JP2008218642A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 50
- 229920005591 polysilicon Polymers 0.000 claims abstract description 47
- 239000012535 impurity Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 122
- 238000000034 method Methods 0.000 claims description 28
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 19
- 239000011574 phosphorus Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 16
- 239000003870 refractory metal Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000002344 surface layer Substances 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052710 silicon Inorganic materials 0.000 abstract description 20
- 239000010703 silicon Substances 0.000 abstract description 20
- 150000002500 ions Chemical class 0.000 abstract description 11
- 239000002019 doping agent Substances 0.000 abstract description 7
- 230000009977 dual effect Effects 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 37
- 229910021342 tungsten silicide Inorganic materials 0.000 description 18
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- -1 silicide nitride Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910008807 WSiN Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 238000007872 degassing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】溝ゲート用のシリコン層にイオン注入し、その後一旦ポリシリコン化し、再度イオン注入によりポリシリコン層の表面をアモルファス化(層9,10)して、プレーナゲート用の異なる導電型のイオン注入を行う。
【選択図】図5
Description
溝ゲートトランジスタを有するDRAMとプレーナゲートトランジスタを有するDRAMを共に有し、溝ゲートトランジスタとプレーナゲートトランジスタが共にポリメタルゲート構造を有し、それぞれ異なる導電型となるデュアルゲート構造である半導体装置の製造方法であって、
半導体基板に溝ゲートトランジスタ形成領域とプレーナゲートトランジスタ形成領域とを分離する素子分離絶縁膜を形成する工程
溝ゲートトランジスタ形成領域の半導体基板に溝を設ける工程、
全面にゲート絶縁膜を形成する工程、
前記溝ゲートトランジスタ形成領域の半導体基板に設けた溝を埋めて全面にアモルファスシリコン層を形成する工程、
前記溝ゲートトランジスタ形成領域のアモルファスシリコン層に、前記溝内のアモルファスシリコン層に到達する十分量の第一導電型の不純物を選択的にイオン注入する工程、
前記アモルファスシリコン層全面を加熱してポリシリコン層とする工程、
前記ポリシリコン層全面に第一導電型の不純物をイオン注入し、前記ポリシリコン層の表層をアモルファス化する工程、
前記プレーナゲートトランジスタ形成領域のアモルファス化した表層及びポリシリコン層に選択的に第二導電型の不純物をイオン注入する工程、
前記溝ゲートトランジスタ形成領域及び前記プレーナゲートトランジスタ形成領域のアモルファス化した表層上に、第一の高融点金属のシリサイド層、前記第一の高融点金属の窒化層、及び、第二の高融点金属層を順次に積層する工程、
前記半導体基板上に積層された層を一体的に熱処理する工程、及び
前記半導体基板上に積層された層を溝ゲート構造及びプレーナゲート構造にそれぞれ成形する工程
とを有する半導体装置の製造方法である。
2 素子分離絶縁膜
3 溝ゲートホール
4 ゲート酸化膜
5 ノンドープアモルファスシリコン層
6 レジストマスク
7 リンドープポリシリコン層
8 ノンドープポリシリコン層
9,10 アモルファスシリコン層
11 レジストマスク
12 P型シリコン層
13 タングステンシリサイド層
14 窒化タングステン層
15 タングステン層
16 シリコン窒化膜
17 N型ポリメタルゲート電極
18 P型ポリメタルゲート電極
Claims (5)
- 溝ゲートトランジスタを有するDRAMとプレーナゲートトランジスタを有するDRAMを共に有し、溝ゲートトランジスタとプレーナゲートトランジスタが共にポリメタルゲート構造を有し、それぞれ異なる導電型となるデュアルゲート構造である半導体装置の製造方法であって、
半導体基板に溝ゲートトランジスタ形成領域とプレーナゲートトランジスタ形成領域とを分離する素子分離絶縁膜を形成する工程
溝ゲートトランジスタ形成領域の半導体基板に溝を設ける工程、
全面にゲート絶縁膜を形成する工程、
前記溝ゲートトランジスタ形成領域の半導体基板に設けた溝を埋めて全面にアモルファスシリコン層を形成する工程、
前記溝ゲートトランジスタ形成領域のアモルファスシリコン層に、前記溝内のアモルファスシリコン層に到達する十分量の第一導電型の不純物を選択的にイオン注入する工程、
前記アモルファスシリコン層全面を加熱してポリシリコン層とする工程、
前記ポリシリコン層全面に第一導電型の不純物をイオン注入し、前記ポリシリコン層の表層をアモルファス化する工程、
前記プレーナゲートトランジスタ形成領域のアモルファス化した表層及びポリシリコン層に選択的に第二導電型の不純物をイオン注入する工程、
前記溝ゲートトランジスタ形成領域及び前記プレーナゲートトランジスタ形成領域のアモルファス化した表層上に、第一の高融点金属のシリサイド層、前記第一の高融点金属の窒化層、及び、第二の高融点金属層を順次に積層する工程、
前記半導体基板上に積層された層を一体的に熱処理する工程、及び
前記半導体基板上に積層された層を溝ゲート構造及びプレーナゲート構造にそれぞれ成形する工程
とを有する半導体装置の製造方法。 - 前記第一導電型がN型であり、第二導電型がP型である請求項1に記載の半導体装置の製造方法。
- 前記第一導電型の不純物がリンであり、前記第二導電型の不純物がボロンである請求項2に記載の半導体装置の製造方法。
- 前記ポリシリコン層の表層をアモルファス化する工程では、5〜30nmの表層をアモルファス化する請求項1乃至3のいずれか1項に記載の半導体装置の製造方法。
- 前記第一及び第二の高融点金属がタングステンである請求項1乃至4のいずれか1項に記載の半導体装置の製造方法。
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JP2007052783A JP4299866B2 (ja) | 2007-03-02 | 2007-03-02 | 半導体装置の製造方法 |
US12/071,971 US7563698B2 (en) | 2007-03-02 | 2008-02-28 | Method for manufacturing semiconductor device |
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KR101076887B1 (ko) | 2009-06-26 | 2011-10-25 | 주식회사 하이닉스반도체 | 반도체 메모리소자의 랜딩플러그 형성방법 |
CN102956639B (zh) * | 2011-08-19 | 2018-05-08 | 联华电子股份有限公司 | 沟槽型金属氧化物半导体元件及其制造方法 |
KR20130116099A (ko) * | 2012-04-13 | 2013-10-23 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
CN112151367B (zh) * | 2020-10-30 | 2022-08-09 | 上海华力微电子有限公司 | 半导体器件及其形成方法 |
CN113611718B (zh) * | 2021-07-29 | 2024-05-28 | 上海华力微电子有限公司 | 一种垂直栅半导体器件的制备方法 |
CN113611716A (zh) * | 2021-07-29 | 2021-11-05 | 上海华力微电子有限公司 | 一种垂直栅半导体器件的制备方法 |
CN118198000A (zh) * | 2024-05-20 | 2024-06-14 | 合肥晶合集成电路股份有限公司 | 双栅氧化层及其形成方法 |
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JP3431467B2 (ja) * | 1997-09-17 | 2003-07-28 | 株式会社東芝 | 高耐圧半導体装置 |
JP3781666B2 (ja) | 2001-11-29 | 2006-05-31 | エルピーダメモリ株式会社 | ゲート電極の形成方法及びゲート電極構造 |
JP4094379B2 (ja) * | 2002-08-27 | 2008-06-04 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
JP4331690B2 (ja) * | 2003-04-30 | 2009-09-16 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR100511045B1 (ko) | 2003-07-14 | 2005-08-30 | 삼성전자주식회사 | 리세스된 게이트 전극을 갖는 반도체 소자의 집적방법 |
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2007
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US20080213983A1 (en) | 2008-09-04 |
US7563698B2 (en) | 2009-07-21 |
JP4299866B2 (ja) | 2009-07-22 |
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