JP2007532007A5 - - Google Patents
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- Publication number
- JP2007532007A5 JP2007532007A5 JP2007506831A JP2007506831A JP2007532007A5 JP 2007532007 A5 JP2007532007 A5 JP 2007532007A5 JP 2007506831 A JP2007506831 A JP 2007506831A JP 2007506831 A JP2007506831 A JP 2007506831A JP 2007532007 A5 JP2007532007 A5 JP 2007532007A5
- Authority
- JP
- Japan
- Prior art keywords
- growing
- telluride
- cadmium
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims 36
- 238000000034 method Methods 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 19
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims 14
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims 14
- 238000001451 molecular beam epitaxy Methods 0.000 claims 8
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 8
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical group C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims 5
- 239000002019 doping agent Substances 0.000 claims 4
- 238000004140 cleaning Methods 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 3
- 238000002161 passivation Methods 0.000 claims 3
- 229910004613 CdTe Inorganic materials 0.000 claims 2
- 229910004262 HgTe Inorganic materials 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910052793 cadmium Inorganic materials 0.000 claims 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 2
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000002243 precursor Substances 0.000 claims 2
- NYOZTOCADHXMEV-UHFFFAOYSA-N 2-propan-2-yltellanylpropane Chemical compound CC(C)[Te]C(C)C NYOZTOCADHXMEV-UHFFFAOYSA-N 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 claims 1
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 claims 1
- 230000004907 flux Effects 0.000 claims 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical group II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 229910052596 spinel Inorganic materials 0.000 claims 1
- 239000011029 spinel Substances 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0407804.4A GB0407804D0 (en) | 2004-04-06 | 2004-04-06 | Manufacture of cadmium mercury telluride |
| PCT/GB2005/001322 WO2005098097A1 (en) | 2004-04-06 | 2005-04-05 | Manufacture of cadmium mercury telluride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007532007A JP2007532007A (ja) | 2007-11-08 |
| JP2007532007A5 true JP2007532007A5 (https=) | 2008-05-15 |
Family
ID=32320443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007506831A Pending JP2007532007A (ja) | 2004-04-06 | 2005-04-05 | テルル化カドミウム水銀の製造 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8021914B2 (https=) |
| EP (1) | EP1740742A1 (https=) |
| JP (1) | JP2007532007A (https=) |
| KR (1) | KR101110592B1 (https=) |
| CN (1) | CN1965111B (https=) |
| CA (1) | CA2561648A1 (https=) |
| GB (1) | GB0407804D0 (https=) |
| IL (1) | IL178450A (https=) |
| TW (1) | TW200539320A (https=) |
| WO (1) | WO2005098097A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2649322C (en) * | 2008-09-30 | 2011-02-01 | 5N Plus Inc. | Cadmium telluride production process |
| US8912428B2 (en) * | 2008-10-22 | 2014-12-16 | Epir Technologies, Inc. | High efficiency multijunction II-VI photovoltaic solar cells |
| GB0918720D0 (en) | 2009-10-23 | 2009-12-09 | Qinetiq Ltd | Identification device |
| GB0921053D0 (en) | 2009-12-01 | 2010-01-13 | Selex Sensors & Airborne Sys | Infra red detectors and methods of manufacture |
| US9837563B2 (en) * | 2009-12-17 | 2017-12-05 | Epir Technologies, Inc. | MBE growth technique for group II-VI inverted multijunction solar cells |
| US8541256B2 (en) * | 2011-04-17 | 2013-09-24 | Chang-Feng Wan | Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays |
| US20130032810A1 (en) * | 2011-08-03 | 2013-02-07 | Bridgelux, Inc. | Led on silicon substrate using zinc-sulfide as buffer layer |
| FR2983351B1 (fr) * | 2011-11-28 | 2014-01-24 | Commissariat Energie Atomique | Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges |
| FR2997965B1 (fr) * | 2012-11-12 | 2019-11-22 | Electricite De France | Enceinte pour le traitement thermique d'un materiau reactif, notamment pour la realisation de depot de couches sur un substrat, et procede de traitement thermique dans une telle enceinte |
| CN103074677A (zh) * | 2013-01-17 | 2013-05-01 | 山东大学 | 一种碲化锌同质外延层的制备方法 |
| FR3021807B1 (fr) | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | Matrice de photodiodes mesa a ftm amelioree |
| DE112017004005B4 (de) | 2016-08-10 | 2024-07-18 | Sumco Corporation | Verfahren zur herstellung von siliziumepitaxialwafern |
| US11121302B2 (en) | 2018-10-11 | 2021-09-14 | SeeQC, Inc. | System and method for superconducting multi-chip module |
| US11519095B2 (en) * | 2019-04-22 | 2022-12-06 | Peng DU | MBE system with direct evaporation pump to cold panel |
| WO2021022558A1 (en) * | 2019-08-08 | 2021-02-11 | China Triumph International Engineering Co., Ltd. | A method to deposit thin film high quality absorber layer |
| CN120519960B (zh) * | 2025-07-25 | 2025-09-16 | 浙江拓感科技有限公司 | 基于图形化蓝宝石衬底的碲镉汞材料液相外延方法 |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3168017D1 (en) * | 1980-05-27 | 1985-02-14 | Secr Defence Brit | Manufacture of cadmium mercury telluride |
| GB8324531D0 (en) * | 1983-09-13 | 1983-10-12 | Secr Defence | Cadmium mercury telluride |
| GB8428032D0 (en) | 1984-11-06 | 1984-12-12 | Secr Defence | Growth of crystalline layers |
| US4804638A (en) * | 1986-12-18 | 1989-02-14 | Raytheon Company | Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity |
| GB2202236B (en) | 1987-03-09 | 1991-04-24 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride |
| US4970567A (en) | 1987-11-23 | 1990-11-13 | Santa Barbara Research Center | Method and apparatus for detecting infrared radiation |
| US4910154A (en) * | 1988-12-23 | 1990-03-20 | Ford Aerospace Corporation | Manufacture of monolithic infrared focal plane arrays |
| US4999694A (en) * | 1989-08-18 | 1991-03-12 | At&T Bell Laboratories | Photodiode |
| JPH03171634A (ja) | 1989-11-29 | 1991-07-25 | Furukawa Electric Co Ltd:The | Ｆｅｔ用電極形成層付エピタキシャルウェーハ |
| JPH04145669A (ja) * | 1990-10-05 | 1992-05-19 | Daido Steel Co Ltd | 積層型ＨｇＣｄＴｅ化合物半導体 |
| JPH04193793A (ja) | 1990-11-26 | 1992-07-13 | Mitsubishi Electric Corp | 赤外線検知基材の製造方法 |
| US5192695A (en) * | 1991-07-09 | 1993-03-09 | Fermionics Corporation | Method of making an infrared detector |
| JP3159788B2 (ja) | 1991-07-12 | 2001-04-23 | 富士通株式会社 | 化合物半導体の結晶成長方法 |
| JP2795002B2 (ja) * | 1991-09-19 | 1998-09-10 | 日本電気株式会社 | ＨｇＣｄＴｅ薄膜の製造方法 |
| JPH05226685A (ja) * | 1992-02-14 | 1993-09-03 | Fujitsu Ltd | 光検知素子の製造方法 |
| JPH05315580A (ja) | 1992-05-06 | 1993-11-26 | Fujitsu Ltd | 半導体光検知装置およびその製造方法 |
| JPH06177038A (ja) | 1992-12-09 | 1994-06-24 | Nec Corp | 分子線エピタキシー法による水銀カドミウムテルル薄膜の形成方法およびそれに用いる基板ホルダー |
| US5380669A (en) | 1993-02-08 | 1995-01-10 | Santa Barbara Research Center | Method of fabricating a two-color detector using LPE crystal growth |
| JPH06267998A (ja) | 1993-03-15 | 1994-09-22 | Fujitsu Ltd | エピタキシャル結晶を備えた半導体基板 |
| US5306386A (en) | 1993-04-06 | 1994-04-26 | Hughes Aircraft Company | Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
| JP2513126B2 (ja) | 1993-06-23 | 1996-07-03 | 日本電気株式会社 | ＭＢＥ法によるＳｉ基板上ＣｄＴｅ成長方法 |
| IL108589A (en) | 1994-02-08 | 1998-06-15 | Technion Res & Dev Foundation | SINGLE LAYER PLANAR Hg Cd Te PHOTOVOLTAIC INFRARED DETECTOR WITH HETEROSTRUCTURE PASSIVATION AND P-ON-N HOMOJUNCTION |
| JPH07240374A (ja) | 1994-02-28 | 1995-09-12 | Sumitomo Chem Co Ltd | ３−５族化合物半導体結晶 |
| JPH07335929A (ja) | 1994-06-03 | 1995-12-22 | Fujitsu Ltd | 半導体光検知装置 |
| JPH08107068A (ja) | 1994-10-03 | 1996-04-23 | Nec Corp | ＭＢＥ法によるＳｉ基板上ＣｄＴｅ成長方法 |
| JP2570646B2 (ja) * | 1994-12-13 | 1997-01-08 | 日本電気株式会社 | Ｓｉベ−ス半導体結晶基板及びその製造方法 |
| US5742089A (en) * | 1995-06-07 | 1998-04-21 | Hughes Electronics | Growth of low dislocation density HGCDTE detector structures |
| US6045614A (en) | 1996-03-14 | 2000-04-04 | Raytheon Company | Method for epitaxial growth of twin-free, (111)-oriented II-VI alloy films on silicon substrates |
| US5838053A (en) * | 1996-09-19 | 1998-11-17 | Raytheon Ti Systems, Inc. | Method of forming a cadmium telluride/silicon structure |
| JP3006534B2 (ja) * | 1997-03-31 | 2000-02-07 | 日本電気株式会社 | 半導体装置 |
| FR2763608B1 (fr) | 1997-05-21 | 1999-06-18 | Commissariat Energie Atomique | Nacelle d'epitaxie pour depot d'une couche de cdhgte par epitaxie en phase liquide sur un heterosubstrat et procede de depot de cdhgte sur un heterosubstrat utilisant cette nacelle |
| GB9921639D0 (en) * | 1999-09-15 | 1999-11-17 | Secr Defence Brit | New organotellurium compound and new method for synthesising organotellurium compounds |
| US20030102432A1 (en) * | 2001-04-12 | 2003-06-05 | Epir Ltd. | Monolithic infrared focal plane array detectors |
| US6657194B2 (en) | 2001-04-13 | 2003-12-02 | Epir Technologies, Inc. | Multispectral monolithic infrared focal plane array detectors |
| CN1171778C (zh) * | 2002-05-15 | 2004-10-20 | 西安交通大学 | 碲化镉粉末的制备方法 |
-
2004
- 2004-04-06 GB GBGB0407804.4A patent/GB0407804D0/en not_active Ceased
-
2005
- 2005-04-04 TW TW094110713A patent/TW200539320A/zh unknown
- 2005-04-05 WO PCT/GB2005/001322 patent/WO2005098097A1/en not_active Ceased
- 2005-04-05 CN CN2005800184292A patent/CN1965111B/zh not_active Expired - Fee Related
- 2005-04-05 KR KR1020067023261A patent/KR101110592B1/ko not_active Expired - Fee Related
- 2005-04-05 JP JP2007506831A patent/JP2007532007A/ja active Pending
- 2005-04-05 US US10/594,393 patent/US8021914B2/en not_active Expired - Fee Related
- 2005-04-05 CA CA002561648A patent/CA2561648A1/en not_active Abandoned
- 2005-04-05 EP EP05742545A patent/EP1740742A1/en not_active Withdrawn
-
2006
- 2006-10-04 IL IL178450A patent/IL178450A/en not_active IP Right Cessation
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