JP2008511139A5 - - Google Patents
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- Publication number
- JP2008511139A5 JP2008511139A5 JP2007528008A JP2007528008A JP2008511139A5 JP 2008511139 A5 JP2008511139 A5 JP 2008511139A5 JP 2007528008 A JP2007528008 A JP 2007528008A JP 2007528008 A JP2007528008 A JP 2007528008A JP 2008511139 A5 JP2008511139 A5 JP 2008511139A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage level
- bias voltage
- ion implantation
- implantation method
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/922,710 US20060040499A1 (en) | 2004-08-20 | 2004-08-20 | In situ surface contaminant removal for ion implanting |
| PCT/US2005/029387 WO2006023637A2 (en) | 2004-08-20 | 2005-08-18 | In situ surface contaminant removal for ion implanting |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008511139A JP2008511139A (ja) | 2008-04-10 |
| JP2008511139A5 true JP2008511139A5 (https=) | 2008-09-25 |
Family
ID=35910169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007528008A Pending JP2008511139A (ja) | 2004-08-20 | 2005-08-18 | イオン注入のために表面汚染物質をその場で除去する装置及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20060040499A1 (https=) |
| JP (1) | JP2008511139A (https=) |
| KR (1) | KR20070041595A (https=) |
| CN (1) | CN101006198A (https=) |
| TW (1) | TWI268547B (https=) |
| WO (1) | WO2006023637A2 (https=) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060040499A1 (en) * | 2004-08-20 | 2006-02-23 | Steve Walther | In situ surface contaminant removal for ion implanting |
| US7923424B2 (en) * | 2005-02-14 | 2011-04-12 | Advanced Process Technologies, Llc | Semiconductor cleaning using superacids |
| KR101264687B1 (ko) * | 2006-06-21 | 2013-05-16 | 엘지디스플레이 주식회사 | 인쇄장비, 패턴형성방법 및 이를 이용한 액정표시장치제조방법 |
| WO2009146744A1 (de) * | 2008-06-05 | 2009-12-10 | Osram Gesellschaft mit beschränkter Haftung | Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler |
| JP5395405B2 (ja) | 2008-10-27 | 2014-01-22 | 東京エレクトロン株式会社 | 基板洗浄方法及び装置 |
| CN101935883B (zh) * | 2010-09-10 | 2012-05-02 | 北京工业大学 | 超高真空离子源晶片清洗系统 |
| US8742373B2 (en) * | 2010-12-10 | 2014-06-03 | Varian Semiconductor Equipment Associates, Inc. | Method of ionization |
| JP5750951B2 (ja) | 2011-03-14 | 2015-07-22 | 富士通株式会社 | エッチングする方法及びエッチング装置 |
| CN102644052B (zh) * | 2012-05-03 | 2014-02-05 | 中国科学院光电技术研究所 | 一种配置紫外光照射清洁功能的真空镀膜机 |
| CN103894377B (zh) * | 2013-12-25 | 2017-07-21 | 韦小凤 | 一种紫外光和等离子体联合清洗器 |
| EP3107875B1 (en) * | 2014-02-20 | 2018-06-13 | Corning Incorporated | Uv photobleaching of glass having uv-induced colorization |
| CN104465292B (zh) * | 2014-11-28 | 2017-05-03 | 上海华力微电子有限公司 | 一种离子注入机的预处理方法 |
| GB201615114D0 (en) * | 2016-09-06 | 2016-10-19 | Spts Technologies Ltd | A Method and system of monitoring and controlling deformation of a wafer substrate |
| US10224212B2 (en) * | 2017-01-27 | 2019-03-05 | Lam Research Corporation | Isotropic etching of film with atomic layer control |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| CN109546012B (zh) * | 2018-11-23 | 2021-10-26 | 京东方科技集团股份有限公司 | 有机膜的刻蚀方法和显示基板显示区域电路的修补方法 |
| CN118315254A (zh) | 2019-01-22 | 2024-07-09 | 应用材料公司 | 用于控制脉冲电压波形的反馈回路 |
| US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| CN112921272A (zh) * | 2021-01-26 | 2021-06-08 | 西安钛斗金属制品科技有限公司 | 一种低摩擦TiN膜层的制备方法 |
| CN112820813A (zh) * | 2021-02-20 | 2021-05-18 | 聚灿光电科技（宿迁）有限公司 | 烤箱及可见光通信用led晶圆片 |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US12525441B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US20220399186A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| CN114496852B (zh) * | 2022-01-25 | 2022-11-29 | 永耀实业(深圳)有限公司 | 一种用于集成电路生产线的离子注入机 |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12586768B2 (en) | 2022-08-10 | 2026-03-24 | Applied Materials, Inc. | Pulsed voltage compensation for plasma processing applications |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| CN117051370B (zh) * | 2023-08-17 | 2025-10-21 | 中国人民解放军国防科技大学 | 一种激光诱导等离子体注入底材的装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58159842A (ja) * | 1982-03-17 | 1983-09-22 | Ricoh Co Ltd | 感光体の製造方法 |
| JPS63119527A (ja) * | 1986-11-07 | 1988-05-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| US4718974A (en) * | 1987-01-09 | 1988-01-12 | Ultraphase Equipment, Inc. | Photoresist stripping apparatus using microwave pumped ultraviolet lamp |
| JPH01207930A (ja) * | 1988-02-16 | 1989-08-21 | Oki Electric Ind Co Ltd | 表面改質法 |
| JPH0536621A (ja) * | 1991-07-25 | 1993-02-12 | Canon Inc | 半導体表面処理方法及び装置 |
| JPH0982495A (ja) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | プラズマ生成装置およびプラズマ生成方法 |
| JPH0992199A (ja) * | 1995-09-27 | 1997-04-04 | Nissin Electric Co Ltd | イオンビーム発生方法およびその装置 |
| JPH10340857A (ja) * | 1997-06-10 | 1998-12-22 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体製造装置 |
| JP3283477B2 (ja) * | 1997-10-27 | 2002-05-20 | 松下電器産業株式会社 | ドライエッチング方法および半導体装置の製造方法 |
| US6805139B1 (en) * | 1999-10-20 | 2004-10-19 | Mattson Technology, Inc. | Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing |
| US7183177B2 (en) * | 2000-08-11 | 2007-02-27 | Applied Materials, Inc. | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement |
| WO2004013371A2 (en) * | 2002-08-02 | 2004-02-12 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for plasma implantation without deposition of a layer of byproduct |
| JP4544447B2 (ja) * | 2002-11-29 | 2010-09-15 | パナソニック株式会社 | プラズマドーピング方法 |
| US20060040499A1 (en) * | 2004-08-20 | 2006-02-23 | Steve Walther | In situ surface contaminant removal for ion implanting |
-
2004
- 2004-08-20 US US10/922,710 patent/US20060040499A1/en not_active Abandoned
-
2005
- 2005-08-18 WO PCT/US2005/029387 patent/WO2006023637A2/en not_active Ceased
- 2005-08-18 KR KR1020077004635A patent/KR20070041595A/ko not_active Withdrawn
- 2005-08-18 CN CNA2005800275709A patent/CN101006198A/zh active Pending
- 2005-08-18 JP JP2007528008A patent/JP2008511139A/ja active Pending
- 2005-08-19 TW TW094128295A patent/TWI268547B/zh not_active IP Right Cessation
-
2008
- 2008-04-08 US US12/099,420 patent/US7544959B2/en not_active Expired - Lifetime
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