JP2008091534A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008091534A5 JP2008091534A5 JP2006269304A JP2006269304A JP2008091534A5 JP 2008091534 A5 JP2008091534 A5 JP 2008091534A5 JP 2006269304 A JP2006269304 A JP 2006269304A JP 2006269304 A JP2006269304 A JP 2006269304A JP 2008091534 A5 JP2008091534 A5 JP 2008091534A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- processing
- module
- hydrogen fluoride
- composite product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 71
- 239000000126 substance Substances 0.000 claims 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 16
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 16
- 239000002131 composite material Substances 0.000 claims 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 12
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 12
- 229910052799 carbon Inorganic materials 0.000 claims 12
- 229910052731 fluorine Inorganic materials 0.000 claims 12
- 239000011737 fluorine Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims 12
- 238000003672 processing method Methods 0.000 claims 11
- 239000005416 organic matter Substances 0.000 claims 10
- 238000010438 heat treatment Methods 0.000 claims 7
- 238000004140 cleaning Methods 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 3
- 239000011368 organic material Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000004590 computer program Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 229910010272 inorganic material Inorganic materials 0.000 claims 2
- 239000011147 inorganic material Substances 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006269304A JP4661753B2 (ja) | 2006-09-29 | 2006-09-29 | 基板処理方法、洗浄方法及び記憶媒体 |
| TW096136351A TWI497577B (zh) | 2006-09-29 | 2007-09-28 | A substrate processing method and a substrate processing apparatus |
| CN2010102296825A CN101958233B (zh) | 2006-09-29 | 2007-10-01 | 洗净方法 |
| CN2007800129311A CN101421828B (zh) | 2006-09-29 | 2007-10-01 | 基板处理方法和基板处理装置 |
| US12/443,484 US8647440B2 (en) | 2006-09-29 | 2007-10-01 | Substrate processing method and substrate processing apparatus |
| KR1020097006322A KR101167355B1 (ko) | 2006-09-29 | 2007-10-01 | 기판 처리 방법 및 기판 처리 장치 |
| PCT/JP2007/069206 WO2008038823A1 (en) | 2006-09-29 | 2007-10-01 | Substrate treatment method and substrate treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006269304A JP4661753B2 (ja) | 2006-09-29 | 2006-09-29 | 基板処理方法、洗浄方法及び記憶媒体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008091534A JP2008091534A (ja) | 2008-04-17 |
| JP2008091534A5 true JP2008091534A5 (enExample) | 2009-07-02 |
| JP4661753B2 JP4661753B2 (ja) | 2011-03-30 |
Family
ID=39230250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006269304A Expired - Fee Related JP4661753B2 (ja) | 2006-09-29 | 2006-09-29 | 基板処理方法、洗浄方法及び記憶媒体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8647440B2 (enExample) |
| JP (1) | JP4661753B2 (enExample) |
| KR (1) | KR101167355B1 (enExample) |
| CN (2) | CN101421828B (enExample) |
| TW (1) | TWI497577B (enExample) |
| WO (1) | WO2008038823A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2166564B1 (en) * | 2008-09-19 | 2017-04-12 | Imec | Method for removing a hardened photoresist from a semiconductor substrate |
| US8528224B2 (en) | 2009-11-12 | 2013-09-10 | Novellus Systems, Inc. | Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia |
| JP5859262B2 (ja) * | 2011-09-29 | 2016-02-10 | 東京エレクトロン株式会社 | 堆積物除去方法 |
| JP5996857B2 (ja) * | 2011-09-30 | 2016-09-21 | 東京エレクトロン株式会社 | 駆動装置及び基板処理システム |
| JP6024272B2 (ja) * | 2011-12-22 | 2016-11-16 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP5837829B2 (ja) * | 2012-01-11 | 2015-12-24 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP6017170B2 (ja) * | 2012-04-18 | 2016-10-26 | 東京エレクトロン株式会社 | 堆積物除去方法及びガス処理装置 |
| JP6381332B2 (ja) * | 2013-09-19 | 2018-08-29 | 浜松ホトニクス株式会社 | 半導体デバイスの製造方法 |
| CN104576305A (zh) * | 2013-10-23 | 2015-04-29 | 中微半导体设备(上海)有限公司 | 自清洁真空处理腔室 |
| JP6428466B2 (ja) * | 2014-06-23 | 2018-11-28 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、基板処理システム及び記憶媒体 |
| CN105448760A (zh) * | 2014-08-20 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 一种提高晶圆测试稳定性的方法 |
| US10872760B2 (en) * | 2016-07-26 | 2020-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cluster tool and manufacuturing method of semiconductor structure using the same |
| CN106847745A (zh) * | 2017-03-03 | 2017-06-13 | 京东方科技集团股份有限公司 | 一种低温多晶硅基板的制作方法和低温多晶硅基板 |
| JP7126468B2 (ja) | 2019-03-20 | 2022-08-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7315376B2 (ja) * | 2019-05-24 | 2023-07-26 | 東京応化工業株式会社 | 基板洗浄方法、基板洗浄装置及び基板洗浄用キット |
| KR102633148B1 (ko) | 2019-05-28 | 2024-02-06 | 삼성전자주식회사 | 관통 비아를 포함하는 반도체 장치 및 이의 제조 방법 |
| CN114496737B (zh) * | 2020-11-12 | 2024-09-13 | 长鑫存储技术有限公司 | 半导体器件及其制造方法 |
| US20230268223A1 (en) * | 2022-02-24 | 2023-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices and methods of manufacture |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2708462B2 (ja) * | 1988-04-28 | 1998-02-04 | 株式会社日立製作所 | 半導体基板の表面処理方法、半導体基板の表面処理装置及び半導体基板表面処理膜 |
| JP3133054B2 (ja) * | 1990-07-26 | 2001-02-05 | 大日本スクリーン製造株式会社 | 基板の洗浄処理方法及び洗浄処理装置 |
| US6465374B1 (en) * | 1997-10-21 | 2002-10-15 | Fsi International, Inc. | Method of surface preparation |
| JP2000173965A (ja) * | 1998-12-07 | 2000-06-23 | Japan Science & Technology Corp | 高速剪断流による洗浄方法 |
| US6831018B2 (en) * | 2001-08-21 | 2004-12-14 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device |
| US7374696B2 (en) * | 2003-02-14 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for removing a halogen-containing residue |
| JP2005228790A (ja) * | 2004-02-10 | 2005-08-25 | Mitsubishi Electric Corp | レジスト除去方法およびレジスト除去装置ならびに半導体ウエハ |
| JP4675127B2 (ja) * | 2004-04-23 | 2011-04-20 | 東京エレクトロン株式会社 | 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム |
| JP2005052967A (ja) * | 2004-10-15 | 2005-03-03 | Sumitomo Precision Prod Co Ltd | エッチング表面の洗浄方法 |
| TWI325150B (en) * | 2004-11-04 | 2010-05-21 | Nec Corp | Method of processing substrate and chemical used in the same (2) |
| JP4349273B2 (ja) * | 2004-12-17 | 2009-10-21 | セイコーエプソン株式会社 | 成膜方法、液体供給ヘッドおよび液体供給装置 |
| JP4308806B2 (ja) * | 2004-12-21 | 2009-08-05 | セイコーエプソン株式会社 | 半導体基板の処理方法、半導体部品および電子機器 |
| US8057153B2 (en) * | 2006-09-05 | 2011-11-15 | Tokyo Electron Limited | Substrate transfer device, substrate processing apparatus and substrate transfer method |
-
2006
- 2006-09-29 JP JP2006269304A patent/JP4661753B2/ja not_active Expired - Fee Related
-
2007
- 2007-09-28 TW TW096136351A patent/TWI497577B/zh not_active IP Right Cessation
- 2007-10-01 CN CN2007800129311A patent/CN101421828B/zh not_active Expired - Fee Related
- 2007-10-01 CN CN2010102296825A patent/CN101958233B/zh not_active Expired - Fee Related
- 2007-10-01 KR KR1020097006322A patent/KR101167355B1/ko not_active Expired - Fee Related
- 2007-10-01 WO PCT/JP2007/069206 patent/WO2008038823A1/ja not_active Ceased
- 2007-10-01 US US12/443,484 patent/US8647440B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008091534A5 (enExample) | ||
| TWI497577B (zh) | A substrate processing method and a substrate processing apparatus | |
| JP5516046B2 (ja) | 接合膜転写シートおよび接合方法 | |
| CN109155252B (zh) | 处理被处理体的方法 | |
| JP3901156B2 (ja) | マスク形成方法及び除去方法、並びに該手法により製造された半導体デバイス、電気回路、表示体モジュール、カラーフィルタ及び発光素子 | |
| JP2016021546A (ja) | 基板処理システム及び基板処理方法 | |
| JP6114636B2 (ja) | 乾燥装置及び乾燥処理方法 | |
| TW200705542A (en) | Hybrid PVD-CVD system | |
| JP6263450B2 (ja) | 有機単分子膜形成方法 | |
| JP2009094487A5 (enExample) | ||
| JP2015162544A5 (enExample) | ||
| JP2013534731A5 (enExample) | ||
| US20150303094A1 (en) | Apparatus and method for treating substrate | |
| JP2014011357A5 (enExample) | ||
| JP5722008B2 (ja) | 半導体デバイスの製造方法、半導体デバイス及び基板処理装置 | |
| JP2010500761A5 (enExample) | ||
| TW200507111A (en) | Method and apparatus for forming silicon oxide film | |
| JP2015173159A (ja) | プラズマ処理装置、薄膜トランジスターの製造方法及び記憶媒体 | |
| JP2010225847A (ja) | 真空処理装置，減圧処理方法，基板処理方法 | |
| JP2016143803A5 (enExample) | ||
| JP2009099581A (ja) | エッチング装置、無欠陥層基板の製造方法 | |
| JP2004216321A5 (enExample) | ||
| TW202128295A (zh) | 半導體裝置的製造方法，基板處理裝置及程式 | |
| JP2004174659A (ja) | グローブボックス装置 | |
| JP2012049349A5 (ja) | 基板処理装置及び半導体装置の製造方法 |