JP2008166738A5 - - Google Patents

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Publication number
JP2008166738A5
JP2008166738A5 JP2007306733A JP2007306733A JP2008166738A5 JP 2008166738 A5 JP2008166738 A5 JP 2008166738A5 JP 2007306733 A JP2007306733 A JP 2007306733A JP 2007306733 A JP2007306733 A JP 2007306733A JP 2008166738 A5 JP2008166738 A5 JP 2008166738A5
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JP
Japan
Prior art keywords
semiconductor film
film
manufacturing
substrate
semiconductor device
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Application number
JP2007306733A
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English (en)
Japanese (ja)
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JP2008166738A (ja
JP5264017B2 (ja
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Priority to JP2007306733A priority Critical patent/JP5264017B2/ja
Priority claimed from JP2007306733A external-priority patent/JP5264017B2/ja
Publication of JP2008166738A publication Critical patent/JP2008166738A/ja
Publication of JP2008166738A5 publication Critical patent/JP2008166738A5/ja
Application granted granted Critical
Publication of JP5264017B2 publication Critical patent/JP5264017B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007306733A 2006-12-04 2007-11-28 半導体装置の作製方法 Expired - Fee Related JP5264017B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007306733A JP5264017B2 (ja) 2006-12-04 2007-11-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006327584 2006-12-04
JP2006327584 2006-12-04
JP2007306733A JP5264017B2 (ja) 2006-12-04 2007-11-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008166738A JP2008166738A (ja) 2008-07-17
JP2008166738A5 true JP2008166738A5 (enExample) 2010-10-21
JP5264017B2 JP5264017B2 (ja) 2013-08-14

Family

ID=39476155

Family Applications (1)

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JP2007306733A Expired - Fee Related JP5264017B2 (ja) 2006-12-04 2007-11-28 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US8338278B2 (enExample)
JP (1) JP5264017B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010272612A (ja) * 2009-05-20 2010-12-02 Sony Corp 固体撮像装置とその製造方法および撮像装置
KR20250150667A (ko) 2010-02-26 2025-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101708180B1 (ko) 2010-08-25 2017-02-21 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법
CN102956713B (zh) 2012-10-19 2016-03-09 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置
CN102969250B (zh) * 2012-11-22 2015-08-19 京东方科技集团股份有限公司 Ltps薄膜及薄膜晶体管的制备方法,阵列基板及显示装置
US12156342B2 (en) * 2022-08-17 2024-11-26 Aptiv Technologies AG Systems and methods for shaping flexible circuits to improve routing and attachment
WO2025239921A1 (en) * 2024-05-17 2025-11-20 SanDisk Technologies, Inc. Semiconductor device including laser beam absorption enhancement structures and methods for forming the same

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145316A (en) * 1981-03-04 1982-09-08 Toshiba Corp Manufacture of semicondcutor device
US5753542A (en) 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
JPS62160712A (ja) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6477112A (en) * 1987-09-18 1989-03-23 Fujitsu Ltd Manufacture of semiconductor device
JPH01258413A (ja) * 1988-04-08 1989-10-16 Hitachi Ltd 半導体装置の製造方法
JPH03286520A (ja) * 1990-04-02 1991-12-17 Seiko Epson Corp 結晶性半導体薄膜の製造方法
JP3917205B2 (ja) 1995-11-30 2007-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3476320B2 (ja) 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
JP3516424B2 (ja) * 1996-03-10 2004-04-05 株式会社半導体エネルギー研究所 薄膜半導体装置
JP4601731B2 (ja) 1997-08-26 2010-12-22 株式会社半導体エネルギー研究所 半導体装置、半導体装置を有する電子機器及び半導体装置の作製方法
JP2001272505A (ja) 2000-03-24 2001-10-05 Japan Science & Technology Corp 表面処理方法
US6489222B2 (en) 2000-06-02 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6746942B2 (en) * 2000-09-05 2004-06-08 Sony Corporation Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
JP2003168646A (ja) 2001-12-04 2003-06-13 Sanyo Electric Co Ltd 半導体装置の製造方法
US6767799B2 (en) * 2001-12-28 2004-07-27 Semiconductor Energy Laboratory Co., Ltd. Laser beam irradiation method
JP4197100B2 (ja) 2002-02-20 2008-12-17 大日本印刷株式会社 反射防止物品
JP4338988B2 (ja) * 2002-02-22 2009-10-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3773865B2 (ja) 2002-03-06 2006-05-10 三洋電機株式会社 導光板および表示装置
JP2003279705A (ja) 2002-03-25 2003-10-02 Sanyo Electric Co Ltd 反射防止部材
JP3910926B2 (ja) 2003-02-26 2007-04-25 株式会社東芝 表示装置用透明基板の製造方法
JP4289018B2 (ja) * 2003-05-19 2009-07-01 日立電線株式会社 太陽光発電素子の製造方法
JP4289017B2 (ja) 2003-05-19 2009-07-01 日立電線株式会社 結晶シリコン薄膜の製造方法
JP4165305B2 (ja) 2003-06-10 2008-10-15 ソニー株式会社 結晶質半導体材料の製造方法および半導体装置の製造方法
JP5159021B2 (ja) 2003-12-02 2013-03-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI372463B (en) 2003-12-02 2012-09-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
JP4552447B2 (ja) 2004-02-09 2010-09-29 株式会社日立製作所 前面板およびそれを用いた表示装置
JP2006171229A (ja) 2004-12-14 2006-06-29 Matsushita Electric Ind Co Ltd 無反射構造及び無反射構造を有する光学素子、ならびにその製造方法及びその製造方法に用いるマスク
WO2007046290A1 (en) 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8278739B2 (en) 2006-03-20 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof
TWI438823B (zh) 2006-08-31 2014-05-21 Semiconductor Energy Lab 晶體半導體膜的製造方法和半導體裝置
US7662703B2 (en) 2006-08-31 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and semiconductor device

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