WO2004013371A3 - Method and apparatus for plasma implantation without deposition of a layer of byproduct - Google Patents
Method and apparatus for plasma implantation without deposition of a layer of byproduct Download PDFInfo
- Publication number
- WO2004013371A3 WO2004013371A3 PCT/US2003/024158 US0324158W WO2004013371A3 WO 2004013371 A3 WO2004013371 A3 WO 2004013371A3 US 0324158 W US0324158 W US 0324158W WO 2004013371 A3 WO2004013371 A3 WO 2004013371A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- workpiece
- gas ions
- surface layer
- dilution gas
- dopant gas
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/083—Compounds containing nitrogen and non-metals and optionally metals containing one or more halogen atoms
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03759186A EP1525333A2 (en) | 2002-08-02 | 2003-08-01 | Method and apparatus for plasma implantation without deposition of a layer of byproduct |
JP2004526318A JP2005535131A (en) | 2002-08-02 | 2003-08-01 | Removal of plasma deposited surface layer by sputtering of dilution gas |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40056002P | 2002-08-02 | 2002-08-02 | |
US60/400,560 | 2002-08-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004013371A2 WO2004013371A2 (en) | 2004-02-12 |
WO2004013371A3 true WO2004013371A3 (en) | 2004-10-21 |
Family
ID=31495837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/024158 WO2004013371A2 (en) | 2002-08-02 | 2003-08-01 | Method and apparatus for plasma implantation without deposition of a layer of byproduct |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1525333A2 (en) |
JP (1) | JP2005535131A (en) |
KR (1) | KR20050034731A (en) |
TW (1) | TW200402769A (en) |
WO (1) | WO2004013371A2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050287307A1 (en) * | 2004-06-23 | 2005-12-29 | Varian Semiconductor Equipment Associates, Inc. | Etch and deposition control for plasma implantation |
US20060040499A1 (en) * | 2004-08-20 | 2006-02-23 | Steve Walther | In situ surface contaminant removal for ion implanting |
EP1936656A1 (en) * | 2006-12-21 | 2008-06-25 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Plasma generator and method for cleaning an object |
US8679960B2 (en) * | 2009-10-14 | 2014-03-25 | Varian Semiconductor Equipment Associates, Inc. | Technique for processing a substrate having a non-planar surface |
US20120235058A1 (en) * | 2010-09-15 | 2012-09-20 | Ashwini Sinha | Method for extending lifetime of an ion source |
US9812291B2 (en) | 2012-02-14 | 2017-11-07 | Entegris, Inc. | Alternate materials and mixtures to minimize phosphorus buildup in implant applications |
KR101596466B1 (en) | 2015-07-21 | 2016-02-22 | 농업회사법인 주식회사 아그로비즈 | Method of producing a water-soluble granular fertilizer composition |
US10460941B2 (en) * | 2016-11-08 | 2019-10-29 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping using a solid dopant source |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4496843A (en) * | 1981-06-01 | 1985-01-29 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for producing metal ions |
US5571576A (en) * | 1995-02-10 | 1996-11-05 | Watkins-Johnson | Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition |
JPH0992804A (en) * | 1995-09-25 | 1997-04-04 | Nec Corp | Manufacture of soi substrate and its manufacturing equipment |
GB2336603A (en) * | 1998-04-23 | 1999-10-27 | Metaltech Limited | A method and apparatus for plasma boronising |
JPH11354068A (en) * | 1997-11-28 | 1999-12-24 | Seiko Epson Corp | Ion implanting apparatus, ion implanting method, and manufacture of semiconductor device |
EP1073087A2 (en) * | 1999-07-22 | 2001-01-31 | Nissin Electric Co., Ltd. | Ion source |
EP1156511A1 (en) * | 2000-05-19 | 2001-11-21 | Applied Materials, Inc. | Remote plasma CVD apparatus |
US20010042827A1 (en) * | 1998-08-03 | 2001-11-22 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
-
2003
- 2003-08-01 WO PCT/US2003/024158 patent/WO2004013371A2/en active Application Filing
- 2003-08-01 EP EP03759186A patent/EP1525333A2/en not_active Withdrawn
- 2003-08-01 TW TW092121107A patent/TW200402769A/en unknown
- 2003-08-01 JP JP2004526318A patent/JP2005535131A/en not_active Withdrawn
- 2003-08-01 KR KR1020057001895A patent/KR20050034731A/en not_active Application Discontinuation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4496843A (en) * | 1981-06-01 | 1985-01-29 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for producing metal ions |
US5571576A (en) * | 1995-02-10 | 1996-11-05 | Watkins-Johnson | Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition |
JPH0992804A (en) * | 1995-09-25 | 1997-04-04 | Nec Corp | Manufacture of soi substrate and its manufacturing equipment |
JPH11354068A (en) * | 1997-11-28 | 1999-12-24 | Seiko Epson Corp | Ion implanting apparatus, ion implanting method, and manufacture of semiconductor device |
GB2336603A (en) * | 1998-04-23 | 1999-10-27 | Metaltech Limited | A method and apparatus for plasma boronising |
US20010042827A1 (en) * | 1998-08-03 | 2001-11-22 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
EP1073087A2 (en) * | 1999-07-22 | 2001-01-31 | Nissin Electric Co., Ltd. | Ion source |
EP1156511A1 (en) * | 2000-05-19 | 2001-11-21 | Applied Materials, Inc. | Remote plasma CVD apparatus |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 08 29 August 1997 (1997-08-29) * |
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 03 30 March 2000 (2000-03-30) * |
Also Published As
Publication number | Publication date |
---|---|
WO2004013371A2 (en) | 2004-02-12 |
TW200402769A (en) | 2004-02-16 |
JP2005535131A (en) | 2005-11-17 |
KR20050034731A (en) | 2005-04-14 |
EP1525333A2 (en) | 2005-04-27 |
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