JP2008511139A - イオン注入のために表面汚染物質をその場で除去する装置及び方法 - Google Patents

イオン注入のために表面汚染物質をその場で除去する装置及び方法 Download PDF

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Publication number
JP2008511139A
JP2008511139A JP2007528008A JP2007528008A JP2008511139A JP 2008511139 A JP2008511139 A JP 2008511139A JP 2007528008 A JP2007528008 A JP 2007528008A JP 2007528008 A JP2007528008 A JP 2007528008A JP 2008511139 A JP2008511139 A JP 2008511139A
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Japan
Prior art keywords
wafer
chamber
implantation
plasma
contaminants
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Pending
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JP2007528008A
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English (en)
Japanese (ja)
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JP2008511139A5 (https=
Inventor
ワルサー、スティーヴ
メータ、サンディープ
ヴァリアム、ナウシャド
ジョン、ウキョ
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バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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Publication of JP2008511139A publication Critical patent/JP2008511139A/ja
Publication of JP2008511139A5 publication Critical patent/JP2008511139A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0055—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/002—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ultraviolet light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2007528008A 2004-08-20 2005-08-18 イオン注入のために表面汚染物質をその場で除去する装置及び方法 Pending JP2008511139A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/922,710 US20060040499A1 (en) 2004-08-20 2004-08-20 In situ surface contaminant removal for ion implanting
PCT/US2005/029387 WO2006023637A2 (en) 2004-08-20 2005-08-18 In situ surface contaminant removal for ion implanting

Publications (2)

Publication Number Publication Date
JP2008511139A true JP2008511139A (ja) 2008-04-10
JP2008511139A5 JP2008511139A5 (https=) 2008-09-25

Family

ID=35910169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007528008A Pending JP2008511139A (ja) 2004-08-20 2005-08-18 イオン注入のために表面汚染物質をその場で除去する装置及び方法

Country Status (6)

Country Link
US (2) US20060040499A1 (https=)
JP (1) JP2008511139A (https=)
KR (1) KR20070041595A (https=)
CN (1) CN101006198A (https=)
TW (1) TWI268547B (https=)
WO (1) WO2006023637A2 (https=)

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US20060040499A1 (en) * 2004-08-20 2006-02-23 Steve Walther In situ surface contaminant removal for ion implanting
US7923424B2 (en) * 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
KR101264687B1 (ko) * 2006-06-21 2013-05-16 엘지디스플레이 주식회사 인쇄장비, 패턴형성방법 및 이를 이용한 액정표시장치제조방법
WO2009146744A1 (de) * 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
JP5395405B2 (ja) 2008-10-27 2014-01-22 東京エレクトロン株式会社 基板洗浄方法及び装置
CN101935883B (zh) * 2010-09-10 2012-05-02 北京工业大学 超高真空离子源晶片清洗系统
US8742373B2 (en) * 2010-12-10 2014-06-03 Varian Semiconductor Equipment Associates, Inc. Method of ionization
JP5750951B2 (ja) 2011-03-14 2015-07-22 富士通株式会社 エッチングする方法及びエッチング装置
CN102644052B (zh) * 2012-05-03 2014-02-05 中国科学院光电技术研究所 一种配置紫外光照射清洁功能的真空镀膜机
CN103894377B (zh) * 2013-12-25 2017-07-21 韦小凤 一种紫外光和等离子体联合清洗器
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CN104465292B (zh) * 2014-11-28 2017-05-03 上海华力微电子有限公司 一种离子注入机的预处理方法
GB201615114D0 (en) * 2016-09-06 2016-10-19 Spts Technologies Ltd A Method and system of monitoring and controlling deformation of a wafer substrate
US10224212B2 (en) * 2017-01-27 2019-03-05 Lam Research Corporation Isotropic etching of film with atomic layer control
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN109546012B (zh) * 2018-11-23 2021-10-26 京东方科技集团股份有限公司 有机膜的刻蚀方法和显示基板显示区域电路的修补方法
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
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US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
CN112921272A (zh) * 2021-01-26 2021-06-08 西安钛斗金属制品科技有限公司 一种低摩擦TiN膜层的制备方法
CN112820813A (zh) * 2021-02-20 2021-05-18 聚灿光电科技（宿迁）有限公司 烤箱及可见光通信用led晶圆片
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
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CN114496852B (zh) * 2022-01-25 2022-11-29 永耀实业(深圳)有限公司 一种用于集成电路生产线的离子注入机
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JPH0536621A (ja) * 1991-07-25 1993-02-12 Canon Inc 半導体表面処理方法及び装置
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JPH10340857A (ja) * 1997-06-10 1998-12-22 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体製造装置
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JPS63119527A (ja) * 1986-11-07 1988-05-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH01207930A (ja) * 1988-02-16 1989-08-21 Oki Electric Ind Co Ltd 表面改質法
JPH0536621A (ja) * 1991-07-25 1993-02-12 Canon Inc 半導体表面処理方法及び装置
JPH0992199A (ja) * 1995-09-27 1997-04-04 Nissin Electric Co Ltd イオンビーム発生方法およびその装置
JPH10340857A (ja) * 1997-06-10 1998-12-22 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体製造装置
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Also Published As

Publication number Publication date
US7544959B2 (en) 2009-06-09
WO2006023637A3 (en) 2007-03-01
US20080185537A1 (en) 2008-08-07
TWI268547B (en) 2006-12-11
KR20070041595A (ko) 2007-04-18
CN101006198A (zh) 2007-07-25
TW200614352A (en) 2006-05-01
US20060040499A1 (en) 2006-02-23
WO2006023637A2 (en) 2006-03-02

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