JP2008077074A5 - - Google Patents
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- Publication number
- JP2008077074A5 JP2008077074A5 JP2007215391A JP2007215391A JP2008077074A5 JP 2008077074 A5 JP2008077074 A5 JP 2008077074A5 JP 2007215391 A JP2007215391 A JP 2007215391A JP 2007215391 A JP2007215391 A JP 2007215391A JP 2008077074 A5 JP2008077074 A5 JP 2008077074A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating
- light
- forming
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000031700 light absorption Effects 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 230000001678 irradiating effect Effects 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007215391A JP5268304B2 (ja) | 2006-08-24 | 2007-08-22 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006228350 | 2006-08-24 | ||
| JP2006228350 | 2006-08-24 | ||
| JP2007215391A JP5268304B2 (ja) | 2006-08-24 | 2007-08-22 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008077074A JP2008077074A (ja) | 2008-04-03 |
| JP2008077074A5 true JP2008077074A5 (enExample) | 2010-10-07 |
| JP5268304B2 JP5268304B2 (ja) | 2013-08-21 |
Family
ID=39106715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007215391A Expired - Fee Related JP5268304B2 (ja) | 2006-08-24 | 2007-08-22 | 半導体装置の作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7727847B2 (enExample) |
| JP (1) | JP5268304B2 (enExample) |
| KR (1) | KR101346246B1 (enExample) |
| WO (1) | WO2008023630A1 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003015117A1 (en) * | 2001-08-11 | 2003-02-20 | The University Court Of The University Of Dundee | Field emission backplate |
| TWI412079B (zh) * | 2006-07-28 | 2013-10-11 | Semiconductor Energy Lab | 製造顯示裝置的方法 |
| US7943287B2 (en) * | 2006-07-28 | 2011-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US8563431B2 (en) * | 2006-08-25 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7749907B2 (en) * | 2006-08-25 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8148259B2 (en) | 2006-08-30 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7838410B2 (en) * | 2007-07-11 | 2010-11-23 | Sony Corporation | Method of electrically connecting element to wiring, method of producing light-emitting element assembly, and light-emitting element assembly |
| DE102007046851B4 (de) * | 2007-09-29 | 2019-01-10 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Halbleiterstruktur mit einem elektrisch leitfähigen Strukturelement und Verfahren zum Ausbilden einer Halbleiterstruktur |
| KR101689519B1 (ko) * | 2007-12-26 | 2016-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법 |
| US8080811B2 (en) | 2007-12-28 | 2011-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing evaporation donor substrate and light-emitting device |
| WO2009099002A1 (en) * | 2008-02-04 | 2009-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and method for manufacturing light-emitting device |
| WO2009107548A1 (en) * | 2008-02-29 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
| US20090218219A1 (en) * | 2008-02-29 | 2009-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Apparatus |
| JP5416987B2 (ja) | 2008-02-29 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
| JP5238544B2 (ja) * | 2008-03-07 | 2013-07-17 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
| US8182863B2 (en) * | 2008-03-17 | 2012-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Deposition method and manufacturing method of light-emitting device |
| DE102008015697A1 (de) * | 2008-03-26 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strukturierten optoelektronischen Bauelementes und Anordnung zur Durchführung eines solchen |
| US8409672B2 (en) * | 2008-04-24 | 2013-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device |
| TWI389211B (zh) * | 2008-04-30 | 2013-03-11 | 奇美電子股份有限公司 | 影像顯示系統及其製造方法 |
| KR101629637B1 (ko) * | 2008-05-29 | 2016-06-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 성막방법 및 발광장치의 제조방법 |
| EP2308093B1 (en) * | 2008-08-04 | 2020-04-15 | The Trustees of Princeton University | Hybrid dielectric material for thin film transistors |
| US8486736B2 (en) * | 2008-10-20 | 2013-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
| JP4666068B2 (ja) * | 2008-12-11 | 2011-04-06 | カシオ計算機株式会社 | 保護板一体型液晶表示パネル及びその製造方法 |
| DE112010001707T5 (de) * | 2009-04-21 | 2012-11-08 | Youna T&E Co. Ltd. | Photovoltaik-Modul mit Kühlvorrichtung und Herstellungsmethode der Kühlvorrichtung |
| WO2011037102A1 (ja) * | 2009-09-28 | 2011-03-31 | 凸版印刷株式会社 | アクティブマトリクス基板及びその製造方法並びに画像表示装置 |
| IN2012DN01823A (enExample) * | 2009-10-16 | 2015-06-05 | Semiconductor Energy Lab | |
| KR20120028080A (ko) * | 2010-09-14 | 2012-03-22 | 삼성모바일디스플레이주식회사 | 액정 표시 장치 및 액정 표시 장치의 제조 방법 |
| DE102010046966B4 (de) * | 2010-09-29 | 2018-05-24 | Infineon Technologies Ag | Baustein und Verfahren zur Herstellung eines Bausteins |
| WO2012043971A2 (ko) * | 2010-09-29 | 2012-04-05 | 포항공과대학교 산학협력단 | 롤 형상의 모기판을 이용한 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판 |
| WO2012057430A1 (ko) * | 2010-10-29 | 2012-05-03 | 주식회사 씨원코퍼레이션 | 엘이디 메탈 사인보드 |
| JP2013033843A (ja) * | 2011-08-02 | 2013-02-14 | Sony Corp | 回路基板、回路基板の製造方法、表示装置および電子機器 |
| JP2013115098A (ja) * | 2011-11-25 | 2013-06-10 | Sony Corp | トランジスタ、トランジスタの製造方法、表示装置および電子機器 |
| KR20140020114A (ko) * | 2012-08-08 | 2014-02-18 | 삼성전기주식회사 | 금속 방열기판 및 그 제조방법 |
| JP6031650B2 (ja) * | 2013-03-29 | 2016-11-24 | 株式会社Joled | 表示装置およびその製造方法、並びに電子機器 |
| KR20150056112A (ko) * | 2013-11-14 | 2015-05-26 | 삼성디스플레이 주식회사 | 막 형성용 마스크, 이를 이용한 막 형성 방법 및 유기 발광 표시 장치의 제조 방법 |
| KR101748105B1 (ko) | 2014-03-11 | 2017-06-15 | 국립대학법인 야마가타대학 | 배선 형성 방법 |
| CN103809236A (zh) * | 2014-03-12 | 2014-05-21 | 中国电子科技集团公司第三十八研究所 | 一种基于mems高精度网点导光板的制作方法 |
| KR102402599B1 (ko) * | 2015-12-16 | 2022-05-26 | 삼성디스플레이 주식회사 | 트랜지스터 표시판 및 그 제조 방법 |
| US10694641B2 (en) * | 2016-04-29 | 2020-06-23 | Intel Corporation | Wickless capillary driven constrained vapor bubble heat pipes for application in electronic devices with various system platforms |
| US20180301647A1 (en) * | 2017-03-31 | 2018-10-18 | Scott Hohulin Family 2014 Irrevocable Trust | Film Technologies Processes and Production of Products Thereby |
| JP6616368B2 (ja) * | 2017-09-14 | 2019-12-04 | ファナック株式会社 | レーザ加工前に光学系の汚染レベルに応じて加工条件を補正するレーザ加工装置 |
| JP6938312B2 (ja) * | 2017-09-28 | 2021-09-22 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102515817B1 (ko) * | 2017-11-28 | 2023-03-29 | 엘지디스플레이 주식회사 | 발광체, 이를 포함하는 발광 필름, 발광다이오드 및 발광장치 |
| DE102019121881A1 (de) * | 2019-08-14 | 2021-02-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
| US20240250133A1 (en) * | 2022-09-30 | 2024-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (51)
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| US4594471A (en) | 1983-07-13 | 1986-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US4713518A (en) | 1984-06-08 | 1987-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device manufacturing methods |
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| JP3071851B2 (ja) | 1991-03-25 | 2000-07-31 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
| US5373627A (en) * | 1993-11-23 | 1994-12-20 | Grebe; Kurt R. | Method of forming multi-chip module with high density interconnections |
| US5866444A (en) | 1995-03-21 | 1999-02-02 | Semiconductor Energy Laboratory Co. | Integrated circuit and method of fabricating the same |
| JP2755223B2 (ja) * | 1995-09-20 | 1998-05-20 | 日本電気株式会社 | バイアホール形成方法および装置 |
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| JPH11300487A (ja) * | 1998-04-20 | 1999-11-02 | Sony Corp | 孔加工方法及び孔加工体 |
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| JP2000252609A (ja) * | 1999-02-26 | 2000-09-14 | Omron Corp | プリント基板およびその加工方法 |
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| JP3813402B2 (ja) * | 2000-01-31 | 2006-08-23 | 新光電気工業株式会社 | 半導体装置の製造方法 |
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| JP5181317B2 (ja) * | 2001-08-31 | 2013-04-10 | Nltテクノロジー株式会社 | 反射型液晶表示装置およびその製造方法 |
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| JP3910908B2 (ja) * | 2002-10-29 | 2007-04-25 | 新光電気工業株式会社 | 半導体装置用基板及びこの製造方法、並びに半導体装置 |
| WO2004070810A1 (ja) | 2003-02-05 | 2004-08-19 | Semiconductor Energy Laboratory Co., Ltd. | 表示装置の製造方法 |
| JP4731913B2 (ja) | 2003-04-25 | 2011-07-27 | 株式会社半導体エネルギー研究所 | パターンの形成方法および半導体装置の製造方法 |
| CN100467141C (zh) | 2003-04-25 | 2009-03-11 | 株式会社半导体能源研究所 | 图形的制作方法和液滴排出装置 |
| US7202155B2 (en) | 2003-08-15 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing wiring and method for manufacturing semiconductor device |
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| US7226819B2 (en) | 2003-10-28 | 2007-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Methods for forming wiring and manufacturing thin film transistor and droplet discharging method |
| WO2005041311A1 (en) | 2003-10-28 | 2005-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same, and liquid crystal television reciever |
| JP4754848B2 (ja) * | 2004-03-03 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7462514B2 (en) | 2004-03-03 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television |
| US7247529B2 (en) * | 2004-08-30 | 2007-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| JP2008515654A (ja) * | 2004-10-12 | 2008-05-15 | ナノシス・インク. | 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス |
| US7651932B2 (en) | 2005-05-31 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing antenna and method for manufacturing semiconductor device |
| US7542301B1 (en) * | 2005-06-22 | 2009-06-02 | Alien Technology Corporation | Creating recessed regions in a substrate and assemblies having such recessed regions |
| JP2007019014A (ja) * | 2005-07-06 | 2007-01-25 | Samsung Sdi Co Ltd | 平板表示装置及びその製造方法 |
| US8048473B2 (en) | 2006-07-04 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| TWI427682B (zh) | 2006-07-04 | 2014-02-21 | 半導體能源研究所股份有限公司 | 顯示裝置的製造方法 |
| TWI412079B (zh) | 2006-07-28 | 2013-10-11 | Semiconductor Energy Lab | 製造顯示裝置的方法 |
| US7994021B2 (en) | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US7943287B2 (en) | 2006-07-28 | 2011-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US7651896B2 (en) | 2006-08-30 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8148259B2 (en) | 2006-08-30 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4621791B2 (ja) * | 2009-06-11 | 2011-01-26 | シャープ株式会社 | 窒化物半導体レーザ素子 |
-
2007
- 2007-08-10 KR KR1020097003253A patent/KR101346246B1/ko not_active Expired - Fee Related
- 2007-08-10 WO PCT/JP2007/065990 patent/WO2008023630A1/en not_active Ceased
- 2007-08-16 US US11/840,043 patent/US7727847B2/en not_active Expired - Fee Related
- 2007-08-22 JP JP2007215391A patent/JP5268304B2/ja not_active Expired - Fee Related
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