KR101110592B1 - 카드뮴 수은 텔루라이드의 제조방법 - Google Patents

카드뮴 수은 텔루라이드의 제조방법 Download PDF

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Publication number
KR101110592B1
KR101110592B1 KR1020067023261A KR20067023261A KR101110592B1 KR 101110592 B1 KR101110592 B1 KR 101110592B1 KR 1020067023261 A KR1020067023261 A KR 1020067023261A KR 20067023261 A KR20067023261 A KR 20067023261A KR 101110592 B1 KR101110592 B1 KR 101110592B1
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layer
growing
telluride
cadmium
cmt
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KR20070011449A (ko
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재닛 엘리자베스 헤일스
진 기스
존 윌리엄 케언스
앤드류 그레이엄
루이스 벅클
데이빗 존 할
닐 톰슨 고든
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키네티큐 리미티드
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
KR1020067023261A 2004-04-06 2005-04-05 카드뮴 수은 텔루라이드의 제조방법 Expired - Fee Related KR101110592B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0407804.4A GB0407804D0 (en) 2004-04-06 2004-04-06 Manufacture of cadmium mercury telluride
GB0407804.4 2004-04-06
PCT/GB2005/001322 WO2005098097A1 (en) 2004-04-06 2005-04-05 Manufacture of cadmium mercury telluride

Publications (2)

Publication Number Publication Date
KR20070011449A KR20070011449A (ko) 2007-01-24
KR101110592B1 true KR101110592B1 (ko) 2012-02-17

Family

ID=32320443

Family Applications (1)

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KR1020067023261A Expired - Fee Related KR101110592B1 (ko) 2004-04-06 2005-04-05 카드뮴 수은 텔루라이드의 제조방법

Country Status (10)

Country Link
US (1) US8021914B2 (https=)
EP (1) EP1740742A1 (https=)
JP (1) JP2007532007A (https=)
KR (1) KR101110592B1 (https=)
CN (1) CN1965111B (https=)
CA (1) CA2561648A1 (https=)
GB (1) GB0407804D0 (https=)
IL (1) IL178450A (https=)
TW (1) TW200539320A (https=)
WO (1) WO2005098097A1 (https=)

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CA2649322C (en) * 2008-09-30 2011-02-01 5N Plus Inc. Cadmium telluride production process
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
GB0918720D0 (en) 2009-10-23 2009-12-09 Qinetiq Ltd Identification device
GB0921053D0 (en) 2009-12-01 2010-01-13 Selex Sensors & Airborne Sys Infra red detectors and methods of manufacture
US9837563B2 (en) * 2009-12-17 2017-12-05 Epir Technologies, Inc. MBE growth technique for group II-VI inverted multijunction solar cells
US8541256B2 (en) * 2011-04-17 2013-09-24 Chang-Feng Wan Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays
US20130032810A1 (en) * 2011-08-03 2013-02-07 Bridgelux, Inc. Led on silicon substrate using zinc-sulfide as buffer layer
FR2983351B1 (fr) * 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR2997965B1 (fr) * 2012-11-12 2019-11-22 Electricite De France Enceinte pour le traitement thermique d'un materiau reactif, notamment pour la realisation de depot de couches sur un substrat, et procede de traitement thermique dans une telle enceinte
CN103074677A (zh) * 2013-01-17 2013-05-01 山东大学 一种碲化锌同质外延层的制备方法
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
DE112017004005B4 (de) 2016-08-10 2024-07-18 Sumco Corporation Verfahren zur herstellung von siliziumepitaxialwafern
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
US11519095B2 (en) * 2019-04-22 2022-12-06 Peng DU MBE system with direct evaporation pump to cold panel
WO2021022558A1 (en) * 2019-08-08 2021-02-11 China Triumph International Engineering Co., Ltd. A method to deposit thin film high quality absorber layer
CN120519960B (zh) * 2025-07-25 2025-09-16 浙江拓感科技有限公司 基于图形化蓝宝石衬底的碲镉汞材料液相外延方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
EP0135344A1 (en) * 1983-09-13 1985-03-27 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Manufacture of cadmium mercury telluride
JPH05315580A (ja) * 1992-05-06 1993-11-26 Fujitsu Ltd 半導体光検知装置およびその製造方法

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DE3168017D1 (en) * 1980-05-27 1985-02-14 Secr Defence Brit Manufacture of cadmium mercury telluride
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US4804638A (en) * 1986-12-18 1989-02-14 Raytheon Company Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity
GB2202236B (en) 1987-03-09 1991-04-24 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride
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Publication number Publication date
KR20070011449A (ko) 2007-01-24
US20070197022A1 (en) 2007-08-23
CA2561648A1 (en) 2005-10-20
JP2007532007A (ja) 2007-11-08
IL178450A (en) 2012-05-31
WO2005098097A1 (en) 2005-10-20
TW200539320A (en) 2005-12-01
EP1740742A1 (en) 2007-01-10
US8021914B2 (en) 2011-09-20
HK1102198A1 (en) 2007-11-09
CN1965111A (zh) 2007-05-16
GB0407804D0 (en) 2004-05-12
CN1965111B (zh) 2011-10-19
IL178450A0 (en) 2007-02-11

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