KR101222428B1 - 폴리유기실록산 유전 물질 - Google Patents

폴리유기실록산 유전 물질 Download PDF

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KR101222428B1
KR101222428B1 KR1020077007080A KR20077007080A KR101222428B1 KR 101222428 B1 KR101222428 B1 KR 101222428B1 KR 1020077007080 A KR1020077007080 A KR 1020077007080A KR 20077007080 A KR20077007080 A KR 20077007080A KR 101222428 B1 KR101222428 B1 KR 101222428B1
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South Korea
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thin film
groups
monomer
dielectric
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KR20070054705A (ko
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주하 티. 란탈라
지리 파울라사아리
잔느 킬메
투로 티. 토르마넨
자르코 피에티케이넨
니겔 헤커
에드미르 헤드직
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질렉스 오와이
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/098—Manufacture or treatment of dielectric parts thereof by filling between adjacent conductive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Polymers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020077007080A 2004-08-31 2005-08-31 폴리유기실록산 유전 물질 Expired - Lifetime KR101222428B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US60555304P 2004-08-31 2004-08-31
US60/605,553 2004-08-31
US64430405P 2005-01-18 2005-01-18
US60/644,304 2005-01-18
PCT/FI2005/000373 WO2006024693A1 (en) 2004-08-31 2005-08-31 Novel polyorganosiloxane dielectric materials

Publications (2)

Publication Number Publication Date
KR20070054705A KR20070054705A (ko) 2007-05-29
KR101222428B1 true KR101222428B1 (ko) 2013-01-15

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KR1020077007080A Expired - Lifetime KR101222428B1 (ko) 2004-08-31 2005-08-31 폴리유기실록산 유전 물질

Country Status (6)

Country Link
US (2) US7504470B2 (https=)
EP (1) EP1787319A4 (https=)
JP (1) JP2008511711A (https=)
KR (1) KR101222428B1 (https=)
CN (1) CN101044604B (https=)
WO (1) WO2006024693A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060293478A1 (en) * 2005-06-13 2006-12-28 Rantala Juha T Silane monomers and siloxane polymers for semiconductor optoelectronics
US20070284687A1 (en) * 2006-06-13 2007-12-13 Rantala Juha T Semiconductor optoelectronics devices
WO2008071850A2 (en) * 2006-12-13 2008-06-19 Silecs Oy Novel nanoparticle containing siloxane polymers
TWI434891B (zh) * 2007-02-22 2014-04-21 賽倫斯股份有限公司 積體電路用高矽含量矽氧烷聚合物
JP2008222857A (ja) * 2007-03-13 2008-09-25 Jsr Corp 絶縁膜形成用組成物、ならびにシリカ系膜およびその形成方法
EP2209839A1 (en) * 2007-11-06 2010-07-28 Braggone OY Carbosilane polymer compositions for anti-reflective coatings
ATE524530T1 (de) * 2008-01-30 2011-09-15 Dow Corning Verwendung von glasartigen siliconbasierten hartbeschichtungen als trennbeschichtungen für druckbare elektronik
CN101939465A (zh) * 2008-03-26 2011-01-05 Jsr株式会社 化学气相沉积法用材料和含硅绝缘膜及其制造方法
US20110303284A1 (en) * 2010-06-09 2011-12-15 Miasole Glass barrier for diode assemblies
CN103319204B (zh) * 2013-06-05 2014-06-18 中国科学院上海硅酸盐研究所 桥联硅氧烷作为陶质文物加固剂的应用及加固方法
US10170297B2 (en) * 2013-08-22 2019-01-01 Versum Materials Us, Llc Compositions and methods using same for flowable oxide deposition
US9257399B2 (en) * 2013-10-17 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. 3D integrated circuit and methods of forming the same
EP3040388B1 (en) 2014-12-31 2017-08-23 LG Display Co., Ltd. Touch sensitive device comprising electroactive film, display device comprising the same, and method of manufacturing the electroactive film
KR102431597B1 (ko) * 2014-12-31 2022-08-11 엘지디스플레이 주식회사 전기활성 필름을 포함하는 접촉 감응 소자, 이를 포함하는 표시 장치 및 전기활성 필름의 제조 방법
US10340182B2 (en) * 2015-11-30 2019-07-02 International Business Machines Corporation Enhanced via fill material and processing for dual damscene integration
US10249489B2 (en) * 2016-11-02 2019-04-02 Versum Materials Us, Llc Use of silyl bridged alkyl compounds for dense OSG films
CN111793361B (zh) * 2019-04-02 2023-03-24 四川大学 低介电常数硅橡胶复合薄膜及其制备方法、应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570772A (ja) * 1991-09-11 1993-03-23 Konica Corp 有機薄膜エレクトロルミネツセンス素子
KR20030029793A (ko) * 2000-07-31 2003-04-16 룩심 코포레이션 유전체 도파관을 갖는 플라즈마 램프
KR100383103B1 (ko) * 2000-04-28 2003-05-12 주식회사 엘지화학 저유전 절연재료의 제조방법
US20030216058A1 (en) * 2000-04-28 2003-11-20 Lg Chem Investment, Ltd., A Korea Corporation Process for preparing insulating material having low dielectric constant

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1427050A (fr) * 1964-01-29 1966-02-04 Dow Corning Procédé de préparation de polymères siloxanes à partir de silanes
US4504549A (en) * 1983-05-20 1985-03-12 Union Carbide Corporation Elastomeric silicone finishes applied to substrates and method of preparing same
JP2574403B2 (ja) * 1988-06-13 1997-01-22 富士通株式会社 有機ケイ素重合体及びその製法ならびにそれを使用した半導体装置
DE4006371A1 (de) * 1990-03-01 1991-09-05 Hoechst Ag Faserverstaerkte verbundwerkstoffe und verfahren zu ihrer herstellung
US5204141A (en) * 1991-09-18 1993-04-20 Air Products And Chemicals, Inc. Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources
KR940010290B1 (ko) * 1991-12-24 1994-10-22 한국과학기술연구원 비스실릴메탄 및 그들의 제조방법
KR940010291B1 (ko) * 1992-01-23 1994-10-22 한국과학기술연구원 비스실릴알칸 및 그들의 제조방법
JP2951524B2 (ja) * 1993-12-10 1999-09-20 財団法人韓国科学技術研究院 トリスシリルメタンの製造方法
JP2511244B2 (ja) * 1993-12-22 1996-06-26 財団法人韓国科学技術研究院 トリス（シリル）アルカンとその製造方法
JP4739473B2 (ja) * 1999-01-28 2011-08-03 日立化成工業株式会社 シリカ系被膜形成用塗布液、シリカ系被膜及びこれを用いた半導体装置
JP3084367B1 (ja) 1999-03-17 2000-09-04 キヤノン販売株式会社 層間絶縁膜の形成方法及び半導体装置
KR100306574B1 (ko) * 1999-04-13 2001-09-13 박호군 탈할로겐화수소 반응으로 유기할로겐 화합물에 실란을 결합시키는 방법
US6696538B2 (en) * 1999-07-27 2004-02-24 Lg Chemical Ltd. Semiconductor interlayer dielectric material and a semiconductor device using the same
JP4320855B2 (ja) * 1999-08-09 2009-08-26 Ｊｓｒ株式会社 絶縁膜形成用組成物
US6410150B1 (en) * 1999-09-29 2002-06-25 Jsr Corporation Composition for film formation, method of film formation, and insulating film
US6410151B1 (en) * 1999-09-29 2002-06-25 Jsr Corporation Composition for film formation, method of film formation, and insulating film
JP4022802B2 (ja) * 1999-09-29 2007-12-19 Ｊｓｒ株式会社 膜形成用組成物、膜の形成方法および絶縁膜
US6558747B2 (en) * 1999-09-29 2003-05-06 Kabushiki Kaisha Toshiba Method of forming insulating film and process for producing semiconductor device
JP4195773B2 (ja) * 2000-04-10 2008-12-10 Ｊｓｒ株式会社 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜
JP2001254052A (ja) * 2000-03-13 2001-09-18 Jsr Corp 膜形成用組成物、膜形成用組成物の形成方法およびシリカ系膜
US7128976B2 (en) * 2000-04-10 2006-10-31 Jsr Corporation Composition for film formation, method of film formation, and silica-based film
JP2001308082A (ja) * 2000-04-20 2001-11-02 Nec Corp 液体有機原料の気化方法及び絶縁膜の成長方法
JP3705122B2 (ja) * 2000-05-16 2005-10-12 Ｊｓｒ株式会社 有機ケイ素系重合体の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
US6465368B2 (en) * 2000-05-16 2002-10-15 Jsr Corporation Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film
JP4368498B2 (ja) * 2000-05-16 2009-11-18 Ｎｅｃエレクトロニクス株式会社 半導体装置、半導体ウェーハおよびこれらの製造方法
EP1160848B1 (en) * 2000-05-22 2011-10-05 JSR Corporation Composition for silica-based film formation
KR100453211B1 (ko) * 2000-11-01 2004-10-15 한국과학기술연구원 유기 실란의 제조방법
JP2002167438A (ja) * 2000-11-29 2002-06-11 Jsr Corp ケイ素ポリマー、膜形成用組成物および絶縁膜形成用材料
JP3588603B2 (ja) * 2000-12-15 2004-11-17 株式会社東芝 絶縁膜の形成方法および半導体装置の製造方法
KR100798186B1 (ko) * 2001-02-22 2008-01-24 제너럴 일렉트릭 캄파니 발수성 텍스타일 마무리제 및 제조방법
JP2002285086A (ja) * 2001-03-26 2002-10-03 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
US7132363B2 (en) * 2001-03-27 2006-11-07 Advanced Micro Devices, Inc. Stabilizing fluorine etching of low-k materials
EP1298176B1 (en) * 2001-09-28 2007-01-03 JSR Corporation Stacked film insulating film and substrate for semiconductor
JP4513249B2 (ja) * 2001-09-28 2010-07-28 Ｊｓｒ株式会社 銅ダマシン構造の製造方法
AU2003216067A1 (en) * 2002-01-17 2003-09-02 Silecs Oy Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
TW200303846A (en) * 2002-02-06 2003-09-16 Asahi Chemical Ind Coating compositions for forming insulating thin films
JP4424892B2 (ja) * 2002-08-06 2010-03-03 旭化成株式会社 絶縁性薄膜製造用塗布組成物
TWI240959B (en) * 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
KR100506695B1 (ko) * 2003-06-02 2005-08-08 삼성전자주식회사 실록산계 수지 및 이를 이용한 반도체 층간 절연막
JP2005139265A (ja) * 2003-11-05 2005-06-02 Tokyo Ohka Kogyo Co Ltd シリカ系被膜形成用塗布液
JP4535280B2 (ja) * 2004-07-09 2010-09-01 Ｊｓｒ株式会社 有機シリカ系膜の形成方法
US7892648B2 (en) * 2005-01-21 2011-02-22 International Business Machines Corporation SiCOH dielectric material with improved toughness and improved Si-C bonding

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570772A (ja) * 1991-09-11 1993-03-23 Konica Corp 有機薄膜エレクトロルミネツセンス素子
KR100383103B1 (ko) * 2000-04-28 2003-05-12 주식회사 엘지화학 저유전 절연재료의 제조방법
US20030216058A1 (en) * 2000-04-28 2003-11-20 Lg Chem Investment, Ltd., A Korea Corporation Process for preparing insulating material having low dielectric constant
KR20030029793A (ko) * 2000-07-31 2003-04-16 룩심 코포레이션 유전체 도파관을 갖는 플라즈마 램프

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Publication number Publication date
US20100317179A1 (en) 2010-12-16
WO2006024693A1 (en) 2006-03-09
KR20070054705A (ko) 2007-05-29
EP1787319A4 (en) 2011-06-29
JP2008511711A (ja) 2008-04-17
EP1787319A1 (en) 2007-05-23
CN101044604B (zh) 2011-11-16
US7504470B2 (en) 2009-03-17
CN101044604A (zh) 2007-09-26
US20060058487A1 (en) 2006-03-16

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