッチを行って前記第1の犠牲材料層の一部分を除去し、それによって前記第2のエッチバリア層の一部分を露出させることと、
少なくとも第2の犠牲材料層を前記第1の犠牲材料層上及び前記第2のエッチバリア層の前記露出部分に堆積することと、
前記第1及び第2の犠牲材料層上に電極を堆積することと、
第2のエッチを行って少なくとも前記第1及び第2の犠牲材料層を除去し、それによって干渉空洞部を形成すること、とをさらに具備する請求項55に記載の方法。 - 前記第1のエッチは、前記第1の犠牲材料層を前記第2のエッチバリア層に関してエッチングする請求項70に記載の方法。
- 前記第2のエッチは、前記第1及び第2の犠牲材料層を前記第1のエッチバリア層に関してエッチングする請求項70に記載の方法。
- 前記第2のエッチバリア層は、酸化珪素、窒化珪素、アモルファス珪素、モリブデン、及びチタンから成るグループから選択された材料を具備する請求項70に記載の方法。
- 前記第1のエッチは、前記第1の犠牲層よりも前記第2のエッチバリア層のほうが耐性が高いエッチング液を用いて行われる請求項70に記載の方法。
- 前記第2のエッチバリアは、前記第2のエッチ中に少なくとも部分的に除去され、前記第1のエッチバリア層は、前記第2のエッチに対する耐性を有する請求項70に記載の方法。
- 請求項55に記載の方法によって製造されるMEMSデバイス。
- 基板と、
前記基板上に形成された電極層と、
前記電極層上に形成された窒化珪素層と、
前記窒化珪素層上に形成された酸化アルミ層と、を具備するMEMSデバイス。 - 前記酸化アルミ層上に形成された空洞部と、
前記空洞部上方に形成された可動層と、をさらに具備する請求項77に記載のデバイス。 - 前記デバイスは、インターフェロメトリックモジュレータである請求項78に記載のデバイス。
- 前記酸化アルミ層上に形成された酸化珪素層をさらに具備する請求項79に記載のデバイス。
- 前記酸化珪素層は、前記空洞部上方の前記可動層を支持する柱の下方の前記酸化アルミ層上にある請求項80に記載のデバイス。
- 前記酸化アルミ層上に形成された窒化珪素層をさらに具備する請求項78に記載のデバイス。
- 前記窒化珪素層は、前記空洞部上方の前記可動層を支持する柱の下方の前記酸化アルミ層上にある請求項82に記載のデバイス。
- 第2の酸化アルミ層をさらに具備し、前記第2の酸化アルミ層は、前記電極層上に形成され、前記窒化珪素層は、前記第2の酸化アルミ層上に形成される請求項77に記載のデバイス。
- 請求項78に記載のデバイスを動作させる方法であって、第1の信号を前記電極層に印加し、第2の信号を前記可動層に印加して前記可動層を前記空洞部内で移動させることを具備する方法。
- 電気信号を伝導する伝導手段と、
前記伝導手段を支持する支持手段と、
正及び負の両電荷をトラップする手段と、
電荷をトラップする前記手段を保護する手段と、を具備するMEMSデバイス。 - 前記支持手段は、透明な基板を具備し、電気信号を伝導する前記手段は、前記透明な基板上に形成された電極層を具備する請求項86に記載のデバイス。
- 前記電荷トラップ手段は、前記伝導手段上に形成された電荷トラップ材料層を具備し、前記電荷トラップ材料は、正及び負の両電荷をトラップするように構成される請求項86又は87に記載のデバイス。
- 前記保護手段は、前記電荷トラップ手段上に形成されたエッチバリア層を具備する請求項86、87、又は88に記載のデバイス。
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KR20070062584A (ko) | 2007-06-15 |
EP1803022A1 (en) | 2007-07-04 |
TW200626486A (en) | 2006-08-01 |
US8278726B2 (en) | 2012-10-02 |
US20100320555A1 (en) | 2010-12-23 |
US7781850B2 (en) | 2010-08-24 |
WO2006036435A1 (en) | 2006-04-06 |
CA2581670A1 (en) | 2006-04-06 |
TWI374854B (en) | 2012-10-21 |
AU2005290030A1 (en) | 2006-04-06 |
US20050250235A1 (en) | 2005-11-10 |
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