GB0407804D0 - Manufacture of cadmium mercury telluride - Google Patents

Manufacture of cadmium mercury telluride

Info

Publication number
GB0407804D0
GB0407804D0 GBGB0407804.4A GB0407804A GB0407804D0 GB 0407804 D0 GB0407804 D0 GB 0407804D0 GB 0407804 A GB0407804 A GB 0407804A GB 0407804 D0 GB0407804 D0 GB 0407804D0
Authority
GB
United Kingdom
Prior art keywords
manufacture
cadmium mercury
mercury telluride
telluride
cadmium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0407804.4A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Priority to GBGB0407804.4A priority Critical patent/GB0407804D0/en
Publication of GB0407804D0 publication Critical patent/GB0407804D0/en
Priority to TW094110713A priority patent/TW200539320A/zh
Priority to PCT/GB2005/001322 priority patent/WO2005098097A1/en
Priority to CA002561648A priority patent/CA2561648A1/en
Priority to EP05742545A priority patent/EP1740742A1/en
Priority to US10/594,393 priority patent/US8021914B2/en
Priority to KR1020067023261A priority patent/KR101110592B1/ko
Priority to HK07110194.6A priority patent/HK1102198B/xx
Priority to CN2005800184292A priority patent/CN1965111B/zh
Priority to JP2007506831A priority patent/JP2007532007A/ja
Priority to IL178450A priority patent/IL178450A/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
GBGB0407804.4A 2004-04-06 2004-04-06 Manufacture of cadmium mercury telluride Ceased GB0407804D0 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
GBGB0407804.4A GB0407804D0 (en) 2004-04-06 2004-04-06 Manufacture of cadmium mercury telluride
TW094110713A TW200539320A (en) 2004-04-06 2005-04-04 Manufacture of cadmium mercury telluride
JP2007506831A JP2007532007A (ja) 2004-04-06 2005-04-05 テルル化カドミウム水銀の製造
EP05742545A EP1740742A1 (en) 2004-04-06 2005-04-05 Manufacture of cadmium mercury telluride
CA002561648A CA2561648A1 (en) 2004-04-06 2005-04-05 Manufacture of cadmium mercury telluride
PCT/GB2005/001322 WO2005098097A1 (en) 2004-04-06 2005-04-05 Manufacture of cadmium mercury telluride
US10/594,393 US8021914B2 (en) 2004-04-06 2005-04-05 Manufacture of cadmium mercury telluride
KR1020067023261A KR101110592B1 (ko) 2004-04-06 2005-04-05 카드뮴 수은 텔루라이드의 제조방법
HK07110194.6A HK1102198B (en) 2004-04-06 2005-04-05 Manufacture of cadmium mercury telluride
CN2005800184292A CN1965111B (zh) 2004-04-06 2005-04-05 碲化汞镉的制造
IL178450A IL178450A (en) 2004-04-06 2006-10-04 Manufacture of cadmium mercury telluride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0407804.4A GB0407804D0 (en) 2004-04-06 2004-04-06 Manufacture of cadmium mercury telluride

Publications (1)

Publication Number Publication Date
GB0407804D0 true GB0407804D0 (en) 2004-05-12

Family

ID=32320443

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0407804.4A Ceased GB0407804D0 (en) 2004-04-06 2004-04-06 Manufacture of cadmium mercury telluride

Country Status (10)

Country Link
US (1) US8021914B2 (https=)
EP (1) EP1740742A1 (https=)
JP (1) JP2007532007A (https=)
KR (1) KR101110592B1 (https=)
CN (1) CN1965111B (https=)
CA (1) CA2561648A1 (https=)
GB (1) GB0407804D0 (https=)
IL (1) IL178450A (https=)
TW (1) TW200539320A (https=)
WO (1) WO2005098097A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2649322C (en) * 2008-09-30 2011-02-01 5N Plus Inc. Cadmium telluride production process
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
GB0918720D0 (en) 2009-10-23 2009-12-09 Qinetiq Ltd Identification device
GB0921053D0 (en) 2009-12-01 2010-01-13 Selex Sensors & Airborne Sys Infra red detectors and methods of manufacture
US9837563B2 (en) * 2009-12-17 2017-12-05 Epir Technologies, Inc. MBE growth technique for group II-VI inverted multijunction solar cells
US8541256B2 (en) * 2011-04-17 2013-09-24 Chang-Feng Wan Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays
US20130032810A1 (en) * 2011-08-03 2013-02-07 Bridgelux, Inc. Led on silicon substrate using zinc-sulfide as buffer layer
FR2983351B1 (fr) * 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR2997965B1 (fr) * 2012-11-12 2019-11-22 Electricite De France Enceinte pour le traitement thermique d'un materiau reactif, notamment pour la realisation de depot de couches sur un substrat, et procede de traitement thermique dans une telle enceinte
CN103074677A (zh) * 2013-01-17 2013-05-01 山东大学 一种碲化锌同质外延层的制备方法
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
DE112017004005B4 (de) 2016-08-10 2024-07-18 Sumco Corporation Verfahren zur herstellung von siliziumepitaxialwafern
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
US11519095B2 (en) * 2019-04-22 2022-12-06 Peng DU MBE system with direct evaporation pump to cold panel
WO2021022558A1 (en) * 2019-08-08 2021-02-11 China Triumph International Engineering Co., Ltd. A method to deposit thin film high quality absorber layer
CN120519960B (zh) * 2025-07-25 2025-09-16 浙江拓感科技有限公司 基于图形化蓝宝石衬底的碲镉汞材料液相外延方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3168017D1 (en) * 1980-05-27 1985-02-14 Secr Defence Brit Manufacture of cadmium mercury telluride
GB8324531D0 (en) * 1983-09-13 1983-10-12 Secr Defence Cadmium mercury telluride
GB8428032D0 (en) 1984-11-06 1984-12-12 Secr Defence Growth of crystalline layers
US4804638A (en) * 1986-12-18 1989-02-14 Raytheon Company Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity
GB2202236B (en) 1987-03-09 1991-04-24 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride
US4970567A (en) 1987-11-23 1990-11-13 Santa Barbara Research Center Method and apparatus for detecting infrared radiation
US4910154A (en) * 1988-12-23 1990-03-20 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays
US4999694A (en) * 1989-08-18 1991-03-12 At&T Bell Laboratories Photodiode
JPH03171634A (ja) 1989-11-29 1991-07-25 Furukawa Electric Co Ltd:The Ｆｅｔ用電極形成層付エピタキシャルウェーハ
JPH04145669A (ja) * 1990-10-05 1992-05-19 Daido Steel Co Ltd 積層型ＨｇＣｄＴｅ化合物半導体
JPH04193793A (ja) 1990-11-26 1992-07-13 Mitsubishi Electric Corp 赤外線検知基材の製造方法
US5192695A (en) * 1991-07-09 1993-03-09 Fermionics Corporation Method of making an infrared detector
JP3159788B2 (ja) 1991-07-12 2001-04-23 富士通株式会社 化合物半導体の結晶成長方法
JP2795002B2 (ja) * 1991-09-19 1998-09-10 日本電気株式会社 ＨｇＣｄＴｅ薄膜の製造方法
JPH05226685A (ja) * 1992-02-14 1993-09-03 Fujitsu Ltd 光検知素子の製造方法
JPH05315580A (ja) 1992-05-06 1993-11-26 Fujitsu Ltd 半導体光検知装置およびその製造方法
JPH06177038A (ja) 1992-12-09 1994-06-24 Nec Corp 分子線エピタキシー法による水銀カドミウムテルル薄膜の形成方法およびそれに用いる基板ホルダー
US5380669A (en) 1993-02-08 1995-01-10 Santa Barbara Research Center Method of fabricating a two-color detector using LPE crystal growth
JPH06267998A (ja) 1993-03-15 1994-09-22 Fujitsu Ltd エピタキシャル結晶を備えた半導体基板
US5306386A (en) 1993-04-06 1994-04-26 Hughes Aircraft Company Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates
JP2513126B2 (ja) 1993-06-23 1996-07-03 日本電気株式会社 ＭＢＥ法によるＳｉ基板上ＣｄＴｅ成長方法
IL108589A (en) 1994-02-08 1998-06-15 Technion Res & Dev Foundation SINGLE LAYER PLANAR Hg Cd Te PHOTOVOLTAIC INFRARED DETECTOR WITH HETEROSTRUCTURE PASSIVATION AND P-ON-N HOMOJUNCTION
JPH07240374A (ja) 1994-02-28 1995-09-12 Sumitomo Chem Co Ltd ３−５族化合物半導体結晶
JPH07335929A (ja) 1994-06-03 1995-12-22 Fujitsu Ltd 半導体光検知装置
JPH08107068A (ja) 1994-10-03 1996-04-23 Nec Corp ＭＢＥ法によるＳｉ基板上ＣｄＴｅ成長方法
JP2570646B2 (ja) * 1994-12-13 1997-01-08 日本電気株式会社 Ｓｉベ−ス半導体結晶基板及びその製造方法
US5742089A (en) * 1995-06-07 1998-04-21 Hughes Electronics Growth of low dislocation density HGCDTE detector structures
US6045614A (en) 1996-03-14 2000-04-04 Raytheon Company Method for epitaxial growth of twin-free, (111)-oriented II-VI alloy films on silicon substrates
US5838053A (en) * 1996-09-19 1998-11-17 Raytheon Ti Systems, Inc. Method of forming a cadmium telluride/silicon structure
JP3006534B2 (ja) * 1997-03-31 2000-02-07 日本電気株式会社 半導体装置
FR2763608B1 (fr) 1997-05-21 1999-06-18 Commissariat Energie Atomique Nacelle d'epitaxie pour depot d'une couche de cdhgte par epitaxie en phase liquide sur un heterosubstrat et procede de depot de cdhgte sur un heterosubstrat utilisant cette nacelle
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Also Published As

Publication number Publication date
KR20070011449A (ko) 2007-01-24
US20070197022A1 (en) 2007-08-23
CA2561648A1 (en) 2005-10-20
JP2007532007A (ja) 2007-11-08
IL178450A (en) 2012-05-31
WO2005098097A1 (en) 2005-10-20
TW200539320A (en) 2005-12-01
EP1740742A1 (en) 2007-01-10
US8021914B2 (en) 2011-09-20
HK1102198A1 (en) 2007-11-09
KR101110592B1 (ko) 2012-02-17
CN1965111A (zh) 2007-05-16
CN1965111B (zh) 2011-10-19
IL178450A0 (en) 2007-02-11

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)