CN101421828B - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置 Download PDF

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Publication number
CN101421828B
CN101421828B CN2007800129311A CN200780012931A CN101421828B CN 101421828 B CN101421828 B CN 101421828B CN 2007800129311 A CN2007800129311 A CN 2007800129311A CN 200780012931 A CN200780012931 A CN 200780012931A CN 101421828 B CN101421828 B CN 101421828B
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China
Prior art keywords
substrate
module
treatment
hydrogen fluoride
container handling
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Expired - Fee Related
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CN2007800129311A
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English (en)
Chinese (zh)
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CN101421828A (zh
Inventor
川村茂
林辉幸
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2007800129311A 2006-09-29 2007-10-01 基板处理方法和基板处理装置 Expired - Fee Related CN101421828B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006269304A JP4661753B2 (ja) 2006-09-29 2006-09-29 基板処理方法、洗浄方法及び記憶媒体
JP269304/2006 2006-09-29
PCT/JP2007/069206 WO2008038823A1 (en) 2006-09-29 2007-10-01 Substrate treatment method and substrate treatment apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2010102296825A Division CN101958233B (zh) 2006-09-29 2007-10-01 洗净方法

Publications (2)

Publication Number Publication Date
CN101421828A CN101421828A (zh) 2009-04-29
CN101421828B true CN101421828B (zh) 2011-03-30

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CN2007800129311A Expired - Fee Related CN101421828B (zh) 2006-09-29 2007-10-01 基板处理方法和基板处理装置
CN2010102296825A Expired - Fee Related CN101958233B (zh) 2006-09-29 2007-10-01 洗净方法

Family Applications After (1)

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CN2010102296825A Expired - Fee Related CN101958233B (zh) 2006-09-29 2007-10-01 洗净方法

Country Status (6)

Country Link
US (1) US8647440B2 (enExample)
JP (1) JP4661753B2 (enExample)
KR (1) KR101167355B1 (enExample)
CN (2) CN101421828B (enExample)
TW (1) TWI497577B (enExample)
WO (1) WO2008038823A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2166564B1 (en) * 2008-09-19 2017-04-12 Imec Method for removing a hardened photoresist from a semiconductor substrate
US8528224B2 (en) 2009-11-12 2013-09-10 Novellus Systems, Inc. Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia
JP5859262B2 (ja) * 2011-09-29 2016-02-10 東京エレクトロン株式会社 堆積物除去方法
JP5996857B2 (ja) * 2011-09-30 2016-09-21 東京エレクトロン株式会社 駆動装置及び基板処理システム
JP6024272B2 (ja) * 2011-12-22 2016-11-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5837829B2 (ja) * 2012-01-11 2015-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6017170B2 (ja) * 2012-04-18 2016-10-26 東京エレクトロン株式会社 堆積物除去方法及びガス処理装置
JP6381332B2 (ja) * 2013-09-19 2018-08-29 浜松ホトニクス株式会社 半導体デバイスの製造方法
CN104576305A (zh) * 2013-10-23 2015-04-29 中微半导体设备(上海)有限公司 自清洁真空处理腔室
JP6428466B2 (ja) * 2014-06-23 2018-11-28 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
CN105448760A (zh) * 2014-08-20 2016-03-30 中芯国际集成电路制造(上海)有限公司 一种提高晶圆测试稳定性的方法
US10872760B2 (en) * 2016-07-26 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and manufacuturing method of semiconductor structure using the same
CN106847745A (zh) * 2017-03-03 2017-06-13 京东方科技集团股份有限公司 一种低温多晶硅基板的制作方法和低温多晶硅基板
JP7126468B2 (ja) 2019-03-20 2022-08-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7315376B2 (ja) * 2019-05-24 2023-07-26 東京応化工業株式会社 基板洗浄方法、基板洗浄装置及び基板洗浄用キット
KR102633148B1 (ko) 2019-05-28 2024-02-06 삼성전자주식회사 관통 비아를 포함하는 반도체 장치 및 이의 제조 방법
CN114496737B (zh) * 2020-11-12 2024-09-13 长鑫存储技术有限公司 半导体器件及其制造方法
US20230268223A1 (en) * 2022-02-24 2023-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture

Citations (2)

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JP2005052967A (ja) * 2004-10-15 2005-03-03 Sumitomo Precision Prod Co Ltd エッチング表面の洗浄方法
CN1803454A (zh) * 2004-12-17 2006-07-19 精工爱普生株式会社 成膜方法、液体供给头及液体供给装置

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JP2708462B2 (ja) * 1988-04-28 1998-02-04 株式会社日立製作所 半導体基板の表面処理方法、半導体基板の表面処理装置及び半導体基板表面処理膜
JP3133054B2 (ja) * 1990-07-26 2001-02-05 大日本スクリーン製造株式会社 基板の洗浄処理方法及び洗浄処理装置
US6465374B1 (en) * 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
JP2000173965A (ja) * 1998-12-07 2000-06-23 Japan Science & Technology Corp 高速剪断流による洗浄方法
US6831018B2 (en) * 2001-08-21 2004-12-14 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
US7374696B2 (en) * 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
JP2005228790A (ja) * 2004-02-10 2005-08-25 Mitsubishi Electric Corp レジスト除去方法およびレジスト除去装置ならびに半導体ウエハ
JP4675127B2 (ja) * 2004-04-23 2011-04-20 東京エレクトロン株式会社 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム
TWI325150B (en) * 2004-11-04 2010-05-21 Nec Corp Method of processing substrate and chemical used in the same (2)
JP4308806B2 (ja) * 2004-12-21 2009-08-05 セイコーエプソン株式会社 半導体基板の処理方法、半導体部品および電子機器
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Patent Citations (2)

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JP2005052967A (ja) * 2004-10-15 2005-03-03 Sumitomo Precision Prod Co Ltd エッチング表面の洗浄方法
CN1803454A (zh) * 2004-12-17 2006-07-19 精工爱普生株式会社 成膜方法、液体供给头及液体供给装置

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Also Published As

Publication number Publication date
KR101167355B1 (ko) 2012-07-19
TWI497577B (zh) 2015-08-21
CN101421828A (zh) 2009-04-29
JP4661753B2 (ja) 2011-03-30
CN101958233B (zh) 2013-01-02
WO2008038823A1 (en) 2008-04-03
JP2008091534A (ja) 2008-04-17
US20100043820A1 (en) 2010-02-25
CN101958233A (zh) 2011-01-26
US8647440B2 (en) 2014-02-11
TW200832535A (en) 2008-08-01
KR20090057065A (ko) 2009-06-03

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