JP2008514019A - 半導体デバイス及び同デバイスを形成する方法 - Google Patents
半導体デバイス及び同デバイスを形成する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 56
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- 239000001301 oxygen Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- 125000006850 spacer group Chemical group 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical group 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 238000010405 reoxidation reaction Methods 0.000 abstract description 11
- 230000008021 deposition Effects 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 229920005591 polysilicon Polymers 0.000 abstract description 5
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 4
- 208000012868 Overgrowth Diseases 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 10
- 239000012212 insulator Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- -1 aluminum silicate nitride Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【選択図】 図6
Description
本発明の第2の態様によれば、添付の請求項に記載される電界効果トランジスタが提供される。
本発明の別の態様は従属請求項において請求される。
図1を参照すると、シリコン基板10が、公知の相補型酸化金属膜半導体(CMOS)下降技術によって成長される。或いは、基板はシリコン・オン・インシュレータ(SOI)基板とすることができる。
上記の実施例において、ゲート電極32及びゲート絶縁体22に関して参照したが、これらいずれも層として見なされる点を理解されたい。
22 ゲート絶縁体
40 酸素障壁層
46 段部
50 側壁スペーサ
62 ドレイン領域
Claims (15)
- 基板(10)と、
前記基板(10)に隣接して二酸化ケイ素層が配置され、該二酸化ケイ素層に隣接して配置される高誘電率材料の副層を含むゲート絶縁層(20、22)と、
ゲート絶縁層(20、22)の上に配置されるゲート電極層(30、32)と、
を備え、
前記ゲート電極の少なくとも側壁(34)を覆って酸素障壁層(40)が配置されることを特徴とする半導体デバイス。 - 前記酸素障壁層(40)が、前記ゲート絶縁層の側壁(24)を覆って配置される請求項1に記載のデバイス。
- 前記ゲート電極層(30、32)は、前記酸素障壁層(40)がその上に配置されることを特徴とする請求項1に記載のデバイス。
- 前記高誘電率材料が、酸化ハフニウム、酸化ジルコニウム、又はアルミニウムの1つ又はその組合せである前記請求項のいずれか1項に記載のデバイス。
- 前記酸素障壁層(40)に隣接してスペーサ材料(50)が配置されることを特徴とする前記請求項のいずれか1項に記載のデバイス。
- 前記酸素障壁層(40)が、アルミニウムと、酸素、窒素及び/又はケイ素のうちの少なくとも1つとを含有する化合物である前記請求項のいずれか1項に記載のデバイス。
- 前記酸素障壁層(40)が、スペーサ(50)として機能するように十分な厚みで配置され且つ適切に成形されることを特徴とする請求項5に記載のデバイス。
- 前記請求項のいずれか1項に記載の半導体デバイスを備えた電界効果トランジスタ。
- 前記電界効果トランジスタが、金属酸化膜半導体電界効果トランジスタである請求項8に記載のトランジスタ。
- 半導体デバイスを形成する方法であって、
基板(10)を形成する段階と、
前記基板(10)に隣接して二酸化ケイ素層を配置し、該二酸化ケイ素層に隣接して配置された高誘電率材料の副層を有するゲート絶縁層(20、22)を前記基板(10)上に配置する段階と、
前記ゲート絶縁層(20、22)の上にゲート電極層(30、32)を配置する段階と、
を含み、
前記ゲート電極層(30、32)を配置する段階が、前記ゲート電極層(30、32)の少なくとも側壁(34)を覆って酸素障壁層(40)を配置する段階によって特徴付けられる方法。 - 前記酸素障壁層(40)を前記ゲート電極層の少なくとも側壁を覆って堆積させる段階が更に、前記酸素障壁層(40)を前記ゲート絶縁層(20、22)の側壁を覆って堆積させる段階を含む請求項10に記載の方法。
- 前記酸素障壁層(40)を前記ゲート電極層(30、32)の少なくとも側壁(24)を覆って堆積させる段階が更に、前記酸素障壁層(40)を前記ゲート電極層(30、32)の上に堆積させる段階を含む請求項10に記載の方法。
- 前記酸素障壁層に隣接してスペーサ材料(50)を堆積させる段階を更に含む請求項10から12のいずれか1項に記載の方法。
- スペーサ(50)の機能を果たすように前記酸素障壁層(40)を十分に厚く堆積させ且つ適正に成形する段階を更に含む請求項13に記載の方法。
- 前記酸素障壁層(40)が、アルミニウムと、酸素、窒素、及び/又はケイ素の少なくとも1つとを含む化合物である請求項10から14のいずれか1項に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2004/052253 WO2006032300A1 (en) | 2004-09-21 | 2004-09-21 | Semiconductor device and method of forming the same |
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JP2008514019A true JP2008514019A (ja) | 2008-05-01 |
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JP2007532781A Pending JP2008514019A (ja) | 2004-09-21 | 2004-09-21 | 半導体デバイス及び同デバイスを形成する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080135951A1 (ja) |
EP (1) | EP1794782A1 (ja) |
JP (1) | JP2008514019A (ja) |
CN (1) | CN101027758A (ja) |
TW (1) | TW200633215A (ja) |
WO (1) | WO2006032300A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005089165A2 (en) * | 2004-03-10 | 2005-09-29 | Nanosys, Inc. | Nano-enabled memory devices and anisotropic charge carrying arrays |
US20090309150A1 (en) | 2008-06-13 | 2009-12-17 | Infineon Technologies Ag | Semiconductor Device And Method For Making Semiconductor Device |
JP4573903B2 (ja) * | 2008-06-13 | 2010-11-04 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
JP5484853B2 (ja) * | 2008-10-10 | 2014-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8415677B2 (en) | 2010-01-20 | 2013-04-09 | International Business Machines Corporation | Field-effect transistor device having a metal gate stack with an oxygen barrier layer |
CN102487003B (zh) * | 2010-12-01 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 辅助侧墙的形成方法 |
TWI625792B (zh) | 2014-06-09 | 2018-06-01 | 聯華電子股份有限公司 | 半導體元件及其製作方法 |
CN104748053A (zh) * | 2015-03-30 | 2015-07-01 | 京东方科技集团股份有限公司 | 光源及其制备方法、可裁切照明装置及其制备方法 |
US11031490B2 (en) * | 2019-06-27 | 2021-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd | Fabrication of field effect transistors with ferroelectric materials |
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JPS6480076A (en) * | 1987-09-21 | 1989-03-24 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH01258471A (ja) * | 1988-04-08 | 1989-10-16 | Matsushita Electron Corp | Mos型半導体装置の製造方法 |
JPH02280356A (ja) * | 1989-04-20 | 1990-11-16 | Matsushita Electron Corp | 半導体装置 |
JPH04229623A (ja) * | 1990-05-21 | 1992-08-19 | Motorola Inc | 導電構造体を半導体素子内に選択的に封入する工程 |
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US6657267B1 (en) * | 2002-06-06 | 2003-12-02 | Advanced Micro Devices, Inc. | Semiconductor device and fabrication technique using a high-K liner for spacer etch stop |
-
2004
- 2004-09-21 WO PCT/EP2004/052253 patent/WO2006032300A1/en active Application Filing
- 2004-09-21 EP EP04787180A patent/EP1794782A1/en not_active Withdrawn
- 2004-09-21 CN CNA2004800440415A patent/CN101027758A/zh active Pending
- 2004-09-21 JP JP2007532781A patent/JP2008514019A/ja active Pending
- 2004-09-21 US US11/575,721 patent/US20080135951A1/en not_active Abandoned
-
2005
- 2005-09-20 TW TW094132541A patent/TW200633215A/zh unknown
Patent Citations (11)
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JPS6480076A (en) * | 1987-09-21 | 1989-03-24 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH01258471A (ja) * | 1988-04-08 | 1989-10-16 | Matsushita Electron Corp | Mos型半導体装置の製造方法 |
JPH02280356A (ja) * | 1989-04-20 | 1990-11-16 | Matsushita Electron Corp | 半導体装置 |
JPH04229623A (ja) * | 1990-05-21 | 1992-08-19 | Motorola Inc | 導電構造体を半導体素子内に選択的に封入する工程 |
JPH05218211A (ja) * | 1991-12-13 | 1993-08-27 | Nec Corp | セルフアライン・コンタクト孔の形成方法 |
JPH05259106A (ja) * | 1992-03-12 | 1993-10-08 | Toshiba Corp | 半導体装置の製造方法 |
JPH0945705A (ja) * | 1995-08-02 | 1997-02-14 | Hitachi Ltd | 半導体装置 |
JP2000196088A (ja) * | 1998-12-28 | 2000-07-14 | Infineon Technol North America Corp | 電界効果トランジスタおよび形成方法 |
JP2003289139A (ja) * | 2002-03-27 | 2003-10-10 | Toshiba Corp | 電界効果トランジスタ |
JP2003338507A (ja) * | 2002-05-22 | 2003-11-28 | Renesas Technology Corp | Mis型半導体装置およびその製造方法 |
WO2004073072A1 (ja) * | 2003-02-17 | 2004-08-26 | National Institute Of Advanced Industrial Science And Technology | Mis型半導体装置およびmis型半導体装置の製造方法 |
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CN101027758A (zh) | 2007-08-29 |
US20080135951A1 (en) | 2008-06-12 |
EP1794782A1 (en) | 2007-06-13 |
TW200633215A (en) | 2006-09-16 |
WO2006032300A1 (en) | 2006-03-30 |
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