JP2008500737A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008500737A5 JP2008500737A5 JP2007515536A JP2007515536A JP2008500737A5 JP 2008500737 A5 JP2008500737 A5 JP 2008500737A5 JP 2007515536 A JP2007515536 A JP 2007515536A JP 2007515536 A JP2007515536 A JP 2007515536A JP 2008500737 A5 JP2008500737 A5 JP 2008500737A5
- Authority
- JP
- Japan
- Prior art keywords
- devices
- group
- type
- retest
- retesting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012360 testing method Methods 0.000 claims 31
- 238000013102 re-test Methods 0.000 claims 25
- 230000007547 defect Effects 0.000 claims 21
- 238000000034 method Methods 0.000 claims 16
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000004891 communication Methods 0.000 claims 1
- 238000012854 evaluation process Methods 0.000 claims 1
- 238000013101 initial test Methods 0.000 claims 1
- 239000000523 sample Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/709,729 | 2004-05-25 | ||
| US10/709,729 US7253650B2 (en) | 2004-05-25 | 2004-05-25 | Increase productivity at wafer test using probe retest data analysis |
| PCT/US2005/019267 WO2005116671A2 (en) | 2004-05-25 | 2005-05-25 | Increase productivity at wafer test using probe retest data analysis |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008500737A JP2008500737A (ja) | 2008-01-10 |
| JP2008500737A5 true JP2008500737A5 (https=) | 2008-06-26 |
| JP4866843B2 JP4866843B2 (ja) | 2012-02-01 |
Family
ID=35426510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007515536A Expired - Fee Related JP4866843B2 (ja) | 2004-05-25 | 2005-05-25 | 集積回路デバイスを試験する方法、システム及びプログラム |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US7253650B2 (https=) |
| EP (1) | EP1769257B1 (https=) |
| JP (1) | JP4866843B2 (https=) |
| KR (1) | KR100998388B1 (https=) |
| CN (1) | CN100587507C (https=) |
| WO (1) | WO2005116671A2 (https=) |
Families Citing this family (88)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7253650B2 (en) * | 2004-05-25 | 2007-08-07 | International Business Machines Corporation | Increase productivity at wafer test using probe retest data analysis |
| JP4064955B2 (ja) * | 2004-09-30 | 2008-03-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US7190050B2 (en) * | 2005-07-01 | 2007-03-13 | Synopsys, Inc. | Integrated circuit on corrugated substrate |
| US7492179B2 (en) * | 2006-04-10 | 2009-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for reducing testing times on integrated circuit dies |
| US7699996B2 (en) * | 2007-02-28 | 2010-04-20 | International Business Machines Corporation | Sidewall image transfer processes for forming multiple line-widths |
| JP2009206306A (ja) * | 2008-02-28 | 2009-09-10 | Seiko Epson Corp | 半導体装置の製造方法及び電気光学装置の製造方法 |
| JP4518180B2 (ja) * | 2008-04-16 | 2010-08-04 | ソニー株式会社 | 半導体装置、および、その製造方法 |
| US8716786B2 (en) * | 2008-06-17 | 2014-05-06 | Infineon Technologies Ag | Semiconductor device having different fin widths |
| US20100070211A1 (en) * | 2008-09-12 | 2010-03-18 | Analog Devices, Inc. | Rolling average test |
| KR101019048B1 (ko) | 2008-11-20 | 2011-03-07 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
| US8324036B2 (en) * | 2009-11-09 | 2012-12-04 | International Business Machines Corporation | Device having and method for forming fins with multiple widths for an integrated circuit |
| US8617937B2 (en) | 2010-09-21 | 2013-12-31 | International Business Machines Corporation | Forming narrow fins for finFET devices using asymmetrically spaced mandrels |
| US9472550B2 (en) | 2010-11-23 | 2016-10-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adjusted fin width in integrated circuitry |
| US8633076B2 (en) * | 2010-11-23 | 2014-01-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for adjusting fin width in integrated circuitry |
| US8513131B2 (en) | 2011-03-17 | 2013-08-20 | International Business Machines Corporation | Fin field effect transistor with variable channel thickness for threshold voltage tuning |
| US20130022240A1 (en) * | 2011-07-19 | 2013-01-24 | Wolters William C | Remote Automated Planning and Tracking of Recorded Data |
| US8673165B2 (en) | 2011-10-06 | 2014-03-18 | International Business Machines Corporation | Sidewall image transfer process with multiple critical dimensions |
| US8557675B2 (en) | 2011-11-28 | 2013-10-15 | Globalfoundries Inc. | Methods of patterning features in a structure using multiple sidewall image transfer technique |
| US8669186B2 (en) | 2012-01-26 | 2014-03-11 | Globalfoundries Inc. | Methods of forming SRAM devices using sidewall image transfer techniques |
| US8816436B2 (en) | 2012-05-16 | 2014-08-26 | International Business Machines Corporation | Method and structure for forming fin resistors |
| US8735296B2 (en) | 2012-07-18 | 2014-05-27 | International Business Machines Corporation | Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer |
| US9053390B2 (en) * | 2012-08-14 | 2015-06-09 | Kla-Tencor Corporation | Automated inspection scenario generation |
| US8741701B2 (en) * | 2012-08-14 | 2014-06-03 | International Business Machines Corporation | Fin structure formation including partial spacer removal |
| US9311201B2 (en) | 2012-08-22 | 2016-04-12 | International Business Machines Corporation | Real-time rule engine for adaptive testing of integrated circuits |
| US8669167B1 (en) * | 2012-08-28 | 2014-03-11 | International Business Machines Corporation | Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices |
| US9190346B2 (en) | 2012-08-31 | 2015-11-17 | Synopsys, Inc. | Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits |
| US9817928B2 (en) | 2012-08-31 | 2017-11-14 | Synopsys, Inc. | Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits |
| KR101953240B1 (ko) | 2012-09-14 | 2019-03-04 | 삼성전자 주식회사 | 핀 트랜지스터 및 이를 포함하는 반도체 집적 회로 |
| US9177820B2 (en) * | 2012-10-24 | 2015-11-03 | Globalfoundries U.S. 2 Llc | Sub-lithographic semiconductor structures with non-constant pitch |
| US8962421B2 (en) * | 2012-11-15 | 2015-02-24 | GlobalFoundries, Inc. | Methods for fabricating integrated circuits including semiconductive resistor structures in a FinFET architecture |
| US8822320B2 (en) | 2012-11-20 | 2014-09-02 | International Business Machines Corporation | Dense finFET SRAM |
| US8889561B2 (en) * | 2012-12-10 | 2014-11-18 | Globalfoundries Inc. | Double sidewall image transfer process |
| US20140167162A1 (en) | 2012-12-13 | 2014-06-19 | International Business Machines Corporation | Finfet with merge-free fins |
| US9379018B2 (en) | 2012-12-17 | 2016-06-28 | Synopsys, Inc. | Increasing Ion/Ioff ratio in FinFETs and nano-wires |
| US8847324B2 (en) | 2012-12-17 | 2014-09-30 | Synopsys, Inc. | Increasing ION /IOFF ratio in FinFETs and nano-wires |
| US20140230052A1 (en) * | 2013-02-11 | 2014-08-14 | Motorola Mobility Llc | System and method for testing a secured manufactured device |
| US9023695B2 (en) | 2013-03-14 | 2015-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of patterning features of a semiconductor device |
| US9494650B2 (en) | 2013-03-15 | 2016-11-15 | International Business Machines Corporation | Efficient method of retesting integrated circuits |
| US9711368B2 (en) * | 2013-04-15 | 2017-07-18 | United Microelectronics Corp. | Sidewall image transfer process |
| US8999791B2 (en) * | 2013-05-03 | 2015-04-07 | International Business Machines Corporation | Formation of semiconductor structures with variable gate lengths |
| US9040371B2 (en) | 2013-08-07 | 2015-05-26 | International Business Machines Corporation | Integration of dense and variable pitch fin structures |
| TWI472778B (zh) * | 2013-08-30 | 2015-02-11 | Chroma Ate Inc | System - level IC test machine automatic retest method and the test machine |
| TWI498573B (zh) * | 2013-11-05 | 2015-09-01 | King Yuan Electronics Co Ltd | 半導體晶片重測系統及其重測方法 |
| US8975129B1 (en) * | 2013-11-13 | 2015-03-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a FinFET device |
| US9502408B2 (en) | 2013-11-14 | 2016-11-22 | Globalfoundries Inc. | FinFET device including fins having a smaller thickness in a channel region, and a method of manufacturing same |
| KR20150058597A (ko) | 2013-11-18 | 2015-05-29 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| TWI500945B (zh) * | 2013-12-17 | 2015-09-21 | Primax Electronics Ltd | 電路板之測試系統 |
| US9633906B2 (en) | 2014-01-24 | 2017-04-25 | International Business Machines Corporation | Gate structure cut after formation of epitaxial active regions |
| US9196612B2 (en) | 2014-03-26 | 2015-11-24 | International Business Machines Corporation | Semiconductor device including merged-unmerged work function metal and variable fin pitch |
| US9305845B2 (en) | 2014-09-04 | 2016-04-05 | International Business Machines Corporation | Self-aligned quadruple patterning process |
| US9209279B1 (en) * | 2014-09-12 | 2015-12-08 | Applied Materials, Inc. | Self aligned replacement fin formation |
| US9269627B1 (en) | 2014-09-30 | 2016-02-23 | International Business Machines Corporation | Fin cut on SIT level |
| US9536739B2 (en) | 2014-10-28 | 2017-01-03 | International Business Machines Corporation | Self-cut sidewall image transfer process |
| US9525041B2 (en) | 2015-02-12 | 2016-12-20 | United Microelectronics Corp. | Semiconductor process for forming gates with different pitches and different dimensions |
| US9601345B2 (en) | 2015-03-27 | 2017-03-21 | International Business Machines Corporation | Fin trimming in a double sit process |
| KR102170701B1 (ko) * | 2015-04-15 | 2020-10-27 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| US10411135B2 (en) | 2015-06-08 | 2019-09-10 | Synopsys, Inc. | Substrates and transistors with 2D material channels on 3D geometries |
| US9484264B1 (en) * | 2015-07-29 | 2016-11-01 | International Business Machines Corporation | Field effect transistor contacts |
| US9786563B2 (en) | 2015-11-23 | 2017-10-10 | International Business Machines Corporation | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer |
| KR102546233B1 (ko) * | 2016-01-25 | 2023-06-22 | 에스케이하이닉스 주식회사 | 웨이퍼 테스트 장치 및 그 테스트 방법 |
| US9852917B2 (en) * | 2016-03-22 | 2017-12-26 | International Business Machines Corporation | Methods of fabricating semiconductor fins by double sidewall image transfer patterning through localized oxidation enhancement of sacrificial mandrel sidewalls |
| US9691775B1 (en) * | 2016-04-28 | 2017-06-27 | Globalfoundries Inc. | Combined SADP fins for semiconductor devices and methods of making the same |
| US9793271B1 (en) | 2016-04-29 | 2017-10-17 | International Business Machines Corporation | Semiconductor device with different fin pitches |
| US10026615B2 (en) | 2016-05-12 | 2018-07-17 | International Business Machines Corporation | Fin patterns with varying spacing without Fin cut |
| US9859174B1 (en) * | 2016-06-24 | 2018-01-02 | International Business Machines Corporation | Sidewall image transfer structures |
| US9978608B2 (en) * | 2016-09-21 | 2018-05-22 | Globalfoundries Inc. | Fin patterning for a fin-type field-effect transistor |
| US9870942B1 (en) * | 2017-01-19 | 2018-01-16 | Globalfoundries Inc. | Method of forming mandrel and non-mandrel metal lines having variable widths |
| DE102018100940B4 (de) | 2017-08-28 | 2021-05-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrierte Schaltung mit Finne und Gatestruktur und Herstellungsverfahren |
| US10529833B2 (en) * | 2017-08-28 | 2020-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit with a fin and gate structure and method making the same |
| US10573528B2 (en) * | 2017-12-14 | 2020-02-25 | Tessera, Inc. | Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic |
| CN108362704A (zh) * | 2018-01-30 | 2018-08-03 | 上海霖研精密自动化机械有限公司 | 一种双面影像检测设备 |
| TWI639846B (zh) * | 2018-02-12 | 2018-11-01 | 黃彥凱 | 晶圓再驗之方法 |
| US10475791B1 (en) | 2018-05-31 | 2019-11-12 | Globalfoundries Inc. | Transistor fins with different thickness gate dielectric |
| US10497576B1 (en) | 2018-08-20 | 2019-12-03 | Globalfoundries Inc. | Devices with slotted active regions |
| CN109444703A (zh) * | 2018-10-15 | 2019-03-08 | 上海华虹宏力半导体制造有限公司 | 超级结器件的测试方法 |
| KR102728515B1 (ko) | 2018-11-09 | 2024-11-13 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US10910081B2 (en) * | 2018-12-17 | 2021-02-02 | Micron Technology, Inc. | Management of test resources to perform reliability testing of memory components |
| US11101015B2 (en) | 2018-12-17 | 2021-08-24 | Micron Technology, Inc. | Multi-dimensional usage space testing of memory components |
| CN109765479B (zh) * | 2019-01-28 | 2021-10-01 | 合肥京东方视讯科技有限公司 | 一种电路板缺件检测装置和方法 |
| CN110031746B (zh) * | 2019-04-19 | 2020-09-18 | 中国南方电网有限责任公司 | 芯片测试远程监控方法、装置、计算机设备和存储介质 |
| US11037937B2 (en) | 2019-11-20 | 2021-06-15 | Globalfoundries U.S. Inc. | SRAM bit cells formed with dummy structures |
| JP7561505B2 (ja) * | 2020-03-10 | 2024-10-04 | 株式会社アドバンテスト | 判定装置、試験システム、判定方法および判定プログラム |
| CN112024450A (zh) * | 2020-08-28 | 2020-12-04 | 苏州富强科技有限公司 | 用于键盘检测的协同检测方法及系统、检测机构 |
| US11901240B2 (en) * | 2021-01-18 | 2024-02-13 | Samsung Electronics Co., Ltd. | Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip |
| US11798827B2 (en) * | 2021-05-06 | 2023-10-24 | Kla Corporation | Systems and methods for semiconductor adaptive testing using inline defect part average testing |
| CN114527366B (zh) * | 2021-12-31 | 2025-08-01 | 杭州广立测试设备有限公司 | 一种wat自动重测方法 |
| CN115983191A (zh) * | 2022-11-28 | 2023-04-18 | 海光集成电路设计(北京)有限公司 | 测试点验证方法及相关装置 |
| CN119916189B (zh) * | 2025-04-02 | 2025-07-04 | 杭州广立测试设备有限公司 | 晶圆的测试方法、装置和存储介质 |
Family Cites Families (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0669031B2 (ja) * | 1984-07-17 | 1994-08-31 | 日本電気株式会社 | 半導体装置 |
| JPS6457729A (en) | 1987-08-28 | 1989-03-06 | Seiko Epson Corp | Semiconductor device |
| JPH0574878A (ja) | 1991-09-13 | 1993-03-26 | Nec Yamagata Ltd | ウエーハの試験方法 |
| JPH08220172A (ja) * | 1995-02-14 | 1996-08-30 | Sharp Corp | 検査装置 |
| US5726920A (en) * | 1995-09-29 | 1998-03-10 | Advanced Micro Devices, Inc. | Watchdog system having data differentiating means for use in monitoring of semiconductor wafer testing line |
| US5764650A (en) * | 1996-08-02 | 1998-06-09 | Micron Technology, Inc. | Intelligent binning for electrically repairable semiconductor chips |
| US5867505A (en) | 1996-08-07 | 1999-02-02 | Micron Technology, Inc. | Method and apparatus for testing an integrated circuit including the step/means for storing an associated test identifier in association with integrated circuit identifier for each test to be performed on the integrated circuit |
| US6078189A (en) * | 1996-12-13 | 2000-06-20 | International Business Machines Corporation | Dynamic test reordering |
| US6043101A (en) * | 1997-01-15 | 2000-03-28 | Texas Instruments Incorporated | In-situ multiprobe retest method with recovery recognition |
| US6100486A (en) * | 1998-08-13 | 2000-08-08 | Micron Technology, Inc. | Method for sorting integrated circuit devices |
| US5844803A (en) * | 1997-02-17 | 1998-12-01 | Micron Technology, Inc. | Method of sorting a group of integrated circuit devices for those devices requiring special testing |
| JP4018254B2 (ja) * | 1998-08-20 | 2007-12-05 | 株式会社アドバンテスト | 電子部品の試験方法 |
| US6265232B1 (en) * | 1998-08-21 | 2001-07-24 | Micron Technology, Inc. | Yield based, in-line defect sampling method |
| US6240329B1 (en) * | 1998-11-09 | 2001-05-29 | Chin-Yang Sun | Method and apparatus for a semiconductor wafer inspection system using a knowledge-based system |
| JP4017285B2 (ja) * | 1999-06-02 | 2007-12-05 | 松下電器産業株式会社 | パターン欠陥検出方法 |
| CZ299516B6 (cs) | 1999-07-02 | 2008-08-20 | F. Hoffmann-La Roche Ag | Konjugát erythropoetinového glykoproteinu, zpusobjeho výroby a použití a farmaceutická kompozice sjeho obsahem |
| US6670719B2 (en) * | 1999-08-25 | 2003-12-30 | Micron Technology, Inc. | Microelectronic device package filled with liquid or pressurized gas and associated method of manufacture |
| JP2001083211A (ja) * | 1999-09-14 | 2001-03-30 | Matsushita Electronics Industry Corp | 半導体検査装置および半導体検査方法 |
| US6274395B1 (en) * | 1999-12-23 | 2001-08-14 | Lsi Logic Corporation | Method and apparatus for maintaining test data during fabrication of a semiconductor wafer |
| US6507800B1 (en) * | 2000-03-13 | 2003-01-14 | Promos Technologies, Inc. | Method for testing semiconductor wafers |
| US6499118B1 (en) * | 2000-05-17 | 2002-12-24 | Teradyne, Inc. | Redundancy analysis method and apparatus for ATE |
| US6277704B1 (en) * | 2000-05-24 | 2001-08-21 | Micron Technology, Inc. | Microelectronic device fabricating method, method of forming a pair of conductive device components of different base widths from a common deposited conductive layer |
| US20040006447A1 (en) * | 2000-06-22 | 2004-01-08 | Jacky Gorin | Methods and apparatus for test process enhancement |
| US6618682B2 (en) * | 2001-04-20 | 2003-09-09 | International Business Machines Corporation | Method for test optimization using historical and actual fabrication test data |
| EP1273923A1 (en) * | 2001-07-03 | 2003-01-08 | Koninklijke Philips Electronics N.V. | Testing a batch of electrical components |
| US6789032B2 (en) * | 2001-12-26 | 2004-09-07 | International Business Machines Corporation | Method of statistical binning for reliability selection |
| US7027946B2 (en) * | 2002-01-30 | 2006-04-11 | Texas Instruments Incorporated | Broadside compare with retest on fail |
| US7045466B2 (en) * | 2002-06-27 | 2006-05-16 | Cornell Research Foundation, Inc. | Three dimensional high aspect ratio micromachining |
| JP3960872B2 (ja) * | 2002-07-19 | 2007-08-15 | Necエレクトロニクス株式会社 | プローバ装置及び半導体装置の検査方法 |
| US7214991B2 (en) * | 2002-12-06 | 2007-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS inverters configured using multiple-gate transistors |
| US6987269B2 (en) * | 2002-12-16 | 2006-01-17 | Axcelis Technologies, Inc. | Apparatus and process for measuring light intensities |
| US6956256B2 (en) * | 2003-03-04 | 2005-10-18 | Micron Technology Inc. | Vertical gain cell |
| EP1614155A2 (de) * | 2003-04-17 | 2006-01-11 | X-FAB Semiconductor Foundries AG | Teststruktur zur elektrischen ueberpruefung der tiefen von trench-aetzungen in einem soi wafer und zugehoerige arbeitsverfahren |
| US7017429B2 (en) * | 2003-04-30 | 2006-03-28 | Infineon Technologies Richmond, Lp | Continuous test flow method and apparatus |
| US6872647B1 (en) * | 2003-05-06 | 2005-03-29 | Advanced Micro Devices, Inc. | Method for forming multiple fins in a semiconductor device |
| US6894326B2 (en) * | 2003-06-25 | 2005-05-17 | International Business Machines Corporation | High-density finFET integration scheme |
| US6909151B2 (en) * | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
| US6943405B2 (en) * | 2003-07-01 | 2005-09-13 | International Business Machines Corporation | Integrated circuit having pairs of parallel complementary FinFETs |
| US6812119B1 (en) * | 2003-07-08 | 2004-11-02 | Advanced Micro Devices, Inc. | Narrow fins by oxidation in double-gate finfet |
| US7335934B2 (en) * | 2003-07-22 | 2008-02-26 | Innovative Silicon S.A. | Integrated circuit device, and method of fabricating same |
| US7355253B2 (en) * | 2003-08-22 | 2008-04-08 | International Business Machines Corporation | Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates |
| US7354990B2 (en) * | 2003-08-26 | 2008-04-08 | General Electric Company | Purified polymeric materials and methods of purifying polymeric materials |
| KR100555518B1 (ko) * | 2003-09-16 | 2006-03-03 | 삼성전자주식회사 | 이중 게이트 전계 효과 트랜지스터 및 그 제조방법 |
| US6998332B2 (en) * | 2004-01-08 | 2006-02-14 | International Business Machines Corporation | Method of independent P and N gate length control of FET device made by sidewall image transfer technique |
| US6875703B1 (en) * | 2004-01-20 | 2005-04-05 | International Business Machines Corporation | Method for forming quadruple density sidewall image transfer (SIT) structures |
| US7224029B2 (en) * | 2004-01-28 | 2007-05-29 | International Business Machines Corporation | Method and structure to create multiple device widths in FinFET technology in both bulk and SOI |
| US7180134B2 (en) * | 2004-01-30 | 2007-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and structures for planar and multiple-gate transistors formed on SOI |
| US7115947B2 (en) * | 2004-03-18 | 2006-10-03 | International Business Machines Corporation | Multiple dielectric finfet structure and method |
| US7253650B2 (en) * | 2004-05-25 | 2007-08-07 | International Business Machines Corporation | Increase productivity at wafer test using probe retest data analysis |
| US20050263801A1 (en) * | 2004-05-27 | 2005-12-01 | Jae-Hyun Park | Phase-change memory device having a barrier layer and manufacturing method |
| US7208815B2 (en) * | 2004-05-28 | 2007-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS logic gate fabricated on hybrid crystal orientations and method of forming thereof |
| US7422946B2 (en) * | 2004-09-29 | 2008-09-09 | Intel Corporation | Independently accessed double-gate and tri-gate transistors in same process flow |
| US7298004B2 (en) * | 2004-11-30 | 2007-11-20 | Infineon Technologies Ag | Charge-trapping memory cell and method for production |
| US7390746B2 (en) * | 2005-03-15 | 2008-06-24 | Micron Technology, Inc. | Multiple deposition for integration of spacers in pitch multiplication process |
| US7087966B1 (en) * | 2005-05-18 | 2006-08-08 | International Business Machines Corporation | Double-Gate FETs (field effect transistors) |
| EP1764827A1 (en) * | 2005-09-16 | 2007-03-21 | Interuniversitair Microelektronica Centrum ( Imec) | Recursive spacer defined patterning |
| US7323374B2 (en) * | 2005-09-19 | 2008-01-29 | International Business Machines Corporation | Dense chevron finFET and method of manufacturing same |
| US7071429B1 (en) * | 2005-09-23 | 2006-07-04 | Anderson Richard P | Linear adjustment operator for pressure control of paint pumps |
| US7265059B2 (en) * | 2005-09-30 | 2007-09-04 | Freescale Semiconductor, Inc. | Multiple fin formation |
| US7719058B2 (en) * | 2005-10-12 | 2010-05-18 | Seliskar John J | Mixed-signal semiconductor platform incorporating fully-depleted castellated-gate MOSFET device and method of manufacture thereof |
| US7547947B2 (en) * | 2005-11-15 | 2009-06-16 | International Business Machines Corporation | SRAM cell |
-
2004
- 2004-05-25 US US10/709,729 patent/US7253650B2/en not_active Expired - Fee Related
-
2005
- 2005-05-25 KR KR1020067022487A patent/KR100998388B1/ko not_active Expired - Fee Related
- 2005-05-25 JP JP2007515536A patent/JP4866843B2/ja not_active Expired - Fee Related
- 2005-05-25 CN CN200580015545A patent/CN100587507C/zh not_active Expired - Fee Related
- 2005-05-25 WO PCT/US2005/019267 patent/WO2005116671A2/en not_active Ceased
- 2005-05-25 EP EP05778492.8A patent/EP1769257B1/en not_active Expired - Lifetime
-
2007
- 2007-04-18 US US11/736,600 patent/US7463047B2/en not_active Expired - Fee Related
- 2007-08-15 US US11/838,934 patent/US20070284669A1/en not_active Abandoned
- 2007-08-29 US US11/846,544 patent/US7763531B2/en not_active Expired - Fee Related
-
2008
- 2008-07-09 US US12/169,670 patent/US7573284B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008500737A5 (https=) | ||
| WO2005116671A3 (en) | Increase productivity at wafer test using probe retest data analysis | |
| MX2010007106A (es) | Sistemas y metodos para el analisis de datos de pozos. | |
| WO2007109322A3 (en) | Speeding up defect diagnosis techniques | |
| WO2005111796A3 (en) | Defect location identification for microdevice manufacturing and test | |
| US20220253375A1 (en) | Systems and methods for device testing to avoid resource conflicts for a large number of test scenarios | |
| US8006156B2 (en) | Method of generating test condition for detecting delay faults in semiconductor integrated circuit and apparatus for generating the same | |
| JP2002350515A5 (https=) | ||
| US9400311B1 (en) | Method and system of collective failure diagnosis for multiple electronic circuits | |
| CN103218277A (zh) | 服务器环境的自动检测方法与装置 | |
| US7382141B2 (en) | Testing a batch of electrical components | |
| CN107562621A (zh) | 确定手工测试用例与被测试代码关联关系的方法和装置 | |
| US20140281719A1 (en) | Explaining excluding a test from a test suite | |
| CN104716069A (zh) | 晶圆可接受性测试机台内部环境的监测方法和监测装置 | |
| TW200739105A (en) | Method and machine-readable media for inferring relationships between test results | |
| CN115617640B (zh) | 一种软件测试方法、装置、电子设备及存储介质 | |
| CN101210932B (zh) | 一种可提高缺陷检验可靠性的方法 | |
| ATE417308T1 (de) | Fehlerdiagnose | |
| JP7257928B2 (ja) | 試験装置 | |
| CN101071158A (zh) | 一种在线测试仪的继电器测试方法 | |
| US9103877B2 (en) | Apparatus and method for IDDQ tests | |
| US7461315B2 (en) | Method and system for improving quality of a circuit through non-functional test pattern identification | |
| CN114527366A (zh) | 一种wat自动重测方法 | |
| Takamatsu et al. | On the fault diagnosis in the presence of unknown fault models using pass/fail information | |
| Liu et al. | Hyperactive faults dictionary to increase diagnosis throughput |