JP2008283203A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008283203A5 JP2008283203A5 JP2008153645A JP2008153645A JP2008283203A5 JP 2008283203 A5 JP2008283203 A5 JP 2008283203A5 JP 2008153645 A JP2008153645 A JP 2008153645A JP 2008153645 A JP2008153645 A JP 2008153645A JP 2008283203 A5 JP2008283203 A5 JP 2008283203A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- carboxylic acid
- group
- copper
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005498 polishing Methods 0.000 claims 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 11
- 229910052802 copper Inorganic materials 0.000 claims 11
- 239000010949 copper Substances 0.000 claims 11
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 claims 9
- 150000001735 carboxylic acids Chemical class 0.000 claims 9
- RSWGJHLUYNHPMX-UHFFFAOYSA-N 1,4a-dimethyl-7-propan-2-yl-2,3,4,4b,5,6,10,10a-octahydrophenanthrene-1-carboxylic acid Chemical compound C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims 8
- 125000002723 alicyclic group Chemical group 0.000 claims 5
- 230000004888 barrier function Effects 0.000 claims 5
- 239000007800 oxidant agent Substances 0.000 claims 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 3
- MHVJRKBZMUDEEV-APQLOABGSA-N (+)-Pimaric acid Chemical compound [C@H]1([C@](CCC2)(C)C(O)=O)[C@@]2(C)[C@H]2CC[C@](C=C)(C)C=C2CC1 MHVJRKBZMUDEEV-APQLOABGSA-N 0.000 claims 2
- MHVJRKBZMUDEEV-UHFFFAOYSA-N (-)-ent-pimara-8(14),15-dien-19-oic acid Natural products C1CCC(C(O)=O)(C)C2C1(C)C1CCC(C=C)(C)C=C1CC2 MHVJRKBZMUDEEV-UHFFFAOYSA-N 0.000 claims 2
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 claims 2
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000006061 abrasive grain Substances 0.000 claims 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 125000003277 amino group Chemical group 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims 1
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- 150000003112 potassium compounds Chemical class 0.000 claims 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims 1
- 239000011164 primary particle Substances 0.000 claims 1
- 230000007261 regionalization Effects 0.000 claims 1
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008153645A JP2008283203A (ja) | 2005-12-21 | 2008-06-12 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005368082 | 2005-12-21 | ||
| JP2006125474 | 2006-04-28 | ||
| JP2006277585 | 2006-10-11 | ||
| JP2008153645A JP2008283203A (ja) | 2005-12-21 | 2008-06-12 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007551155A Division JP4277930B2 (ja) | 2005-12-21 | 2006-12-21 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009092155A Division JP2009152646A (ja) | 2005-12-21 | 2009-04-06 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008283203A JP2008283203A (ja) | 2008-11-20 |
| JP2008283203A5 true JP2008283203A5 (enExample) | 2009-06-18 |
Family
ID=38188693
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007551155A Expired - Fee Related JP4277930B2 (ja) | 2005-12-21 | 2006-12-21 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
| JP2008153645A Withdrawn JP2008283203A (ja) | 2005-12-21 | 2008-06-12 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
| JP2009092155A Withdrawn JP2009152646A (ja) | 2005-12-21 | 2009-04-06 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007551155A Expired - Fee Related JP4277930B2 (ja) | 2005-12-21 | 2006-12-21 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009092155A Withdrawn JP2009152646A (ja) | 2005-12-21 | 2009-04-06 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1965417B1 (enExample) |
| JP (3) | JP4277930B2 (enExample) |
| KR (1) | KR20080078840A (enExample) |
| CN (1) | CN101346804B (enExample) |
| TW (1) | TW200738852A (enExample) |
| WO (1) | WO2007072918A1 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008155987A1 (ja) * | 2007-06-20 | 2008-12-24 | Asahi Glass Co., Ltd. | 研磨用組成物、半導体集積回路表面の研磨方法および半導体集積回路用銅配線の作製方法 |
| WO2008156054A1 (ja) * | 2007-06-20 | 2008-12-24 | Asahi Glass Co., Ltd. | 研磨用組成物および半導体集積回路装置の製造方法 |
| JP5226278B2 (ja) * | 2007-11-08 | 2013-07-03 | 株式会社クラレ | 研磨用スラリー |
| JP5413568B2 (ja) * | 2008-02-06 | 2014-02-12 | Jsr株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5413567B2 (ja) * | 2008-02-06 | 2014-02-12 | Jsr株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5413566B2 (ja) * | 2008-02-06 | 2014-02-12 | Jsr株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| US8506359B2 (en) | 2008-02-06 | 2013-08-13 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method |
| JP5333739B2 (ja) * | 2008-02-18 | 2013-11-06 | Jsr株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2009224771A (ja) * | 2008-02-18 | 2009-10-01 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5333743B2 (ja) * | 2008-02-18 | 2013-11-06 | Jsr株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5333740B2 (ja) * | 2008-02-18 | 2013-11-06 | Jsr株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP5333742B2 (ja) * | 2008-02-18 | 2013-11-06 | Jsr株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010028079A (ja) * | 2008-02-18 | 2010-02-04 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010028078A (ja) * | 2008-02-18 | 2010-02-04 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010041027A (ja) * | 2008-02-18 | 2010-02-18 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010034497A (ja) * | 2008-02-18 | 2010-02-12 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| WO2009104465A1 (ja) * | 2008-02-18 | 2009-08-27 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| JP5333744B2 (ja) * | 2008-02-18 | 2013-11-06 | Jsr株式会社 | 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法 |
| JP5333741B2 (ja) * | 2008-02-18 | 2013-11-06 | Jsr株式会社 | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010028077A (ja) * | 2008-02-18 | 2010-02-04 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2009224767A (ja) * | 2008-02-18 | 2009-10-01 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| JP2010016344A (ja) * | 2008-02-18 | 2010-01-21 | Jsr Corp | 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法 |
| US20110081780A1 (en) * | 2008-02-18 | 2011-04-07 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method |
| KR101610976B1 (ko) * | 2008-05-01 | 2016-04-08 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 이 화학 기계 연마용 수계 분산체를 제조하기 위한 키트, 및 화학 기계 연마 방법 |
| WO2010024404A1 (ja) * | 2008-08-28 | 2010-03-04 | 旭硝子株式会社 | 研磨用組成物および半導体集積回路装置の製造方法 |
| TWI457423B (zh) * | 2008-11-10 | 2014-10-21 | Asahi Glass Co Ltd | A polishing composition, and a method for manufacturing a semiconductor integrated circuit device |
| JP6051679B2 (ja) * | 2012-08-22 | 2016-12-27 | 住友電気工業株式会社 | 研磨用組成物および化合物半導体基板の製造方法 |
| WO2015140850A1 (ja) * | 2014-03-20 | 2015-09-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
| US10613442B2 (en) * | 2015-03-12 | 2020-04-07 | Merck Patent Gmbh | Compositions and methods that promote charge complexing copper protection during low pKa driven polymer stripping |
| JPWO2018174092A1 (ja) * | 2017-03-22 | 2020-01-30 | 三菱ケミカル株式会社 | 半導体デバイス用基板の洗浄液、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板 |
| JP7002853B2 (ja) * | 2017-04-03 | 2022-01-20 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法、並びに、研磨加工品の製造方法 |
| CN107841288A (zh) * | 2017-12-12 | 2018-03-27 | 戚明海 | Cmp研磨剂及其制造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4171858B2 (ja) * | 1999-06-23 | 2008-10-29 | Jsr株式会社 | 研磨用組成物および研磨方法 |
| JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| TWI291987B (en) * | 2003-07-04 | 2008-01-01 | Jsr Corp | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
| US7485162B2 (en) * | 2003-09-30 | 2009-02-03 | Fujimi Incorporated | Polishing composition |
| DE602004026454D1 (de) * | 2003-09-30 | 2010-05-20 | Fujimi Inc | Polierzusammensetzung und polierverfahren |
| US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
-
2006
- 2006-12-21 CN CN2006800487285A patent/CN101346804B/zh not_active Expired - Fee Related
- 2006-12-21 KR KR1020087014807A patent/KR20080078840A/ko not_active Withdrawn
- 2006-12-21 TW TW095148244A patent/TW200738852A/zh unknown
- 2006-12-21 EP EP06835087A patent/EP1965417B1/en active Active
- 2006-12-21 WO PCT/JP2006/325521 patent/WO2007072918A1/ja not_active Ceased
- 2006-12-21 JP JP2007551155A patent/JP4277930B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-12 JP JP2008153645A patent/JP2008283203A/ja not_active Withdrawn
-
2009
- 2009-04-06 JP JP2009092155A patent/JP2009152646A/ja not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008283203A5 (enExample) | ||
| TW500784B (en) | Polishing system and method of its use | |
| TWI338711B (en) | Passivative chemical mechanical polishing composition for copper film planarization | |
| TWI535836B (zh) | 用於鎢拋光之組合物 | |
| CN105144354B (zh) | 用于去除钴的研磨组合物 | |
| TW201326378A (zh) | 金屬化學機械拋光漿料及其應用 | |
| TWI413678B (zh) | 研磨液 | |
| WO2008132983A1 (ja) | 研磨剤組成物および半導体集積回路装置の製造方法 | |
| TW200535203A (en) | Barrier polishing solution | |
| TW200738852A (en) | Polishing composition, polishing method, and method for forming copper wiring for semiconductor integrated circuit | |
| JP2009540575A5 (enExample) | ||
| TWI347969B (en) | Polishing composition | |
| KR20070079055A (ko) | 배리어층용 연마액 | |
| JP2010153853A5 (enExample) | ||
| WO2008156054A1 (ja) | 研磨用組成物および半導体集積回路装置の製造方法 | |
| JP2007116105A5 (enExample) | ||
| WO2011072494A1 (zh) | 一种化学机械抛光液 | |
| JP2014522098A5 (enExample) | ||
| TWI635168B (zh) | Chemical mechanical polishing slurry | |
| CN106928859A (zh) | 一种化学机械抛光液及其应用 | |
| TW200813205A (en) | Aqueous dispersion for chemical mechanical polishing, method for producing the same, and chemical mechanical polishing method | |
| CN103194148A (zh) | 化学机械抛光水性组合物及其用途 | |
| JP2010529672A (ja) | 銅ダマシン工程用化学機械的研磨スラリー組成物 | |
| Li et al. | Exploring the effectiveness of polyhydroxy complexing agents in sapphire chemical mechanical polishing: Combining experiments and theoretical calculation | |
| WO2013189168A1 (zh) | 一种用于硅通孔平坦化的化学机械抛光液 |