JP2008235534A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2008235534A JP2008235534A JP2007072343A JP2007072343A JP2008235534A JP 2008235534 A JP2008235534 A JP 2008235534A JP 2007072343 A JP2007072343 A JP 2007072343A JP 2007072343 A JP2007072343 A JP 2007072343A JP 2008235534 A JP2008235534 A JP 2008235534A
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- silicon film
- film
- etching
- silicon
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
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- 239000011259 mixed solution Substances 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】半導体基板1上に絶縁膜5を介して第1シリコン膜6を形成し、第1シリコン膜6に高濃度で一導電型不純物を導入し、第1シリコン膜6上に第2シリコン膜9を形成し、第2シリコン膜9上に所定パターンのマスク10mを形成した後、マスク10mから露出する領域で、第1シリコン膜6が露出しない深さまで第1条件により第2シリコン膜9をエッチングし、ついで第1条件に比べて半導体基板1の垂直方向へのエッチング成分の高い第2条件によって第2シリコン膜9の残りと第1シリコン膜6を絶縁膜5が露出しない深さまでエッチングし、さらに第2条件に比べて絶縁膜に対する第1シリコン膜6のエッチング選択比が大きな第3条件により第1シリコン膜6の残りをエッチングする工程とを有している。
【選択図】図4
Description
(付記1)半導体基板の上に第1絶縁膜を形成する工程と、前記第1絶縁膜上に第1のシリコン膜を形成する工程と、前記第1のシリコン膜上に第2のシリコン膜を形成する工程と、前記第2のシリコン膜上に所定パターンのマスク層を形成する工程と、前記マスク層をエッチングマスクとして、前記第2のシリコン膜を前記第1のシリコン膜が露出しない深さまで第1条件によりエッチングする第1エッチング工程と、第1条件に比べて垂直エッチング成分比の高い第2条件によって、前記第2のシリコン膜の残りと前記第1のシリコン膜を前記第1絶縁膜が露出しない深さまでエッチングする第2エッチング工程と、前記第2条件に比べて、前記第1絶縁膜のエッチングレートに対する前記第1のシリコン膜のエッチングレートの比が大きな第3条件により前記第1のシリコン膜の残りをエッチングする第3エッチング工程とを有し、前記第1のシリコン膜の第一導電型不純物濃度は、前記第2のシリコン膜の第一導電型不純物濃度よりも高いことを有することを特徴とする半導体装置の製造方法。
(付記2)前記第1条件によって、前記第2のシリコン膜は膜厚の70%以上の深さまでエッチングされることを特徴とする付記1に記載の半導体装置の製造方法。
(付記3)前記第1エッチング工程の前に、前記第2のシリコン膜の表面の酸化膜を除去する工程を有することを特徴とする付記1又は付記2に記載の半導体装置の製造方法。
(付記4)前記第1のエッチング工程に使用される第1反応ガスは、HBr及びO2を含むことを特徴とする付記1乃至付記3のいずかに記載の半導体装置の製造方法。
(付記5)前記第1反応ガスにはさらにCl2が含まれることを特徴とする付記4に記載の半導体装置の製造方法。
(付記6)前記第1のシリコン膜のうち前記第2のエッチング工程により除去される厚さは20nm以上であることを特徴とする付記1乃至付記5のいずれかに記載の半導体装置の製造方法。
(付記7)前記第2エッチング工程でエッチングされる前記第1のシリコン膜の前記第一導電型不純物濃度は1×1018atoms/cm3以上であることを特徴とする付記1乃至付記6のいずれかに記載の半導体装置の製造方法。
(付記8)前記第2エッチング工程は、CHxFy(x、yは原子数)ガスを含む第2反応ガスを使用すること特徴とする付記1乃至付記5のいずれかに記載の半導体装置の製造方法。
(付記9)前記CHxFyガスは、CH2F2とCHF3とCH3Fの少なくとも1つ含むことを特徴とする付記8に記載の半導体装置の製造方法。
(付記10)前記第2反応ガスには、Cl2、HBr、HI、Br2のうち少なくとも1つのガスを含むことを特徴とする付記8又は付記9に記載の半導体装置の製造方法。
(付記11)前記第2反応ガスの総流量に対する前記CHxFyのガス流量比は2〜5流量%であることを特徴とする付記8乃至付記10のいずれかに記載の半導体装置の製造方法。
(付記12)前記第3エッチング工程は、前記第3条件でエッチングを行う第1ステップと、前記第1絶縁膜のエッチングレートに対する前記第1のシリコン膜のエッチングレート比が、前記第3条件よりも大きくなる第4条件でエッチングを行う第2ステップと、を有することを特徴とする付記1乃至付記11のいずれかに記載の半導体装置の製造方法。
(付記13)前記第1絶縁膜の形成は、酸化シリコンを含む膜を気相成長により形成する工程であることを特徴とする付記1乃至付記12のいずれかに記載の半導体装置の製造方法。
(付記14)前記第1のシリコン膜、第2のシリコン膜は、それぞれポリシリコン膜、アモルファスシリコン膜のいずれかであることを特徴とする付記1乃至付記13のいずれかに記載の半導体装置の製造方法。
(付記15)前記第3エッチング工程の後、前記マスクを除去し、前記第2のシリコン膜上に金属膜を形成する工程と、前記金属膜及び前記第2のシリコン膜を加熱することにより、前記第2のシリコン膜に金属シリサイド膜を形成する工程と、を有することを特徴とする付記1乃至付記14のいずれかに記載の半導体装置の製造方法。
(付記16)前記第1及び第2のシリコン膜の前記パターンはトランジスタのゲート電極であることを特徴とする付記1乃至付記15のいずれかに記載の半導体装置の製造方法。
(付記17)前記第3エッチング工程の後、前記半導体基板全面に第2絶縁膜を形成する工程と、前記第2絶縁膜をエッチバックして前記ゲート電極の側面にサイドウォールスペーサとして残す工程と、前記ゲート電極及び前記サイドウォールスペーサをマスクにして前記半導体基板上に不純物を導入してソース/ドレイン領域を形成する工程と、を有することを特徴とする付記16に記載の半導体装置の製造方法。
(付記18)前記第1のシリコン膜又は前記第2のシリコン膜がアモルファスシリコン膜である場合、前記半導体基板全面に前記第2絶縁膜を形成する工程の後、前記第2絶縁膜をエッチバックして前記ゲート電極の側面にサイドウォールスペーサとして残す工程の前に、前記第1のシリコン膜又は第2のシリコン膜を加熱することにより、前記アモルファスシリコン膜を結晶化する工程とを有することを特徴とする付記16又は付記17に記載の半導体装置の製造方法。
(付記19)半導体基板の上に形成されたゲート絶縁膜と、前記ゲート絶縁膜上に配設され、1×1018atoms/cm3以上の第一導電型不純物濃度を有する第1のシリコン膜と、前記第1のシリコン膜上に配設され、1×1018atoms/cm3未満の第一導電型不純物濃度を有する第2のシリコン膜とからなり、前記第1のシリコン膜と前記第2のシリコン膜との界面における幅が、前記第1のシリコン膜の底面における幅の90%以上であるゲート電極と、前記ゲート電極の両側で前記半導体基板内に形成されたソース/ドレイン領域と、を有することを特徴とする半導体装置。
2 Pウェル
3 Nウェル
4 素子分離層
5 ゲート絶縁膜
6 第1のシリコン膜
9 第2のシリコン膜
10m ハードマスク
11 レジストパターン
12a,12b ゲート電極
13、14 ソース/ドレイン領域
15s サイドウォール
18〜21 シリサイド膜
Claims (10)
- 半導体基板の上に第1絶縁膜を形成する工程と、
前記第1絶縁膜上に第1のシリコン膜を形成する工程と、
前記第1のシリコン膜上に第2のシリコン膜を形成する工程と、
前記第2のシリコン膜上に所定パターンのマスク層を形成する工程と、
前記マスク層をエッチングマスクとして、前記第2のシリコン膜を前記第1のシリコン膜が露出しない深さまで第1条件によりエッチングする第1エッチング工程と、
第1条件に比べて垂直エッチング成分比の高い第2条件によって、前記第2のシリコン膜の残りと前記第1のシリコン膜を前記第1絶縁膜が露出しない深さまでエッチングする第2エッチング工程と、
前記第2条件に比べて、前記第1絶縁膜のエッチングレートに対する前記第1のシリコン膜のエッチングレートの比が大きな第3条件により前記第1のシリコン膜の残りをエッチングする第3エッチング工程とを有し、
前記第1のシリコン膜の第一導電型不純物濃度は、前記第2のシリコン膜の第一導電型不純物濃度よりも高いこと
を特徴とする半導体装置の製造方法。 - 前記第1条件によって、前記第2のシリコン膜は膜厚の70%以上の深さまでエッチングされることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第1のシリコン膜のうち前記第2のエッチング工程により除去される厚さは20nm以上であることを特徴とする請求項1又は請求項2に記載の半導体装置の製造方法。
- 前記第2エッチング工程でエッチングされる前記第1のシリコン膜の前記第一導電型不純物濃度は1×1018atoms/cm3以上であることを特徴とする請求項1乃至請求項3のいずれか1項に記載の半導体装置の製造方法。
- 前記第2エッチング工程は、CHxFy(x、yは原子数)ガスを含む第2反応ガスを使用する条件を含むこと特徴とする請求項1乃至請求項4のいずれか1項に記載の半導体装置の製造方法。
- 前記CHxFyガスは、CH2F2とCHF3とCH3Fの少なくとも1つ含むことを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記第2反応ガスには、Cl2、HBr、HI、Br2のうち少なくとも1つのガスを含むことを特徴とする請求項5又は請求項6に記載の半導体装置の製造方法。
- 前記第2反応ガスの総流量に対する前記CHxFyのガス流量比は2〜5流量%であることを特徴とする請求項5乃至請求項7のいずれか1項に記載の半導体装置の製造方法。
- 前記第3エッチング工程は、
前記第3条件でエッチングを行う第1ステップと、
前記第1絶縁膜のエッチングレートに対する前記第1のシリコン膜のエッチングレート比が、前記第3条件よりも大きくなる第4条件でエッチングを行う第2ステップと、
を有することを特徴とする請求項1乃至付請求項8のいずれか1項に記載の半導体装置の製造方法。 - 半導体基板の上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に配設され、1×1018atoms/cm3以上の第一導電型不純物濃度を有する第1のシリコン膜と、前記第1のシリコン膜上に配設され、1×1018atoms/cm3未満の第一導電型不純物濃度を有する第2のシリコン膜とからなり、前記第1のシリコン膜と前記第2のシリコン膜との界面における幅が、前記第1のシリコン膜の底面における幅の90%以上であるゲート電極と、
前記ゲート電極の両側で前記半導体基板内に形成されたソース/ドレイン領域と、
を有することを特徴とする半導体装置。
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