TWI456338B - 反射式光罩 - Google Patents
反射式光罩 Download PDFInfo
- Publication number
- TWI456338B TWI456338B TW102118191A TW102118191A TWI456338B TW I456338 B TWI456338 B TW I456338B TW 102118191 A TW102118191 A TW 102118191A TW 102118191 A TW102118191 A TW 102118191A TW I456338 B TWI456338 B TW I456338B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- reflective
- reticle
- interposer
- patterned
- Prior art date
Links
- 238000005253 cladding Methods 0.000 claims 8
- 229910000420 cerium oxide Inorganic materials 0.000 claims 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 4
- 239000006096 absorbing agent Substances 0.000 claims 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 4
- 239000011733 molybdenum Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 4
- 238000010521 absorption reaction Methods 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Claims (19)
- 一種反射式光罩，包含：一基板，包含一第一表面和一第二表面，其中該第一表面與該第二表面是相對；一第一反射複層，形成於該第一表面上；一第二反射複層，形成於該第二表面上；一第一圖案化吸收層，形成於該第一反射複層上；以及一第二圖案化吸收層，形成於該第二反射複層上。
- 根據申請專利範圍第1項所述之反射式光罩，其中該第一圖案化吸收層和該第二圖案化吸收層具有相同的圖案。
- 根據申請專利範圍第1項所述之反射式光罩，其中該第一圖案化吸收層和該第二圖案化吸收層具有不同的圖案。
- 根據申請專利範圍第1項所述之反射式光罩，更包含一第一導電層及一第二導電層，其中該第一導電層形成於該第一表面，而該第二導電層形成於該第二表面。
- 根據申請專利範圍第1項所述之反射式光罩，更包含一第一蓋層及一第二蓋層，其中該第一蓋層形成於該第一圖案化吸收層與該第一反射複層之間，而該第二蓋層形成於該第二圖案化吸收層與該第二反射複層之間。
- 根據申請專利範圍第5項所述之反射式光罩，更包含一第一中介層及一第二中介層，其中該第一中介層形成於該第一蓋層與該第一圖案化吸收層之間，而該第二中介層形成於該第二蓋層與該第二圖案化吸收層之間。
- 根據申請專利範圍第6項所述之反射式光罩，其中該第一 中介層或該第二中介層包含二氧化矽。
- 根據申請專利範圍第5項所述之反射式光罩，其中該第一蓋層或該第二蓋層包含碳、碳化矽、矽、釕或氮化矽。
- 根據申請專利範圍第1項所述之反射式光罩，其中該基板包含熔氧化矽或摻雜鈦和錫之熔氧化矽。
- 根據申請專利範圍第1項所述之反射式光罩，其中該第一反射複層或該第二反射複層包含鉬和矽；或者該第一反射複層或該第二反射複層包含鉬和鈹。
- 根據申請專利範圍第1項所述之反射式光罩，其中該第一圖案化吸收層或該第二圖案化吸收層包含金屬、合金或鉭基材料。
- 一種光罩結構，包含：一基板，包含一第一表面和一第二表面，其中該第一表面與該第二表面是相對；一第一反射複層，形成於該第一表面上；一第二反射複層，形成於該第二表面上；一第一蓋層，形成於該第一反射複層上；一第二蓋層，形成於該第二反射複層上；一第一吸收層，形成於該第一蓋層上；以及一第二吸收層，形成於該第二蓋層上。
- 根據申請專利範圍第12項所述之光罩結構，更包含一第一導電層及一第二導電層，其中該第一導電層形成於該第一表面，而該第二導電層形成於該第二表面。
- 根據申請專利範圍第12項所述之光罩結構，更包含一第 一中介層及一第二中介層，其中該第一中介層形成於該第一蓋層與該第一吸收層之間，而該第二中介層形成於該第二蓋層與該第二吸收層之間。
- 根據申請專利範圍第14項所述之光罩結構，其中該第一中介層或該第二中介層包含二氧化矽。
- 根據申請專利範圍第12項所述之光罩結構，其中該第一蓋層或該第二蓋層包含碳、碳化矽、矽、釕或氮化矽。
- 根據申請專利範圍第12項所述之光罩結構，其中該基板包含熔氧化矽或摻雜鈦和錫之熔氧化矽。
- 根據申請專利範圍第12項所述之光罩結構，其中該第一反射複層或該第二反射複層包含鉬和矽；或者該第一反射複層或該第二反射複層包含鉬和鈹。
- 根據申請專利範圍第12項所述之光罩結構，其中該第一吸收層或該第二吸收層包含金屬、合金或鉭基材料。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/487,937 US8658333B2 (en) | 2012-06-04 | 2012-06-04 | Reflective mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201351027A TW201351027A (zh) | 2013-12-16 |
| TWI456338B true TWI456338B (zh) | 2014-10-11 |
Family
ID=49670638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102118191A TWI456338B (zh) | 2012-06-04 | 2013-05-23 | 反射式光罩 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8658333B2 (zh) |
| CN (1) | CN103454849B (zh) |
| TW (1) | TWI456338B (zh) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9069253B2 (en) * | 2013-03-13 | 2015-06-30 | Nanya Technology Corportion | Mask structure |
| US9897910B2 (en) | 2014-12-24 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Treating a capping layer of a mask |
| US9535317B2 (en) * | 2014-12-24 | 2017-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Treating a capping layer of a mask |
| DE102015108569B4 (de) * | 2015-05-29 | 2020-10-08 | Advanced Mask Technology Center Gmbh & Co. Kg | Reflektierende Fotomaske und Reflexionstyp-Maskenrohling |
| US9791771B2 (en) * | 2016-02-11 | 2017-10-17 | Globalfoundries Inc. | Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure |
| US10061191B2 (en) | 2016-06-01 | 2018-08-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | High durability extreme ultraviolet photomask |
| TWI774375B (zh) * | 2016-07-27 | 2022-08-11 | 美商應用材料股份有限公司 | 具多層吸收劑的極紫外遮罩坯料及製造方法 |
| TWI821984B (zh) * | 2016-07-27 | 2023-11-11 | 美商應用材料股份有限公司 | 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法 |
| US11275300B2 (en) * | 2018-07-06 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask blank defect reduction |
| TW202008073A (zh) * | 2018-07-19 | 2020-02-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
| US11448955B2 (en) * | 2018-09-27 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask for lithography process and method for manufacturing the same |
| TW202026770A (zh) | 2018-10-26 | 2020-07-16 | 美商應用材料股份有限公司 | 用於極紫外線掩模吸收劑的ta-cu合金材料 |
| TW202028495A (zh) | 2018-12-21 | 2020-08-01 | 美商應用材料股份有限公司 | 極紫外線遮罩吸收器及用於製造的方法 |
| DE102019100839A1 (de) * | 2019-01-14 | 2020-07-16 | Advanced Mask Technology Center Gmbh & Co. Kg | Fotomaskenanordnung mit reflektierender fotomaske und verfahren zum herstellen einer reflektierenden fotomaske |
| TW202035792A (zh) | 2019-01-31 | 2020-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收體材料 |
| US11249390B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| TWI828843B (zh) | 2019-01-31 | 2024-01-11 | 美商應用材料股份有限公司 | 極紫外線（ｅｕｖ）遮罩素材及其製造方法 |
| TW202043905A (zh) | 2019-03-01 | 2020-12-01 | 美商應用材料股份有限公司 | 物理氣相沉積系統與處理 |
| TWI818151B (zh) | 2019-03-01 | 2023-10-11 | 美商應用材料股份有限公司 | 物理氣相沉積腔室及其操作方法 |
| TW202037742A (zh) | 2019-03-01 | 2020-10-16 | 美商應用材料股份有限公司 | 物理氣相沉積系統與處理 |
| TW202104957A (zh) | 2019-04-19 | 2021-02-01 | 美商應用材料股份有限公司 | 布拉格反射器中的梯度界面 |
| TW202104666A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
| US11275303B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber matertals |
| TW202111420A (zh) | 2019-05-22 | 2021-03-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
| TW202104667A (zh) | 2019-05-22 | 2021-02-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
| US11366379B2 (en) | 2019-05-22 | 2022-06-21 | Applied Materials Inc. | Extreme ultraviolet mask with embedded absorber layer |
| US11385536B2 (en) | 2019-08-08 | 2022-07-12 | Applied Materials, Inc. | EUV mask blanks and methods of manufacture |
| US11630385B2 (en) | 2020-01-24 | 2023-04-18 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| TW202129401A (zh) | 2020-01-27 | 2021-08-01 | 美商應用材料股份有限公司 | 極紫外線遮罩坯體硬遮罩材料 |
| TW202131087A (zh) | 2020-01-27 | 2021-08-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
| TWI817073B (zh) | 2020-01-27 | 2023-10-01 | 美商應用材料股份有限公司 | 極紫外光遮罩坯體硬遮罩材料 |
| TW202141165A (zh) | 2020-03-27 | 2021-11-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
| US11644741B2 (en) | 2020-04-17 | 2023-05-09 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11300871B2 (en) | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| TW202202641A (zh) | 2020-07-13 | 2022-01-16 | 美商應用材料股份有限公司 | 極紫外線遮罩吸收劑材料 |
| US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11513437B2 (en) | 2021-01-11 | 2022-11-29 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11592738B2 (en) | 2021-01-28 | 2023-02-28 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
| US11815803B2 (en) | 2021-08-30 | 2023-11-14 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflector materials |
| US11782337B2 (en) | 2021-09-09 | 2023-10-10 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflectors |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272744A (en) * | 1991-08-22 | 1993-12-21 | Hitachi, Ltd. | Reflection mask |
| US20040091789A1 (en) * | 2002-11-08 | 2004-05-13 | Han Sang-In | Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same |
| TW200628969A (en) * | 2004-08-06 | 2006-08-16 | Schott Ag | Method of producing a mask blank for photolithographic applications, and mask blank |
| TWI298817B (zh) * | 2005-09-30 | 2008-07-11 | Crowningtek Inc | |
| US20090233188A1 (en) * | 2008-03-11 | 2009-09-17 | Tsuyoshi Amano | Reflective mask blank, reflective mask, method of inspecting reflective mask, and method for manufacturing the same |
| TWI329887B (en) * | 2003-03-03 | 2010-09-01 | Freescale Semiconductor Inc | A method of patterning photoresist on a wafer using a reflective mask with a multi-layer arc |
| TW201128300A (en) * | 2009-12-04 | 2011-08-16 | Asahi Glass Co Ltd | Optical member for euv lithography, and process for production of reflective-layer-attached substrate for euv lithography |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6593041B2 (en) * | 2001-07-31 | 2003-07-15 | Intel Corporation | Damascene extreme ultraviolet lithography (EUVL) photomask and method of making |
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| FR2894690B1 (fr) * | 2005-12-13 | 2008-02-15 | Commissariat Energie Atomique | Masque de lithographie en reflexion et procede de fabrication du masque |
| DE102008013073B4 (de) * | 2008-03-06 | 2011-02-03 | Leonhard Kurz Stiftung & Co. Kg | Verfahren zur Herstellung eines Folienelements und Folienelement |
| KR101020281B1 (ko) * | 2008-06-20 | 2011-03-07 | 주식회사 하이닉스반도체 | 극자외선 리소그라피 마스크의 제조 방법 |
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2012
- 2012-06-04 US US13/487,937 patent/US8658333B2/en active Active
-
2013
- 2013-05-23 TW TW102118191A patent/TWI456338B/zh active
- 2013-06-04 CN CN201310218892.8A patent/CN103454849B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272744A (en) * | 1991-08-22 | 1993-12-21 | Hitachi, Ltd. | Reflection mask |
| US20040091789A1 (en) * | 2002-11-08 | 2004-05-13 | Han Sang-In | Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same |
| TWI329887B (en) * | 2003-03-03 | 2010-09-01 | Freescale Semiconductor Inc | A method of patterning photoresist on a wafer using a reflective mask with a multi-layer arc |
| TW200628969A (en) * | 2004-08-06 | 2006-08-16 | Schott Ag | Method of producing a mask blank for photolithographic applications, and mask blank |
| TWI298817B (zh) * | 2005-09-30 | 2008-07-11 | Crowningtek Inc | |
| US20090233188A1 (en) * | 2008-03-11 | 2009-09-17 | Tsuyoshi Amano | Reflective mask blank, reflective mask, method of inspecting reflective mask, and method for manufacturing the same |
| TW201128300A (en) * | 2009-12-04 | 2011-08-16 | Asahi Glass Co Ltd | Optical member for euv lithography, and process for production of reflective-layer-attached substrate for euv lithography |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201351027A (zh) | 2013-12-16 |
| CN103454849A (zh) | 2013-12-18 |
| US8658333B2 (en) | 2014-02-25 |
| CN103454849B (zh) | 2015-09-30 |
| US20130323626A1 (en) | 2013-12-05 |
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