WO2006023637A2 - In situ surface contaminant removal for ion implanting - Google Patents

In situ surface contaminant removal for ion implanting Download PDF

Info

Publication number
WO2006023637A2
WO2006023637A2 PCT/US2005/029387 US2005029387W WO2006023637A2 WO 2006023637 A2 WO2006023637 A2 WO 2006023637A2 US 2005029387 W US2005029387 W US 2005029387W WO 2006023637 A2 WO2006023637 A2 WO 2006023637A2
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
chamber
exposing
implant chamber
implant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/029387
Other languages
English (en)
French (fr)
Other versions
WO2006023637A3 (en
Inventor
Steve Walther
Sandeep Mehta
Naushad Variam
Ukyo Jeong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Priority to JP2007528008A priority Critical patent/JP2008511139A/ja
Publication of WO2006023637A2 publication Critical patent/WO2006023637A2/en
Anticipated expiration legal-status Critical
Publication of WO2006023637A3 publication Critical patent/WO2006023637A3/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0055—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/002—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ultraviolet light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Definitions

  • the present invention relates generally to ion implantation, and more particularly, to in
  • performance of devices on the wafer may be limited by the external environment in which they are
  • the invention includes a method and apparatus that introduce, within the ion implant
  • mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually.
  • a first aspect of the invention is directed to an ion implanting apparatus comprising: an
  • implant chamber means for generating ions for implanting a wafer in the chamber; and means
  • a second aspect of the invention is directed to a method of removing contaminants from a surface of a wafer in situ of an ion implant apparatus, the method comprising: placing the wafer in an isolated chamber that is in communication with an implant chamber; and removing
  • a third aspect of the invention is directed to a method of removing contaminants from a surface of a wafer, the method comprising: placing the wafer in an isolated chamber that is in
  • RF radio frequency
  • FIG. 1 shows an ion implant apparatus according to a first embodiment of the invention.
  • FIG. 2 shows an ion implant apparatus according to a second embodiment of the
  • FIG. 1 shows an ion implant apparatus 10 according to the attached drawings.
  • Apparatus 10 includes an implant chamber 20 configured to receive a process gas 22 from a gas source 24.
  • a gas pressure controller 25 may be provided by, for example, a
  • Pressure controller 25 operates to maintain implant
  • a radio frequency (RF) source 26 is configured to resonate radio frequency currents in a radio frequency antenna 28, which pass into implant chamber 20 and excite and ionize process gas 22 to generate plasma within the chamber.
  • RF source 26 is coupled, via an impedance match 42, to antenna 28 that surrounds
  • RF source 26 can be either pulsed or continuous.
  • Apparatus 10 also
  • a platen 46 for holding a semiconductor wafer 48, to be implanted within implant
  • ion implant apparatus 10 may function using a glow
  • process gas 22 pressure e.g., for -5 kV and 15 mTorr of BF 3 .
  • the pulsed wafer bias voltage is
  • the plasma may also be created by biasing a third electrode synchronously
  • the pulsed DC voltage applied depends on the desired implant energy and process gas
  • plasma immersion ion implanter devices may be replaced by, for example, a low
  • Isolated chamber 50 can include
  • the invention also includes a number of mechanisms for removing contaminants from a
  • a first mechanism includes exposing wafer 48 to ultraviolet light.
  • UV illumination devices 70 may be employed for exposing surface 60 to ultraviolet (UV) illumination.
  • a UV illumination device 72 is mounted within implant chamber 20.
  • a UV illumination device 72 is mounted within implant chamber 20.
  • FIG. 2 a UV illumination device 72 is mounted within implant chamber 20.
  • UV illumination device 74 is mounted externally of process chamber 20 and transmits UV light
  • a UV illumination device configured to illuminate a UV light.
  • a wafer 48 may be mounted to transmit UV light into isolated chamber 50 so that a wafer 48 may be
  • UV light may also be produced by RF source 26 resonating radio frequency currents to produce a UV emitting plasma, or by the above-described
  • the UV light exposure embodiments also preferably includes exposing wafer 48 to a vacuum of
  • I x 10 "5 Torr pressure equal to that value or less
  • a vacuum may also be applied therein in a
  • a second mechanism for removing contaminants from surface 60 includes, as shown in
  • FIG. 1 heating wafer 48.
  • this mechanism is implemented by heating platen
  • platen 46 may be
  • a heater 80 such as one or more embedded heating coils.
  • This mechanism may also include a temperature controller 82 for heater 80 including a thermocouple 84 and a heater controller 86.
  • a gas portal 88 may also be provided for introducing a gas 90 between platen 46 and wafer 48 to improve heat transfer. Gas 90 flow may be controlled by heater controller 86 by controlling a valve 92. Removal of contaminants by heating wafer 48 also preferably includes
  • one or more vacuum pump(s) 29 are less) by one or more vacuum pump(s) 29.
  • a third mechanism for removing contaminants includes, as shown in FIG. 1, controlling
  • RF source 26 to conduct a low energy plasma etch 98.
  • a pulsed glow discharge approach may be implemented that conducts a low energy plasma etch 98. m either case, low
  • energy plasma etch 98 uses no greater than -1000 V of wafer bias, with a suitable etching process
  • low energy plasma etch 98 may use one
  • duration process may be controlled by monitoring the wafer pulsing current to detect the change
  • invention includes placing wafer 48 in isolated chamber 50 that is in communication with
  • the removing step includes conducting at least one of: exposing surface 60 to ultraviolet (UV) illumination; heating wafer 48; and

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PCT/US2005/029387 2004-08-20 2005-08-18 In situ surface contaminant removal for ion implanting Ceased WO2006023637A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007528008A JP2008511139A (ja) 2004-08-20 2005-08-18 イオン注入のために表面汚染物質をその場で除去する装置及び方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/922,710 2004-08-20
US10/922,710 US20060040499A1 (en) 2004-08-20 2004-08-20 In situ surface contaminant removal for ion implanting

Publications (2)

Publication Number Publication Date
WO2006023637A2 true WO2006023637A2 (en) 2006-03-02
WO2006023637A3 WO2006023637A3 (en) 2007-03-01

Family

ID=35910169

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/029387 Ceased WO2006023637A2 (en) 2004-08-20 2005-08-18 In situ surface contaminant removal for ion implanting

Country Status (6)

Country Link
US (2) US20060040499A1 (https=)
JP (1) JP2008511139A (https=)
KR (1) KR20070041595A (https=)
CN (1) CN101006198A (https=)
TW (1) TWI268547B (https=)
WO (1) WO2006023637A2 (https=)

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US20060040499A1 (en) * 2004-08-20 2006-02-23 Steve Walther In situ surface contaminant removal for ion implanting
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Also Published As

Publication number Publication date
US7544959B2 (en) 2009-06-09
WO2006023637A3 (en) 2007-03-01
US20080185537A1 (en) 2008-08-07
TWI268547B (en) 2006-12-11
KR20070041595A (ko) 2007-04-18
CN101006198A (zh) 2007-07-25
JP2008511139A (ja) 2008-04-10
TW200614352A (en) 2006-05-01
US20060040499A1 (en) 2006-02-23

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