JP2007534174A - 低k誘電体膜の後処理 - Google Patents
低k誘電体膜の後処理 Download PDFInfo
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- JP2007534174A JP2007534174A JP2007509459A JP2007509459A JP2007534174A JP 2007534174 A JP2007534174 A JP 2007534174A JP 2007509459 A JP2007509459 A JP 2007509459A JP 2007509459 A JP2007509459 A JP 2007509459A JP 2007534174 A JP2007534174 A JP 2007534174A
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- Prior art keywords
- dielectric constant
- low dielectric
- constant film
- post
- film
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- 238000010894 electron beam technology Methods 0.000 claims abstract description 33
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- 239000001307 helium Substances 0.000 description 5
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
【解決手段】後処理には、低誘電率膜を所望の高温まで急速に加熱し、その所望の高温に膜が露出される時間が約5秒以内になるように急速に冷却することを含む。一態様において、後処理は低誘電率膜を電子ビーム処理及び/又は紫外線処理に露出することも含む。
Description
低誘電率膜の堆積
低誘電率膜の誘電率は約4未満であり、ケイ素、炭素及び好ましくは酸素を含む。低誘電率膜は1つ以上の有機ケイ素化合物を含む混合物から、RFパワーの存在下で堆積される。低誘電率層を堆積するために使用する1以上の有機ケイ素化合物はオルガノシラン、オルガノシロキサン又はその組み合わせであってもよい。ここで使用の「有機ケイ素化合物」という用語は有機基に炭素原子を含む化合物を示すものとし、環式化合物又は直鎖化合物である。有機基には、その官能基誘導体に加えてアルキル、アルケニル、シクロヘキセニル、アリール基が含まれる。有機ケイ素化合物は、適切な処理条件下において酸化によって炭素原子がすぐに除去されないようにケイ素原子に結合させた1つ以上の炭素原子を含むことが好ましい。また、有機ケイ素化合物は好ましくは1つ以上の酸素原子を含む。
1,3,5−トリシラノ−2,4,6−トリメチレン、-(-SiH2CH2-)3-(環式)
1,3,5,7−テトラメチルシクロテトラシロキサン (TMCTS) 、
-(-SiHCH3O-)4-(環式)
オクタメチルシクロテトラシロキサン(OMCTS)、-(-Si(CH3)2-O-)4-(環式)
1,3,5,7,9−ペンタメチルシクロペンタシロキサン、
-(-SiHCH3-O-)5-(環式)
1,3,5,7−テトラシラノ−2,6−ジオキシ−4,8−ジメチレン、
-(-SiH2-CH2-SiH2-O-)2-(環式)
ヘキサメチルシクロトリシロキサン、-(-Si(CH3)2-O-)3-(環式)
メチルシラン、CH3-SiH3
ジメチルシラン、(CH3)2-SiH2
トリメチルシラン、(CH3)3-SiH
エチルシラン、CH3-CH2-SiH3
ジシラノメタン、SiH3-CH2-SiH3
ビス(メチルシラノ)メタン、CH3-SiH2-CH2-SiH2-CH3
1,2−ジシラノエタン、SiH3-CH2-CH2-SiH3
1,2−ビス(メチルシラノ)エタン、CH3-SiH2-CH2-CH2-SiH2-CH3
2,2−ジシラノプロパン、SiH3-C(CH3)2-SiH3
ジエチルシラン、(C2H5)2-SiH2
プロピルシラン、C3H7-SiH3
ビニルメチルシラン、(CH2=CH)-SiH2-CH3
1,1,2,2−テトラメチルジシラン、(CH3)2-SiH-SiH-(CH3)2
ヘキサメチルジシラン、(CH3)3-Si-Si-(CH3)3
1,1,2,2,3,3−ヘキサメチルトリシラン、(CH3)2-SiH-Si(CH3)2-SiH-(CH3)2
1,1,2,3,3−ペンタメチルトリシラン、(CH3)2-SiH-SiH(CH3)-SiH-(CH3)2
1,3−ビス(メチルシラノ)プロパン、CH3-SiH2-(CH2)3-SiH2-CH3
1,2−ビス(ジメチルシラノ)エタン、(CH3)2-SiH-(CH2)2-SiH-(CH3)2
1,3−ビス(ジメチルシラノ)プロパン、(CH3)2-SiH-(CH2)3-SiH-(CH3)2
ジエトキシメチルシラン(DEMS)、CH3-SiH-(O-CH2-CH3)2
1,3−ジメチルジシロキサン、CH3-SiH2-O-SiH2-CH3
1,1,3,3−テトラメチルジシロキサン、(CH3)2-SiH-O-SiH-(CH3)2
ヘキサメチルジシロキサン(HMDS)、(CH3)3-Si-O-Si-(CH3)3
1,3−ビス(シラノメチレン)ジシロキサン、(SiH3-CH2-SiH2-)2-O
ビス(1−メチルジシロキサニル)メタン、(CH3-SiH2-O-SiH2-)2-CH2
2,2−ビス(1−メチルジシロキサニル)プロパン、(CH3-SiH2-O-SiH2-)2-C(CH3)2
ジメチルジメトキシシラン(DMDMOS)、(CH3O)2-Si-(CH3)2
フェニルジメトキシシラン、C6H5-SiH-(O-CH3)2
ジフェニルメチルシラン、(C6H5)2-SiH-CH3
ジメチルフェニルシラン、(CH3)2-SiH-C6H5
ジメトキシメチルビニルシラン(DMMVS)、(CH3O)2-Si(CH3)-CH2=CH3
低誘電率膜を堆積した後、低誘電率膜を所望の高温まで急速に加熱し、その後急速に冷却することとを含む工程によって後処理する。所望の高温とは約600℃〜約1000℃、例えば約800℃であってもよい。好ましくは、低誘電率膜は約25℃〜約250℃からその所望の高温まで少なくとも約10℃/秒の速度で加熱される。例えば、低誘電率膜は約10℃/秒〜約300℃/秒の速度で加熱する。好ましくは、低誘電率膜は約100℃/秒〜約300℃/秒、例えば約250℃/秒で加熱する。低誘電率膜が所望の温度に達したら、低誘電率膜を加熱するのに使用した熱源の電源を切り、低誘電率膜を少なくとも約10℃/秒、例えば約10℃/秒〜約100℃/秒の速度で冷却する。低誘電率膜の冷却を、後処理チャンバの反射板によって強化してもよい。好ましくは、冷却速度は後処理チャンバの反射板の存在と、低誘電率膜を堆積する基板の裏面側をヘリウム等の不活性ガス流に露出することの双方によって促進される。例えば、基板の裏側をヘリウムガス流に速度約10sccm〜約500sccmで露出する。低誘電率膜を急速に加熱し急速に冷却するため、低誘電率膜の加熱開始と冷却終了との間の時間は典型的には約0.5分〜約5分である。
ケイ素、炭素、酸素を含む低誘電率膜を、OMCTS、トリメチルシラン、エチレンを含むガス混合物から基板上に堆積した。OMCTSは流速520sccm、トリメチルシランは流速300sccm、エチレンは流速2200sccmでチャンバに導入した。ヘリウムは流速1000sccm、酸素は流速1000sccmでチャンバに導入した。膜は400℃、圧力5.7Torrで13.56MHz、800W RFパワーを用いて20秒間堆積された。堆積後、低誘電率膜の厚さは5.043Å、誘電率(k)は2.77、硬度は0.59gPaであった。
低誘電率膜を比較例1に記載したように基板上に堆積した。低誘電率膜は、800℃で1分間、熱アニール処理することで後処理した。堆積後、低誘電率膜の厚さは5085Åであった。後処理後、低誘電率膜の厚さは4463Åであった(収縮率12.2%)。後処理後、低誘電率膜の誘電率(k)は3.35、硬度は1.82gPaであった。
低誘電率膜を比較例1に記載したように基板上に堆積した。低誘電率膜は、電流3mA、線量100μc/cm2の電子ビーム処理で4.5kV、400℃で後処理された。堆積後、低誘電率膜の厚さは5074Åであった。後処理後、低誘電率膜の厚さは4763Åであった(収縮率6.1%)。後処理後、低誘電率膜の誘電率(k)は2.74、硬度は1.14gPaであった。
低誘電率膜を比較例1に記載したように基板上に堆積した。低誘電率膜を、室温から800℃まで急速に加熱し、その後120℃まで急速に冷却することでラディアンス(Radiance、商標名)RTPチャンバ内で後処理した。膜の加熱及び冷却は30秒以内になるように行われた。堆積後、低誘電率膜の厚さは5036Åであった。後処理後、低誘電率膜の厚さは5021Åであった(収縮率0.3%)。後処理後、低誘電率膜の誘電率(k)は2.53、硬度は0.62gPaであった。
低誘電率膜を比較例1に記載したように基板上に堆積した。低誘電率膜を、室温から800℃まで急速に加熱し、その後すぐに120℃まで冷却することでラディアンス(Radiance、商標名)RTPチャンバ内で後処理した。膜の加熱及び冷却は30秒以内になるように行われた。堆積後、低誘電率膜の厚さは5011Åであった。後処理後、低誘電率膜の厚さは4996Åであった(収縮率0.3%)。後処理後、低誘電率膜の誘電率(k)は2.44であった。
Claims (20)
- ケイ素と炭素を含む低誘電率膜をRFパワーの存在下で基板上に堆積し、
堆積させた低誘電率膜を、少なくとも約600℃の所望の温度に少なくとも約10℃/秒の速度で加熱し、この所望の温度で低誘電率膜を維持する時間は約5秒以下であり、低誘電率膜を少なくとも約10℃/秒の速度で冷却することを含む工程によって後処理することとを含む基板の処理方法。 - 後処理が低誘電率膜の誘電率を低下させるに十分な条件下で行われる請求項1記載の方法。
- 低誘電率膜が約10℃/秒〜約300℃/秒で加熱され、約10℃/秒〜約100℃/秒で冷却される請求項1記載の方法。
- 後処理が低誘電率膜を紫外線で処理することを更に含む請求項1記載の方法。
- 低誘電率膜の加熱と冷却を含む工程が、低誘電率膜の紫外線処理と同時に行われる請求項4記載の方法。
- 後処理が低誘電率膜を電子ビームで処理することを更に含む請求項5記載の方法。
- 加熱と電子ビーム処理との間で低誘電率膜が大気に露出されることがないように、低誘電率膜の後処理を集積処理システム内で行う請求項6記載の方法。
- 低誘電率膜の加熱及び冷却を含む工程と低誘電率膜の紫外線処理とを連続して行う請求項4記載の方法。
- 後処理が低誘電率膜を電子ビームで処理することを更に含む請求項1記載の方法。
- 加熱と電子ビーム処理との間で低誘電率膜が大気に露出されることがないように、低誘電率膜の後処理を集積処理システム内で行う請求項9記載の方法。
- 低誘電率膜が更に酸素を含む請求項1記載の方法。
- ケイ素と炭素を含む低誘電率膜をRFパワーの存在下で基板上に堆積し、
堆積された低誘電率膜を約25℃〜約250℃から約600℃〜約1000℃まで加熱し、約600℃〜約1000℃のその温度で低誘電率膜が加熱される時間は約5秒以下であり、約600℃〜約1000℃から低誘電率膜を冷却し、低誘電率膜の加熱及び冷却は約0.5分〜約5分以内で行われることを含む工程によって後処理することとを含む基板の処理方法。 - 低誘電率膜は約10℃/秒〜約300℃/秒で加熱され、約10℃/秒〜約100℃/秒で冷却される請求項12記載の方法。
- 後処理が低誘電率膜を紫外線で処理することを更に含む請求項12記載の方法。
- 後処理が低誘電率膜を電子ビームで処理することを更に含む請求項12記載の方法。
- 低誘電率膜の冷却が基板をバックサイドガスに露出することを含む請求項12記載の方法。
- ケイ素と炭素を含む低誘電率膜をRFパワーの存在下で基板上に堆積し、
堆積された低誘電率膜を所望の温度まで少なくとも約10℃/秒の速度で加熱し、この所望の温度で低誘電率膜を維持する時間は約5秒以下であり、低誘電率膜を少なくとも約10℃/秒で冷却し、低誘電率膜の加熱及び冷却は約0.5分〜約5分以内で行われることを含む工程によって後処理することとを含む基板の処理方法。 - 低誘電率膜を約25℃〜約250℃から加熱し、所望の温度が約800℃〜約900℃である請求項17記載の方法。
- 後処理が低誘電率膜を紫外線で処理することを更に含む請求項17記載の方法。
- 後処理が低誘電率膜を電子ビームで処理することを更に含む請求項17記載の方法。
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Also Published As
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KR20070004975A (ko) | 2007-01-09 |
TWI374498B (en) | 2012-10-11 |
US7018941B2 (en) | 2006-03-28 |
US20050239293A1 (en) | 2005-10-27 |
CN1947229A (zh) | 2007-04-11 |
KR101046530B1 (ko) | 2011-07-04 |
TW200536018A (en) | 2005-11-01 |
JP4769344B2 (ja) | 2011-09-07 |
WO2005109484A1 (en) | 2005-11-17 |
CN100472733C (zh) | 2009-03-25 |
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