KR101167355B1 - 기판 처리 방법 및 기판 처리 장치 - Google Patents

기판 처리 방법 및 기판 처리 장치 Download PDF

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Publication number
KR101167355B1
KR101167355B1 KR1020097006322A KR20097006322A KR101167355B1 KR 101167355 B1 KR101167355 B1 KR 101167355B1 KR 1020097006322 A KR1020097006322 A KR 1020097006322A KR 20097006322 A KR20097006322 A KR 20097006322A KR 101167355 B1 KR101167355 B1 KR 101167355B1
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substrate
hydrogen fluoride
treatment
silicon oxide
processing
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English (en)
Korean (ko)
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KR20090057065A (ko
Inventor
시게루 가와무라
데루유키 하야시
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020097006322A 2006-09-29 2007-10-01 기판 처리 방법 및 기판 처리 장치 Expired - Fee Related KR101167355B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006269304A JP4661753B2 (ja) 2006-09-29 2006-09-29 基板処理方法、洗浄方法及び記憶媒体
JPJP-P-2006-269304 2006-09-29
PCT/JP2007/069206 WO2008038823A1 (en) 2006-09-29 2007-10-01 Substrate treatment method and substrate treatment apparatus

Publications (2)

Publication Number Publication Date
KR20090057065A KR20090057065A (ko) 2009-06-03
KR101167355B1 true KR101167355B1 (ko) 2012-07-19

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KR1020097006322A Expired - Fee Related KR101167355B1 (ko) 2006-09-29 2007-10-01 기판 처리 방법 및 기판 처리 장치

Country Status (6)

Country Link
US (1) US8647440B2 (enExample)
JP (1) JP4661753B2 (enExample)
KR (1) KR101167355B1 (enExample)
CN (2) CN101421828B (enExample)
TW (1) TWI497577B (enExample)
WO (1) WO2008038823A1 (enExample)

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EP2166564B1 (en) * 2008-09-19 2017-04-12 Imec Method for removing a hardened photoresist from a semiconductor substrate
US8528224B2 (en) 2009-11-12 2013-09-10 Novellus Systems, Inc. Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia
JP5859262B2 (ja) * 2011-09-29 2016-02-10 東京エレクトロン株式会社 堆積物除去方法
JP5996857B2 (ja) * 2011-09-30 2016-09-21 東京エレクトロン株式会社 駆動装置及び基板処理システム
JP6024272B2 (ja) * 2011-12-22 2016-11-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5837829B2 (ja) * 2012-01-11 2015-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6017170B2 (ja) * 2012-04-18 2016-10-26 東京エレクトロン株式会社 堆積物除去方法及びガス処理装置
JP6381332B2 (ja) * 2013-09-19 2018-08-29 浜松ホトニクス株式会社 半導体デバイスの製造方法
CN104576305A (zh) * 2013-10-23 2015-04-29 中微半导体设备(上海)有限公司 自清洁真空处理腔室
JP6428466B2 (ja) * 2014-06-23 2018-11-28 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
CN105448760A (zh) * 2014-08-20 2016-03-30 中芯国际集成电路制造(上海)有限公司 一种提高晶圆测试稳定性的方法
US10872760B2 (en) * 2016-07-26 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and manufacuturing method of semiconductor structure using the same
CN106847745A (zh) * 2017-03-03 2017-06-13 京东方科技集团股份有限公司 一种低温多晶硅基板的制作方法和低温多晶硅基板
JP7126468B2 (ja) 2019-03-20 2022-08-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7315376B2 (ja) * 2019-05-24 2023-07-26 東京応化工業株式会社 基板洗浄方法、基板洗浄装置及び基板洗浄用キット
KR102633148B1 (ko) 2019-05-28 2024-02-06 삼성전자주식회사 관통 비아를 포함하는 반도체 장치 및 이의 제조 방법
CN114496737B (zh) * 2020-11-12 2024-09-13 长鑫存储技术有限公司 半导体器件及其制造方法
US20230268223A1 (en) * 2022-02-24 2023-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture

Citations (1)

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JP2005052967A (ja) 2004-10-15 2005-03-03 Sumitomo Precision Prod Co Ltd エッチング表面の洗浄方法

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JP2708462B2 (ja) * 1988-04-28 1998-02-04 株式会社日立製作所 半導体基板の表面処理方法、半導体基板の表面処理装置及び半導体基板表面処理膜
JP3133054B2 (ja) * 1990-07-26 2001-02-05 大日本スクリーン製造株式会社 基板の洗浄処理方法及び洗浄処理装置
US6465374B1 (en) * 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
JP2000173965A (ja) * 1998-12-07 2000-06-23 Japan Science & Technology Corp 高速剪断流による洗浄方法
US6831018B2 (en) * 2001-08-21 2004-12-14 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
US7374696B2 (en) * 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
JP2005228790A (ja) * 2004-02-10 2005-08-25 Mitsubishi Electric Corp レジスト除去方法およびレジスト除去装置ならびに半導体ウエハ
JP4675127B2 (ja) * 2004-04-23 2011-04-20 東京エレクトロン株式会社 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム
TWI325150B (en) * 2004-11-04 2010-05-21 Nec Corp Method of processing substrate and chemical used in the same (2)
JP4349273B2 (ja) * 2004-12-17 2009-10-21 セイコーエプソン株式会社 成膜方法、液体供給ヘッドおよび液体供給装置
JP4308806B2 (ja) * 2004-12-21 2009-08-05 セイコーエプソン株式会社 半導体基板の処理方法、半導体部品および電子機器
US8057153B2 (en) * 2006-09-05 2011-11-15 Tokyo Electron Limited Substrate transfer device, substrate processing apparatus and substrate transfer method

Patent Citations (1)

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JP2005052967A (ja) 2004-10-15 2005-03-03 Sumitomo Precision Prod Co Ltd エッチング表面の洗浄方法

Also Published As

Publication number Publication date
TWI497577B (zh) 2015-08-21
CN101421828A (zh) 2009-04-29
JP4661753B2 (ja) 2011-03-30
CN101421828B (zh) 2011-03-30
CN101958233B (zh) 2013-01-02
WO2008038823A1 (en) 2008-04-03
JP2008091534A (ja) 2008-04-17
US20100043820A1 (en) 2010-02-25
CN101958233A (zh) 2011-01-26
US8647440B2 (en) 2014-02-11
TW200832535A (en) 2008-08-01
KR20090057065A (ko) 2009-06-03

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