CN1965111B - 碲化汞镉的制造 - Google Patents
碲化汞镉的制造 Download PDFInfo
- Publication number
- CN1965111B CN1965111B CN2005800184292A CN200580018429A CN1965111B CN 1965111 B CN1965111 B CN 1965111B CN 2005800184292 A CN2005800184292 A CN 2005800184292A CN 200580018429 A CN200580018429 A CN 200580018429A CN 1965111 B CN1965111 B CN 1965111B
- Authority
- CN
- China
- Prior art keywords
- layer
- growth
- cadmium
- telluride
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims abstract description 44
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 74
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 73
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 51
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 238000012545 processing Methods 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 27
- 239000011701 zinc Substances 0.000 claims description 24
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 23
- 229910052725 zinc Inorganic materials 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 claims description 20
- 229910004613 CdTe Inorganic materials 0.000 claims description 17
- 229910052714 tellurium Inorganic materials 0.000 claims description 17
- 239000002243 precursor Substances 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052793 cadmium Inorganic materials 0.000 claims description 12
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052785 arsenic Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 9
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 230000004907 flux Effects 0.000 claims description 6
- 229910004262 HgTe Inorganic materials 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- -1 -isopropyl tellurium Chemical compound 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical group II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 2
- 239000000126 substance Substances 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 36
- 238000005516 engineering process Methods 0.000 description 22
- 239000013078 crystal Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 8
- 229910052753 mercury Inorganic materials 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000003491 array Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910007709 ZnTe Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- NWJUKFMMXJODIL-UHFFFAOYSA-N zinc cadmium(2+) selenium(2-) Chemical compound [Zn+2].[Se-2].[Se-2].[Cd+2] NWJUKFMMXJODIL-UHFFFAOYSA-N 0.000 description 3
- BTUGGGLMQBJCBN-UHFFFAOYSA-N 1-iodo-2-methylpropane Chemical compound CC(C)CI BTUGGGLMQBJCBN-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- IVYZFLBDJCMVRZ-UHFFFAOYSA-N aminoarsenic Chemical compound [As]N IVYZFLBDJCMVRZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- VDMAHPMCGTYFRP-UHFFFAOYSA-N dimethylaminoarsenic Chemical compound CN(C)[As] VDMAHPMCGTYFRP-UHFFFAOYSA-N 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical group 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0407804.4 | 2004-04-06 | ||
GBGB0407804.4A GB0407804D0 (en) | 2004-04-06 | 2004-04-06 | Manufacture of cadmium mercury telluride |
PCT/GB2005/001322 WO2005098097A1 (en) | 2004-04-06 | 2005-04-05 | Manufacture of cadmium mercury telluride |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1965111A CN1965111A (zh) | 2007-05-16 |
CN1965111B true CN1965111B (zh) | 2011-10-19 |
Family
ID=32320443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800184292A Expired - Fee Related CN1965111B (zh) | 2004-04-06 | 2005-04-05 | 碲化汞镉的制造 |
Country Status (11)
Country | Link |
---|---|
US (1) | US8021914B2 (zh) |
EP (1) | EP1740742A1 (zh) |
JP (1) | JP2007532007A (zh) |
KR (1) | KR101110592B1 (zh) |
CN (1) | CN1965111B (zh) |
CA (1) | CA2561648A1 (zh) |
GB (1) | GB0407804D0 (zh) |
HK (1) | HK1102198A1 (zh) |
IL (1) | IL178450A (zh) |
TW (1) | TW200539320A (zh) |
WO (1) | WO2005098097A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2649322C (en) | 2008-09-30 | 2011-02-01 | 5N Plus Inc. | Cadmium telluride production process |
US8912428B2 (en) * | 2008-10-22 | 2014-12-16 | Epir Technologies, Inc. | High efficiency multijunction II-VI photovoltaic solar cells |
GB0918720D0 (en) | 2009-10-23 | 2009-12-09 | Qinetiq Ltd | Identification device |
GB0921053D0 (en) | 2009-12-01 | 2010-01-13 | Selex Sensors & Airborne Sys | Infra red detectors and methods of manufacture |
US9837563B2 (en) * | 2009-12-17 | 2017-12-05 | Epir Technologies, Inc. | MBE growth technique for group II-VI inverted multijunction solar cells |
US8541256B2 (en) * | 2011-04-17 | 2013-09-24 | Chang-Feng Wan | Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays |
US20130032810A1 (en) * | 2011-08-03 | 2013-02-07 | Bridgelux, Inc. | Led on silicon substrate using zinc-sulfide as buffer layer |
FR2983351B1 (fr) * | 2011-11-28 | 2014-01-24 | Commissariat Energie Atomique | Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges |
FR2997965B1 (fr) * | 2012-11-12 | 2019-11-22 | Electricite De France | Enceinte pour le traitement thermique d'un materiau reactif, notamment pour la realisation de depot de couches sur un substrat, et procede de traitement thermique dans une telle enceinte |
CN103074677A (zh) * | 2013-01-17 | 2013-05-01 | 山东大学 | 一种碲化锌同质外延层的制备方法 |
FR3021807B1 (fr) | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | Matrice de photodiodes mesa a ftm amelioree |
WO2018030352A1 (ja) | 2016-08-10 | 2018-02-15 | 株式会社Sumco | エピタキシャルシリコンウェーハ、および、エピタキシャルシリコンウェーハの製造方法 |
US11519095B2 (en) * | 2019-04-22 | 2022-12-06 | Peng DU | MBE system with direct evaporation pump to cold panel |
US11563138B2 (en) * | 2019-08-08 | 2023-01-24 | China Triumph International Engineering Co., Ltd. | Method to deposit thin film high quality absorber layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1380246A (zh) * | 2002-05-15 | 2002-11-20 | 西安交通大学 | 碲化镉粉末的制备方法 |
Family Cites Families (34)
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DE3168017D1 (en) * | 1980-05-27 | 1985-02-14 | Secr Defence Brit | Manufacture of cadmium mercury telluride |
GB8324531D0 (en) * | 1983-09-13 | 1983-10-12 | Secr Defence | Cadmium mercury telluride |
GB8428032D0 (en) | 1984-11-06 | 1984-12-12 | Secr Defence | Growth of crystalline layers |
US4804638A (en) * | 1986-12-18 | 1989-02-14 | Raytheon Company | Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity |
GB2202236B (en) | 1987-03-09 | 1991-04-24 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride |
US4970567A (en) | 1987-11-23 | 1990-11-13 | Santa Barbara Research Center | Method and apparatus for detecting infrared radiation |
US4910154A (en) * | 1988-12-23 | 1990-03-20 | Ford Aerospace Corporation | Manufacture of monolithic infrared focal plane arrays |
US4999694A (en) * | 1989-08-18 | 1991-03-12 | At&T Bell Laboratories | Photodiode |
JPH03171634A (ja) | 1989-11-29 | 1991-07-25 | Furukawa Electric Co Ltd:The | Fet用電極形成層付エピタキシャルウェーハ |
JPH04145669A (ja) * | 1990-10-05 | 1992-05-19 | Daido Steel Co Ltd | 積層型HgCdTe化合物半導体 |
JPH04193793A (ja) | 1990-11-26 | 1992-07-13 | Mitsubishi Electric Corp | 赤外線検知基材の製造方法 |
US5192695A (en) * | 1991-07-09 | 1993-03-09 | Fermionics Corporation | Method of making an infrared detector |
JP3159788B2 (ja) | 1991-07-12 | 2001-04-23 | 富士通株式会社 | 化合物半導体の結晶成長方法 |
JP2795002B2 (ja) * | 1991-09-19 | 1998-09-10 | 日本電気株式会社 | HgCdTe薄膜の製造方法 |
JPH05226685A (ja) * | 1992-02-14 | 1993-09-03 | Fujitsu Ltd | 光検知素子の製造方法 |
JPH05315580A (ja) | 1992-05-06 | 1993-11-26 | Fujitsu Ltd | 半導体光検知装置およびその製造方法 |
JPH06177038A (ja) | 1992-12-09 | 1994-06-24 | Nec Corp | 分子線エピタキシー法による水銀カドミウムテルル薄膜の形成方法およびそれに用いる基板ホルダー |
US5380669A (en) | 1993-02-08 | 1995-01-10 | Santa Barbara Research Center | Method of fabricating a two-color detector using LPE crystal growth |
JPH06267998A (ja) | 1993-03-15 | 1994-09-22 | Fujitsu Ltd | エピタキシャル結晶を備えた半導体基板 |
US5306386A (en) | 1993-04-06 | 1994-04-26 | Hughes Aircraft Company | Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
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- 2005-04-05 CA CA002561648A patent/CA2561648A1/en not_active Abandoned
- 2005-04-05 EP EP05742545A patent/EP1740742A1/en not_active Withdrawn
- 2005-04-05 KR KR1020067023261A patent/KR101110592B1/ko not_active IP Right Cessation
- 2005-04-05 CN CN2005800184292A patent/CN1965111B/zh not_active Expired - Fee Related
- 2005-04-05 WO PCT/GB2005/001322 patent/WO2005098097A1/en active Application Filing
- 2005-04-05 US US10/594,393 patent/US8021914B2/en not_active Expired - Fee Related
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CN1380246A (zh) * | 2002-05-15 | 2002-11-20 | 西安交通大学 | 碲化镉粉末的制备方法 |
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IL178450A0 (en) | 2007-02-11 |
CA2561648A1 (en) | 2005-10-20 |
WO2005098097A1 (en) | 2005-10-20 |
EP1740742A1 (en) | 2007-01-10 |
IL178450A (en) | 2012-05-31 |
JP2007532007A (ja) | 2007-11-08 |
CN1965111A (zh) | 2007-05-16 |
US20070197022A1 (en) | 2007-08-23 |
US8021914B2 (en) | 2011-09-20 |
TW200539320A (en) | 2005-12-01 |
KR101110592B1 (ko) | 2012-02-17 |
HK1102198A1 (en) | 2007-11-09 |
KR20070011449A (ko) | 2007-01-24 |
GB0407804D0 (en) | 2004-05-12 |
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