JP2008511711A - 新規ポリオルガノシロキサン誘電体 - Google Patents

新規ポリオルガノシロキサン誘電体 Download PDF

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Publication number
JP2008511711A
JP2008511711A JP2007528898A JP2007528898A JP2008511711A JP 2008511711 A JP2008511711 A JP 2008511711A JP 2007528898 A JP2007528898 A JP 2007528898A JP 2007528898 A JP2007528898 A JP 2007528898A JP 2008511711 A JP2008511711 A JP 2008511711A
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thin film
monomer
dielectric
formula
group
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Japanese (ja)
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JP2008511711A5 (https=
Inventor
テー ランタラ ユハ
パウラサリ ユリ
キルマ ジャンヌ
テー トーマネン ツロー
ピエティカイネン ヤルコ
ハッカー ナイジェル
ハジック アドミル
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シレクス オサケユキチュア
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Publication of JP2008511711A5 publication Critical patent/JP2008511711A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Polymers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007528898A 2004-08-31 2005-08-31 新規ポリオルガノシロキサン誘電体 Pending JP2008511711A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60555304P 2004-08-31 2004-08-31
US64430405P 2005-01-18 2005-01-18
PCT/FI2005/000373 WO2006024693A1 (en) 2004-08-31 2005-08-31 Novel polyorganosiloxane dielectric materials

Publications (2)

Publication Number Publication Date
JP2008511711A true JP2008511711A (ja) 2008-04-17
JP2008511711A5 JP2008511711A5 (https=) 2012-05-17

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JP2007528898A Pending JP2008511711A (ja) 2004-08-31 2005-08-31 新規ポリオルガノシロキサン誘電体

Country Status (6)

Country Link
US (2) US7504470B2 (https=)
EP (1) EP1787319A4 (https=)
JP (1) JP2008511711A (https=)
KR (1) KR101222428B1 (https=)
CN (1) CN101044604B (https=)
WO (1) WO2006024693A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017201560A (ja) * 2014-12-31 2017-11-09 エルジー ディスプレイ カンパニー リミテッド 電気活性フィルムを含む接触感応素子、これを含む表示装置、及び電気活性フィルムの製造方法
US11447605B2 (en) 2014-12-31 2022-09-20 Lg Display Co., Ltd. Touch sensitive device comprising electroactive film, display device comprising the same, and method of manufacturing the electroactive film

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US20060293478A1 (en) * 2005-06-13 2006-12-28 Rantala Juha T Silane monomers and siloxane polymers for semiconductor optoelectronics
US20070284687A1 (en) * 2006-06-13 2007-12-13 Rantala Juha T Semiconductor optoelectronics devices
WO2008071850A2 (en) * 2006-12-13 2008-06-19 Silecs Oy Novel nanoparticle containing siloxane polymers
TWI434891B (zh) * 2007-02-22 2014-04-21 賽倫斯股份有限公司 積體電路用高矽含量矽氧烷聚合物
JP2008222857A (ja) * 2007-03-13 2008-09-25 Jsr Corp 絶縁膜形成用組成物、ならびにシリカ系膜およびその形成方法
EP2209839A1 (en) * 2007-11-06 2010-07-28 Braggone OY Carbosilane polymer compositions for anti-reflective coatings
ATE524530T1 (de) * 2008-01-30 2011-09-15 Dow Corning Verwendung von glasartigen siliconbasierten hartbeschichtungen als trennbeschichtungen für druckbare elektronik
CN101939465A (zh) * 2008-03-26 2011-01-05 Jsr株式会社 化学气相沉积法用材料和含硅绝缘膜及其制造方法
US20110303284A1 (en) * 2010-06-09 2011-12-15 Miasole Glass barrier for diode assemblies
CN103319204B (zh) * 2013-06-05 2014-06-18 中国科学院上海硅酸盐研究所 桥联硅氧烷作为陶质文物加固剂的应用及加固方法
US10170297B2 (en) * 2013-08-22 2019-01-01 Versum Materials Us, Llc Compositions and methods using same for flowable oxide deposition
US9257399B2 (en) * 2013-10-17 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. 3D integrated circuit and methods of forming the same
US10340182B2 (en) * 2015-11-30 2019-07-02 International Business Machines Corporation Enhanced via fill material and processing for dual damscene integration
US10249489B2 (en) * 2016-11-02 2019-04-02 Versum Materials Us, Llc Use of silyl bridged alkyl compounds for dense OSG films
CN111793361B (zh) * 2019-04-02 2023-03-24 四川大学 低介电常数硅橡胶复合薄膜及其制备方法、应用

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US11447605B2 (en) 2014-12-31 2022-09-20 Lg Display Co., Ltd. Touch sensitive device comprising electroactive film, display device comprising the same, and method of manufacturing the electroactive film

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WO2006024693A1 (en) 2006-03-09
KR20070054705A (ko) 2007-05-29
EP1787319A4 (en) 2011-06-29
EP1787319A1 (en) 2007-05-23
CN101044604B (zh) 2011-11-16
KR101222428B1 (ko) 2013-01-15
US7504470B2 (en) 2009-03-17
CN101044604A (zh) 2007-09-26
US20060058487A1 (en) 2006-03-16

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