JP2009519612A - 低誘電率膜のアッシング/ウエットエッチング損傷抵抗と組込み安定性を改善する方法 - Google Patents
低誘電率膜のアッシング/ウエットエッチング損傷抵抗と組込み安定性を改善する方法 Download PDFInfo
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- JP2009519612A JP2009519612A JP2008545924A JP2008545924A JP2009519612A JP 2009519612 A JP2009519612 A JP 2009519612A JP 2008545924 A JP2008545924 A JP 2008545924A JP 2008545924 A JP2008545924 A JP 2008545924A JP 2009519612 A JP2009519612 A JP 2009519612A
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- organosilicon compound
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- 238000004380 ashing Methods 0.000 title description 3
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- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims description 36
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- YHQGMYUVUMAZJR-UHFFFAOYSA-N α-terpinene Chemical compound CC(C)C1=CC=C(C)CC1 YHQGMYUVUMAZJR-UHFFFAOYSA-N 0.000 claims description 26
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 23
- 238000010894 electron beam technology Methods 0.000 claims description 15
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Abstract
【選択図】 図1
Description
[0001]本発明の実施形態は、一般的には、集積回路の製造に関する。より具体的には、本発明の実施形態は、基板上に低誘電率膜を堆積するためのプロセスに関する。
[0002]集積回路の形は、このようなデバイスが数十年前に最初に導入されて以来、サイズが劇的に減少した。それ以来、集積回路は、一般的に、二年で半分のサイズのルール(しばしばムーアの法則と呼ばれる)に従い、それはチップ上のデバイスの数が二年毎に二倍になることを意味する。今日の製造設備は、規定通りに、0.13μm、0.1μmさえもの特徴部サイズを有するデバイスを製造し、未来の設備は、まもなく更に小さな特徴部サイズを有するデバイスを製造するであろう。
[0031]低誘電率膜を、約7.5トールと約260℃の温度で基板上に堆積させせた。以下の処理ガスと流量を用いた:
ATP、2900mgmで;
TMS、62sccmで;
mDEOS、1044mgm(=186sccm)で;
酸素、200sccmで。
Claims (20)
- 低誘電率膜を堆積させる方法であって:
第一有機シリコン化合物を第一流量でチャンバへ導入するステップであって、該第一有機シリコン化合物がSi原子あたり平均一つ以上のSi-C結合を有する、前記ステップと;
第二有機シリコン化合物を第二流量で該チャンバへ導入するステップであって、該第二有機シリコン化合物のSi原子あたりのSi-C結合の平均数が、該第一有機シリコン化合物におけるSi原子あたりのSi-C結合の平均数より大きく、且つ該第一流量と該第二流量の合計で割った該第二流量が約5%〜約50%である、前記ステップと;
該第一有機シリコン化合物と該第二有機シリコン化合物をRF電力の存在下に反応させて、該チャンバ内で基板上に低誘電率膜を堆積させるステップと;
を含む、前記方法。 - 該第一有機シリコン化合物が、Si-H結合を含む、請求項1に記載の方法。
- 該第一有機シリコン化合物が、少なくとも一つのSi-O結合と、Si-C結合と、Si-H結合とを含む、請求項1に記載の方法。
- 該第一有機シリコン化合物が、二つのSi-O結合を含む、請求項3に記載の方法。
- 該第二有機シリコン化合物が、酸素を含む、請求項1に記載の方法。
- 該第二有機シリコン化合物が、ジメチルシラン、トリメチルシラン、テトラメチルシラン、(C6H5)ySiH4-y、ここで、yは2-4である、(CH2=CH)zSiH4-z、ここで、zは2-4である、1,1,3,3-テトラメチルジシロキサン、ヘキサメチルジシロキサン、ヘキサメチルトリシロキサン、オクタメチルシクロテトラシロキサン、デカメチルペンタシロキサン、ジメチルジエトキシシラン、メチルフェニルジエトキシシラン、CF3-Si-(CH3)3、及びそれらの部分的にフッ素化された炭素誘導体からなる群より選ばれる、請求項1に記載の方法。
- 酸化ガスを該チャンバへ導入するステップを更に含む、請求項1に記載の方法。
- 該低誘電率膜をUV、電子ビーム、熱後処理、又はそれらの組合わせで後処理するステップを更に含む、請求項1に記載の方法。
- 低誘電率膜を堆積させる方法であって:
第一有機シリコン化合物を第一流量でチャンバへ導入するステップであって、該第一有機シリコン化合物がSi原子あたり平均一つ以上のSi-C結合を有する、前記ステップと;
第二有機シリコン化合物を第二流量で該チャンバへ導入するステップであって、該第二有機シリコン化合物のSi原子あたりのSi-C結合の平均数が、該第一有機シリコン化合物におけるSi原子あたりのSi-C結合の該平均数より大きく、且つ該第一流量と該第二流量の合計で割った該第二流量が約5%〜約50%である、前記ステップと;
熱に不安定な化合物を該チャンバへ導入するステップと;
該第一有機シリコン化合物と、該第二有機シリコン化合物と、該熱に不安定な化合物とをRF電力の存在下に反応させて、該チャンバ内で基板上に低誘電率膜を堆積させる、前記ステップと;
を含む、前記方法。 - 酸化ガスを該チャンバへ導入するステップを更に含む、請求項9に記載の方法。
- 該熱に不安定な化合物が炭化水素である、請求項9に記載の方法。
- 該炭化水素が、環状炭化水素である、請求項11に記載の方法。
- 該環状炭化水素が、アルファ-テルピネン、ノルボルナジエン、ビニルシクロヘキサン、及び酢酸フェニルからなる群より選ばれる、請求項12に記載の方法。
- 該低誘電率膜をUV、電子ビーム、熱後処理、又はそれらの組合わせで後処理するステップを更に含む、請求項9に記載の方法。
- 該第一有機シリコン化合物が、少なくとも一つのSi-O結合と、Si-C結合と、Si-H結合とを含む、請求項9に記載の方法。
- 該第一有機シリコン化合物が、二つのSi-O結合を含む、請求項15に記載の方法。
- 低誘電率膜を堆積させる方法であって:
メチルジエトキシシランを第一流量でチャンバへ導入するステップと;
トリメチルシランを第二流量で該チャンバへ導入するステップであって、該第一流量と該第二流量の合計で割った該第二流量が約5%〜約50%である、前記ステップと;
アルファ-テルピネンを該チャンバへ導入するステップと;
該メチルジエトキシシランと、トリメチルシランと、アルファ-テルピネンとをRF電力の存在下に反応させて、該チャンバ内で基板上に低誘電率膜を堆積させる、前記ステップと;
を含む、前記方法。 - 酸化ガスを該チャンバへ導入するステップを更に含む、請求項17に記載の方法。
- 該第一流量と該第二流量の合計で割った該第二流量が、約10%〜約45%である、請求項18に記載の方法。
- 該低誘電率膜をUV、電子ビーム、熱後処理、又はそれらの組合わせを後処理するステップを更に含む、請求項17に記載の方法。
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- 2006-12-08 CN CN2006800445403A patent/CN101316945B/zh not_active Expired - Fee Related
- 2006-12-08 WO PCT/US2006/061789 patent/WO2007117320A2/en active Application Filing
- 2006-12-08 JP JP2008545924A patent/JP2009519612A/ja active Pending
- 2006-12-08 KR KR1020087017100A patent/KR20080083662A/ko not_active Application Discontinuation
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JP2005524983A (ja) * | 2002-05-08 | 2005-08-18 | アプライド マテリアルズ インコーポレイテッド | 電子ビームによって低誘電率膜を硬化する方法 |
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WO2007117320A2 (en) | 2007-10-18 |
KR20080083662A (ko) | 2008-09-18 |
US20070134435A1 (en) | 2007-06-14 |
CN101316945A (zh) | 2008-12-03 |
WO2007117320A3 (en) | 2007-12-13 |
CN101316945B (zh) | 2013-03-20 |
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