JP2007532007A - テルル化カドミウム水銀の製造 - Google Patents
テルル化カドミウム水銀の製造 Download PDFInfo
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- JP2007532007A JP2007532007A JP2007506831A JP2007506831A JP2007532007A JP 2007532007 A JP2007532007 A JP 2007532007A JP 2007506831 A JP2007506831 A JP 2007506831A JP 2007506831 A JP2007506831 A JP 2007506831A JP 2007532007 A JP2007532007 A JP 2007532007A
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- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims abstract description 47
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 239000000872 buffer Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 92
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 58
- 230000012010 growth Effects 0.000 claims abstract description 56
- 238000002161 passivation Methods 0.000 claims abstract description 22
- 238000012545 processing Methods 0.000 claims abstract description 19
- 238000000927 vapour-phase epitaxy Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 201
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical group C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 27
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 16
- 229910004613 CdTe Inorganic materials 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 14
- 229910052714 tellurium Inorganic materials 0.000 claims description 13
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052785 arsenic Inorganic materials 0.000 claims description 11
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 11
- 229910052793 cadmium Inorganic materials 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 7
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 6
- 229910004262 HgTe Inorganic materials 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- NYOZTOCADHXMEV-UHFFFAOYSA-N 2-propan-2-yltellanylpropane Chemical compound CC(C)[Te]C(C)C NYOZTOCADHXMEV-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 claims description 3
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical group II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 3
- 230000003628 erosive effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 32
- 230000008569 process Effects 0.000 description 23
- 239000007789 gas Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 8
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000004211 migration-enhanced epitaxy Methods 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- BTUGGGLMQBJCBN-UHFFFAOYSA-N 1-iodo-2-methylpropane Chemical compound CC(C)CI BTUGGGLMQBJCBN-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- ZCVHXPGOKMCZGZ-UHFFFAOYSA-N [amino(methyl)arsanyl]methane Chemical compound C[As](C)N ZCVHXPGOKMCZGZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229940065285 cadmium compound Drugs 0.000 description 1
- 150000001662 cadmium compounds Chemical class 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QSLGKGJRFUIAEG-UHFFFAOYSA-N n-[bis(dimethylamino)arsanyl]-n-methylmethanamine Chemical compound CN(C)[As](N(C)C)N(C)C QSLGKGJRFUIAEG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
Abstract
Description
Claims (37)
- xを0≦x≦1として、テルル化カドミウム水銀Hg1−xCdxTeを成長させる方法であって、
a)結晶基板を選ぶステップと、
b)分子ビームエピタキシによって前記基板上に少なくとも1つのバッファ層を成長させるステップと、
c)有機金属気相エピタキシによって前記少なくとも1つのバッファ層上にテルル化カドミウム水銀の少なくとも1つの層を成長させるステップとを含む方法。 - 基板が、テルル化カドミウム、テルル化亜鉛、テルル化カドミウム亜鉛、ヒ化ガリウム、シリコン、ゲルマニウム、アンチモン化インジウム、アンチモン化インジウムアルミニウム、アンチモン化インジウムガリウム、リン化インジウム、サファイア、セレン化カドミウム亜鉛、セレン化テルル化カドミウム亜鉛、アルミナ、または尖晶石からなる群から選択される、請求項1に記載の方法。
- 基板がシリコンである、請求項2に記載の方法。
- 結晶基板を選ぶステップが、<111>または<110>の方向において、形態{100}からミスアライメントされるように前記基板を構成することを含む、請求項1から3のいずれか一項に記載の方法。
- 基板のミスアライメントの程度が、1°と10°との間である、請求項4に記載の方法。
- 基板がシリコンであり、前記シリコン基板の配向が、[111]の方向に向かってミスアライメントされた(001)である、請求項1から5のいずれか一項に記載の方法。
- 分子ビームエピタキシによって少なくとも1つのバッファ層を成長させるステップが、テルル化亜鉛、テルル化カドミウム、およびテルル化カドミウム亜鉛から選択された1つまたは複数の層を成長させるステップを含む、請求項1から6のいずれか一項に記載の方法。
- 分子ビームデピタクシによって少なくとも1つのバッファ層を成長させるステップが、基板上にテルル化亜鉛の層を成長させ、かつ前記テルル化亜鉛の層上にテルル化カドミウムの層を成長させるステップを含む、請求項1から7のいずれか一項に記載の方法。
- テルル化カドミウム水銀の少なくとも1つの層を成長させるステップの前に、分子ビームエピタキシによって成長された最上バッファ層の表面を清浄するステップをさらに含む、請求項1から8のいずれか一項に記載の方法。
- 分子ビームエピタキシによって少なくとも1つのバッファ層を成長させた後、有機金属気相エピタキシによって少なくとも1つのバッファ層を成長させるステップをさらに含む、請求項1から9のいずれか一項に記載の方法。
- 有機金属気相エピタキシステップによって成長された少なくとも1つのバッファ層が、分子ビームエピタキシによって成長されたバッファ層と同じである、請求項10に記載の方法。
- 分子ビームエピタキシによって少なくとも1つのバッファ層を成長させるステップが、基板上のベース層のテルル化亜鉛上にテルル化カドミウムの上部層を成長させることを含み、少なくとも1つの他のバッファ層を成長させるステップが、有機金属気相エピタキシによって他のテルル化カドミウムの層を成長させることを含む、請求項11に記載の方法。
- 少なくとも1つのテルル化カドミウム水銀の層を成長させるステップが、テルル化カドミウム水銀(CMT)の単一層を与えるために、成長中に相互拡散するCdTeおよびHgTeの薄層を連続的に成長させることを含み、CdTeおよびHgTeの層の相対的な厚さが、カドミウムの含有量xを決定する、請求項1から12のいずれか一項に記載の方法。
- 有機金属気相エピタキシ(MOVPE)によって少なくとも1つのテルル化カドミウム水銀を成長させるステップにおいて、ジイソプロピルテルライドが、テルルの先駆物質であり、ジメチルカドミウムが、カドミウムの先駆物質である、請求項1から13のいずれか一項に記載の方法。
- 少なくとも1つのテルル化カドミウム水銀の層を成長させるステップが、テルル化カドミウム水銀の層の少なくとも1つにドーパントをドーピングすることを含む、請求項1から14のいずれか一項に記載の方法。
- ドーパントが、ヨウ素、ヒ素、インジウム、リン、およびアンチモンから選択される、請求項15に記載の方法。
- 少なくとも1つのテルル化カドミウム水銀の層を成長させるステップが、テルル化カドミウム水銀の複数の層を成長させるステップを含み、テルル化カドミウム水銀の層の少なくともいくつかが、異なる厚さ、組成、ドーパント、および/またはドーパント濃度を有する、請求項1から16のいずれか一項に記載の方法。
- デバイス処理ステップをさらに含む、請求項1から17のいずれか一項に記載の方法。
- デバイス処理ステップ後、デバイスを少なくとも1つのパッシベーション層でコーティングするステップを含む、請求項18に記載の方法。
- 少なくとも1つのパッシベーション層が、テルル化カドミウムを含む、請求項19に記載の方法。
- デバイスをパッシベーション層でコーティングするステップが、有機金属気相エピタキシによって成長された少なくとも1つのエピタキシャル層を成長させることを含む、請求項19または20に記載の方法。
- デバイス処理ステップ後、有機金属気相エピタキシによってテルル化カドミウム水銀の他のエピタキシャル層を成長させるステップを含む、請求項18に記載の方法。
- 有機金属気相エピタキシによってテルル化カドミウム水銀の少なくとも1つの層を成長させるのに適切なバッファ基板を作製する方法であって、結晶基板を選ぶステップと、分子ビームエピタキシによって少なくとも1つのバッファ層を成長させるステップとを含む、方法。
- 基板が、<111>または<110>に向かって{100}の形態からミスアライメントされる、請求項23に記載の方法。
- 基板がシリコンである、請求項23または請求項24に記載の方法。
- シリコン基板の配向が、[111]に対して1°から10°にミスアライメントされた(001)である、請求項25に記載の方法。
- 分子ビームエピタキシによって少なくとも1つのバッファ層を成長させる前に、基板を清浄する/処置するステップをさらに含む、請求項1から22のいずれか一項、または請求項23から26のいずれか一項に記載の方法。
- 基板を清浄する/処置するステップが、ヒ素フラックスの下で基板を加熱するステップを含む、請求項27に記載の方法。
- 分子ビームエピタキシによって結晶基板上に成長された1つまたは複数のバッファ層を備えるバッファ基板を選ぶステップと、有機金属気相エピタキシによってテルル化カドミウム水銀の少なくとも1つの層を成長させるステップとを含む、テルル化カドミウム水銀を製作する方法。
- バッファ基板が、請求項23から28のいずれか一項に記載の方法によって作製されたバッファ基板である、請求項29に記載の方法。
- 基板、基板上の少なくとも1つのバッファ層、および少なくとも1つのバッファ層上のテルル化カドミウム水銀の少なくとも1つの層を備える赤外線デバイスであって、基板の配向が、<110>または<111>に対して、1°と10°を含めて、1°から10°だけミスアライメントされた{100}である赤外線デバイス。
- 前記基板がシリコンであり、[111]に対して、1°と10°を含めて、1°から10°だけミスアライメントされた配向(001)を有する、請求項31に記載の赤外線デバイス。
- 少なくとも1つのバッファ層が、テルル化亜鉛、テルル化カドミウム、およびテルル化カドミウム亜鉛から選択された1つまたは複数の層を含む、請求項31または請求項32に記載の赤外線デバイス。
- 基板、基板上に形成された少なくとも1つのバッファ層、および少なくとも1つのバッファ層上に形成されたテルル化カドミウム水銀の少なくとも1つの層を備える赤外線デバイスであって、テルル化カドミウム水銀の少なくとも1つの層が、長波赤外線波長放射において活性であるように調整され、基板がシリコンである、赤外線デバイス。
- デバイスが検出器である、請求項31から34のいずれか一項に記載の赤外線デバイス。
- デバイスが赤外線源である、請求項31から34のいずれか一項に記載の赤外線デバイス。
- 0≦x≦1として、Hg1−xCdxTeの少なくとも1つの結晶層を成長させる方法であって、テルル化カドミウム水銀の少なくとも1つの層において形成された少なくとも1つのメサデバイスを有する基板を選び、かつ有機金属気相エピタキシによってHg1−xCdxTeの前記少なくとも1つの層を成長させるステップを含む方法。
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GBGB0407804.4A GB0407804D0 (en) | 2004-04-06 | 2004-04-06 | Manufacture of cadmium mercury telluride |
PCT/GB2005/001322 WO2005098097A1 (en) | 2004-04-06 | 2005-04-05 | Manufacture of cadmium mercury telluride |
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US8541256B2 (en) * | 2011-04-17 | 2013-09-24 | Chang-Feng Wan | Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays |
US20130032810A1 (en) * | 2011-08-03 | 2013-02-07 | Bridgelux, Inc. | Led on silicon substrate using zinc-sulfide as buffer layer |
FR2983351B1 (fr) * | 2011-11-28 | 2014-01-24 | Commissariat Energie Atomique | Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges |
FR2997965B1 (fr) * | 2012-11-12 | 2019-11-22 | Electricite De France | Enceinte pour le traitement thermique d'un materiau reactif, notamment pour la realisation de depot de couches sur un substrat, et procede de traitement thermique dans une telle enceinte |
CN103074677A (zh) * | 2013-01-17 | 2013-05-01 | 山东大学 | 一种碲化锌同质外延层的制备方法 |
FR3021807B1 (fr) | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | Matrice de photodiodes mesa a ftm amelioree |
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JPWO2018030352A1 (ja) * | 2016-08-10 | 2019-06-13 | 株式会社Sumco | エピタキシャルシリコンウェーハ、および、エピタキシャルシリコンウェーハの製造方法 |
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CA2561648A1 (en) | 2005-10-20 |
WO2005098097A1 (en) | 2005-10-20 |
CN1965111B (zh) | 2011-10-19 |
EP1740742A1 (en) | 2007-01-10 |
IL178450A (en) | 2012-05-31 |
CN1965111A (zh) | 2007-05-16 |
US20070197022A1 (en) | 2007-08-23 |
US8021914B2 (en) | 2011-09-20 |
TW200539320A (en) | 2005-12-01 |
KR101110592B1 (ko) | 2012-02-17 |
HK1102198A1 (en) | 2007-11-09 |
KR20070011449A (ko) | 2007-01-24 |
GB0407804D0 (en) | 2004-05-12 |
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