US20060040499A1 - In situ surface contaminant removal for ion implanting - Google Patents

In situ surface contaminant removal for ion implanting Download PDF

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Publication number
US20060040499A1
US20060040499A1 US10/922,710 US92271004A US2006040499A1 US 20060040499 A1 US20060040499 A1 US 20060040499A1 US 92271004 A US92271004 A US 92271004A US 2006040499 A1 US2006040499 A1 US 2006040499A1
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US
United States
Prior art keywords
wafer
chamber
exposing
implant chamber
implant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/922,710
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English (en)
Inventor
Steve Walther
Sandeep Mehta
Naushad Variam
Ukyo Jeong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Priority to US10/922,710 priority Critical patent/US20060040499A1/en
Assigned to VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. reassignment VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JEONG, UKYO, MEHTA, SANDEEP, VARIAM, NAUSHAD, WALTHER, STEVE
Priority to KR1020077004635A priority patent/KR20070041595A/ko
Priority to PCT/US2005/029387 priority patent/WO2006023637A2/en
Priority to JP2007528008A priority patent/JP2008511139A/ja
Priority to CNA2005800275709A priority patent/CN101006198A/zh
Priority to TW094128295A priority patent/TWI268547B/zh
Publication of US20060040499A1 publication Critical patent/US20060040499A1/en
Priority to US12/099,420 priority patent/US7544959B2/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0055—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/002—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ultraviolet light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Definitions

  • the present invention relates generally to ion implantation, and more particularly, to in situ surface contaminant removal for ion implanting.
  • Semiconductor wafers that are to be ion implanted typically have contaminant materials and oxides on the wafer surface. These materials can contaminate the implant process and cause dose non-uniformity and reduced dose retained in the silicon.
  • the invention includes a method and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation.
  • the mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually.
  • implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment.
  • the preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.
  • a first aspect of the invention is directed to an ion implanting apparatus comprising: an implant chamber; means for generating ions for implanting a wafer in the chamber; and means for removing contaminants from a surface of the wafer in situ within the implant chamber.
  • a second aspect of the invention is directed to a method of removing contaminants from a surface of a wafer in situ of an ion implant apparatus, the method comprising: placing the wafer in an isolated chamber that is in communication with an implant chamber; and removing contaminants from a surface of the wafer in situ within one of the isolated chamber and the implant chamber.
  • a third aspect of the invention is directed to a method of removing contaminants from a surface of a wafer, the method comprising: placing the wafer in an isolated chamber that is in communication with an implant chamber; and removing contaminants from a surface of the wafer in situ within one of the isolated chamber and the implant chamber by conducting at least one of: exposing the surface to ultraviolet (UV) illumination; heating a platen that holds the wafer in the implant chamber; and controlling a radio frequency (RF) source of the implant chamber to conduct a low energy plasma etch
  • UV ultraviolet
  • RF radio frequency
  • FIG. 1 shows an ion implant apparatus according to a first embodiment of the invention.
  • FIG. 2 shows an ion implant apparatus according to a second embodiment of the invention.
  • FIG. 1 shows an ion implant apparatus 10 according to the invention.
  • Apparatus 10 includes an implant chamber 20 configured to receive a process gas 22 from a gas source 24 .
  • a gas pressure controller 25 may be provided by, for example, a combination of upstream controller and variable position throttle valve 23 .
  • An exhaust port 27 is coupled to one or more vacuum pump(s) 29 .
  • Pressure controller 25 operates to maintain implant chamber 20 pressure to a set value by fixing exhaust conductance and varying process gas 22 flow rate in a feedback loop to allow for changing gas demand.
  • a radio frequency (RF) source 26 is configured to resonate radio frequency currents in a radio frequency antenna 28 , which pass into implant chamber 20 and excite and ionize process gas 22 to generate plasma within the chamber.
  • RF radio frequency
  • RF source 26 is coupled, via an impedance match 42 , to antenna 28 that surrounds implant chamber 20 .
  • RF source 26 can be either pulsed or continuous.
  • Apparatus 10 also includes a platen 46 for holding a semiconductor wafer 48 , to be implanted within implant chamber 20 .
  • ion implant apparatus 10 may function using a glow discharge system in which a pulsed DC voltage (negative) is applied to the cathode (platen 46 ) as one would do anyway for implant. Under suitable conditions of this wafer bias voltage and process gas 22 pressure (e.g., for ⁇ 5 kV and 15 mTorr of BF 3 ) a glow discharge plasma is created. This is a pulsed plasma as the wafer bias is a pulsed signal.
  • the pulsed wafer bias voltage is typically applied to platen 46 with the other conductive chamber components connected to electrical ground.
  • the plasma may also be created by biasing a third electrode synchronously with the wafer bias, which may be used in cases where the wafer bias is too small to create the plasma.
  • the pulsed DC voltage applied depends on the desired implant energy and process gas 22 used. In this case, RF source 26 is not necessary.
  • the above-described plasma immersion ion implanter devices may be replaced by, for example, a low energy beamline implanter (not shown).
  • an isolated chamber 50 that is sealed for transport of wafers 48 to implant chamber 20 is also included. Isolated chamber 50 can include any now known or later developed load locks or wafer handler chambers.
  • the invention also includes a number of mechanisms for removing contaminants from a surface 60 of wafer 48 .
  • a first mechanism includes exposing wafer 48 to ultraviolet light.
  • one or more ultraviolet illumination devices 70 may be employed for exposing surface 60 to ultraviolet (UV) illumination.
  • a UV illumination device 72 is mounted within implant chamber 20 .
  • a UV illumination device 74 is mounted externally of process chamber 20 and transmits UV light through a window 76 of process chamber 20 .
  • a UV illumination device 78 may also be mounted to transmit UV light into isolated chamber 50 so that a wafer 48 may be de-contaminated during transport.
  • UV light may also be produced by RF source 26 resonating radio frequency currents to produce a UV emitting plasma, or by the above-described glow discharge system producing a UV emitting plasma.
  • Removal of contaminants under any of the UV light exposure embodiments also preferably includes exposing wafer 48 to a vacuum of better than 1 ⁇ 10 ⁇ 5 Torr (pressure equal to that value or less) by one or more vacuum pump(s) 29 .
  • a vacuum may also be applied therein in a conventional fashion.
  • a second mechanism for removing contaminants from surface 60 includes, as shown in FIG. 1 , heating wafer 48 .
  • this mechanism is implemented by heating platen 46 so as to heat wafer 48 in implant chamber 20 .
  • platen 46 may be provided with a heater 80 such as one or more embedded heating coils.
  • This mechanism may also include a temperature controller 82 for heater 80 including a thermocouple 84 and a heater controller 86 .
  • a gas portal 88 may also be provided for introducing a gas 90 between platen 46 and wafer 48 to improve heat transfer.
  • Gas 90 flow may be controlled by heater controller 86 by controlling a valve 92 .
  • Removal of contaminants by heating wafer 48 also preferably includes exposing wafer 48 to a high vacuum of better than 1 ⁇ 10 ⁇ 5 Torr (pressure equal to that value or less) by one or more vacuum pump(s) 29 .
  • a third mechanism for removing contaminants includes, as shown in FIG. 1 , controlling RF source 26 to conduct a low energy plasma etch 98 .
  • a pulsed glow discharge approach may be implemented that conducts a low energy plasma etch 98 .
  • low energy plasma etch 98 uses no greater than ⁇ 1000 V of wafer bias, with a suitable etching process gas (e.g., NF 3 , SiF 4 , BF 3 , F 2 , H 2 etc.).
  • a suitable etching process gas e.g., NF 3 , SiF 4 , BF 3 , F 2 , H 2 etc.
  • low energy plasma etch 98 may use one of: BF 3 , NF 3 and F 2 as a plasma gas source for a subsequent BF 3 plasma implantation.
  • the duration process may be controlled by monitoring the wafer pulsing current to detect the change in secondary electron emission as the wafer surface is altered.
  • a method of removing contaminants from a surface of a wafer 46 includes placing wafer 48 in isolated chamber 50 that is in communication with implant chamber 20 , and then removing contaminants from surface 60 of wafer 48 in situ within one of isolated chamber 50 and implant chamber 20 .
  • the removing step includes conducting at least one of: exposing surface 60 to ultraviolet (UV) illumination; heating wafer 48 ; and controlling RF source 26 of implant chamber 20 to conduct low energy plasma etch 98 .
  • UV ultraviolet

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
US10/922,710 2004-08-20 2004-08-20 In situ surface contaminant removal for ion implanting Abandoned US20060040499A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US10/922,710 US20060040499A1 (en) 2004-08-20 2004-08-20 In situ surface contaminant removal for ion implanting
KR1020077004635A KR20070041595A (ko) 2004-08-20 2005-08-18 이온 주입을 위한 인시튜 표면 오염물 제거
PCT/US2005/029387 WO2006023637A2 (en) 2004-08-20 2005-08-18 In situ surface contaminant removal for ion implanting
JP2007528008A JP2008511139A (ja) 2004-08-20 2005-08-18 イオン注入のために表面汚染物質をその場で除去する装置及び方法
CNA2005800275709A CN101006198A (zh) 2004-08-20 2005-08-18 用于离子注入的现场表面污染物去除
TW094128295A TWI268547B (en) 2004-08-20 2005-08-19 In situ surface contaminant removal for ion implanting
US12/099,420 US7544959B2 (en) 2004-08-20 2008-04-08 In situ surface contamination removal for ion implanting

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/922,710 US20060040499A1 (en) 2004-08-20 2004-08-20 In situ surface contaminant removal for ion implanting

Related Child Applications (1)

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US12/099,420 Continuation US7544959B2 (en) 2004-08-20 2008-04-08 In situ surface contamination removal for ion implanting

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US20060040499A1 true US20060040499A1 (en) 2006-02-23

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US12/099,420 Expired - Lifetime US7544959B2 (en) 2004-08-20 2008-04-08 In situ surface contamination removal for ion implanting

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US (2) US20060040499A1 (https=)
JP (1) JP2008511139A (https=)
KR (1) KR20070041595A (https=)
CN (1) CN101006198A (https=)
TW (1) TWI268547B (https=)
WO (1) WO2006023637A2 (https=)

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US20060183248A1 (en) * 2005-02-14 2006-08-17 Small Robert J Semiconductor cleaning using superacids
US20080185537A1 (en) * 2004-08-20 2008-08-07 Varian Semiconductor Equipment Associates, Inc. In situ surface contamination removal for ion implanting
WO2009146744A1 (de) * 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
CN101935883A (zh) * 2010-09-10 2011-01-05 北京工业大学 超高真空离子源晶片清洗系统
CN101093353B (zh) * 2006-06-21 2012-07-18 乐金显示有限公司 印刷装置、印刷方法以及使用其制造液晶显示器件的方法
US20150232380A1 (en) * 2014-02-20 2015-08-20 Corning Incorporated Uv photobleaching of glass having uv-induced colorization
CN107799411A (zh) * 2016-09-06 2018-03-13 Spts科技有限公司 监测和控制晶片衬底形变的方法和系统
US10508343B2 (en) 2011-03-14 2019-12-17 Fujitsu Limited Etching method for manufacturing semiconductor device
TWI806362B (zh) * 2017-01-27 2023-06-21 美商蘭姆研究公司 以原子層控制進行之膜的等向性蝕刻

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CN103894377B (zh) * 2013-12-25 2017-07-21 韦小凤 一种紫外光和等离子体联合清洗器
CN104465292B (zh) * 2014-11-28 2017-05-03 上海华力微电子有限公司 一种离子注入机的预处理方法
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
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CN109546012B (zh) * 2018-11-23 2021-10-26 京东方科技集团股份有限公司 有机膜的刻蚀方法和显示基板显示区域电路的修补方法
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CN112921272A (zh) * 2021-01-26 2021-06-08 西安钛斗金属制品科技有限公司 一种低摩擦TiN膜层的制备方法
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US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
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US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
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US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
CN114496852B (zh) * 2022-01-25 2022-11-29 永耀实业(深圳)有限公司 一种用于集成电路生产线的离子注入机
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
CN117051370B (zh) * 2023-08-17 2025-10-21 中国人民解放军国防科技大学 一种激光诱导等离子体注入底材的装置

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