CN101316945A - 低介电常数薄膜的灰化/蚀刻损伤的抵抗性以及整体稳定性的改进方法 - Google Patents

低介电常数薄膜的灰化/蚀刻损伤的抵抗性以及整体稳定性的改进方法 Download PDF

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CN101316945A
CN101316945A CNA2006800445403A CN200680044540A CN101316945A CN 101316945 A CN101316945 A CN 101316945A CN A2006800445403 A CNA2006800445403 A CN A2006800445403A CN 200680044540 A CN200680044540 A CN 200680044540A CN 101316945 A CN101316945 A CN 101316945A
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silicoorganic compound
dielectric constant
low dielectric
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桑·H·安
亚历山德罗斯·T·迪莫斯
希姆·M·萨德
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Abstract

本发明的实施方式提供一种用于在腔室的衬底上由包括两种有机硅化合物的混合物沉积低介电常数薄膜的方法。该混合物包括碳氢化合物和氧化气体。第一有机硅化合物中每个Si原子具有一个或多个Si－C键的平均数。第二有机硅化合物中每个Si原子具有Si－C键的平均数，该平均数大于第一有机硅化合物中每个Si原子的Si－C键平均数。该低介电常数薄膜具有良好的等离子体/湿刻损伤抵抗性、良好的机械性能和期望的介电常数。

Description

低介电常数薄膜的灰化/蚀刻损伤的抵抗性以及整体稳定性的改进方法
发明背景
技术领域
本发明的实施方式主要涉及集成电路的制造。更具体地，本发明的实施方式涉及一种用于在衬底上沉积低介电常数薄膜的工艺。
背景技术
从这些器件在数十年前首次被引入以来，集成电路的几何结构在尺寸方面显著减小。从那时起，集成电路一般遵循两年/一半尺寸的原则(通常称为摩尔定律)，其意味着芯片上的器件数量每隔两年翻倍。如今的制造设备一般生产具有0.13μm并且甚至0.1μm特征尺寸，并且在不久的将来的设备将生产具有更小特征尺寸的器件。
器件几何结构的不断减小使得需求具有更小介电常数(k)值的膜，原因在于必需减小邻近金属线之间的电容耦接以进一步减小集成电路上器件的尺寸。特别地，期望具有小于约4.0的低介电常数的绝缘体。具有小介电常数的绝缘体的实施例包括旋涂玻璃、氟掺杂的硅玻璃(FSG)、碳掺杂的氧化物、多孔碳掺杂的氧化物和聚四氟乙烯(PTFE)，其都能购得。
最近，已经研发了具有小于大约3.5的k值的低介电常数有机硅薄膜。用于研发低介电常数有机硅薄膜的一种方法为：利用包含有机硅化合物和含热不稳定的物质或挥发性基团的化合物的气体混合物沉积薄膜，以及随后后处理所沉积的薄膜以从所沉积的薄膜去除热不稳定物种或挥发性基团，诸如有机基团。从所沉积的薄膜去除热不稳定物种或挥发性基团在薄膜中产生了纳米级的气孔，其降低了薄膜的介电常数，原因在于空气具有大约为1的介电常数。
如上所述虽然已经研发了具有期望的低介电常数的低介电常数有机硅薄膜，但是该低介电常数薄膜中的一些展示出较少的所需机械性能，诸如较差的机械强度，其反映出在随后的半导体处理步骤期间薄膜易于受到损伤。可损伤低介电常数薄膜的半导体处理步骤包括等离子体基的工艺，诸如在阻挡层或籽晶层沉积于低介电常数薄膜上之前通常在构图的低介电常数薄膜之上执行的等离子体清洗步骤。用于从介电薄膜去除光刻胶或底部抗反射涂层(BARC)的灰化工艺或湿刻工艺也可能损伤薄膜。
因而，仍然需要一种用于制备具有改进的机械性能并抵抗下游等离子体或湿刻工艺化学腐蚀的低介电常数薄膜的工艺。
发明内容
本发明主要提供一种用于沉积低介电常数薄膜的方法。在一个实施方式中，该方法包括：以第一流速将第一有机硅化合物引入腔室，其中所述第一有机硅化合物中每个Si原子具有一个或多个Si-C键的平均数；以第二流速将第二有机硅化合物引入所述腔室，其中所述第二有机硅化合物中每个Si原子具有Si-C键的平均数，该平均数大于在所述第一有机硅化合物中每个Si原子的Si-C键平均数，以及其中所述第二流速除以所述第一流速与第二流速的总和在大约5％和大约50％之间；以及在存在RF功率下，使所述第一有机硅化合物与所述第二有机硅化合物反应，以在所述腔室中的衬底上沉积低介电常数薄膜。氧化气体也可与第一有机硅化合物和第二有机硅化合物反应。利用具有几乎没有Si-C键的第一有机硅化合物沉积的低k介电薄膜，与利用具有更多Si-C键的第二有机硅化合物沉积的低k介电薄膜相比，通常具有更好的机械性能。然而，可控制第二有机硅前驱物的比例以改进对等离子体和湿刻工艺的化学抵抗性，并对机械性能的影响最小。
在另一实施方式中，该方法包括以第一流速将第一有机硅化合物引入腔室，其中所述第一有机硅化合物中每个Si原子具有一个或多个Si-C键的平均数；以第二流速将第二有机硅化合物引入所述腔室，其中所述第二有机硅化合物中每个Si原子具有平均数的Si-C键，该平均数大于在所述第一有机硅化合物中每个Si原子的Si-C键平均数，以及其中所述第二流速除以所述第一流速与第二流速的总和在大约5％和大约50％之间；将热不稳定化合物引入所述腔室中；以及在存在射频功率下，使所述第一有机硅化合物、所述第二有机硅化合物和所述热不稳定化合物反应，以在所述腔室中的衬底上沉积低介电常数薄膜。氧化气体也可与第一有机硅化合物、第二有机硅化合物和热不稳定化合物反应。
在又一实施方式中，该方法包括以第一流速将甲基二乙氧基硅烷引入腔室；以第二流速将三甲基硅烷引入所述腔室，其中所述第二流速除以所述第一流速与第二流速的总和在大约5％和大约50％之间；将α-松油烯引入所述腔室中；以及在存在射频功率下，使所述甲基二乙氧基硅烷、三甲基硅烷和α-松油烯反应，以在所述腔室中的衬底上沉积低介电常数薄膜。氧化气体也可与甲基二乙氧基硅烷、三甲基硅烷和α-松油烯反应。
附图说明
因此为了更详细地理解本发明的以上所述特征，将参照实施方式对以上简要所述的本发明进行更具体描述，其中部分实施方式在附图中示出。然而，应该注意，附图仅示出了本发明典型的实施方式，因此不能认为是对本发明范围的限定，因为本发明可以允许其他等同的有效实施方式。
图1示出了根据本发明的实施方式由具有不同比率的两种有机硅化合物前驱物的前驱物混合物所沉积的低介电常数薄膜的薄膜组成比率(CHx/SiO，SiCH3/SiO，Si-H/SiO)的图表；
图2示出了根据本发明的实施方式由具有不同比率的两种有机硅化合物前驱物的前驱物混合物所沉积的低介电常数薄膜的介电常数和收缩率的图表；
图3示出了根据本发明的实施方式由具有不同比率的两种有机硅化合物前驱物的前驱物混合物所沉积的低介电常数薄膜的应力和模数的图表。
具体实施方式
本发明提供一种通过使腔室中的第一有机硅化合物与第二有机硅化合物在足以沉积低介电常数薄膜的条件下反应而沉积包含硅、氧和碳的低介电常数薄膜的方法。低介电常数薄膜通常具有大约3.0或更低的介电常数，优选地为大约2.5或更低。薄膜可使用等离子体增强化学气相沉积(PECVD)在能执行化学气相沉积(CVD)的腔室中沉积。等离子体可利用恒定射频(RF)功率、脉冲RF功率、高频RF功率、双频RF功率及其组合或其它等离子体产生技术而产生。
第一有机硅化合物中的每个Si原子具有一个或多个Si-C键的平均数目。在一个方案中，第一有机硅化合物包含至少一种Si-O键，例如，两个Si-O键，Si-C键以及Si-H键。包含至少一种Si-O键、Si-C键和Si-H键的有机硅化合物是期望的，原因在于发现在所沉积介电薄膜中的Si-O键增强与Si-H键的联接，而在所沉积介电薄膜中的Si-CH3键有利于低介电常数并增强薄膜对等离子体和湿刻损伤的抵抗。可用作第一有机硅化合物的化合物的实施例如下：甲基二乙氧基硅烷(mDEOS，CH3-SiH-(OCH2CH3)2)、1，3-二甲基二硅氧烷(CH3-SiH2-O-SiH2-CH3)、1，1，3，3-四甲基二硅氧烷(((CH3)2-SiH-O-SiH-(CH3)2)、双(1-甲基二硅氧烷基)甲烷((CH3-SiH2-O-SiH2-)2-CH2)，以及2，2-双(1-甲基二硅氧烷基)丙烷(CH3-SiH2-O-SiH2-)2-C(CH3)2。
第二有机硅化合物中每个Si原子具有Si-C键的平均数目，大于在第一有机硅化合物中每个Si原子的Si-C键的平均数目。例如，如果每个Si原子具有一个Si-C键的甲基二乙氧基硅烷用作第一有机硅化合物，则第二有机硅化合物中每个Si原子具有两个或多个Si-C键。例如，第二有机硅化合物可能是三甲基硅烷，其每个Si原子具有三个Si-C键。
可用作第二有机硅化合物的化合物实施例如下：二甲基甲硅烷((CH3)2-SiH2)，三甲基硅烷(TMS，(CH3)3-SiH)，四甲基硅烷((CH3)4-Si)，苯基硅烷诸如y为2-4的(C6H5)ySiH4-y，乙烯基硅烷诸如z为2-4的(CH2＝CH)ZSiH4-z，1，1，3，3-四甲基二硅氧烷((CH3)2-SiH-O-SiH-(CH3)2)，六甲基二硅氧烷((CH3)3-Si-O-Si-(CH3)3)，n为3或更大的(-O-Si-(CH3)2-)n循环诸如六甲基三硅氧烷、八甲基环四硅氧烷(OMCTS)，以及十甲基五硅氧烷，二甲基二乙氧基硅烷((CH3)2-Si-(OCH3)2)，甲基苯基二乙氧基硅烷((CH3)(C6H5)-Si-(OCH3)2)，及其部分氟化的碳派生物，诸如CF3-Si-(CH3)3。
可选地，第一有机硅化合物和第二有机硅化合物还与氧化气体反应。可使用的氧化气体包括氧气(O2)、臭氧(O3)、一氧化二氮(N2O)、一氧化碳(CO)、二氧化碳(CO2)、水(H2O)、2，3-丁二酮及其组合。当臭氧用作氧化气体时，臭氧发生器将按源气体中臭氧与氧气的比重从6％转化为20％，通常为大约为15％，残留物通常为氧气。然而，臭氧浓度可能基于所需要的臭氧量和所使用的臭氧产生设备的类型而增加或减小。氧气或含氧化合物的分解可能在进入沉积腔室之前在微波腔室中发生。优选地，射频(RF)功率施加到反应区以增加分解。
可选地，除了第一和第二有机硅化合物之外，将一种或多种载气引入到腔室中。可使用的载气的实施例包括氦、氩、氢气、乙烯及其组合。
在一个实施方式中，除了第一和第二有机硅化合物和可选的氧化气体与可选的载气之外，将一种或多种热不稳定化合物，例如，一种或多种碳氢化合物，引入到腔室中。如在此限定的，“碳氢化合物”包括碳氢化合物以及除了碳和氢之外还包括其它原子的碳氢基化合物。一种或多种碳氢化合物与第一和第二有机硅化合物以及可选的氧化气体反应以沉积低介电常数薄膜。碳氢化合物可包括热不稳定的物种或挥发性基团。热不稳定的物种或挥发性基团可以为环状基团。在此使用的术语“环状基团”意欲指环结构。环结构最少可包含3个原子。该原子可包含碳、氮、氧、氟及其组合，例如。环状基团可包括一个或多个单键、双键、三键及其组合。例如，环状基团可包括一个或多个芳族化合物、芳代物(aryls)、苯基、环己胺、环己二烯、环庚二烯及其组合。环状基团还可以为双环或三环。在一个实施方式中，环状基团与线性(linear)官能团或分叉的官能团键合。线性或分叉的官能团优选地包含烷基或乙烯基烷基基团并具有1到20之间的碳原子。线性或分叉的官能团还可包括氧原子，诸如在酮、醚和酯中的氧原子。可使用并具有至少一个环状基团的一些示例性的化合物包括α-松油烯(ATP)、二环庚二烯、乙烯基环己胺(VCH)和乙酸苯酯。
将第一有机硅化合物以大约50mgm与大约5000mgm之间的流速引入到腔室中。第二有机硅化合物以大约5sccm与大约1000sccm之间的流速引入到腔室中。选择第一有机硅化合物和第二有机硅化合物的流速，使得第二有机硅化合物的流速除以第一有机硅化合物流速与第二有机硅化合物流速的和在大约5％和大约50％之间。将在以下进一步讨论第一和第二有机硅化合物的相对流速。
一种或多种可选的氧化气体具有在大约50和大约5,000sccm之间的流速，诸如在大约100和大约1,000sccm之间，优选为大约200sccm。一种或多种可选的碳氢化合物被以大约100到大约5,000mgm之间的流速引入到腔室中，诸如在大约500与大约5,000mgm之间，优选地为大约3,000mgm。一种或多种可选的载气具有在大约500sccm和大约5,000sccm之间的流速。优选地，第一有机硅化合物为mDEOS，第二有机硅化合物为TMS，碳氢化合物为α-松油烯，以及氧化气体为氧气。
以上所述并贯穿直接申请的流速是相对于具有两个隔离处理区的300mm腔室进行设置，诸如从CA的Santa Clara的应用材料有限公司购得的
Figure A20068004454000101
腔室。因而，流经每个衬底处理区的流速为流入腔室的流速的一半。
在腔室中的衬底上沉积低介电常数薄膜期间，衬底通常保持在大约25℃与大约400℃之间的温度。从大约0.07W/cm2到大约2.8W/cm2范围内的功率密度，其为通常使用的用于300mm衬底的大约50W和大约2000W之间的RF功率级别。优选地，RF功率级别在大约100W和大约1500W之间。RF功率设置为在大约0.01MHz和300MHz之间的频率。RF功率可设置为混合频率，诸如大约13.56MHz的高频和大约350kHz的低频。RF功率可以是循环的或脉冲的以减少衬底的热量并促进所沉积薄膜中更大的孔隙度。RF功率还可以为连续或非连续的。
在沉积低介电常数薄膜之后，可后处理薄膜以从所沉积的薄膜去除热不稳定的物种或挥发性的基团，诸如有机基团。可使用的后处理包括电子束处理、紫外线处理、热处理(不存在电子束和/或紫外线处理时)及其组合。
可使用的示例性电子束条件包括在大约200℃到大约600℃之间的腔室温度，例如大约350℃至大约400℃之间的温度。电子束能量可以为从大约0.5keV到大约30keV。照射剂量可以在大约1μC/cm2和大约400μC/cm2之间。腔室压力可以在大约1毫托和大约100毫托之间。腔室中的周围气体可以为任意以下气体：氮气、氧气、氢气、氩、氢气和氮气的混合物、氨气、氙或这些气体的任意组合。电子束电流可以在大约0.15mA和大约50mA之间。电子束处理可以执行大约1分钟与大约15分钟之间的时间。尽管可使用任意电子束器件，但是可使用的示例性电子束腔室为可从CA的Santa Clara的应用材料有限公司购得的EBkTM电子束腔室。
可使用的示例性紫外线后处理条件包括在大约1托与大约10托之间的腔室压力和在大约350℃与大约500℃之间的衬底支架温度。紫外线辐射可通过任意紫外线源提供，诸如汞微波弧光灯、脉冲氙闪光灯或高效紫外线发光二极管阵列。例如紫外线辐射可具有在大约170nm与大约400nm之间的波长。在2005年5月9日提交的共同转让的美国专利申请序列号No.11/124,908中描述了可使用的紫外线腔室和处理条件的进一步细节，在此结合该专利作为参考。来自应用材料有限公司的NanoCureTM腔室是可用于紫外线后处理的可购得的腔室的实施例。
示例性的热后处理包括在大约200℃与大约500℃之间的衬底温度下退火腔室中的薄膜约2秒到约3个小时之间的时间长度，优选地为约0.5秒至约2小时。诸如氦、氢气、氮气及其组合的非反应气体可以大约100至大约10,000sccm之间的流速被引入到腔室中。腔室压力保持在大约1毫托和大约10毫托之间。优选的衬底间隔为约300密耳(mil)和约800密耳之间。在沉积低介电常数薄膜之后，在约200℃与约500℃之间的衬底温度下，优选地在约400℃与约420℃之间的衬底温度下退火低介电常数薄膜使薄膜中的至少部分有机基团挥发，在薄膜中形成纳米级的孔。
以下的实施例示出了本发明的实施方式。在实施例中的衬底为300mm衬底。低介电常数薄膜沉积于可从CA的Santa Clara的应用材料有限公司购得的
Figure A20068004454000111
腔室中的衬底上。随后使用电子束后处理低介电常数薄膜，但是可选地可在可从CA的Santa Clara的应用材料有限公司购得的EBkTM电子束腔室中在毫托范围内在很低的压力下在400℃热固化(cure)低介电常数薄膜1个小时，或者在腔室中在托范围内在低压力下在400℃热固化低介电常数薄膜2个小时。
实施例
低介电常数薄膜在约7.5托和约260℃的温度下沉积于衬底上。使用以下的处理气体和流速：
ATP，在2900mgm；
TMS，在62sccm；
mDEOS，在1044mgm(＝186sccm)；以及
氧气，在200sccm
因而，薄膜由具有25％TMS/mDEOS+TMS比率(62sccm TMS/186sccmmDEOS+62sccm TMS)的混合物沉积。衬底可距离气体分配喷头大约300密耳设置。将13.56MHz频率下600W的功率级别施加到喷头，用于等离子体增强薄膜的沉积。薄膜在后处理之前经SSM 5100Hg CV测量仪在0.1MHz下测量具有大约2.8的介电常数(k)。随后可利用电子束在以下条件下后处理衬底：V加速＝5KeV，1.5mA的电子束电流，100μC/cm2的电子束剂量。在衬底上的低介电常数薄膜在后处理之后具有以下的属性：约50Mpa的应力，0.78Gpa的硬度和5.4Gpa的模量。
将根据在图1-3中示出的结果提供根据本发明的实施方式所描述的低介电常数薄膜的进一步的特征。图1是示出在利用包含mDEOS作为第一有机硅化合物、TMS作为第二有机硅化合物、α-松油烯和氧气的气体混合物所沉积的低介电常数薄膜中包括CHx/SiO，Si-CH3/SiO，Si-H/SiO的不同键类型的相对量的图表。不同键类型的相对量通过后处理之后所沉积薄膜中键的FTIR峰面积进行评估。薄膜利用TMS流速/(TMS流速+mDEOS流速)的不同比率进行沉积。图1示出了在薄膜中Si-CH3键对SiO键的相对量随着TMS量相对于气体混合物中TMS和mDEOS总量增加而增多，虽然薄膜中Si-H键对SiO键的相对量随着TMS量相对于气体混合物中TMS和mDEOS总量增加而减少。随着TMS量相对于气体混合物中TMS和mDEOS总量增加，CHx键对SiO键的相对量也而增加。认为与由一种有机硅前驱物所沉积的薄膜相比，根据本发明的实施方式所沉积薄膜中的Si-CH3键增加量和Si-H键的减少量改善了薄膜对不期望水吸收的抵抗力。
图2示出了由包含mDEOS作为第一有机硅化合物、TMS作为第二有机硅化合物、α-松油烯和氧气的气体混合物所沉积的低介电常数薄膜的介电常数(k)和收缩率的图表。该薄膜利用TMS流速/(TMS流速+mDEOS流速)的不同比率进行沉积。图2示出根据本发明的实施方式获得具有2.56或更低介电常数的薄膜并且薄膜的介电常数随着TMS量相对于气体混合物中TMS和mDEOS总量增加而增多。然而，薄膜的收缩率随着TMS量相对于气体混合物中TMS和mDEOS总量增加而增加。通过选择在大约5％与大约50％之间的TMS流速/(TMS流速+mDEOS流速)，除了更好的化学抵抗性之外，可获得介电常数与机械属性的可接受组合。
图3示出了由包含mDEOS作为第一有机硅化合物、TMS作为第二有机硅化合物、α-松油烯和氧气的气体混合物所沉积的低介电常数薄膜的应力和模量的图表。该薄膜利用TMS流速/(TMS流速+mDEOS流速)的不同比率进行沉积。图3示出随着TMS量相对于气体混合物中TMS和mDEOS总量增加，薄膜的应力降低，这是令人满意的。然而，随着TMS量相对于气体混合物中TMS和mDEOS总量增加，薄膜的模量也降低。通过选择在大约5％与大约50％之间的TMS流速/(TMS流速+mDEOS流速)，可获得薄膜应力和模量的可接受组合。
认为利用两个有机硅前驱物所沉积的薄膜相对于利用一种有机硅前驱物所沉积的薄膜即，第二有机硅化合物流速除以第一有机硅化合物流速和第二有机硅化合物流速的和的比率为0的薄膜(参见图1)，的Si-CH3键的增加量增强了薄膜对等离子体损伤的抵抗性，诸如来自等离子体清洁步骤，增强了对来自用于去除光刻胶或BARC的灰化工艺的损伤，以及来自湿刻的损伤的抵抗性。通过使用第二有机硅化合物流速/第二有机硅化合物流速和第二有机硅化合物流速的总和等于在大约5％与50％之间以沉积低介电常数薄膜，可获得等离子体/湿刻损伤抵抗力、良好的机械性能和期望的介电常数的最佳组合。
虽然前述针对本发明的实施方式，但是在不脱离本发明的基本范围下，可设计出本发明的其它和进一步的实施方式，并且本发明的范围由以下的权利要求确定。

Claims (20)

1、一种用于沉积低介电常数薄膜的方法，包含：
以第一流速将第一有机硅化合物引入腔室，其中所述第一有机硅化合物中每个Si原子具有一个或多个Si-C键的平均数；
以第二流速将第二有机硅化合物引入所述腔室，其中所述第二有机硅化合物中每个Si原子具有Si-C键的平均数，该平均数大于在所述第一有机硅化合物中每个Si原子的Si-C键平均数，以及其中所述第二流速除以所述第一流速与第二流速的总和在大约5％和大约50％之间；以及
在存在射频功率下，使所述第一有机硅化合物与所述第二有机硅化合物反应，以在所述腔室中的衬底上沉积低介电常数薄膜。
2、根据权利要求1所述的方法，其特征在于，所述第一有机硅化合物包含Si-H键。
3、根据权利要求1所述的方法，其特征在于，所述第一有机硅化合物包含至少一种Si-O键、Si-C键和Si-H键。
4、根据权利要求3所述的方法，其特征在于，所述第一有机硅化合物包含两个Si-O键。
5、根据权利要求1所述的方法，其特征在于，所述第二有机硅化合物包含氧气。
6、根据权利要求1所述的方法，其特征在于，所述第二有机硅化合物选自由二甲基甲硅烷、三甲基硅烷、四甲基硅烷、y为2-4的(C6H5)ySiH4-y、z为2-4的(CH2＝CH)zSiH4-z、1，1，3，3-四甲基二硅氧烷、六甲基二硅氧烷、六甲基三硅氧烷、八甲基环四硅氧烷、十甲基五硅氧烷、二甲基二乙氧基硅烷、甲基苯基二乙氧基硅烷、CF3-Si-(CH3)3，及其部分氟化的碳派生物组成的组。
7、根据权利要求1所述的方法，其特征在于，进一步包含将氧化气体引入所述腔室。
8、根据权利要求1所述的方法，其特征在于，进一步包含利用紫外线、电子束、热后处理或其组合后处理所述低介电常数薄膜。
9、一种用于沉积低介电常数薄膜的方法，包含：
以第一流速将第一有机硅化合物引入腔室，其中所述第一有机硅化合物中每个Si原子具有一个或多个Si-C键的平均数；
以第二流速将第二有机硅化合物引入所述腔室，其中所述第二有机硅化合物中每个Si原子具有平均数的Si-C键，该平均数大于在所述第一有机硅化合物中每个Si原子的Si-C键平均数，以及其中所述第二流速除以所述第一流速与第二流速的总和在大约5％和大约50％之间；
将热不稳定化合物引入所述腔室中；以及
在存在射频功率下，使所述第一有机硅化合物、所述第二有机硅化合物和所述热不稳定化合物反应，以在所述腔室中的衬底上沉积低介电常数薄膜。
10、根据权利要求9所述的方法，其特征在于，进一步包含将氧化气体引入所述腔室。
11、根据权利要求9所述的方法，其特征在于，所述热不稳定化合物为碳氢化合物。
12、根据权利要求11所述的方法，其特征在于，所述碳氢化合物为环烃。
13、根据权利要求12所述的方法，其特征在于，所述环烃选自α-松油烯、二环庚二烯、乙烯基环已胺和乙酸苯酯组成的组。
14、根据权利要求9所述的方法，其特征在于，进一步包含利用紫外线、电子束、热后处理或其组合后处理所述低介电常数薄膜。
15、根据权利要求9所述的方法，其特征在于，所述第一有机硅化合物包含至少一种Si-O键、Si-C键和Si-H键。
16、根据权利要求15所述的方法，其特征在于，所述第一有机硅化合物包含两个Si-O键。
17、一种用于沉积低介电常数薄膜的方法，包含：
以第一流速将甲基二乙氧基硅烷引入腔室；
以第二流速将三甲基硅烷引入所述腔室，其中所述第二流速除以所述第一流速与第二流速的总和在大约5％和大约50％之间；
将α-松油烯引入所述腔室中；以及
在存在射频功率下，使所述甲基二乙氧基硅烷、三甲基硅烷和α-松油烯反应，以在所述腔室中的衬底上沉积低介电常数薄膜。
18、根据权利要求17所述的方法，其特征在于，进一步包含将氧化气体引入所述腔室。
19、根据权利要求18所述的方法，其特征在于，所述第二流速除以所述第一流速与第二流速的总和在大约10％和大约45％之间。
20、根据权利要求17所述的方法，其特征在于，进一步包含利用紫外线、电子束、热后处理或其组合后处理所述低介电常数薄膜。
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WO2007117320A2 (en) 2007-10-18
US20070134435A1 (en) 2007-06-14

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