CN101006198A - 用于离子注入的现场表面污染物去除 - Google Patents

用于离子注入的现场表面污染物去除 Download PDF

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Publication number
CN101006198A
CN101006198A CNA2005800275709A CN200580027570A CN101006198A CN 101006198 A CN101006198 A CN 101006198A CN A2005800275709 A CNA2005800275709 A CN A2005800275709A CN 200580027570 A CN200580027570 A CN 200580027570A CN 101006198 A CN101006198 A CN 101006198A
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CN
China
Prior art keywords
wafer
chamber
plasma
radio frequency
exposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800275709A
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English (en)
Chinese (zh)
Inventor
史蒂夫·沃尔瑟
桑德普·梅塔
诺萨德·瓦里姆
尤克扬·杰奥格
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN101006198A publication Critical patent/CN101006198A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0055—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/002—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ultraviolet light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNA2005800275709A 2004-08-20 2005-08-18 用于离子注入的现场表面污染物去除 Pending CN101006198A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/922,710 2004-08-20
US10/922,710 US20060040499A1 (en) 2004-08-20 2004-08-20 In situ surface contaminant removal for ion implanting

Publications (1)

Publication Number Publication Date
CN101006198A true CN101006198A (zh) 2007-07-25

Family

ID=35910169

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800275709A Pending CN101006198A (zh) 2004-08-20 2005-08-18 用于离子注入的现场表面污染物去除

Country Status (6)

Country Link
US (2) US20060040499A1 (https=)
JP (1) JP2008511139A (https=)
KR (1) KR20070041595A (https=)
CN (1) CN101006198A (https=)
TW (1) TWI268547B (https=)
WO (1) WO2006023637A2 (https=)

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CN102644052A (zh) * 2012-05-03 2012-08-22 中国科学院光电技术研究所 一种配置紫外光照射清洁功能的真空镀膜机
CN102683198A (zh) * 2011-03-14 2012-09-19 富士通株式会社 蚀刻方法、制造半导体装置的方法以及蚀刻装置
US8475602B2 (en) 2008-10-27 2013-07-02 Toyko Electron Limited Substrate cleaning method and apparatus
CN103894377A (zh) * 2013-12-25 2014-07-02 韦小凤 一种紫外光和等离子体联合清洗器
CN104465292A (zh) * 2014-11-28 2015-03-25 上海华力微电子有限公司 一种离子注入机的预处理方法
CN112820813A (zh) * 2021-02-20 2021-05-18 聚灿光电科技（宿迁）有限公司 烤箱及可见光通信用led晶圆片
CN112921272A (zh) * 2021-01-26 2021-06-08 西安钛斗金属制品科技有限公司 一种低摩擦TiN膜层的制备方法
CN114496852A (zh) * 2022-01-25 2022-05-13 永耀实业(深圳)有限公司 一种用于集成电路生产线的离子注入机
CN117051370A (zh) * 2023-08-17 2023-11-14 中国人民解放军国防科技大学 一种激光诱导等离子体注入底材的装置

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US20060040499A1 (en) * 2004-08-20 2006-02-23 Steve Walther In situ surface contaminant removal for ion implanting
US7923424B2 (en) * 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
KR101264687B1 (ko) * 2006-06-21 2013-05-16 엘지디스플레이 주식회사 인쇄장비, 패턴형성방법 및 이를 이용한 액정표시장치제조방법
WO2009146744A1 (de) * 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
CN101935883B (zh) * 2010-09-10 2012-05-02 北京工业大学 超高真空离子源晶片清洗系统
US8742373B2 (en) * 2010-12-10 2014-06-03 Varian Semiconductor Equipment Associates, Inc. Method of ionization
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GB201615114D0 (en) * 2016-09-06 2016-10-19 Spts Technologies Ltd A Method and system of monitoring and controlling deformation of a wafer substrate
US10224212B2 (en) * 2017-01-27 2019-03-05 Lam Research Corporation Isotropic etching of film with atomic layer control
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN109546012B (zh) * 2018-11-23 2021-10-26 京东方科技集团股份有限公司 有机膜的刻蚀方法和显示基板显示区域电路的修补方法
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
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Publication number Priority date Publication date Assignee Title
US8475602B2 (en) 2008-10-27 2013-07-02 Toyko Electron Limited Substrate cleaning method and apparatus
CN102683198B (zh) * 2011-03-14 2015-05-13 富士通株式会社 蚀刻方法、制造半导体装置的方法以及蚀刻装置
CN102683198A (zh) * 2011-03-14 2012-09-19 富士通株式会社 蚀刻方法、制造半导体装置的方法以及蚀刻装置
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CN102644052B (zh) * 2012-05-03 2014-02-05 中国科学院光电技术研究所 一种配置紫外光照射清洁功能的真空镀膜机
CN102644052A (zh) * 2012-05-03 2012-08-22 中国科学院光电技术研究所 一种配置紫外光照射清洁功能的真空镀膜机
CN103894377A (zh) * 2013-12-25 2014-07-02 韦小凤 一种紫外光和等离子体联合清洗器
CN104465292A (zh) * 2014-11-28 2015-03-25 上海华力微电子有限公司 一种离子注入机的预处理方法
CN104465292B (zh) * 2014-11-28 2017-05-03 上海华力微电子有限公司 一种离子注入机的预处理方法
CN112921272A (zh) * 2021-01-26 2021-06-08 西安钛斗金属制品科技有限公司 一种低摩擦TiN膜层的制备方法
CN112820813A (zh) * 2021-02-20 2021-05-18 聚灿光电科技（宿迁）有限公司 烤箱及可见光通信用led晶圆片
CN114496852A (zh) * 2022-01-25 2022-05-13 永耀实业(深圳)有限公司 一种用于集成电路生产线的离子注入机
CN117051370A (zh) * 2023-08-17 2023-11-14 中国人民解放军国防科技大学 一种激光诱导等离子体注入底材的装置
CN117051370B (zh) * 2023-08-17 2025-10-21 中国人民解放军国防科技大学 一种激光诱导等离子体注入底材的装置

Also Published As

Publication number Publication date
US7544959B2 (en) 2009-06-09
WO2006023637A3 (en) 2007-03-01
US20080185537A1 (en) 2008-08-07
TWI268547B (en) 2006-12-11
KR20070041595A (ko) 2007-04-18
JP2008511139A (ja) 2008-04-10
TW200614352A (en) 2006-05-01
US20060040499A1 (en) 2006-02-23
WO2006023637A2 (en) 2006-03-02

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Open date: 20070725