JP2007532007A - テルル化カドミウム水銀の製造 - Google Patents

テルル化カドミウム水銀の製造 Download PDF

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Publication number
JP2007532007A
JP2007532007A JP2007506831A JP2007506831A JP2007532007A JP 2007532007 A JP2007532007 A JP 2007532007A JP 2007506831 A JP2007506831 A JP 2007506831A JP 2007506831 A JP2007506831 A JP 2007506831A JP 2007532007 A JP2007532007 A JP 2007532007A
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Prior art keywords
layer
substrate
telluride
growing
cadmium
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Pending
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Japanese (ja)
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JP2007532007A5 (https=
Inventor
ヘイルズ，ジヤネツト・エリザベス
ギース，ジーン
ケアンズ，ジヨン・ウイリアム
グラハム，アンドリユウ
バツクル，ルイーズ
ホール，デイビツド・ジヨン
ゴードン，ネイル・トンプソン
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キネテイツク・リミテツド
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Publication of JP2007532007A publication Critical patent/JP2007532007A/ja
Publication of JP2007532007A5 publication Critical patent/JP2007532007A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
JP2007506831A 2004-04-06 2005-04-05 テルル化カドミウム水銀の製造 Pending JP2007532007A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0407804.4A GB0407804D0 (en) 2004-04-06 2004-04-06 Manufacture of cadmium mercury telluride
PCT/GB2005/001322 WO2005098097A1 (en) 2004-04-06 2005-04-05 Manufacture of cadmium mercury telluride

Publications (2)

Publication Number Publication Date
JP2007532007A true JP2007532007A (ja) 2007-11-08
JP2007532007A5 JP2007532007A5 (https=) 2008-05-15

Family

ID=32320443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007506831A Pending JP2007532007A (ja) 2004-04-06 2005-04-05 テルル化カドミウム水銀の製造

Country Status (10)

Country Link
US (1) US8021914B2 (https=)
EP (1) EP1740742A1 (https=)
JP (1) JP2007532007A (https=)
KR (1) KR101110592B1 (https=)
CN (1) CN1965111B (https=)
CA (1) CA2561648A1 (https=)
GB (1) GB0407804D0 (https=)
IL (1) IL178450A (https=)
TW (1) TW200539320A (https=)
WO (1) WO2005098097A1 (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR20190025709A (ko) * 2016-08-10 2019-03-11 가부시키가이샤 사무코 에피택셜 실리콘 웨이퍼 및, 에피택셜 실리콘 웨이퍼의 제조 방법

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CA2649322C (en) * 2008-09-30 2011-02-01 5N Plus Inc. Cadmium telluride production process
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
GB0918720D0 (en) 2009-10-23 2009-12-09 Qinetiq Ltd Identification device
GB0921053D0 (en) 2009-12-01 2010-01-13 Selex Sensors & Airborne Sys Infra red detectors and methods of manufacture
US9837563B2 (en) * 2009-12-17 2017-12-05 Epir Technologies, Inc. MBE growth technique for group II-VI inverted multijunction solar cells
US8541256B2 (en) * 2011-04-17 2013-09-24 Chang-Feng Wan Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays
US20130032810A1 (en) * 2011-08-03 2013-02-07 Bridgelux, Inc. Led on silicon substrate using zinc-sulfide as buffer layer
FR2983351B1 (fr) * 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR2997965B1 (fr) * 2012-11-12 2019-11-22 Electricite De France Enceinte pour le traitement thermique d'un materiau reactif, notamment pour la realisation de depot de couches sur un substrat, et procede de traitement thermique dans une telle enceinte
CN103074677A (zh) * 2013-01-17 2013-05-01 山东大学 一种碲化锌同质外延层的制备方法
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
US11519095B2 (en) * 2019-04-22 2022-12-06 Peng DU MBE system with direct evaporation pump to cold panel
WO2021022558A1 (en) * 2019-08-08 2021-02-11 China Triumph International Engineering Co., Ltd. A method to deposit thin film high quality absorber layer
CN120519960B (zh) * 2025-07-25 2025-09-16 浙江拓感科技有限公司 基于图形化蓝宝石衬底的碲镉汞材料液相外延方法

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JPS5771190A (en) * 1980-05-27 1982-05-01 Secr Defence Brit Method of fabricating cadmium-mercury- tellurium
JPS6077431A (ja) * 1983-09-13 1985-05-02 イギリス国 カドミウム水銀テルル化物の製法
JPH0389564A (ja) * 1989-08-18 1991-04-15 American Teleph & Telegr Co <Att> フォトダイオード
JPH04145669A (ja) * 1990-10-05 1992-05-19 Daido Steel Co Ltd 積層型ＨｇＣｄＴｅ化合物半導体
JPH05226685A (ja) * 1992-02-14 1993-09-03 Fujitsu Ltd 光検知素子の製造方法
JPH05315580A (ja) * 1992-05-06 1993-11-26 Fujitsu Ltd 半導体光検知装置およびその製造方法
JPH07335929A (ja) * 1994-06-03 1995-12-22 Fujitsu Ltd 半導体光検知装置
JPH08167573A (ja) * 1994-12-13 1996-06-25 Nec Corp Ｓｉベ−ス半導体結晶基板及びその製造方法
JP2003509868A (ja) * 1999-09-15 2003-03-11 キネティック リミテッド テルル化カドミウム水銀、テルル化水銀およびテルル化カドミウムを含むデバイスおよび半導体層の、新規な製造方法

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JPS5771190A (en) * 1980-05-27 1982-05-01 Secr Defence Brit Method of fabricating cadmium-mercury- tellurium
JPS6077431A (ja) * 1983-09-13 1985-05-02 イギリス国 カドミウム水銀テルル化物の製法
JPH0389564A (ja) * 1989-08-18 1991-04-15 American Teleph & Telegr Co <Att> フォトダイオード
JPH04145669A (ja) * 1990-10-05 1992-05-19 Daido Steel Co Ltd 積層型ＨｇＣｄＴｅ化合物半導体
JPH05226685A (ja) * 1992-02-14 1993-09-03 Fujitsu Ltd 光検知素子の製造方法
JPH05315580A (ja) * 1992-05-06 1993-11-26 Fujitsu Ltd 半導体光検知装置およびその製造方法
JPH07335929A (ja) * 1994-06-03 1995-12-22 Fujitsu Ltd 半導体光検知装置
JPH08167573A (ja) * 1994-12-13 1996-06-25 Nec Corp Ｓｉベ−ス半導体結晶基板及びその製造方法
JP2003509868A (ja) * 1999-09-15 2003-03-11 キネティック リミテッド テルル化カドミウム水銀、テルル化水銀およびテルル化カドミウムを含むデバイスおよび半導体層の、新規な製造方法

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JPN5007005050; ＪＯＨＮＳＯＮ　Ｓ　Ｍ: '"Ｄｉｒｅｃｔ　Ｇｒｏｗｔｈ　ｏｆ　ＣｄＺｎＴｅ／Ｓｉ　Ｓｕｂｓｔｒａｔｅｓ　ｆｏｒ　Ｌａｒｇｅ-Ａｒｅａ　ＨｇＣｄＴｅ　Ｉｎｆｒａｒｅｄ　Ｆｏｃａｌ　Ｐｌａｎｅ　Ａｒｒａｙｓ"' ＪＯＵＲＮＡＬ　ＯＦ　ＥＬＥＣＴＲＯＮＩＣ　ＭＡＴＥＲＩＡＬＳ Ｖ２４　Ｎ５, 19950501, Ｐ４６７-４７３ *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190025709A (ko) * 2016-08-10 2019-03-11 가부시키가이샤 사무코 에피택셜 실리콘 웨이퍼 및, 에피택셜 실리콘 웨이퍼의 제조 방법
JPWO2018030352A1 (ja) * 2016-08-10 2019-06-13 株式会社Sumco エピタキシャルシリコンウェーハ、および、エピタキシャルシリコンウェーハの製造方法
KR102181277B1 (ko) * 2016-08-10 2020-11-20 가부시키가이샤 사무코 에피택셜 실리콘 웨이퍼의 제조 방법
US11462409B2 (en) 2016-08-10 2022-10-04 Sumco Corporation Epitaxial silicon wafer, and method for manufacturing epitaxial silicon wafer

Also Published As

Publication number Publication date
KR20070011449A (ko) 2007-01-24
US20070197022A1 (en) 2007-08-23
CA2561648A1 (en) 2005-10-20
IL178450A (en) 2012-05-31
WO2005098097A1 (en) 2005-10-20
TW200539320A (en) 2005-12-01
EP1740742A1 (en) 2007-01-10
US8021914B2 (en) 2011-09-20
HK1102198A1 (en) 2007-11-09
KR101110592B1 (ko) 2012-02-17
CN1965111A (zh) 2007-05-16
GB0407804D0 (en) 2004-05-12
CN1965111B (zh) 2011-10-19
IL178450A0 (en) 2007-02-11

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